| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 04/13/2004 | US6720846 Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus |
| 04/13/2004 | US6719843 Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
| 04/13/2004 | US6719841 Manufacturing method for high-density magnetic data storage media |
| 04/10/2004 | WO2004034380A2 Bit-wise aluminum oxide optical data storage medium |
| 04/10/2004 | CA2497759A1 Bit-wise optical data storage utilizing aluminum oxide single crystal medium |
| 04/08/2004 | WO2004030046A1 Method of producing lithium tantalate substrate for surface acoustic wave element |
| 04/08/2004 | WO2004029339A1 Terbium paramagnetic garnet single crystal and magneto-optical device |
| 04/08/2004 | WO2003100839A3 Method for epitaxial growth of a gallium nitride film separated from its substrate |
| 04/08/2004 | US20040067647 Method for producing a polycrystalline silicon, polycrystalline silicon and solar cell |
| 04/08/2004 | US20040067386 Laminated film and method forming film |
| 04/08/2004 | US20040065251 Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal |
| 04/08/2004 | US20040065250 Epitaxial silicon wafer |
| 04/08/2004 | DE10340589A1 Production of a calcium fluoride single crystal comprises contacting a calcium fluoride charge with a seed crystal, heating to a temperature sufficient to form a melt, pulling a crystal through a temperature gradient zone, tempering |
| 04/07/2004 | EP1404902A1 High surface quality gan wafer and method of fabricating same |
| 04/07/2004 | EP1200651B1 Seed crystal holder with a lateral border for an sic seed crystal |
| 04/07/2004 | CN1487563A 电子器件基片结构和电子器件 Electronic devices on the substrate structure and electronic devices |
| 04/07/2004 | CN1487127A Massive prepn process of nano beta-Sic crystal whisker |
| 04/07/2004 | CN1487126A Crucible lowering growth technology of Teo2 monocrystal |
| 04/07/2004 | CN1486946A Method for reforming quartz glass crucible |
| 04/06/2004 | US6716796 Polycrystalline thin film and method of producing the same and oxide superconductor and method of producing the same |
| 04/01/2004 | WO2004027844A2 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage |
| 04/01/2004 | WO2004027127A1 Acicular silicon crystal and process for producing the same |
| 04/01/2004 | WO2004027125A1 Crystal base plate and pressing device |
| 04/01/2004 | WO2004027124A1 Thermal shield member of silicon single crystal pulling system |
| 04/01/2004 | WO2004027108A2 Process of controllable synthesis of carbon films with composite structures |
| 04/01/2004 | US20040062708 Process for the synthesis of nanotubes of transition metal dichalcogenides |
| 04/01/2004 | US20040062699 Inorganic oxide and phosphor |
| 04/01/2004 | US20040062696 Method for reducing oxygen component and carbon component in fluoride |
| 04/01/2004 | DE10245848A1 Verfahren zur Herstellung inverser opalartiger Strukturen Process for the production of inverse opaline structures |
| 03/31/2004 | EP1403931A2 Method for growing a silicon film, method for manufacturing a solar cell, semiconductor substrate, and solar cell |
| 03/31/2004 | EP1403911A2 Thin film device and its fabrication method |
| 03/31/2004 | EP1403663A1 Optical member, process for producing the same, and projection aligner |
| 03/31/2004 | EP1403404A1 Single crystal silicon carbide and method for producing the same |
| 03/31/2004 | EP1119653B1 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 03/31/2004 | CN1486582A Energy Pathway Arrangement |
| 03/31/2004 | CN1486374A Process for monitoring the gaseous environment of a crystal puller for semiconductor growth |
| 03/31/2004 | CN1485469A Growth method of near stoichiometric ratio single crystal of lithium niobate |
| 03/31/2004 | CN1485468A Process for preparing column shape nanometer barium fluoride crystal |
| 03/31/2004 | CN1144331C Super lattice quasi-period structure dielectric material and method for preparing the same |
| 03/31/2004 | CN1144064C Method of organic film deposition |
| 03/31/2004 | CN1143822C Process and equipment for purifying silver halide as raw material of optical fibre in reaction chlorine gas |
| 03/30/2004 | US6712904 Device for producing single crystals |
| 03/30/2004 | US6712902 Feed rod for growing magnetic single crystal, magnetic single crystal, and method of producing a magnetic single crystal |
| 03/30/2004 | CA2263333C Improved plasma jet system |
| 03/25/2004 | WO2004025002A1 Method for synthesising diamond with the aid of magnetic monofields |
| 03/25/2004 | WO2004025001A1 Single crystal, single crystal wafer, epitaxial wafer and method of growing single crystal |
| 03/25/2004 | WO2004024998A1 Heater for crystal formation, apparatus for forming crystal and method for forming crystal |
| 03/25/2004 | US20040058155 Corrosion and erosion resistant thin film diamond coating and applications therefor |
| 03/25/2004 | US20040058066 Thin film of metal oxide and a method for preparing it |
| 03/25/2004 | US20040057482 GaN structures having low dislocation density and methods of manufacture |
