| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 06/23/2005 | US20050133087 photoelectric cells comprising photoactive film disposed between electrodes, comprises nanostructure crystals disposed within polymer matrices chosen from polyarylenevinylenes and polythiophenes |
| 06/23/2005 | US20050132952 Semiconductor alloy with low surface roughness, and method of making the same |
| 06/23/2005 | US20050132950 Method of growing aluminum-containing nitride semiconductor single crystal |
| 06/22/2005 | EP1544328A1 Terbium paramagnetic garnet single crystal and magneto-optical device |
| 06/22/2005 | EP1542869A4 Molecular scale electronic devices |
| 06/22/2005 | EP1542869A2 Molecular scale electronic devices |
| 06/22/2005 | CN1207452C High temperature molten salt reaction process of preparing one-dimensional ordered nano wire and nanotube array |
| 06/22/2005 | CN1207451C Large size strontium borophosphate nonlinear optical crystal and its growth method and use |
| 06/22/2005 | CN1207447C Growing technology of optical grade low corrusion tunnel density quartz crystal |
| 06/21/2005 | US6909165 Obverse/reverse discriminative rectangular nitride semiconductor wafer |
| 06/21/2005 | US6908509 CZ raw material supply method |
| 06/16/2005 | WO2005055247A2 Methods for surface-biaxially-texturing amorphous films |
| 06/16/2005 | WO2005054550A1 Artificial corundum crystal |
| 06/16/2005 | WO2005054549A1 Silicon single crystal manufacturing system, silicon single crystal manufacturing method, and silicon single crystal |
| 06/16/2005 | WO2005054121A2 Nanostructures formed of branched nanowhiskers and methods of producing the same |
| 06/16/2005 | WO2005003414A8 Substrate for thin-film formation, thin-film substrate and light emitting element |
| 06/16/2005 | WO2004084268A3 Epitaxial semiconductor deposition methods and structures |
| 06/16/2005 | US20050130341 Selective synthesis of semiconducting carbon nanotubes |
| 06/16/2005 | US20050129947 Semiconductors; light emitting diodes; salt formation using anion and cation |
| 06/16/2005 | US20050129580 Microfluidic chemical reactor for the manufacture of chemically-produced nanoparticles |
| 06/16/2005 | US20050126665 Titanium-nickel, titanium-cobalt, titanium-aluminum or iron-aluminum alloy; crystals arranged in an identical crystal orientation; improved ductility; useful for achievement of a super-metal |
| 06/16/2005 | US20050126471 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 06/16/2005 | US20050126470 Template and methods for forming photonic crystals |
| 06/16/2005 | DE102004056741A1 Lithium niobate substrate, useful as acoustic surface wave device for mobile telephones, is prepared by heat treating crystalline material at relatively low temperature |
| 06/15/2005 | EP1542269A1 High-resistance silicon wafer and process for producing the same |
| 06/15/2005 | EP1541723A2 Welding method |
| 06/15/2005 | EP1541722A1 Crystal base plate and pressing device |
| 06/15/2005 | EP1541721A1 Method of producing silicon monocrystal |
| 06/15/2005 | EP1540050A1 Lightly doped silicon carbide wafer and use thereof in high power devices |
| 06/15/2005 | EP1540047A1 Oh and h resistant silicon material |
| 06/15/2005 | EP1114793A4 Heterogeneous liquid-phase crystallisation of diamond |
| 06/15/2005 | CN1206392C Method for growing neodymium-doped yttrium vanadate and yttrium vanadate composite laser crystal |
| 06/14/2005 | US6906351 Group III-nitride growth on Si substrate using oxynitride interlayer |
| 06/14/2005 | US6905559 Nickel-base superalloy composition and its use in single-crystal articles |
| 06/14/2005 | US6905533 Filtering and inerting of combustible dusts in the process off-gas |
| 06/14/2005 | CA2197018C Surface acoustic wave device |
| 06/09/2005 | WO2005053121A1 Laser material |
| 06/09/2005 | WO2005053042A1 Method for fabricating gan-based nitride layer |
| 06/09/2005 | WO2005053010A1 Annealed wafer and annealed wafer manufacturing method |
| 06/09/2005 | WO2005053003A2 Method of production of silicon carbide single crystal |
| 06/09/2005 | WO2005052222A1 Growth of dilute nitride compounds |
| 06/09/2005 | WO2005051842A2 Elongated nano-structures and related devices |
| 06/09/2005 | WO2005010227A3 Chemical vapor deposition reactor |
| 06/09/2005 | WO2004094020A3 Crystal growth devices and systems, and methods for using same |
| 06/09/2005 | US20050124712 Process for producing photonic crystals |
| 06/09/2005 | US20050124242 Laminates of a textile material and a polymer film having regions of differing translucency made by selectively compressing regions of the polymer film; breathable and/or waterproof for garments, tents |
| 06/09/2005 | US20050124161 Growth and integration of epitaxial gallium nitride films with silicon-based devices |
| 06/09/2005 | US20050124139 Process of producing multicrystalline silicon substrate and solar cell |
| 06/09/2005 | US20050121693 Boron phosphide-based semiconductor device production method thereof light-emitting diode and boron phosphide-based semiconductor layer |
