C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2004
11/04/2004	DE102004004536A1 Siliciumeinkristall und Verfahren zu dessen Herstellung Silicon single crystal and method of producing the
11/03/2004	CN1543518A Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
11/03/2004	CN1542452A Preparation method of CdSe nano-crystalline composite liposome microcapsule bubble used for fluorescence immunity detection
11/03/2004	CN1542451A Preparation method of CdSe nanometer crystal composite liposome microcapsule bubble used for fluorescence immunity detection
11/03/2004	CN1542450A Preparation method of CdSe nano-crystalline composite liposome microcapsule bubble used for fluorescence immunity detection
11/03/2004	CN1542173A Method for preparation of directional growth columnar crystal and monocrystal titanium alloy
11/03/2004	CN1542171A Metal organic compound vapor deposition device for the growth of zinc oxide semiconductor film
11/03/2004	CN1542170A TGT growth method of quadrivalent chromium-doped magnesium silicate crystal
11/03/2004	CN1541961A Method for the production of a shaped silica glass body
11/03/2004	CN1174126C Prodn. of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
11/03/2004	CN1174125C Non-linear infrared inorganic optical crystal and its preparing process
11/03/2004	CN1174123C Non-linear optical infrared crystal and its preparing process
11/02/2004	US6813070 Optical member for vacuum ultraviolet, and aligner and device manufacture method using same
11/02/2004	US6812499 Silicon-based film and photovoltaic element
11/02/2004	US6811726 Superconductor comprising oxides of cobalt, nickel, barium, strontium, sodium, potassium, and/or rubidium; high critical temperature
11/02/2004	US6811607 Method for forming aluminum oxide material used in optical data storage
10/2004
10/28/2004	WO2004092456A1 Single crystal producing method
10/28/2004	WO2004092455A1 Process for producing single crystal
10/28/2004	WO2004092089A1 Methods of obtaining photoactive coatings and articles made thereby
10/28/2004	US20040214412 Method of growing a semiconductor layer
10/28/2004	US20040214407 Semiconductor structures with structural homogeneity
10/28/2004	US20040211355 Oxygen-doped n-type gallium nitride freestanding single crystal substrate
10/28/2004	DE4137521B4 Analytisches Verfahren für teilchenförmiges Silicium An analytical method for particulate silicon
10/27/2004	EP1471168A1 Device and method for producing single crystals by vapour deposition
10/27/2004	EP1470592A2 Boron phosphide-based semiconductor device and production method thereof
10/27/2004	EP1470441A1 Photonic crystals having a skeleton structure
10/27/2004	CN1541287A High surface quality GaN wafer and method of fabricating same
10/27/2004	CN1541286A Method for producing monocrystalline component, having complex moulded structure
10/27/2004	CN1540045A Lithium tantanate substrate and its prepn. process
10/27/2004	CN1540044A Method for raising content of lithium in lithium niobate crystal
10/27/2004	CN1540043A Method for preparing thin film of lithium niobate crystal orientated in direction of caxis
10/27/2004	CN1540042A Method and device for prodn. of silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions
10/27/2004	CN1540041A Method for producing high purity silica crucible by electrolytic refining, mfg. method of crucible and pulling method
10/27/2004	CN1173079C Epitaxial growing method for aluminium nitride and growing chamber therefor
10/27/2004	CN1172849C Process for preparing magnesium crystal material
10/26/2004	US6808744 For pulling up monocrystalline silicone; superior in dimensional stability; inner quartz glass layer and an outer carbonaceouslayer, such as carbon fiber laminate; layers are integrally formed
10/26/2004	CA2356229C A method for fabricating a sic film and a method for fabricating a sic multi-layered film structure
10/26/2004	CA2283320C Scintillating substance and scintillating wave-guide element
10/21/2004	WO2004090201A2 Method for the production of monocrystalline crystals
10/21/2004	WO2004048258A3 Method for forming carbon nanotubes
10/21/2004	US20040209402 Method for making Group III nitride devices and devices produced thereby
10/21/2004	US20040209144 Gas storage medium and methods
10/21/2004	US20040207288 Method of producing lead zirconate titanate-based thin film, dielectric device and dielectric thin film
10/21/2004	US20040207048 Silicon wafer and manufacturing method thereof
10/21/2004	US20040206967 Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate
10/21/2004	US20040206387 formed via radio frequency magnetron sputtering or chemical vapor deposition; epitaxial growth