| 03/25/2004 | US20040056271 Nanostructure filament layouts formed by exposing substrate to gas mixtures to form masks, then selectively etching; print heads; light emitting diodes |
| 03/25/2004 | US20040055669 Nickel alloy; gas turbines; solution heat treatment |
| 03/25/2004 | US20040055525 Potasium ytterbium double wolframate single crystal, optionally doped, procedure for its production and applications |
| 03/24/2004 | EP1399766A2 Optical element and manufacturing method therefor |
| 03/24/2004 | EP1399605A2 Robot for mixing crystallization trial matrices |
| 03/24/2004 | CN1484715A Magnetic field furnace and a method of using the same to manufacture semiconductor substrates |
| 03/24/2004 | CN1483669A Method for adjusting unidimensional nano material direction and shape |
| 03/24/2004 | CN1143364C Fabrication of gallium nitride semiconductor layers by lateral growth from treach sidewalls |
| 03/23/2004 | US6709730 Method of making diamond product and diamond product |
| 03/23/2004 | US6709703 Method for fabricating a III-V nitride film and an apparatus for fabricating the same |
| 03/23/2004 | US6709520 Reactor and method for chemical vapor deposition |
| 03/23/2004 | US6709512 Method of growing a polycrystalline silicon layer, method of growing a single crystal silicon layer and catalytic CVD apparatus |
| 03/18/2004 | WO2004023538A1 Crystal growing method, crystal growing apparatus, beam splitter, and display |
| 03/18/2004 | WO2004023106A1 Microfluidic chip for biomolecule crystallization |
| 03/18/2004 | WO2004022821A1 Coloured diamond |
| 03/18/2004 | WO2003081730A3 Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
| 03/18/2004 | WO2003067672A3 Methods and reactors for forming superconductor layers |
| 03/18/2004 | US20040053767 Electrophoretically redensified sio2 moulded body method for the production and use thereof |
| 03/18/2004 | US20040053515 Apparatus and method for surface finishing a silicon film |
| 03/18/2004 | US20040053432 Method for processing one-dimensional nano-materials |
| 03/18/2004 | US20040050320 Silicon carbide single crystal and method and apparatus for producing the same |
| 03/18/2004 | US20040050318 Calcium fluoride and its manufacture method |
| 03/18/2004 | US20040050099 Reforming process of quartz glass crucible |
| 03/18/2004 | DE10241973A1 Epitaxial growth of an epitaxial material with silicon used in the production of semiconductor components comprises using a material containing nickel, silicon and aluminum |
| 03/18/2004 | CA2498332A1 Microfluidic chip for biomolecule crystallization |
| 03/17/2004 | EP1398401A2 Method for creating diamond |
| 03/17/2004 | EP1397534A2 A method of growing a semiconductor layer |
| 03/17/2004 | EP1397201A1 Reaction vessel for producing samples |
| 03/17/2004 | EP0931176A4 Improved plasma jet system |
| 03/17/2004 | CN1483004A Apparatus and process for the preparation of low-iron contamination single crystal silicon |
| 03/17/2004 | CN1482287A New method of rapid synthesis of basic bitter salt |
| 03/17/2004 | CN1142332C Method for preparing silicon carbide fiber or fabric |
| 03/17/2004 | CN1142330C Vanadate for measuring dislocation density and etching process of doped monocrystal |
| 03/17/2004 | CN1142329C Method for manufacturing potassium hexatitanate crystal whisker |
| 03/17/2004 | CN1142103C Process for synthesizing different crystal form one-dimensional single crystal mangnesium dioxide nano wire |
| 03/16/2004 | US6706119 Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE |
| 03/11/2004 | WO2004020706A1 Lightly doped silicon carbide wafer and use thereof in high power devices |
| 03/11/2004 | WO2004020705A1 Epitaxial wafer and its manufacturing method |
| 03/11/2004 | WO2004020686A2 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices |
| 03/11/2004 | WO2004012257A9 Method and apparatus for manufacturing net shape semiconductor wafers |
| 03/11/2004 | US20040048471 Semiconductor base material and method of manufacturing the material |
| 03/11/2004 | US20040048456 Method of heat treatment of silicon wafer doped with boron |
| 03/11/2004 | US20040048448 Production method of lll nitride compound semiconductor substrate and semiconductor device |
| 03/11/2004 | US20040048426 Integrated circuit including single crystal semiconductor layer on non-crystalline layer |
| 03/11/2004 | US20040046198 Stacked memory cell having diffusion barriers |
| 03/11/2004 | DE19600300B4 Supraleitende Verdrahtung und diese verwendende Halbleitervorrichtung Superconducting wiring and use this semiconductor device |
| 03/11/2004 | DE10239083A1 Device for supplying a process chamber with fluid media comprises a supply line having a supply opening, seals assigned to the supply opening, and tensioning units for tensioning the supply line on a receiver of the process chamber |
| 03/10/2004 | EP1396889A2 Electronic device substrate structure and electronic device |
| 03/10/2004 | EP1396867A1 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and use |
| 03/10/2004 | EP1395588A2 Process for the isolation of crystalline imipenem |