| 06/09/2005 | US20050120946 Synthesis of colloidal PbS nanocrystals with size tunable NIR emission |
| 06/09/2005 | US20050120945 Quartz crucibles having reduced bubble content and method of making thereof |
| 06/09/2005 | US20050120944 Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same |
| 06/09/2005 | US20050120943 Method and apparatus for growing silicon carbide crystals |
| 06/09/2005 | US20050120942 Method for producing a monocrystalline component, having a complex moulded structure |
| 06/09/2005 | US20050120941 Methods for repair of single crystal superalloys by laser welding and products thereof |
| 06/08/2005 | EP1538243A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method |
| 06/08/2005 | EP1538242A1 Heater for crystal formation, apparatus for forming crystal and method for forming crystal |
| 06/08/2005 | EP1538241A2 Group III nitride crystal, method of its manufacturing, and equipment for manufacturing group III nitride crystal |
| 06/08/2005 | EP1537263A2 Semiconductor nanocrystal heterostructures |
| 06/08/2005 | EP1537259A1 Coloured diamond |
| 06/08/2005 | EP1257684A4 Method and apparatus for chemical vapor deposition of polysilicon |
| 06/08/2005 | CN1625613A Drop tube type granular crystal producing device |
| 06/08/2005 | CN1624211A Large scale in situ preparation method of ternary NaV6O15 single crystal nanometer needle |
| 06/08/2005 | CN1624210A Method of preparing rod, wire and hexagonal shaped C60 monocrystal |
| 06/08/2005 | CN1623894A High purity carbonaceous material and ceramic coated high purity carbonaceous material |
| 06/07/2005 | US6902989 Method for manufacturing gallium nitride (GaN) based single crystalline substrate that include separating from a growth substrate |
| 06/07/2005 | US6902763 Method for depositing nanolaminate thin films on sensitive surfaces |
| 06/07/2005 | US6902618 Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300 mm and its production method |
| 06/07/2005 | US6902616 Method and apparatus for producing semiconductor device |
| 06/02/2005 | WO2005050722A1 DESIGN AND FABRICATION OF 6.1- Å FAMILY SEMICONDUCTOR DEVICES USING SEMI-INSULATING AlSb SUBSTRATE |
| 06/02/2005 | WO2005050709A2 LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME |
| 06/02/2005 | WO2005049898A1 Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit |
| 06/02/2005 | WO2005049897A1 Optical material, optoelectronic part and optoelectronic appliance |
| 06/02/2005 | WO2005049497A1 The synthesis of ordered zirconium titanate |
| 06/02/2005 | US20050118825 Process for producing group III nitride compound semiconductor |
| 06/02/2005 | US20050118752 Method of making substrates for nitride semiconductor devices |
| 06/02/2005 | US20050118739 Production method for compound semiconductor single crystal |
| 06/02/2005 | US20050116242 Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip |
| 06/02/2005 | US20050115492 Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition |
| 06/02/2005 | US20050115490 Preparation of 157NM transmitting barium fluoride crystals with permeable graphite |
| 06/02/2005 | DE10158521B4 In Teilbereichen oder vollständig verglaster SiO2-Formkörper und Verfahren zu seiner Herstellung In partial regions or completely vitrified SiO2-shaped body and process for its preparation |
| 06/02/2005 | CA2546106A1 Vicinal gallium nitride substrate for high quality homoepitaxy |
| 06/02/2005 | CA2544878A1 Large area, uniformly low dislocation density gan substrate and process for making the same |
| 06/01/2005 | EP1536044A1 Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method |
| 06/01/2005 | EP1536043A1 N-type semiconductor diamond producing method and semiconductor diamond |
| 06/01/2005 | EP1535309A1 Radiation detector |
| 06/01/2005 | CN1623220A Crystal manufacturing method |
| 06/01/2005 | CN1623014A CdTe single crystal and CdTe polycrystal, and method for preparation thereof |
| 06/01/2005 | CN1622302A Three buffer layer method for preparing high quality zinc oxide monocrystalline film |
| 06/01/2005 | CN1621579A Self frequency-conversion laser crystal rare earth ion activated rare earth molybdenate |
| 06/01/2005 | CN1621578A Lithium niobate substrate and manufacturing method thereof |
| 06/01/2005 | CN1621577A Method for making near stoichiometric lithium tantalate wafer |
| 06/01/2005 | CN1621576A Growth method of neodymium-doped gadolinium gallium garnet laser crystal |
| 06/01/2005 | CN1621575A Neodymium-doped strontium-yttrium borate laser crystal |
| 06/01/2005 | CN1204598C Preparation method of gamma-LiAl02/alpha-Al203 composite base material |
| 06/01/2005 | CN1204042C Method for preparing nano tube of size and appearance controllable metal copper and its oxides |
| 06/01/2005 | CN1203965C Surface processing method for titanium-doped sapphire crystal laser rod |
| 06/01/2005 | CN1203949C Synthesis for mono-crystal silver nano wire |
| 05/31/2005 | US6900522 Chamfered semiconductor wafer and method of manufacturing the same |
| 05/31/2005 | US6900070 Dislocation reduction in non-polar gallium nitride thin films |