| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 08/21/2003 | US20030154911 Single crystals of lead magnesium niobate-lead titanate |
| 08/21/2003 | US20030154906 Process for producing a highly doped silicon single crystal |
| 08/21/2003 | US20030154905 Crystal manufacture method |
| 08/20/2003 | EP1049820B1 Method for epitaxial growth on a substrate |
| 08/20/2003 | EP1002335B1 Oxygen precipitating process without oxygen outdiffusion in silicon wafer |
| 08/20/2003 | CN1436880A Method of eliminating compounding defect in HgCdTe material produced via melt growth process |
| 08/19/2003 | US6608427 High-sensitivity flexible ceramic sensor |
| 08/19/2003 | US6607594 Method for producing silicon single crystal |
| 08/19/2003 | US6607593 Method of manufacturing a mono-crystalline silicon ball |
| 08/14/2003 | WO2003067672A2 Methods and reactors for forming superconductor layers |
| 08/14/2003 | WO2003066930A1 Diamond electrode |
| 08/14/2003 | US20030153168 3-5 Group compound semiconductor, process for producing the same, and compound semiconductor element using the same |
| 08/14/2003 | US20030153112 Method for manufacturing light-emitting device using a group lll nitride compound semiconductor |
| 08/14/2003 | US20030150379 Crystal forming apparatus and method for using same |
| 08/14/2003 | US20030150373 Crystal growth method |
| 08/13/2003 | EP1335421A1 Production method for silicon wafer and silicon wafer |
| 08/13/2003 | EP1334525A2 Precursor solutions and methods of using same |
| 08/13/2003 | EP1242647B1 Method of depositing transition metal nitride thin films |
| 08/12/2003 | US6605569 A superconductor according to claim 1, comprising a copper oxide superconductor having a formulation expressed by Cu1-xMx(Ba1-y-mSryRm)2(Ca1-zMgz)n-1CunO2n+4-w (in which R is at least one landthanide and M another metal |
| 08/12/2003 | US6605352 Corrosion and erosion resistant thin film diamond coating and applications therefor |
| 08/12/2003 | US6605152 Catch pan for melt leakage in apparatus for pulling single crystal |
| 08/12/2003 | US6605150 Low defect density regions of self-interstitial dominated silicon |
| 08/12/2003 | US6605149 Method of stacking polycrystalline silicon in process for single crystal production |
| 08/07/2003 | WO2003065465A2 Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
| 08/07/2003 | WO2003065429A1 GaN COMPOUND SEMICONDUCTOR CRYSTAL MAKING METHOD |
| 08/07/2003 | WO2003065094A1 Photonic crystals having a skeleton structure |
| 08/07/2003 | WO2003064021A1 Improved pressure vessel |
| 08/07/2003 | US20030147801 Process for producing aligned carbon nanotube films |
| 08/07/2003 | US20030146481 Piezoelectric substrate for surface acoustic wave device, and surface acoustic wave device |
| 08/07/2003 | US20030145783 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
| 08/07/2003 | US20030145781 Process and apparatus for producing a single crystal of semiconductor material |
| 08/07/2003 | US20030145780 Silicon single crystal and process for producing it |
| 08/07/2003 | US20030145779 Shaped nanocrystal particles and methods for making the same |
| 08/07/2003 | CA2475241A1 Photonic crystals having a skeleton structure |
| 08/06/2003 | EP1333462A2 Plasma display panel suitable for high-quality display and production method |
| 08/06/2003 | EP1333111A1 Method for producing crystal thin plate and solar cell comprising crystal thin plate |
| 08/06/2003 | EP1332247A1 Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation |
| 08/06/2003 | EP1332246A2 Process for preparing low defect density silicon using high growth rates |
| 08/06/2003 | CN1434482A Method for making gallium nitride crystal |
| 08/06/2003 | CN1434152A Bridgman growth method for gallium strontium germanate piezoelectric crystal |
| 08/05/2003 | US6602345 Heater arrangement for crystal growth furnace |
| 07/31/2003 | WO2003063226A2 Oxide layer on a gaas-based semiconductor structure and method of forming the same |
| 07/31/2003 | WO2003063215A1 Nitride semiconductor device manufacturing method |
| 07/31/2003 | WO2003062508A1 Crystal forming apparatus and method for using same |
| 07/31/2003 | WO2003062507A2 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material |
| 07/31/2003 | WO2002064627A3 Crystallization of igf-1 |
| 07/31/2003 | US20030141301 High temperature high pressure capsule for processing materials in supercritical fluids |
| 07/31/2003 | US20030140845 Pressure vessel |
| 07/31/2003 | US20030140843 Method for fabricating silicone single crystal |
| 07/30/2003 | EP1330562A1 Method for the production of low defect density silicon |
| 07/30/2003 | CN1433488A Polycrystalline silicon rod and method for processing the same |
| 07/30/2003 | CN1116231C Manufacturing method for calcium flubride crystal and processing method for calcium fluoride power |
| 07/29/2003 | US6599816 Method of manufacturing silicon epitaxial wafer |
