| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 06/23/2004 | CN1507682A High repetition rate UV excimer laser |
| 06/23/2004 | CN1507506A High-resisting silicon carbide substrate for semiconductor devices with high breakdown voltage |
| 06/17/2004 | WO2004051718A1 3-5 group compound semiconductor and method for preparation thereof |
| 06/17/2004 | WO2004051707A2 Gallium nitride-based devices and manufacturing process |
| 06/17/2004 | WO2004009492A3 Diamondoid-based components in nanoscale construction |
| 06/17/2004 | WO2003005417A3 Method and apparatus for growing semiconductor crystals with a rigid support |
| 06/17/2004 | US20040115876 Method of manufacturing silicon carbide film |
| 06/17/2004 | US20040115854 Method of MOCVD growth of compounds including GaAsN alloys using an ammonia precursor and radiation |
| 06/17/2004 | US20040115731 Microfluidic protein crystallography |
| 06/17/2004 | US20040115440 Crucible with stabilizing layer with higher softening points; heat injection |
| 06/17/2004 | US20040115116 Method for creating diamond |
| 06/17/2004 | US20040113236 Semiconductor wafer and method for producing the same |
| 06/17/2004 | US20040112279 Framework assisted crystal growth |
| 06/17/2004 | US20040112276 CZ raw material supply method |
| 06/17/2004 | US20040112274 Reinforcing process of silica glass substance and reinforced silica glass crucible |
| 06/16/2004 | EP1429374A2 Growth of III-Nitride films on mismatched substrates without conventional low temperature nucleation layers |
| 06/16/2004 | EP1428912A2 Method of preparing a compound semiconductor crystal doped with carbon |
| 06/16/2004 | EP1428911A1 Framework assisted crystal growth |
| 06/16/2004 | EP1427873A1 High yield method for preparing silicon nanocrystals with chemically accessible surfaces |
| 06/16/2004 | CN1505701A Method for flattening surface of oxide crystal to ultra high degree |
| 06/16/2004 | CN1154154C Dual process semiconductor hetero structure and methods |
| 06/16/2004 | CN1153856C Conversion of doped polycrystalline material to single crystal material |
| 06/15/2004 | US6750481 Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the same |
| 06/15/2004 | US6750121 Apparatus and method for forming single crystalline nitride substrate using hydride vapor phase epitaxy and laser beam |
| 06/15/2004 | US6750120 Method and apparatus for MOCVD growth of compounds including GaAsN alloys using an ammonia precursor with a catalyst |
| 06/15/2004 | US6749957 Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element |
| 06/15/2004 | US6749687 In situ growth of oxide and silicon layers |
| 06/15/2004 | US6749686 Crystal growth method of an oxide and multi-layered structure of oxides |
| 06/15/2004 | US6749663 Reducing and carburizing tungsten and/or molybdenum oxide powders in the presence of alkali metal compounds |
| 06/10/2004 | WO2004049441A2 Low thermal budget fabrication of ferroelectric memory using rtp |
| 06/10/2004 | WO2004049403A2 Depositing nanowires on a substrate |
| 06/10/2004 | WO2004048647A1 Topological crystal of transition metal chalcogenide and method of forming the same |
| 06/10/2004 | WO2004048258A2 Method for forming carbon nanotubes |
| 06/10/2004 | US20040110347 Method of production of nanoparticle and nanoparticle produced by the method of production |
| 06/10/2004 | US20040110163 Preparing molecular conductive wire comprising nucleic acids forming a central canal composed of linearly arranged metal ions within the canal and an electron-rich external surface |
| 06/10/2004 | US20040110002 Semiconductor nanocrystal heterostructures |
| 06/10/2004 | US20040109786 Nickel-base superalloy composition and its use in single-crystal articles |
| 06/10/2004 | US20040108506 Methods of forming a high conductivity diamond film and structures formed thereby |
| 06/10/2004 | US20040107895 Quartz thin film |
| 06/10/2004 | US20040107894 Single crystal pulling device and method and superconducting magnet |
| 06/10/2004 | US20040107893 As-grown single crystal of alkaline earth metal fluoride |
| 06/10/2004 | US20040107891 Method for producing group III nitride compound semiconductor substrate |
| 06/09/2004 | EP1426457A2 Nickel-base superalloy composition and its use in single-crystal articles |
| 06/09/2004 | EP0918586B1 Tool, especially for machining |
| 06/09/2004 | CN1503993A Precursor solutions and methods of using same |
| 06/09/2004 | CN1503327A Relaxed, low-defect SGOI for strained Si CMOS applications |
| 06/09/2004 | CN1502728A As-grown single crystal of alkaline eart hmetal fluoride |
| 06/09/2004 | CN1502727A As-grown single crystal of calcium fluoride |
| 06/09/2004 | CN1502726A Single crystal pulling apparatus for metal fluoride |
