| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/19/2005 | CN1566380A Refining process of high purity gallium for producing compound semiconductor |
| 01/19/2005 | CN1185686C Preparation method of semiconductor substrate |
| 01/19/2005 | CN1185660C Manufacturing method for oxide superconductor, material used for oxide superconductor and preparation method thereof |
| 01/19/2005 | CN1185373C Production method of hydroxy apatite crystal whisker |
| 01/18/2005 | US6844611 III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crystal |
| 01/18/2005 | US6844569 Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby |
| 01/18/2005 | US6844084 Spinel substrate and heteroepitaxial growth of III-V materials thereon |
| 01/18/2005 | US6844074 Quartz layer; vibrators, oscillators, high frequency filter surface acoustic wave elements, optical waveguides, semicon-ductors; atmospheric pressure vapor phase epitaxial deposited silicate on gallium nitride or zinc oxide buffered substrate |
| 01/18/2005 | US6843849 Method and apparatus for growing high quality single crystal |
| 01/18/2005 | US6843848 Semiconductor wafer made from silicon and method for producing the semiconductor wafer |
| 01/18/2005 | US6843847 Silicon single crystal wafer and production method thereof and soi wafer |
| 01/13/2005 | WO2005004213A1 Method for growing thin nitride film onto substrate and thin nitride film device |
| 01/13/2005 | WO2005004212A1 Growth method of nitride semiconductor epitaxial layers |
| 01/13/2005 | WO2005004197A2 Fluidic nanotubes and devices |
| 01/13/2005 | WO2005003414A1 Substrate for thin-film formation, thin-film substrate and light emitting element |
| 01/13/2005 | WO2005003413A1 Crucible and method of growing single crystal by using crucible |
| 01/13/2005 | WO2005002762A1 Method for producing magnetically active shape memory metal alloy |
| 01/13/2005 | US20050009304 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches |
| 01/13/2005 | US20050009221 Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method |
| 01/13/2005 | US20050006646 Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device |
| 01/13/2005 | CA2522222A1 Fluidic nanotubes and devices |
| 01/12/2005 | EP1495169A1 Dislocation reduction in non-polar gallium nitride thin films |
| 01/12/2005 | EP1495168A1 Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition |
| 01/12/2005 | EP1495167A1 NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
| 01/12/2005 | EP1097251A4 System and method for reducing particles in epitaxial reactors |
| 01/12/2005 | CN1564314A Method of preparing high quality zinc oxide based monocrystal thin film |
| 01/12/2005 | CN1563517A Method for preparing scintillating crystal of orthosilicate with bivalent cerium ions doped |
| 01/12/2005 | CN1563516A Two-steps method for growing niobium plumbum zincic acid-aluminium titanate of relaxation ferroelectric monocrystal |
| 01/12/2005 | CN1563515A Method for developing crystal of yttrium aluminate with cerium doped |
| 01/12/2005 | CN1563514A Method for preparing crystal of rare earth aluminate doped by tervalent cerium ion |
| 01/12/2005 | CN1563513A Method for preparing single crystal of solid solution of indium lead niobate and lead titanate |
| 01/12/2005 | CN1563512A Method for preparing protective layer of nitride on crystal whisker surface of aluminium borate |
| 01/12/2005 | CN1563511A Technique for developing crystal of bismuth boric acid through falling curcible method |
| 01/12/2005 | CN1563509A Technique for fabricating monocystal of rutile through flame fusion method under controllable atmosphere and equipment |
| 01/11/2005 | US6841274 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same |
| 01/11/2005 | US6841249 Method of a diamond surface and corresponding diamond surface |
| 01/11/2005 | US6841235 Metallic nanowire and method of making the same |
| 01/11/2005 | US6841013 Metallic nanowire and method of making the same |
| 01/11/2005 | US6841002 Method for forming carbon nanotubes with post-treatment step |
| 01/11/2005 | US6840998 Silicon single crystal produced by crucible-free float zone pulling |
| 01/11/2005 | US6840997 Vacancy, dominsated, defect-free silicon |
| 01/11/2005 | CA2307584C Charge for vertical boat growth process and use thereof |
| 01/06/2005 | WO2005001916A1 Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
| 01/06/2005 | WO2005001907A1 THE METHOD OF PREPARING COMPOSITE SUBSTRATE MATERIALS OF Ϝ-LiAlO2 /α-Al2O3 |
| 01/06/2005 | WO2005001171A1 Process for producing single crystal and single crystal |
| 01/06/2005 | WO2005001170A1 Process for producing single crystal and single crystal |
| 01/06/2005 | WO2005001169A1 Method for producing single crystal and single crystal |
| 01/06/2005 | WO2005001168A1 Method of synthesising a crystalline material and material thus obtained |
| 01/06/2005 | WO2004070653A3 Image analysis system and method |