10/21/2004	US20040206299 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
10/21/2004	US20040206297 In situ growth of oxide and silicon layers
10/20/2004	EP1468128A2 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
10/20/2004	CN1539172A Superconductor method and reactor
10/20/2004	CN1538523A Heavy current medium film and its manufadturng method, heavy-curent medium storage, pizeoelectric element
10/20/2004	CN1537979A Method of manufacturing buried insulating layer type single crystal silicon carbide substrate and equipment
10/20/2004	CN1172029C Method and apparatus for growing high quality single crystal
10/19/2004	US6806571 III nitride compound semiconductor element an electrode forming method
10/19/2004	US6805982 Epitaxial substrates and semiconductor devices
10/19/2004	US6805746 Method for supplying CZ material
10/19/2004	US6805745 High quality, semiconductor-grade, single crystals of silicon carbide; optics, electronics; minimization of gapping between tiles
10/19/2004	US6805744 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates
10/19/2004	US6805742 Silicon semiconductor substrate and process for producing the same
10/14/2004	WO2004088288A1 Method for analyzing impurities (color centers) of fluoride and process for producing material for growing single crystal
10/14/2004	WO2004088005A1 HIGH-DENSITY COLUMNAR ZnO CRYSTAL FILM AND PROCESS FOR PRODUCING THE SAME
10/14/2004	WO2004087564A1 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
10/14/2004	WO2004020686A3 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
10/14/2004	WO2003083187A8 High pressure high temperature growth of crystalline group iii metal nitrides
10/14/2004	US20040201030 GaN growth on Si using ZnO buffer layer
10/14/2004	US20040200405 Crystallization method
10/14/2004	DE102004010676A1 Verfahren zur Herstellung eines Halbleiterwafers A process for producing a semiconductor wafer
10/14/2004	CA2522358A1 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
10/13/2004	EP1467405A1 Method for gettering transition metal impurities in silicon crystal
10/13/2004	EP1466041A1 Coloured diamond
10/13/2004	EP1370498B1 Quartz glass component and method for the production thereof
10/13/2004	CN1536102A Method for synthesizing magnesium salt whiskers
10/12/2004	US6802902 Process for producing an epitaxial layer of gallium nitride
10/12/2004	US6802901 Method of making high purity optical fluoride crystals
10/12/2004	US6802900 Liquid phase growth methods and liquid phase growth apparatus
10/12/2004	US6802899 Silicon single crystal wafer and manufacturing process therefor
10/07/2004	WO2004086520A1 ZnO SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
10/07/2004	WO2004086516A1 Solar cell
10/07/2004	WO2004086489A1 System and method of silicon crystallization
10/07/2004	WO2004086475A1 Substrate treating apparatus and process for producing semiconductor device
10/07/2004	WO2004085718A1 Ferroelectric film
10/07/2004	WO2004040046A9 Method for forming thin film on basic material through intermediate layer
10/07/2004	WO2003029431A3 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus
10/07/2004	US20040197936 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate
10/07/2004	US20040197599 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electric circuit, and electronic apparatus
10/07/2004	US20040195205 Thin film formation method, display, and color filter
10/07/2004	US20040194693 Manufacturing method of silicon carbide single crystals
10/07/2004	US20040194692 Silicon annealed wafer and silicon epitaxial wafer
10/07/2004	US20040194690 Coloured diamond
10/07/2004	US20040194689 High pressure superabrasive particle synthesis
10/06/2004	EP1465242A1 Semiconductor wafer and method for producing the same
10/06/2004	EP1464992A1 Fluoride crystal material for optical device used for photolithographic apparatus and its manufacturing method
10/06/2004	EP1464735A2 Equipment and method for manufacturing silicon carbide single crystal
10/06/2004	EP1464629A2 Method for producing high purity silica crucible by electrolytic refining, crucible and pulling method
10/06/2004	EP1463849A2 Boron doped diamond
10/06/2004	CN1534735A Rectangular nitride semiconductor substrate capable of identifying outside and inside
10/06/2004	CN1170011C Process for preparing zinc oxide whiskers with different forms by using gasification and oxidation method
10/05/2004	USRE38613 Method for growing a nitride compound semiconductor
10/05/2004	US6800552 Deposition of transition metal carbides
10/05/2004	US6800136 Axial gradient transport apparatus and process

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