| 06/09/2004 | CN1502717A Heat treatment method for improving high-niobium reinforcing type monocrystal high temp alloy use property |
| 06/09/2004 | CN1152979C Coated body, its method of production and its use |
| 06/08/2004 | US6747787 Optically functional device, single crystal substrate for the device and method for its use |
| 06/08/2004 | US6747317 Semiconductor device |
| 06/08/2004 | US6746787 Manufacturing method of silicon carbide single crystals |
| 06/03/2004 | WO2004046023A2 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission |
| 06/03/2004 | US20040104384 Growth of high temperature, high power, high speed electronics |
| 06/02/2004 | EP1424410A1 Semiconductor crystal producing method |
| 06/02/2004 | EP1424408A1 Single crystal pulling apparatus for metal fluoride |
| 06/02/2004 | EP1424405A2 Method and apparatus for fabricating coated substrates |
| 06/02/2004 | EP1423259A1 Free-standing (al, ga, in)n and parting method for forming same |
| 06/02/2004 | EP0867531B1 Single crystal production apparatus and process |
| 06/02/2004 | CN1502117A 半导体晶片及其制造方法 A semiconductor wafer and manufacturing method thereof |
| 06/02/2004 | CN1501897A Electrophoretically redensified sio2 moulded body, method for the production and use thereof |
| 06/02/2004 | CN1501449A Method for making polysilicon layer |
| 06/02/2004 | CN1500919A Method for preparing gallium nitride single crystal film |
| 06/02/2004 | CN1152396C Superconducting magnet and production method thereof |
| 06/01/2004 | US6743643 Stacked memory cell having diffusion barriers |
| 06/01/2004 | US6743533 Oxide superconductor, manufacturing method thereof, and base substrate therefor |
| 06/01/2004 | US6743472 Coating material for absorbing radiant heat, manufacturing method thereof |
| 05/27/2004 | WO2004044958A2 Composition and method for low temperature deposition of silicon-containing films |
| 05/27/2004 | WO2003016240A3 Components with bearing or wear-resistant surfaces |
| 05/27/2004 | US20040102056 Production method for silicon wafer and silicon wafer |
| 05/27/2004 | US20040101977 Low thermal budget fabrication of ferroelectric memory using RTP |
| 05/27/2004 | US20040099918 Electronic device substrate structure and electronic device |
| 05/27/2004 | US20040099871 Monocrystalline gallium nitride localized substrate and manufacturing method thereof |
| 05/27/2004 | US20040099210 Single crystal pulling apparatus for a metal fluoride |
| 05/27/2004 | US20040099207 As-grown single crystal of calcium fluoride |
| 05/27/2004 | US20040099206 Process and device for growing single crystals |
| 05/27/2004 | US20040099205 Method of growing oriented calcium fluoride single crystals |
| 05/26/2004 | EP1422753A1 Production method for anneal wafer and anneal wafer |
| 05/26/2004 | EP1422746A2 Monocrystalline gallium nitride localized substrate and manufacturing method thereof |
| 05/26/2004 | EP1422322A1 As-grown single crystal of alkaline earth metal fluoride |
| 05/26/2004 | EP1422321A1 As-grown single crystal of calcium fluoride |
| 05/26/2004 | EP0988407B1 Method for producing coated workpieces, which are coated with an epitactic layer |
| 05/26/2004 | CN1500160A Method for mfg. ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |
| 05/26/2004 | CN1500159A Low defect density silicon substantially free of oxidution induced stacking faults having vacancy-dominated core |
| 05/26/2004 | CN1498988A Process for mfg. silicon single crystal having doped high volatile foreign impurity |
| 05/26/2004 | CN1151543C Semiconductor device and its producing method |
| 05/26/2004 | CN1151513C Mg-doped high-temperature superconductor having low superconducting anisotropy and method for producing superconductor |
| 05/26/2004 | CN1151318C Lithium niobate crysal with near stoichimetric ratio and its growth process |
| 05/25/2004 | US6740421 Rolling process for producing biaxially textured substrates |
| 05/25/2004 | US6740403 Graphitic polyhederal crystals in the form of nanotubes, whiskers and nanorods, methods for their production and uses thereof |
| 05/25/2004 | US6740160 Crystal growing apparatus |
| 05/25/2004 | US6740159 Method of making a fracture-resistant calcium fluoride single crystal and its use |
| 05/25/2004 | CA2168871C Crystalline multilayer structure and manufacturing method thereof |
| 05/21/2004 | WO2004042836A1 Thin film multilayer body, electronic device using such thin film multilayer body, actuator, and method for manufacturing actuator |
| 05/21/2004 | WO2004042785A2 Functional bimorph composite nanotapes and methods of fabrication |
| 05/21/2004 | WO2004042784A2 Stabilized semiconductor nanocrystals |
| 05/21/2004 | WO2004042122A1 Method and apparatus for growing multiple crystalline ribbons from a single crucible |
| 05/21/2004 | WO2004027844A3 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage |