Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
03/2004
03/10/2004EP1200649B1 Method of manufacturing crystal of silicon using an electric potential
03/10/2004CN1480568A Method for preparing bonding taser crystal in vertical type with weight applied from top
03/10/2004CN1480567A Method and apppts. for controlling oxygen content of reblended antimony or arsenic in silica chip
03/09/2004US6703294 Method for producing a region doped with boron in a SiC-layer
03/09/2004US6703293 Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates
03/09/2004US6703288 Compound crystal and method of manufacturing same
03/09/2004US6702892 Production device for high-quality silicon single crystals
03/09/2004US6702891 Method of heat treating fluoride crystal
03/04/2004WO2004019391A2 Semiconductor heterostructures having reduced dislocation pile-ups and related methods
03/04/2004WO2004019008A1 Methods of searching for crystallization conditions of biopolymer and searching apparatus
03/04/2004WO2004018743A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method
03/04/2004WO2004018742A1 Method of producing silicon monocrystal
03/04/2004WO2003040440A3 Apparatus and method for diamond production
03/04/2004US20040041217 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device
03/04/2004US20040040491 Silicon single crystal wafer for particle monitor
03/03/2004EP1394865A1 Iii group nitride based semiconductor element and method for manufacture thereof
03/03/2004EP1394590A1 Method for growing a calcium fluoride crystal
03/03/2004EP1393352A2 Semiconductor device, semiconductor layer and production method thereof
03/03/2004EP1392895A2 Semi-insulating silicon carbide without vanadium domination
03/03/2004EP1392484A2 High throughput screening of crystalization of materials
03/03/2004CN1140917C Method of making semiconductor structure containing metal oxide interface of silicon
03/02/2004US6700300 Surface acoustic wave device and piezoelectric substrate used therefor
03/02/2004US6700179 Method for growing GaN compound semiconductor crystal and semiconductor substrate
03/02/2004US6699760 Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects
03/02/2004US6699408 Method of making a fluoride crystalline optical lithography lens element blank
02/2004
02/26/2004WO2004016837A1 Crystal production method for gallium oxide-iron mixed crystal
02/26/2004WO2002103753A3 Nanoelectronic interconnection and addressing
02/26/2004US20040038446 Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
02/26/2004US20040035960 Separating mixture of polycrystalline wafers using screens having disks, conveyors and drives; reuse as raw materials
02/26/2004US20040035357 Method for manufacturing terbium aluminum-based paramagnetic garnet single crystal
02/26/2004US20040035353 Manufacturing of organized molecular monolayers and adapted substrate
02/25/2004EP1391544A2 Method for manufacturing terbium aluminium-based paramagnetic garnet single crystal
02/25/2004EP1391542A1 Reforming process of quartz glass crucible
02/25/2004EP1391252A1 Method and apparatus for improving silicon processing efficiency
02/25/2004EP1390355A2 New crystal forms of lamotrigine and processes for their preparations
02/25/2004EP1390296A1 Method for producing highly pure, granular silicon in a fluidised bed
02/25/2004CN1477242A Gypsum whisker, its preparation method and application
02/25/2004CN1477241A Growth methof of magnesium aluminate spinelle crystal
02/25/2004CN1477239A Method for growing compound laser crystal
02/25/2004CN1139678C Single crystal growth method
02/24/2004US6696736 Piezoelectric substrate for surface acoustic wave device, and surface acoustic wave device
02/24/2004US6696034 Method for producing hydrophobic silica fine powder
02/24/2004US6695912 Method for growing laser crystals
02/19/2004WO2004015461A1 Scatter-free uv optical fluoride crystal elements for < 200 nm laser lithography and methods
02/19/2004WO2003091822A3 Method for producing nitrides and uses thereof as fluorescent markers and light-emitting diodes
02/19/2004WO2003083902A3 Thermal production of nanowires
02/19/2004US20040031436 Scatter-free UV optical fluoride crystal elements for <200NM laser lithography and methods
02/19/2004US20040031434 Method of making synthetic gems comprising elements recovered from remains of a species of the kingdom animalia
02/18/2004CN1476047A Preparation method of gamma-LiAl0*/alpha-Al*0*composite base material
02/18/2004CN1475609A Preparation method of smectic chemical metering ratio lithjum niobate chip
02/18/2004CN1475608A Growth method of titanium doped saphire laser crystal
02/18/2004CN1138877C Single crystal drawing device
02/17/2004US6692568 Sputtering a group iii metal in a nitrogen or ammonia environment and depositing it on a growth surface
