Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
07/2004
07/22/2004US20040140535 Semiconductor device, method of forming epitaxial film, and laser ablation device
07/22/2004US20040140479 Compliant substrate for a heteroepitaxial structure and method for making same
07/22/2004US20040139912 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
07/22/2004US20040139910 Method and apparatus for crystal growth
07/22/2004CA2474909A1 Low-resistance n type semiconductor diamond and process for producing the same
07/21/2004EP1439572A2 Method of manufacturing group III nitride substrate
07/21/2004CN1514047A Preparation method of yttrium aluminium garnet nano-powder
07/21/2004CN1514046A Method of growing near chemical gauge ratio lithium niobate monocrystal using crucible lowering method
07/21/2004CN1158696C Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
07/20/2004US6765244 III nitride film and a III nitride multilayer
07/20/2004US6764871 Method for fabricating a nitride semiconductor device
07/20/2004US6764864 BST on low-loss substrates for frequency agile applications
07/20/2004US6764547 Crystal growth apparatus
07/15/2004WO2004059753A1 Oxide superconducting thin film
07/15/2004WO2004059750A1 Light emitting element device, light receiving element device, optical apparatus, fluoride crystal, process for producing fluoride crystal and crucible
07/15/2004WO2004059048A1 Diamond film-forming silicon and its manufacturing method
07/15/2004WO2004059047A1 Diamond film-forming silicon and its manufacturing method
07/15/2004WO2004042784A8 Stabilized semiconductor nanocrystals
07/15/2004US20040138489 Composition and method for low temperature deposition of silicon-containing films
07/15/2004US20040137732 Process for producing an epitaxial layer of gallium nitride
07/15/2004US20040137730 Method of making packets of nanostructures
07/15/2004US20040137657 Manufacturing methods for semiconductor devices with multiple III-V material layers
07/15/2004US20040136892 crystals which are not larger than 100 microns and are macroscopically faceted single crystals; diamonds
07/15/2004US20040136866 Thin semiconductors ; dielectric substrate
07/15/2004US20040136084 Optical element and manufacturing method therefor
07/15/2004US20040135467 Method of manufacturing thin quartz crystal wafer
07/15/2004US20040134418 SiC substrate and method of manufacturing the same
07/15/2004DE3905626B4 Vorrichtung zur Züchtung von Siliziumkristallen An apparatus for growing silicon crystals
07/15/2004DE10260320A1 In Teilbereichen verglaster SiO2-Formkörper, Verfahren zu seiner Herstellung und Verwendung In partial regions a glazed SiO2 moldings, process for its preparation and use
07/15/2004DE10259588A1 Einkristall aus Silicium und Verfahren zu dessen Herstellung Single crystal of silicon and process for its preparation
07/14/2004EP1437764A1 A compliant substrate for a heteroepitaxy, a heteroepitaxial structure and a method for fabricating a compliant substrate
07/14/2004EP1437427A1 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate
07/14/2004EP1437426A1 Process for producing single crystal structures
07/14/2004EP1436448A1 Low temperature epitaxial growth of quaternary wide bandgap semiconductors
07/14/2004EP1049820B9 Method for epitaxial growth on a substrate
07/14/2004CN1157506C Self-spread high-temp synthesis process for preparing beta-silicon nitride whisker
07/13/2004US6762420 Organic film vapor deposition method and a scintillator panel
07/08/2004US20040132298 Apparatus for fabricating a III-V nitride film
07/08/2004US20040131866 For use as substrate for a semiconductor device
07/08/2004US20040131537 Multilayer ribbon; epitaxial deposits; laser ablation
07/08/2004US20040129961 ferroelectric film comprises ferroelectric layered superlattice comprising strontium bismuth tantalate or strontium bismuth tantalum niobate; large surface area; vapor depositing conformal top electrode layer
07/08/2004US20040129201 Silicon wafer and method for producing silicon single crystal
07/07/2004EP1435668A1 Permanent current switch material and production method therefor
07/07/2004EP1435091A1 Magnetic material structures, devices and methods
07/07/2004EP1435010A1 Photolithographic uv transmitting mixed fluoride crystal
07/07/2004CN1510459A Superspeed photon crystal response tuning method and apparatus thereof
07/07/2004CN1510178A Self excited laser crystal sc-sr-Nd borate and its preparation
07/07/2004CN1510175A Method for producing silicon slice and monocrystalline silicon
07/07/2004CN1510001A Partial-zone glass SiO2 forming article, producing method and use thereof
07/07/2004CN1156893C Epitaxial growth method of semiconductor on substrate with high mismatched lattices
