| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
|---|
| 10/05/2004 | US6800135 ZnO/sapphire substrate and method for manufacturing the same |
| 10/05/2004 | US6800133 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide butter layer |
| 09/30/2004 | WO2004084275A2 Method for making group iii nitride devices and devices produced thereby |
| 09/30/2004 | WO2004084268A2 Epitaxial semiconductor deposition methods and structures |
| 09/30/2004 | WO2004083499A1 PROCESS FOR PRODUCING GaN SUBSTRATE |
| 09/30/2004 | US20040192015 Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions |
| 09/30/2004 | US20040191966 Method for Manufacturing Buried Insulating Layer Type Single Crystal Silicon Carbide Substrate and Manufacturing Device for the Same |
| 09/30/2004 | US20040190429 Pixel array |
| 09/30/2004 | US20040188804 Obverse/reverse discriminative rectangular nitride semiconductor wafer |
| 09/30/2004 | US20040187771 Silica glass crucible |
| 09/30/2004 | US20040187766 Method of fabricating monocrystalline crystals |
| 09/29/2004 | EP1463115A2 Rectangular Nitride Compound Semiconductor Wafer with Obverse/Reverse Discriminative Marks |
| 09/29/2004 | EP1463108A2 Method for manufacturing buried insulating layer type single crystal silicon carbide substrate and manufacturing device for the same |
| 09/29/2004 | EP1462454A1 Array for crystallizing protein, device for crystallizing protein and method of screening protein crystallization using the same |
| 09/29/2004 | EP1462421A2 Silica glass crucible |
| 09/29/2004 | EP1461286A1 Differential stress reduction in thin films |
| 09/29/2004 | EP1332247B1 Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation |
| 09/29/2004 | EP1332246B1 Process for preparing low defect density silicon using high growth rates |
| 09/29/2004 | EP1052222B1 SiGe CRYSTAL |
| 09/29/2004 | CN1533593A Substrate for growing gallium nitride, itsproducing method and method for preparing gallium nitride substrate |
| 09/29/2004 | CN1532308A Method for producing organic nano tube with porous template |
| 09/28/2004 | US6797313 Superconductor methods and reactors |
| 09/28/2004 | US6797061 Quartz glass crucible for pulling up silicon single crystal and production method therefor |
| 09/28/2004 | CA2212653C A method for the heat treatment of znse crystal |
| 09/23/2004 | WO2004081987A2 Sige rectification process |
| 09/23/2004 | WO2004081986A2 Method to planarize and reduce defect density of silicon germanium |
| 09/23/2004 | WO2004081265A1 Method for forming oxide coating film, oxide coating film and coating film structure |
| 09/23/2004 | WO2004080889A2 Crystalline membranes |
| 09/23/2004 | WO2004066307A3 Stacked memory cell having diffusion barriers |
| 09/23/2004 | US20040185665 Fabrication method of semiconductor wafer |
| 09/23/2004 | US20040185251 Semiconducting oxide nanostructures |
| 09/23/2004 | US20040184977 Crystal forming apparatus and method for using same |
| 09/23/2004 | US20040183090 Method of manufacturing group III nitride substrate and semiconductor device |
| 09/23/2004 | US20040182308 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 09/22/2004 | EP1460154A1 Group iii nitride semiconductor substrate and its manufacturing method |
| 09/22/2004 | EP1460153A2 Crystal growth vessel and crystal growth method |
| 09/22/2004 | EP1459372A1 Shaped nanocrystal particles and methods for making the same |
| 09/22/2004 | CN1531033A Method for forming strong dielectric membrane |
| 09/22/2004 | CN1531022A Producing method for compound semiconductor layer and luminescent device, gas phase producing apparatus |
| 09/22/2004 | CN1167956C Scintillating substance and scintillating wave-guide element |
| 09/21/2004 | US6794683 Diamond substrate having piezoelectric thin film, and method for manufacturing it |
| 09/21/2004 | US6794533 Single-crystalline film and process for production thereof |
| 09/21/2004 | US6794210 Method for growing GaN compound semiconductor crystal and semiconductor substrate |
| 09/21/2004 | US6793902 Seed crystal for production of silicon single crystal and method for production of silicon single crystal |
| 09/21/2004 | US6793848 Annealing; process control |
| 09/21/2004 | US6793842 Controlling particle size, magnetism |
| 09/21/2004 | US6793732 Method and kit for growing cross-shaped crystals |
| 09/16/2004 | US20040180205 Boron doped diamond |
| 09/16/2004 | US20040177802 Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements |
| 09/15/2004 | EP1456871A1 Susceptor for epitaxial growth and epitaxial growth method |
| 09/15/2004 | EP1456866A2 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control |
| 09/15/2004 | EP1456436A1 Method for producing particles with diamond structure |