| 07/29/2003 | US6599603 Silicon wafer |
| 07/29/2003 | US6599360 Silicon wafer, method for determining production conditions of silicon single crystal and method for producing silicon wafer |
| 07/29/2003 | US6599178 Diamond cutting tool |
| 07/24/2003 | WO2003060981A1 Method for gettering transition metal impurities in silicon crystal |
| 07/24/2003 | WO2003060967A1 Susceptor for epitaxial growth and epitaxial growth method |
| 07/24/2003 | WO2003060965A1 Semiconductor wafer and method for producing the same |
| 07/24/2003 | WO2003060596A2 Semiconductor liquid crystal composition and methods for making the same |
| 07/24/2003 | US20030137018 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same |
| 07/24/2003 | US20030136986 Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same |
| 07/24/2003 | US20030136943 Semiconductor liquid crystal composition and methods for making the same |
| 07/23/2003 | EP1329539A2 Quarz glass crucible for pulling up silicon single crystal and method for producing the same |
| 07/23/2003 | EP1328668A1 Heat shield assembly for crystal pulling apparatus |
| 07/23/2003 | CN1432076A Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| 07/23/2003 | CN1432075A Method and device for feeding arsenic dopant into silicon crystal growing process |
| 07/23/2003 | CN1431930A High temp/high pressure colour change of diamond |
| 07/23/2003 | CN1431929A High temp/high pressure colour change of diamond |
| 07/23/2003 | CN1115715C Method of processing semiconductor film and semiconductor device produced by such method |
| 07/23/2003 | CN1115431C Boron zinc magnesium phosphate sosoloid and its prepn. process |
| 07/23/2003 | CN1115430C Non-linear optical crystal of large-size high-temp zinc borohposphate and its prepn. process and use |
| 07/23/2003 | CN1115428C Method for growing monocrystal of yttrium boride |
| 07/23/2003 | CN1115427C Process and appts. for producing polycrystalline semiconductor |
| 07/22/2003 | US6596079 III-V nitride substrate boule and method of making and using the same |
| 07/22/2003 | US6596078 Method of producing oxide whiskers, oxide whiskers, and photoelectric conversion apparatus |
| 07/22/2003 | US6596075 Method of producing a crystal sheet, apparatus for use in producing the same, and solar cell |
| 07/22/2003 | CA2296808C Electrochemical process for fabricating article exhibiting substantial three-dimensional order and resultant article |
| 07/17/2003 | WO2003036698A3 Method of depositing high-quality sige on sige substrates |
| 07/17/2003 | US20030134520 Silicon semiconductor substrate and method for production thereof |
| 07/17/2003 | US20030132477 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device |
| 07/17/2003 | US20030132470 Stacked memory cell having diffusion barriers |
| 07/17/2003 | US20030131786 High yield method for preparing silicon nanocrystals with chemically accessible surfaces |
| 07/17/2003 | US20030131783 Method of stacking polycrystalline silicon in process for single crystal production |
| 07/16/2003 | EP1328014A1 Semiconductor base material and method of manufacturing the material |
| 07/16/2003 | EP1153161B1 Tungsten doped crucible and method for preparing same |
| 07/10/2003 | WO2003056073A1 Group iii nitride semiconductor substrate and its manufacturing method |
| 07/10/2003 | US20030129834 Semiconductor wafer with crystal lattice defects, and process for producing this semiconductor wafer |
| 07/10/2003 | US20030129501 Exposure photosensitive media to optics intensity pattern; heating; controlling temperature; prevention variations in refractive index |
| 07/10/2003 | US20030127630 Annealing; process control |
| 07/10/2003 | US20030127051 Film containing barium fluoride on a surface of a substrate, and impinging a first reactant gas mixture on the film |
| 07/10/2003 | US20030127044 Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
| 07/10/2003 | US20030127041 Lapping, mechanical polishing, and reducing internal stress of a gallium, aluminum and indium nitride wafer by thermal annealing or chemical etching; crystallographic plane surfaces |
| 07/09/2003 | EP1326269A1 Method of producing silicon wafer and silicon wafer |
| 07/09/2003 | EP1324959A1 Electrophoretically redensified sio 2? moulded body, method for the production and use thereof |
| 07/09/2003 | EP1324948A2 Crystalline mww-type titanosilicate, its preparation and use thereof for producing epoxides |
| 07/09/2003 | EP1324946A1 Ultracoarse, monorystalline tungsten carbide and method for producing the same, and hard metal produced therefrom |
| 07/09/2003 | EP1169496B1 Strontium doping of molten silicon for use in crystal growing process |
| 07/09/2003 | CN1429285A Fluoride crystalline optical lithography lens element blank |
| 07/09/2003 | CN1428464A Preparation method of chemical metering ratio lithium niobate monocrystal |