02/12/2004WO2004013385A1 Method for producing group iii element nitride single crystal and group iii element nitride transparent single crystal prepared thereby
02/12/2004WO2004013384A1 Quartz glass crucible for pulling up silicon single crystal and method for producing the same
02/12/2004US20040029737 Forming film using seed crystal; high temperature superconductivity
02/12/2004US20040025783 Method for producing hydrogen-doped silica powder, hydrogen-doped silica powder obtained from that method for use in a quartz glass crucible
02/12/2004US20040025782 Process for producing low defect density, ideal oxygen precipitating silicon
02/12/2004US20040025781 Preparation of compounds based on phase equilibria of cu-in-se
02/12/2004DE10334513A1 Einkristalle von Silicaten von Seltenerdelementen Single crystals of silicates of rare earth elements
02/11/2004EP1388597A1 METHOD FOR MANUFACTURING ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ZNTE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, AND SEMICONDUCTOR DEVICE
02/11/2004EP1190122B1 Method and apparatus for epitaxially growing a material on a substrate
02/11/2004CN1474029A Multiple crystal diamond cutter of increased anti-impact property
02/11/2004CN1473967A Nd doped withe scandium-strontium-yttrium borate laser crystal and its preparing method and use
02/11/2004CN1473966A Nd doped yttrium-barium borate laser crystal and its preparing method and use
02/11/2004CN1138024C Compound gas injection system and methods
02/10/2004US6689213 Single crystal pulling apparatus
02/10/2004US6689212 Method for growing an α-SiC bulk single crystal
02/10/2004US6689209 Process for preparing low defect density silicon using high growth rates
02/05/2004WO2004012257A1 Method and apparatus for manufacturing net shape semiconductor wafers
02/05/2004WO2004012227A2 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
02/05/2004US20040023471 Thermal production of nanowires
02/05/2004US20040023468 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
02/05/2004US20040021129 For use as scintillator
02/04/2004EP1386979A2 Method of producing polycrystalline thin film and method of producing an oxide superconducting element
02/04/2004EP1386026A1 High resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage
02/04/2004EP1386025A1 A method to produce germanium layers
02/04/2004CN1473214A Method for production of low defect density silicon
02/04/2004CN1473213A Process for preparing low defect density silicon using high growth rates
02/04/2004CN1473212A Method and apparatus for preparing molten silicon melt from polycrystalline silicon charge
02/04/2004CN1472782A Method for preparing electric ferroelectric thick film by liquid phase epitaxy
02/04/2004CN1472370A Magnetic mono crystal with magnetic induced high strain and shape memory effects and preparing method thereof
02/04/2004CN1472369A Preparation of potassium hexatitanate whiskers
02/04/2004CN1472368A Post-treating method and apparatus for rareearth barium-copper superconductive blocks under high pressure oxygen condition
02/04/2004CN1137294C Process for synthesizing yellow cubic borium nitride monocrystal with Mg as catalyst
02/04/2004CN1137293C Molten salt growth method of barium borophosphate monocrystal
02/03/2004US6687448 Method of processing a substrate made of a ferroelectric single crystalline material
01/2004
01/29/2004WO2004009492A2 Diamondoid-based components in nanoscale construction
01/29/2004WO2003063226A3 Oxide layer on a gaas-based semiconductor structure and method of forming the same
01/29/2004WO2003060596A3 Semiconductor liquid crystal composition and methods for making the same
01/29/2004US20040016397 Diamondoid-based components in nanoscale construction
01/29/2004US20040016396 Method for producing semiconductor crystal
01/29/2004DE10218491B3 Verfahren zur Vermeidung der Selbstentzündung von brennbaren Stäuben in Prozessabgasen sowie Vorrichtung zur Durchführung des Verfahrens sowie Siliciumscheibe erhältlich aus diesem Verfahren Procedures to avoid the self-ignition of combustible dusts in process waste gases and apparatus for performing the method and silicon wafer obtained from this procedure
01/28/2004EP1385196A2 Method of producing a Group III nitride semiconductor crystal
01/28/2004EP1384509A2 Protein crystallography hanging drop lid that individually covers each of the wells in a microplate
01/22/2004WO2004008521A1 High-resistance silicon wafer and process for producing the same
01/22/2004WO2004007815A1 Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method
01/22/2004WO2004007814A1 Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor
01/22/2004WO2004007813A1 A method of producing silicon crystals with a cyclical twin structure
01/22/2004US20040011643 Electrode