| 01/06/2005 | US20050004293 Nanocrystals in ligand boxes exhibiting enhanced chemical, photochemical, and thermal stability, and methods of making the same |
| 01/06/2005 | US20050003089 Method of forming a carbon nano-material layer using a cyclic deposition technique |
| 01/06/2005 | US20050001245 Method for manufacturing gallium nitride group compound semiconductor |
| 01/06/2005 | US20050000938 Method of making diamond product and diamond product |
| 01/06/2005 | US20050000603 Nickel base superalloy and single crystal castings |
| 01/06/2005 | US20050000449 Susceptor for epitaxial growth and epitaxial growth method |
| 01/06/2005 | US20050000431 Method of modifying source chemicals in an ALD process |
| 01/06/2005 | US20050000410 Manufacturing method of high resistivity silicon single crystal |
| 01/06/2005 | US20050000409 High yield method for preparing silicon nanocrystal with chemically accessible surfaces |
| 01/06/2005 | US20050000408 Process for forming polycrystalline silicon layer by laser crystallization |
| 01/06/2005 | US20050000406 Device and method for producing single crystals by vapor deposition |
| 01/06/2005 | US20050000404 High purity silica crucible by electrolytic refining, and its production method and pulling method |
| 01/06/2005 | US20050000403 Process for producing single crystal of compound semiconductor and crystal growing apparatus |
| 01/05/2005 | CN1560333A Process for producing periodicity field reverse of Gd2 (MoO4)3 crystal |
| 01/05/2005 | CN1560332A Preparation process of yttricum aluminium garnet flare crystal mixed with three valence cerium ion |
| 01/05/2005 | CN1560331A Process of growing magnesium oxide crystal by magnesite |
| 01/05/2005 | CN1560330A Preparation process of zinc oxide bar shape single crystal nano-probe |
| 01/05/2005 | CN1560329A Growing process of thulium doped yttrium aluminate laser crystal |
| 01/05/2005 | CN1183032C Heterogeneous liquid-phase crystallisation of diamond |
| 01/04/2005 | US6838395 Method for fabricating a semiconductor crystal |
| 01/04/2005 | US6837935 Microwave plasma film-forming apparatus for forming diamond film |
| 12/30/2004 | US20040266181 Coated semiconductor wafer, and process and device for producing the semiconductor wafer |
| 12/30/2004 | US20040266057 Silicon carbide and method of manufacturing the same |
| 12/30/2004 | US20040262790 Method for producing sphere-based crystals |
| 12/30/2004 | US20040262636 Fluidic nanotubes and devices |
| 12/30/2004 | US20040261692 Substrate for epitaxy |
| 12/30/2004 | US20040261691 Crystallization apparatus and method |
| 12/30/2004 | US20040261690 Method of making optical fluoride crystal feedstock |
| 12/30/2004 | US20040261689 Low temperature epitaxial growth of quartenary wide bandgap semiconductors |
| 12/29/2004 | WO2004114422A1 P-n heterojunction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same |
| 12/29/2004 | WO2004114387A1 Method for producing semiconductor single crystal wafer and laser processing device used therefor |
| 12/29/2004 | WO2004113597A1 The technique of production of fancy red diamonds |
| 12/29/2004 | WO2004073024A3 Method and apparatus for making continuous films ofa single crystal material |
| 12/29/2004 | EP1490537A1 High pressure high temperature growth of crystalline group iii metal nitrides |
| 12/29/2004 | EP1490307A1 Spinel substrate and heteroepitaxial growth of iii-v materials thereon |
| 12/29/2004 | EP1042103B1 Method of bonding cast superalloys |
| 12/29/2004 | CN2666931Y Apparatus for growing metal organic compound vapour phase deposit of zinc oxide crystal film |
| 12/29/2004 | CN2666930Y Apparatus for growing long-size semi-insulation gallium arsenide single crystal |
| 12/29/2004 | CN1558002A Artificial hair crystal and preparation method thereof |
| 12/29/2004 | CN1182597C Controlled conversion of metal oxyfluorides into superconducting oxides |
| 12/29/2004 | CN1182280C Equipment for growing raw monocrystal |
| 12/29/2004 | CN1182279C Preparation of nano grade Sic/SiO2 by high silicon coal and whisker/fibre thereof |
| 12/29/2004 | CN1182039C Rod-like polycrystal GaN and its two-step preparation method |
| 12/29/2004 | CA2508733A1 Method for producing semiconductor single crystal wafer and laser processing device used therefor |
| 12/28/2004 | US6835966 Method for manufacturing gallium nitride compound semiconductor |
| 12/28/2004 | US6835365 Contacting macroscopically faceted single diamond crystals with a solvent/catalyst, heating and pressurizing; supersaturation driving force is generated by the difference in surface free energy |
| 12/23/2004 | WO2004112116A1 Method for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method |
| 12/23/2004 | WO2004112112A1 Iii nitride crystal and method for producing same |
| 12/23/2004 | WO2004111319A2 Sacrificial template method of fabricating a nanotube |
| 12/23/2004 | WO2004111318A1 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
| 12/23/2004 | WO2004111316A1 System for growing silicon carbide crystals |