07/07/2004CN1156615C Lanthanum gallium silicate disc and its preparation method
07/06/2004US6759715 Epitaxial base substrate and epitaxial substrate
07/06/2004US6758899 Crystal growth vessel and crystal growth method
07/06/2004US6758898 Growing single crystals based on the principle that a secondary abnormal grain growth occurs at an elevated temperature higher than predermined temperature during heat treatment of polycrystalline barium titanate
07/06/2004CA2270571C Composite article with adherent cvd diamond coating and method of making
07/01/2004WO2004055912A1 Thermoelectric conversion material, thermoelectric conversion device and manufacturing method thereof
07/01/2004WO2004055876A1 Method for preparation of ferroelectric single crystal film structure using deposition method
07/01/2004WO2004055874A1 Method for producing silicon epitaxial wafer
07/01/2004WO2004055249A1 Process for producing single crystal of compound semiconductor and crystal growing apparatus
07/01/2004WO2004055232A2 Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof
07/01/2004WO2004054922A2 Nanostructure, electronic device and method of manufacturing the same
07/01/2004WO2004035877A3 Method and apparatus for crystal growth
07/01/2004WO2003065465A3 Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer
07/01/2004US20040127064 Production method for composite oxide thin film and device therefor and composite oxide film produced thereby
07/01/2004US20040127042 Compound crystal and method of manufacturing same
07/01/2004US20040124427 Apparatus with improved layers of group III-nitride semiconductor
07/01/2004US20040123795 Production apparatus and method of fluoride crystal, and crucible
07/01/2004US20040123794 Method for flattening surface of oxide crystal to ultra high degree
06/2004
06/30/2004EP1434255A2 Apparatus for processing substrate by process solution
06/30/2004EP1432853A2 Process and apparatus for obtaining bulk monocrystalline gallium- containing nitride
06/30/2004EP1375691A9 Aluminum alloy sheet excellent in formability and hardenability during baking of coating and method for production thereof
06/30/2004EP1025288B1 Process for preparing a silicon melt from a polysilicon charge
06/30/2004CN1508844A Method for manufacturing semiconductor device, semeconductor device and electronic product
06/30/2004CN1508843A Substrate locally with mono-crystalline gallium nitride and its preparing method
06/30/2004CN1508299A Silicon monocrystal and its producing method
06/30/2004CN1155993C Fabrication of gallium nitride layers by lateral growth
06/30/2004CN1155744C Method for preparing titanium dioxide photon crystal for purple-light waveband air balloon
06/30/2004CN1155743C Tetragonal conical compound as non-linear optical material and crystal growth
06/30/2004CN1155742C Melt growth process of sodium borophosphate crystal
06/29/2004US6756320 Gallium/gadolinium/arsenic oxides having low defect and current leakage; field effect transistors
06/29/2004US6756238 Domain controlled piezoelectric single crystal and fabrication method therefor
06/29/2004US6756086 Method for the fabrication of a diamond semiconductor
06/29/2004US6755983 Thin film formation method, display, and color filter
06/29/2004US6755911 Crucible made of carbon fiber-reinforced carbon composite material for single crystal pulling apparatus
06/29/2004US6755910 Method for pulling single crystal
06/29/2004US6755909 Method of crystallizing amorphous silicon using a mask
06/24/2004WO2004053929A2 Semiconductor nanocrystal heterostructures
06/24/2004WO2004039731A3 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys
06/24/2004WO2002073244A3 Method of making high repetition rate excimer laser crystal optics and uv<200nm transmitting optical floride crystal
06/24/2004US20040121516 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
06/24/2004US20040119067 Gallium nitride materials and methods
06/24/2004US20040119063 Gallium nitride-based devices and manufacturing process
06/24/2004US20040118338 Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation
06/24/2004US20040118337 Method for growing silicon film, method for manufacturing solar cell, semiconductor substrate, and solar cell
06/24/2004US20040118334 Silicon single crystal, and process for producing it
06/24/2004US20040118208 Using vacuum furnace ; melting sample; measurement vibration cycles; calibration
06/24/2004US20040118158 SiO2 shaped body which has been vitrified in partial areas, process for producing it, and its use
06/23/2004EP1432022A2 Method for manufacturing and transferring a semiconductor film
06/23/2004EP1432015A2 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device
06/23/2004EP1431426A2 Substrate for epitaxial growth