Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
02/2005
02/08/2005US6852160 Epitaxial oxide films via nitride conversion
02/03/2005WO2005010965A2 METHOD AND STRUCTURE OF STRAIN CONTROL OF SiGe BASED PHOTODETECTORS AND MODULATORS
02/03/2005WO2005010949A2 Solution to thermal budget
02/03/2005WO2005010891A1 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high density memories, and method of making the same
02/03/2005WO2005010244A1 Silicon carbide product, method for producing same, and method for cleaning silicon carbide product
02/03/2005WO2005010243A1 Process for producing silicon single crystal substrate, method of measuring resistance characteristics and method of warranting resistance characteristics
02/03/2005WO2005010242A1 Process for producing single crystal and apparatus for single crystal production
02/03/2005WO2005010231A2 Cvd method for the deposition of at least one iii-vn layer on a substrate
02/03/2005WO2005010227A2 Chemical vapor deposition reactor
02/03/2005WO2005009900A2 Method for producing graphitic carbon nanocomposites in particular nanopearls in bulk or in an individual manner
02/03/2005US20050026398 Method of making group III nitride-based compound semiconductor
02/03/2005US20050025886 Annealing single crystal chemical vapor depositon diamonds
02/03/2005US20050023544 Heteroepitaxially growing on heterosubstrate; reliability, high yield; single crystals; flatness, smoothness
02/03/2005US20050022860 Thin-film photovoltaic module
02/03/2005US20050022726 Carbon nanotube-nanocrystal heterostructures and methods of making the same
02/03/2005US20050022723 Colloidal crystallization via applied fields
02/03/2005US20050022722 Method for pulling a single crystal
02/03/2005US20050022721 Acentric, rhombohedral lanthanide borate crystals, method for making, and applications thereof
02/03/2005US20050022720 Acentric orthorhombic lanthanide borate crystals, method for making, and applications thereof
02/03/2005DE10331513A1 Manufacture of highly purified metal fluoride, e.g. calcium fluoride for preparing optical items, involves heating a less pure metal fluoride and treating with fluorinating agent
02/03/2005DE102004034372A1 Production of a silicon single crystal used in the manufacture of semiconductor substrates comprises adjusting the electrical resistance to a first resistance by gas doping, and adjusting to a second resistance by neutron bombardment
02/03/2005CA2531492A1 Compositions for purifying and crystallizing molecules of interest
02/02/2005EP1502972A1 Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal
02/02/2005EP1502303A1 High voltage switching devices and process for forming same
02/02/2005CN1575534A Light emitting element structure using nitride bulk single crystal layer
02/02/2005CN1575533A 氮化物半导体激光元件及其制造方法 The nitride semiconductor laser device and its manufacturing method
02/02/2005CN1575357A Substrate for epitaxy
02/02/2005CN1574225A Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon
02/02/2005CN1572733A Method for the production of an internally vitrified sio2 crucible
02/02/2005CN1187483C Melt method for growing sosoloid monocrystal of lead niobium-zincate lead-titanate
02/02/2005CN1187482C Preparation of strontium barium niobate columnar single crystal grain by molten-salt growth method
02/01/2005US6849580 Method of producing biaxially textured buffer layers and related articles, devices and systems
02/01/2005US6849561 Method of forming low-k films
02/01/2005US6849121 Growth of uniform crystals
02/01/2005US6849119 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
01/2005
01/27/2005WO2005008304A1 Optical waveguide material and optical waveguide
01/27/2005WO2005007943A1 Method for producing crystal of fluoride
01/27/2005WO2005007941A1 An apparatus and method for recharge raw material
01/27/2005WO2005007940A1 Method of producing silicon wafer and silicon wafer
01/27/2005WO2005007939A1 InP SINGLE CRYSTAL, GaAs SINGLE CRYSTAL, AND METHOD FOR PRODUCTION THEREOF
01/27/2005WO2005007938A1 METHOD FOR GROWING Si BASED CRYSTAL, Si BASED CRYSTAL, Si BASED CRYSTAL SUBSTRATE AND SOLAR CELL
01/27/2005WO2005007937A2 Annealing single crystal chemical vapor deposition diamonds
01/27/2005WO2005007936A2 Ultrahard diamonds and method of making thereof
01/27/2005WO2005007935A2 Tough diamonds and method of making thereof
01/27/2005WO2005007934A2 Method for producing piezoelectric monocrystals having a polydomain structure for accurate positioning devices
01/27/2005WO2005007568A2 Gas storage medium and methods
01/27/2005WO2004071067A3 Data communication in a laboratory environment
01/27/2005WO2004053929A3 Semiconductor nanocrystal heterostructures
01/27/2005US20050020036 Method of fabricating a compound semiconductor layer
01/27/2005US20050020033 Doping-assisted defect control in compound semiconductors
