Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2003
12/16/2003US6663736 Method for making a bonded sapphire structure
12/16/2003US6663711 Growth in solution in a float zone of crystals of a compound or an alloy
12/16/2003US6663710 Method for continuously pulling up crystal
12/11/2003WO2003101899A1 Method for preparing diamond from graphite by inner shell electron excitation
12/11/2003US20030226499 Method for producing a positively doped semiconductor with large forbidden band
12/11/2003US20030226498 Semiconductor-nanocrystal/conjugated polymer thin films
12/10/2003EP1369905A2 Epitaxial substrates and semiconductor devices
12/10/2003EP1369708A1 Optical member and method of producing the same, and projection aligner
12/10/2003EP1369506A1 Method of making photonic crystal
12/10/2003EP1127962B1 Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer
12/10/2003CN1460729A Preparation f green light fallium nitride base LED epitaxial wafer by adopting multiquantum well
12/10/2003CN1460634A Pure siler nano tube array and its preparation method
12/10/2003CN1460573A Surface processing method for titanium-doped sapphire crystal laser rod
12/10/2003CN1130308C Si-Ge crystal
12/09/2003US6660083 Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE
12/09/2003US6660082 Method and apparatus for doping a melt with a dopant
12/04/2003WO2003100839A2 Method for epitaxial growth of a gallium nitride film separated from its substrate
12/04/2003WO2003099708A1 Process for producing nanoparticle and nanoparticle produced by the process
12/04/2003US20030221610 Process for growing calcium fluoride single crystals
12/04/2003US20030221608 Method of making photonic crystal
12/04/2003US20030221607 Process for growing of optical fluorite single crystals
12/03/2003EP1367214A1 Polycrystalline diamond cutters with enhanced resistance
12/03/2003EP1366827A1 Substrate adapted for the fabrication of organised molecular monolayers and structures thus obtained
12/02/2003US6658376 Determination of vibration frequency characteristics of electroded crystal plate
12/02/2003US6656615 Bulk monocrystalline gallium nitride
12/02/2003US6656591 Diamond-coated body including interface layer interposed between substrate and diamond coating, and method of manufacturing the same
12/02/2003US6656272 Method of epitaxially growing submicron group III nitride layers utilizing HVPE
11/2003
11/28/2003CA2428952A1 Method of making photonic crystal
11/27/2003WO2003098757A1 Light emitting element structure having nitride bulk single crystal layer
11/27/2003WO2003098708A1 Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
11/27/2003WO2003097532A1 Process for manufacturing a gallium rich gallium nitride film
11/27/2003WO2003038868A3 High resistivity silicon carbide single crystal and method of producing it
11/27/2003US20030218644 Board for electronic device, electronic device, ferroelectric memory, electronic apparatus, ink-jet recording head, and ink-jet printer
11/27/2003US20030218151 Doped alumina; crystal structure; optical recording media
11/27/2003US20030217869 Polycrystalline diamond cutters with enhanced impact resistance
11/27/2003US20030217689 Method of producing crystal and apparatus for producing crystal
11/27/2003CA2486178A1 Process for manufacturing a gallium rich gallium nitride film
11/26/2003EP1365489A1 Double, optionally doped, potassium-ytterbium tungstate single crystal, production method therefor and applications
11/26/2003EP1365048A1 Method for fabricating silicon single crystal
11/26/2003EP1365047A1 Diamond film and method for producing the same
11/26/2003EP1364912A2 Hydrogen-doped silica powder, its method of production and a quartz glass crucible made from the powder
11/26/2003EP1118880B1 Method of organic film deposition
11/26/2003EP1023246B1 Diamond core with a diamond coating
11/26/2003CN1458305A ZnO nano crystal whisker material and its preparing method
11/26/2003CN1129349C Zone heating system with feedback control
11/26/2003CN1129169C Epitaxial chip
11/26/2003CN1128894C Hydrothermal preparing process for alkaline rare earth-carbonate crystal film
11/25/2003US6654711 Correction factors for the analysis of piezoelectric devices
11/25/2003US6652934 Silica glass crucible and method of fabricating thereof
11/25/2003US6652762 Method for fabricating nano-sized diamond whisker, and nano-sized diamond whisker fabricated thereby
11/25/2003US6652647 Crystal growth device and method