| 09/15/2004 | EP1395588A4 Process for the isolation of crystalline imipenem |
| 09/15/2004 | EP1049561B1 Turbine components comprising thin skins bonded to superalloy substrates |
| 09/15/2004 | EP0775015B1 Zeolite layers with controlled crystal width and preferred orientation grown on a growth enhancing layer |
| 09/15/2004 | CN1528957A Method for rapid growth of nano silicon wire |
| 09/15/2004 | CN1166824C Artificially synthetic luminous jewel and its synthesizing process |
| 09/15/2004 | CN1166822C Barium doping of molten silicon for use in crystal growing process |
| 09/15/2004 | CN1166821C Strontium doping of molten silicon for use in crystal growing process |
| 09/14/2004 | US6790279 Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor |
| 09/14/2004 | US6790278 Method for preparing low-resistant p-type SrTiO3 |
| 09/10/2004 | WO2004077461A1 Multilayer unit containing electrode layer and dielectric layer |
| 09/10/2004 | WO2004076725A1 Method for producing quartz glass crucible for use in pulling silicon single crystal and quartz glass crucible produced by said method |
| 09/10/2004 | WO2004076056A2 Microfluidic chemical reactor for the manufacture of chemically-produced nanoparticles |
| 09/10/2004 | WO2004055232A3 Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof |
| 09/09/2004 | US20040175844 Sacrificial template method of fabricating a nanotube |
| 09/09/2004 | US20040175499 Providing single crystal chemical vapour deposition (CVD) diamond which is coloured and heat treating the diamond under conditions suitable to produce the desired colour |
| 09/08/2004 | EP1185725B1 Continuous melt replenishment for crystal growth |
| 09/08/2004 | CN2639318Y Plaster whisker reaction still |
| 09/08/2004 | CN1526859A Guowth process of cerium doping yttrium aluminate crystal |
| 09/08/2004 | CN1526858A Prepn of flash aluminate crystal doped with trivalent cerium ion |
| 09/08/2004 | CN1526857A Prepn process of lamellar nano zinc oxide monocrystal |
| 09/08/2004 | CN1165922C Magnetic garnet monocrystal and Farady rotor using said monocrystal |
| 09/07/2004 | US6786969 Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal |
| 09/02/2004 | WO2004049441A3 Low thermal budget fabrication of ferroelectric memory using rtp |
| 09/02/2004 | US20040171493 Oxide high-critical temperature superconductor acicular crystal and its production method |
| 09/02/2004 | US20040169178 Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor |
| 09/02/2004 | US20040168636 Process and apparatus for producing cystalline thin film buffer layers and structures having biaxial texture |
| 09/01/2004 | EP1453159A1 Light emitting device structure using nitride bulk single crystal layer |
| 09/01/2004 | EP1453158A1 Nitride semiconductor laser element, and production method therefor |
| 09/01/2004 | EP1451394A1 Aluminum oxide material for optical data storage |
| 09/01/2004 | EP1201793B1 Method and apparatus for growing high quality single crystal |
| 09/01/2004 | CN1526172A Epitaxial thin films |
| 09/01/2004 | CN1526158A Susceptor for epitaxial growth and epitaxial growth method |
| 09/01/2004 | CN1526037A Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| 09/01/2004 | CN1164417C Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 08/31/2004 | US6784085 MIIIN based materials and methods and apparatus for producing same |
| 08/31/2004 | US6783621 Method of manufacturing a thermostructural composite material bowl, in particular for an installation that produces silicon single crystals |
| 08/26/2004 | WO2004073057A1 Method for manufacturing silicon wafer |
| 08/26/2004 | WO2004073045A2 Epitaxial growth of a zirconium diboride layer on silicon substrates |
| 08/26/2004 | WO2004073024A2 Method and apparatus for making continuous films ofa single crystal material |
| 08/26/2004 | WO2004071649A1 High temperature high pressure capsule for processing materials in supercritical fluids |
| 08/26/2004 | WO2004049403A3 Depositing nanowires on a substrate |
| 08/26/2004 | WO2004044958A3 Composition and method for low temperature deposition of silicon-containing films |
| 08/26/2004 | US20040166358 Multi-layered unit |
| 08/26/2004 | US20040166233 Depositing nanowires on a substrate |
| 08/26/2004 | US20040164380 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device |
| 08/26/2004 | US20040163585 Method for manufacturing polycrystalline silicon thin film and thin film transistor fabricated using polycrystalline silicon thin film manufactured by the manufacturing |
| 08/26/2004 | US20040163584 Semiconducting oxide nanostructures |
| 08/25/2004 | EP1449013A2 Method of making high repetition rate excimer laser crystal optics and uv-200nm transmitting optical floride crystal |