Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
05/2004
05/20/2004US20040096707 Oxidation of nitride layer; forming oxide; high temperature superconductivity
05/20/2004US20040096587 Epitaxial oxide films via nitride conversion
05/20/2004US20040096582 Low temperature vapor deposition; using organosilicon compound; thin film semiconductor
05/20/2004US20040094763 Relaxed, low-defect SGOI for strained Si CMOS applications
05/20/2004US20040094249 Aluminum alloy sheet excellent in formability and hardenability during baking of coating and method for production thereof
05/20/2004US20040094233 Intermetallic compound superconducting material comprising magnesium and beryllium and alloy superconducting material containing the intermetallic compound and method for preparing the same
05/20/2004US20040094084 Method for growing GaN compound semiconductor crystal and semiconductor substrate
05/19/2004EP1419538A2 Methods and reactors for forming superconductor layers
05/19/2004DE10250822A1 Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium A method for producing a readily volatile impurity doped silicon monocrystal
05/19/2004CN1498196A Quartz glass component and method for production thereof
05/19/2004CN1497614A Preparation method of high-temp. superconducting layer
05/19/2004CN1497071A Evaluation technology of reactivity of quartz glass and fused silicon and vibration of fused silicon surface
05/19/2004CN1496965A Reinorcing method of quartz glass material and reinforced quartz glass crucible
05/19/2004CN1150427C Non-linear cyrstals preparation method thereof and uae thereof
05/19/2004CN1150355C Method and device for continuously pulling up crystal
05/18/2004US6736894 Method of manufacturing compound single crystal
05/18/2004US6736893 Process for growing calcium fluoride monocrystals
05/13/2004WO2004040650A1 Soi wafer and method for manufacturing soi wafer
05/13/2004WO2004040047A1 Single crystal base thin film
05/13/2004WO2004040046A1 Method for forming thin film on basic material through intermediate layer
05/13/2004WO2004040045A1 Method for producing silicon wafer
05/13/2004WO2004039731A2 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys
05/13/2004WO2002031232A9 Method and device for producing optical fluoride crystals
05/13/2004US20040092053 Transparent layer of a LED device and the method for growing the same
05/13/2004US20040091710 For use in display devices, information storage, biological tagging materials, photovoltaics, sensors and catalysts
05/13/2004US20040089919 Single crystal GaN substrate, method of growing same and method of producing same
05/13/2004US20040089224 Process for producing low defect density silicon
05/13/2004US20040089223 Preparation of crystals
05/13/2004US20040089221 Bulk monocrystalline gallium nitride
05/12/2004EP1417702A1 Method and apparatus for doping semiconductors
05/12/2004EP1417358A1 Method for producing a monocrystalline component, having a complex moulded structure
05/12/2004CN1495915A 光电转换元件 A photoelectric conversion element
05/12/2004CN1149640C Semiconductor thin film and thin film device
05/12/2004CN1149306C Method for making silicon single crystal
05/12/2004CN1149182C Method for mfg, piezoelectric ceramics
05/11/2004US6734960 Wafer defect measuring method and apparatus
05/11/2004US6734035 Method for manufacturing light-emitting device using a group III nitride compound semiconductor
05/11/2004US6733895 ZnO film, method for manufacturing the same, and luminescent element including the same
05/06/2004US20040087117 Measuring reflection of sample; illumination of zones; forming model; test structure of optical monitoring; layer of alternating patterned dielectrics with layer of flat reflecting material; multilayer three-dimensional layout
05/06/2004US20040083947 Process for producing a silicon single crystal which is doped with highly volatile foreign substances
05/06/2004US20040083946 Method and apparatus for growing multiple crystalline ribbons from a single crucible
05/06/2004EP1415022A1 System and method for producing synthetic diamond
05/06/2004EP1415012A1 Process and apparatus for producing crystalline thin film buffer layers and structures having biaxial texture
05/06/2004EP1222324B1 Czochralski process for growing single crystal silicon by controlling the cooling rate
05/06/2004DE10248962A1 Production of a high temperature superconductor layer on a substrate for use in high energy applications comprises depositing a superconducting layer with a low growth rate
05/05/2004CN1494608A EFG crystal growth apparatus and method
05/05/2004CN1493718A Preparation method of barium sodium niobate cylindrical monocrystal particle
05/04/2004US6730611 Nitride semiconductor growing process
04/2004
04/29/2004WO2004036657A1 Polycrystalline silicon substrate
04/29/2004WO2004035879A1 Method of measuring point defect distribution of silicon single crystal ingot
04/29/2004WO2004035877A2 Method and apparatus for crystal growth