01/27/2005US20050019794 Multilayered microfluidic apparatus for positioning protein crystal within an energy beam; high throughput assay; protein structure analysis
01/27/2005US20050019114 Polycrystalline diamond tool having a mass of sintered nanodiamond particles, the particles containing greater than 95% by volume nanodiamond and greater than 98% by volume carbon; use in superabrasive industry for production of cutting tools, drill bits, wire drawing dies
01/27/2005US20050016446 CaF2 lenses with reduced birefringence
01/27/2005US20050016443 Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperature
01/27/2005US20050016442 Biopolymer crystal mounting device and manufacturing method thereof
01/27/2005DE102004029515A1 Verfahren zur Herstellung eines optischen Fluoridkristall-Ausgangsmaterials A method for producing an optical fluoride crystal starting material
01/27/2005CA2532384A1 Annealing single crystal chemical vapor deposition diamonds
01/27/2005CA2532227A1 Tough diamonds and method of making thereof
01/26/2005EP1501118A1 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
01/26/2005EP1501117A1 Substrate for growing gallium nitride, method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
01/26/2005EP1500723A1 Biopolymer crystal mounting device and manufacturing method thereof
01/26/2005EP1500722A1 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation
01/26/2005EP1500633A1 Production method for compound semiconductor single crystal
01/26/2005CN1570225A Device and method for producing single crystals by vapor deposition
01/26/2005CN1570223A Silica glass crucible
01/26/2005CN1570222A Sapphire crystal with absorption on ultraviolet band
01/26/2005CN1569746A Method for preparing inorganic crystal whisker with SiO2-coated surface
01/26/2005CN1186824C Method and apparatus for mfg. compound semiconductor device
01/26/2005CN1186484C Tellurium-Zinc-cadmium crystal annealing and modifying method
01/26/2005CN1186483C Preparation of Nd-Y-Al garnet dosed and Y-Al garnet composite laser crystals
01/26/2005CN1186482C Process for preparing low temperature phase barium metaborate mono-crystal film
01/26/2005CN1186481C Method for growing rutile crystal
01/25/2005US6846539 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
01/25/2005US6846434 Aluminum oxide material for optical data storage
01/20/2005WO2005006421A1 Epitaxial growth process
01/20/2005WO2005006420A1 Nitride semiconductor element and method for manufacturing thereof
01/20/2005WO2005005320A1 A ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof
01/20/2005WO2005005316A1 Process for the manufacture of high purity metal fluorides
01/20/2005US20050014653 Methods for forming superconductor articles and XRD methods for characterizing same
01/20/2005US20050014371 Crystalline membranes
01/20/2005US20050011860 Substrate for magnetic recording medium, method for manufacturing the same and magnetic recording medium
01/20/2005US20050011459 Chemical vapor deposition reactor
01/20/2005US20050011436 Chemical vapor deposition reactor
01/20/2005US20050011433 Tough diamonds and method of making thereof
01/20/2005US20050011431 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
01/20/2005DE10355216A1 Festkörper Solid
01/20/2005DE10328842A1 Beschichtete Halbleiterscheibe und Verfahren und Vorrichtung zur Herstellung der Halbleiterscheibe Coated wafer and method and apparatus for producing the semiconductor wafer
01/20/2005DE102004029833A1 Nickelbasis-Superlegierung und Einkristall-Gussstücke Nickel-base superalloy and single crystal castings
01/19/2005EP1498518A1 Silicon carbide single crystal and method for preparation thereof
01/19/2005EP1498517A1 Method for producing silicon single crystal and, silicon single crystal and silicon wafer
01/19/2005EP1498516A1 Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer
01/19/2005EP1497480A1 Thick films of yba sb 2 /sb cu sb 3 /sb o sb 7-y /sb and preparation method thereof
01/19/2005EP1497226A2 Method for producing nitrides
01/19/2005CN1566417A Process for preparing zinc oxide crystal whisker
01/19/2005CN1566416A Neodymium-doped lanthanum vanadate (LaVO4) laser crystal and its preparation method
01/19/2005CN1566415A Neodymium-doped strontium-lanthanum borate ( Sr3La(BO3)3 ) laser crystal and its preparation method
01/19/2005CN1566414A Neodymium-doped strontium-yttrium borate ( Sr3Y(BO3)3 ) laser crystal and its preparation method
01/19/2005CN1566413A Strontium-gadolinium borate ( Sr3Gd(BO3)3 ) laser crystal and its preparation method
01/19/2005CN1566412A Neodymium-doped gadolinium-strontium-scandium borate laser crystal and its preparation method
01/19/2005CN1566411A Neodymium-doped barium-lanthanum borate ( Ba3La2(BO3)4 ) laser crystal and its preparation method and use