11/25/2003US6652645 Process for preparing a silicon melt
11/20/2003WO2003095719A1 Drop tube type granular crystal producing device
11/20/2003WO2003095717A1 Production method and production device for single crystal
11/20/2003WO2003095716A1 Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal
11/20/2003US20030215990 Methods for fabricating strained layers on semiconductor substrates
11/20/2003US20030213964 III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same
11/20/2003US20030213949 Epitaxial substrates and semiconductor devices
11/19/2003EP1363322A2 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
11/19/2003EP1230447B1 Method of controlling growth of a semiconductor crystal
11/19/2003CN1456714A Method for preparing phosphoric acid rare earth monocrystalline nano-thread
11/19/2003CN1128253C Continuous production process of zinc oxide whiskers
11/18/2003US6649434 Hetero-epitaxially grown at a high temperature of >/= 500 degrees C. and supply of oxygen is stopped and gradual cooling
11/18/2003US6649326 Photolithographic method and UV transmitting fluoride crystals with minimized spatial dispersion
11/18/2003US6649288 Nitride film
11/18/2003US6649287 Transistor, few or no cracks
11/18/2003US6648967 Crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot, and method therefor
11/18/2003CA2102781C Method and apparatus for plasma deposition
11/13/2003WO2003094240A1 High voltage switching devices and process for forming same
11/13/2003WO2003094214A1 Substrate for growing gallium nitride, method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
11/13/2003WO2003068699A8 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
11/13/2003US20030211741 Dielectric thin film, method for making the same and electric components thereof
11/13/2003US20030211710 Method of manufacturing III-V group compound semiconductor
11/13/2003US20030210726 High Repetition Rate UV Excimer Laser
11/13/2003US20030209192 Formation method for semiconductor layer
11/13/2003US20030209185 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
11/13/2003US20030209105 Preparation of nanocrystallites
11/13/2003CA2483403A1 High voltage switching devices and process for forming same
11/12/2003EP1361616A1 Compound semiconductor element based on group iii element nitride
11/12/2003EP1361298A1 Semiconductor crystal growing method and semiconductor light-emitting device
11/12/2003EP1360349A1 System and method for screening of nucleation tendency of a molecule in a levitated droplet
11/12/2003CN1455030A Self double-frequency blue laser crystal neodymium-doped gadolinium-aluminium borate
11/12/2003CN1127754C Semiconductor material
11/11/2003US6645833 Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method
11/11/2003US6645639 Epitaxial oxide films via nitride conversion
11/11/2003US6645295 Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
11/06/2003WO2003091822A2 Method for producing nitrides and uses thereof as fluorescent markers and light-emitting diodes
11/06/2003WO2003091484A1 Method for producing silicon single crystal and silicon single crystal wafer
11/06/2003WO2003091483A1 Method for producing silicon single crystal and, silicon single crystal and silicon wafer
11/06/2003WO2003091475A1 Thick films of yba2cu3o 7-y and preparation method thereof
11/06/2003WO2002063656A3 Chemical monolayer and micro-electronic junctions and devices containing same
11/06/2003US20030207132 The present invention relates to oxides on suitable substrates, as converted from nitride precursors. Oxidation of compounds for fabrication of a ferro-electric device.
11/06/2003US20030207125 Base substrate for crystal growth and manufacturing method of substrate by using the same
11/06/2003US20030205193 Method for achieving low defect density aigan single crystal boules
11/06/2003US20030205191 Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects
11/05/2003EP1358209A2 Crystallization of igf-1
11/05/2003CN1453642A Projection optical system, its producing method, exposure apparatus and exposure method
11/05/2003CN1453399A Filtering and inertness of combustible dust in process waste gas
11/04/2003US6642546 Nitride based semiconductor device and method of forming the same
11/04/2003US6642123 Method of fabricating a silicon wafer including steps of different temperature ramp-up rates and cool-down rates
1 ... 187 188 189 190 191 192 193 194 195 196 197 198 199 200 201 202 203 204 205 206 207 ... 272