Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2003
11/04/2003US6641938 An offcut angle of from about 6 to about 10 degrees; superior morphological and material properties.
11/04/2003US6641888 Silicon single crystal, silicon wafer, and epitaxial wafer.
11/04/2003US6641751 Magnetic garnet single crystal and faraday rotator using the same
10/2003
10/30/2003WO2003089698A1 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation
10/30/2003WO2003089697A1 Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer
10/30/2003WO2003089696A1 Dislocation reduction in non-polar gallium nitride thin films
10/30/2003WO2003089695A1 Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
10/30/2003WO2003089694A1 NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
10/30/2003WO2003003072A3 Optical element and manufacturing method therefor
10/30/2003US20030203113 Method for atomic layer deposition (ALD) of silicon oxide film
10/30/2003US20030200915 Production method for InP single crystal and InP single crystal
10/30/2003US20030200914 Diamond film and method for producing the same
10/30/2003US20030200867 Sintering filter in pressure vessel; blasting oxygen
10/29/2003EP1356139A2 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
10/29/2003EP0853690B1 Silicon carbide gemstones
10/29/2003CN1452593A Ultracoarse, monocrystalline tungsten carbide and method for producing same, and hard metal produced therefrom
10/29/2003CN1451789A Process for preparing CdTe nanocrystal with high photoluminescent efficiency by hydrothermal technique
10/29/2003CN1451540A Single crystal oxide conductor-contg. stacked body, exciter and ink-jet head, and mfg. method
10/29/2003CN1125892C Process for preparing nm-class silicon carbonite whisker/fibre
10/29/2003CN1125890C Apparatus and method for nucleotion and deposition of diamond using hot filament DC plasma
10/28/2003US6639247 Semi-insulating silicon carbide without vanadium domination
10/28/2003US6638639 Turbine components comprising thin skins bonded to superalloy substrates
10/28/2003US6638598 Laminates having a buffer layer and cover layer
10/28/2003US6638569 Apparatus and method for coating substrates with vacuum depositable materials
10/28/2003US6638357 Method for revealing agglomerated intrinsic point defects in semiconductor crystals
10/23/2003WO2003087440A1 Silicon carbide single crystal and method for preparation thereof
10/23/2003US20030198837 Comprises sapphire substrate with low temperature nucleation layer as buffer; polarization-induced electric fields have minimal effects
10/23/2003US20030198748 Hydrolysis of metal salt of trifluoroacetic acid
10/23/2003US20030197946 Projection optical system, fabrication method thereof, exposure apparatus and exposure method
10/23/2003US20030197174 Laminate having mono-crystal oxide conductive member on silicon substrate, actuator using such laminate, ink jet head and method for manufacturing such head
10/23/2003US20030196587 Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation
10/23/2003US20030196586 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
10/22/2003EP1354987A1 Silicon carbide single crystal, and method and apparatus for producing the same
10/22/2003EP1354080A2 Apparatus and process for the preparation of low-iron contamination single crystal silicon
10/22/2003EP1153000B1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation
10/22/2003CN1450981A Adhesive composite coating for diamond and diamond-containing materials and method for producing coating
10/22/2003CN1450580A Field emission nano material capable of being used in plane display
10/22/2003CN1450208A Method for growing crystal of lithium aluminate and lithium gallate
10/22/2003CN1449994A Industrial preparation method for silica carbide crystal whisker and micropowder
10/21/2003US6635587 Method for producing czochralski silicon free of agglomerated self-interstitial defects
10/21/2003US6635323 Raw material for production of GaAs crystals
10/16/2003WO2003085367A1 Method for producing the sensing element of an ultra-violet indicator
10/16/2003WO2003084886A1 Spinel substrate and heteroepitaxial growth of iii-v materials thereon
10/16/2003WO2003035945A3 Substrate for epitaxy
10/16/2003WO2002094773A3 Process for the isolation of crystalline imipenem
10/16/2003US20030194828 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenchers, and gallium nitride semiconductor structures fabricated thereby
10/16/2003US20030192470 Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer
10/15/2003EP1218571B1 Process for preparing single crystal silicon having uniform thermal history
10/15/2003CN1448685A Surface modified quartz glass crucible and its modification process
10/15/2003CN1124371C Device for producing high temperature silicon carbide semiconductor material