04/29/2004WO2004012227A3 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
04/29/2004WO2002101120A3 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
04/29/2004US20040079958 Method for manufacturing gallium nitride compound semiconductor
04/29/2004DE10110697B4 Vorrichtung und Verfahren zum Züchten von Halbleitereinkristallen An apparatus and method for growing semiconductor single crystals
04/28/2004EP1414079A1 Diamond high brightness ultraviolet ray emitting element
04/28/2004EP1413652A1 Evaluation process of reactivity of silicia glass with silicon melt and vibration at its surface, and silicia glass crucible not causing the surface vibration
04/28/2004EP1412563A2 High quality colloidal nanocrystals and methods of preparation of the same in non-coordinating solvents
04/28/2004EP1219731B1 FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF
04/28/2004CN1492940A Laminated film and method of forming film
04/28/2004CN1492084A Large size strontium borophosphate nonlinear optical crystal and its growth method and use
04/27/2004US6726766 Beads of a polycrystalline alkali-metal or alkaline-earth metal fluoride, their preparation, and their use for preparing optical single crystals
04/27/2004US6726765 Protein crystallization apparatus and protein crystallization method
04/27/2004US6726764 Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
04/22/2004WO2004034457A1 Annealed wafer and annealed wafer manufacturing method
04/22/2004WO2004033767A1 Method for solid-state single crystal growth
04/22/2004WO2004033370A1 Nanopellets and method of making nanopellets
04/22/2004US20040077166 Semiconductor crystal growing method and semiconductor light-emitting device
04/22/2004US20040076894 Exposing the silicon layer to a laser beam through a mask having a phase shift layer; stripes having a first width separated by slits, and an overlapping blocking layer having stripes having a narrower width and parallel to the first
04/22/2004US20040075105 Semiconductor heterostructures having reduced dislocation pile-ups and related methods
04/22/2004US20040075082 Single-crystalline film and process for production thereof
04/22/2004DE10296669T5 Behälter mit mehreren Kammern zur Züchtung von Kalziumfluorid- bzw. Fluorkalziummonokristallen A multi-chamber container for the production of calcium fluoride or calcium fluoride single crystals
04/22/2004DE10296668T5 Verfahren zur Züchtung von Kalziumfluorid-Monokristallen A method of growing monocrystals of calcium fluoride
04/22/2004DE10296589T5 Herstellung von bei 157 nm transmittierenden Bariumfluorid-Kristallen mit permeablem Graphit Manufacture of transmitting at 157 nm barium fluoride crystals with porous graphite
04/21/2004EP1411545A1 Vapor growth method and vapor growth device
04/21/2004EP1411155A1 3c-sic nanowhisker synthesizing method and 3c-sic nanowhisker
04/21/2004EP1411154A1 Oxide high-critical temperature superconductor acicular crystal and its production method
04/21/2004EP1409774A2 Method of making high purity optical fluoride crystals
04/21/2004CN1491300A Method for reducing oxygen component and carbon component in fluoride
04/21/2004CN1491299A Semiconductor crystal growing method and semiconductor light-emitting device
04/21/2004CN1490439A Method for preparing stable nanometer cuprous oxide whiskers with chemical precipitation method
04/21/2004CN1490438A X-ray radiationproof cerium dosed pleonaste crystal and preparation thereof
04/21/2004CN1490435A Rareearth supermagnetostrictive material one step preparation and apparatus and products thereof
04/21/2004CN1146727C Process for preparing film electrode of gold-monocrystal nano island array
04/21/2004CN1146678C Process for preparing silcion melt from polysilicon charge
04/20/2004US6723166 Seed crystal holder with lateral mount for an SiC seed crystal
04/20/2004CA2211705C Diamond
04/15/2004WO2004031732A2 Nanocrystals in ligand boxes exhibiting enhanced chemical, photochemical, and thermal stability, and methods of making the same
04/15/2004WO2004031102A1 Method for producing inverse opaline structures
04/15/2004WO2003106741A3 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
04/15/2004US20040072381 Domain epitaxy for thin film growth
04/15/2004US20040071882 Precursor solutions and methods of using same
04/15/2004US20040070012 Low defect density silicon
04/15/2004US20040069231 Chemical vapor deposition process and apparatus thereof
04/15/2004US20040069214 Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and a low melting point dopant feeding method thereof
04/15/2004US20040069211 Method of forming single crystals of ceramic, semiconductive or magnetic material
04/15/2004US20040069210 Method for forming aluminum oxide material used in optical data storage
04/15/2004CA2500327A1 Method for producing inverse opaline structures
04/14/2004EP1408015A2 Quartz glass crucible, its process of manufacture and use
04/14/2004CN1489643A Process for preparing single crystal silicon having improved gate oxide integrity