10/15/2003CN1124370C Method and apparatus for growing oriented whisker arrays
10/14/2003US6632539 Polycrystalline thin film and method for preparing thereof, and superconducting oxide and method for preparation thereof
10/14/2003US6632411 Silicon wafer and method for producing silicon single crystal
10/14/2003US6632280 Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal
10/14/2003US6632278 Low defect density epitaxial wafer and a process for the preparation thereof
10/09/2003WO2003083902A2 Thermal production of nanowires
10/09/2003WO2003083187A1 High pressure high temperature growth of crystalline group iii metal nitrides
10/09/2003US20030188678 Spinel substrate and heteroepitaxial growth of III-V materials thereon
10/08/2003EP1349971A2 Crystal puller and method for growing single crystal semiconductor material
10/08/2003EP1194618B1 Sublimation growth method for an sic monocrystal with growth-pressure heating
10/08/2003CN1447455A Domain controlled piezoelectric monocrystal component and its mfg. method
10/08/2003CN1447448A Semiconductor substrate based on Ôàó family nitride and its mfg. method
10/08/2003CN1447388A Method of mfg. Ôàó-V family compound semiconductor
10/08/2003CN1446947A Method for preparing superconducting block material with thick film being as seed crystal fustion texture
10/08/2003CN1446690A Substrate for electronic device, electronic device, strong dielectric memory, electronic appliance, ink jetting printing head and ink jetting printer
10/08/2003CN1123916C Application of YB2 monocrystal
10/08/2003CN1123655C Super-lattice BaTiO3 material with new structure and multiple performance
10/08/2003CN1123654C Indium-doped barium-titanate material and its prepn. method
10/08/2003CN1123653C Indium-doped strontium titanate material and its prepn. process
10/08/2003CN1123652C Tech for preparing tobemolai stone crystal whisker by water heating of chelate method
10/08/2003CN1123651C Method and appts. for producing silicon carbide by chemical vapour-deposition
10/08/2003CN1123650C Tech for growing Nd-doped dogolinium calcium borate cyrstal by crucible lowering-down process
10/07/2003US6630117 Making a dispersion managing crystal
10/07/2003US6630077 Terbium- or lutetium - containing garnet phosphors and scintillators for detection of high-energy radiation
10/07/2003US6630006 Generating crystal structure of preferential protein; form layouts, obtain protein, incubate in mother liquor solution, allow crystals to form, generate images of cystal drops
10/02/2003WO2003081730A2 Powder metallurgy tungsten crucible for aluminum nitride crystal growth
10/02/2003WO2003081683A1 Semiconductor-nanocrystal/conjugated polymer thin films
10/02/2003WO2003080903A1 LUMINOUS MATERIAL FOR SCINTILLATOR COMPRISING SINGLE CRYSTAL OF Yb MIXED CRYSTAL OXIDE
10/02/2003WO2003052174A3 Boron doped diamond
10/02/2003US20030186493 Method and device for making substrates
10/02/2003US20030186088 Crystal-growth substrate and a zno-containing compound semiconductor device
10/02/2003US20030186028 Epitaxially coated semiconductor wafer and process for producing it
10/02/2003US20030183163 Crystal growing apparatus
10/02/2003US20030183162 Polycrystalline silicon rod and method of processing the same
10/02/2003US20030183160 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device
10/02/2003US20030183159 Process for producing single crystal silicon wafers
10/02/2003US20030183157 Group III nitride based semiconductor substrate and process for manufacture thereof
10/02/2003US20030183155 High pressure high temperature growth of crystalline group III metal nitrides
10/02/2003US20030183154 Liquid-phase growth apparatus and method
10/02/2003CA2479683A1 Semiconductor-nanocrystal/conjugated polymer thin films
10/01/2003EP1349220A2 Domain controlled piezoelectric single crystal and fabrication method therefor
10/01/2003EP1349203A2 A crystal-growth substrate and a ZnO-containing compound semiconductor device
10/01/2003EP1348783A2 a method for regenerating a composite crucible
10/01/2003EP1348782A2 Surface modified quartz glass crucible, and its modification process
10/01/2003EP1348553A1 Board for electronic device, electronic device, ferroelectric memory, electronic apparatus, ink-jet recording head, and ink-jet printer
10/01/2003EP1348048A2 Process for preparing single crystal silicon having improved gate oxide integrity
10/01/2003EP1348047A2 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates
10/01/2003EP1347945A2 Method for quartz crucible fabrication
10/01/2003EP1175519B1 Barium doping of molten silicon for use in crystal growing process
10/01/2003CN1445821A Forming method of ZnO film and ZnO semiconductor layer, semiconductor element and manufacturing method thereof
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