Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
07/2005
07/14/2005WO2005064643A1 NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS
07/14/2005WO2005063621A1 Silicon feedstock for solar cells
07/14/2005US20050153491 Process of forming low-strain(relaxed) silicon geranium crystal layer
07/14/2005US20050153471 Method of manufacturing group-III nitride crystal
07/14/2005US20050152820 High temperature high pressure capsule for processing materials in supercritical fluids
07/14/2005US20050150446 Method for solid-state single crystal growth
07/14/2005US20050150445 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
07/14/2005DE10157453B4 Vorrichtung zum Aufwachsen eines einkristallinen Rohlings Apparatus for growing a single crystal ingot
07/14/2005CA2550921A1 Method for producing a monocrystalline cu(in,ga)se<sb>2</sb> powder, and monograin membrane solar cell containing said powder
07/14/2005CA2547352A1 Method for treating powder particles
07/13/2005EP1553216A2 Method of manufacturing group-III nitride crystal
07/13/2005EP1553215A2 Diamond single crystal composite substrate and method for manufacturing the same
07/13/2005EP1553214A2 Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
07/13/2005EP1551768A1 Process for manufacturing a gallium rich gallium nitride film
07/13/2005CN1639393A Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
07/13/2005CN1639063A Process of producing multicrystalline silicon substrate and solar cell
07/13/2005CN1638044A Method for forming polycrystalline silicon film of polycrystalline silicon tft
07/13/2005CN1638029A Silicon crystallization apparatus and silicon crystallization method thereof
07/13/2005CN1637543A Silicon crystallizing device
07/13/2005CN1637176A Crucible for the growth of silicon crystal and process for the growth of silicon crystal
07/13/2005CN1637175A Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
07/13/2005CN1210446C Method of eliminating compounding defect in HgCdTe material produced via melt growth process
07/13/2005CN1210445C Thick signal crystal diamond layer, its producing method and gemstones produced from the same layer
07/12/2005US6916657 Evaluation method for polycrystalline silicon
07/12/2005US6916370 Quartz glass crucible for pulling up silicon single crystal and method for producing the same
07/07/2005WO2005062091A2 Process for producing photonic crystals by irradiation of a photoreactive material
07/07/2005WO2005061400A1 Method of incorporating a mark in cvd diamond
07/07/2005WO2005061379A2 Template and methods for forming photonic crystals
07/07/2005WO2004111319A3 Sacrificial template method of fabricating a nanotube
07/07/2005US20050148206 Atomic layer deposition using photo-enhanced bond reconfiguration
07/07/2005US20050148162 Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases
07/07/2005US20050148161 Method of preventing surface roughening during hydrogen prebake of SiGe substrates
07/07/2005US20050148108 Manufacturing method of monocrystalline gallium nitride localized substrate
07/07/2005US20050147841 Influence of surface geometry on metal properties
07/07/2005US20050147765 Method for producing particles with diamond structure
07/07/2005US20050145879 Nitride semiconductor wafer and method of processing nitride semiconductor wafer
07/07/2005US20050145601 Structure having a substrate, patterned metal layer and a catalyst island formed on the metal layer, surface of the substrate upon which the metal layer is formed may be oxidized, to support the successful growth of nanotubes on a resulting structure for a reliable electrical connection to the nanotubes
07/07/2005US20050145165 Lithium niobate substrate and method of producing the same
07/07/2005CA2548449A1 Method of incorporating a mark in cvd diamond
07/06/2005EP1551058A1 Annealed wafer and annealed wafer manufacturing method
07/06/2005EP1550745A1 Metal fluoride crystals suitable for UV applications prepared from particles having a small surface area
07/06/2005EP1549786A1 Method for solid-state single crystal growth
07/06/2005EP1549768A1 Microfluidic protein crystallography
07/06/2005EP1255796B1 Scintillator crystals, method for making same, use thereof
07/06/2005CN1636087A Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
07/06/2005CN1635195A Magnetic single crystal with controllable magnetic field and bidirectional shape memory effect and preparing method thereof
07/06/2005CN1635194A Falling crucible method growth process for lead molybdate single crystal
07/06/2005CN1635193A Process for reducing Yb2plus concentration in ytterbium doped calcium fluoride crystal
07/06/2005CN1635192A Sodium and ytterbium doped calcium fluoride laser crystal and growth method thereof
07/06/2005CN1635191A Process for preparing ZnO monocrystal film on gamma-LiAlO2 substrate
07/05/2005US6914012 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same
07/05/2005US6913647 Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon
07/05/2005US6913646 Silicon single crystal wafer and method for producing silicon single crystal
06/2005
06/30/2005WO2005059981A1 Vapor growth device and production method for epitaxial wafer
06/30/2005WO2005059973A2 Controlled growth of gallium nitride nanostructures
06/30/2005US20050142819 Silicon crystallization apparatus and silicon crystallization method thereof
06/30/2005US20050142299 Method for forming polycrystalline silicon film of polycrystalline silicon TFT
06/30/2005US20050139960 III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method
06/30/2005US20050139153 Crucible for the growth of silicon single crystal and process for the growth thereof
06/30/2005US20050139152 Optical lithography fluoride crystal annealing furnace
06/30/2005US20050139151 Silicon crystallizing device
06/30/2005US20050139150 Diamond single crystal composite substrate and method for manufacturing the same
06/30/2005US20050139149 Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor
06/30/2005US20050139147 Method for annealing group IIA metal fluoride crystals
06/30/2005US20050139146 Method for preparing optical fluoride crystals
06/30/2005DE10392918T5 Verfahren zur Herstellung eines Einkristallhalbleiters und Vorrichtung zur Herstellung eines Einkristallhalbleiters A method for producing a semiconductor single crystal and apparatus for manufacturing a semiconductor single crystal
06/30/2005CA2491144A1 Method of synthesizing colloidal nanocrystals
06/29/2005EP1548845A1 Process for treating of powder particles
06/29/2005EP1548807A1 Method for depositing a group III-nitride material on a silicon substrate and device thereof
06/29/2005EP1548431A1 Inorganic nanocrystals with an organic coating and preparation process thereof
06/29/2005EP1548160A1 Method for producing group iii element nitride single crystal and group iii element nitride transparent single crystal prepared thereby
06/29/2005EP1548158A2 Substrate for use in crystallization and method for producing the same
06/29/2005EP1547970A2 Fabrication of Nano-object array
06/29/2005EP1547145A2 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage
06/29/2005EP1546672A1 Microfluidic chip for biomolecule crystallization
06/29/2005EP1546063A1 Method for producing inverse opaline structures
06/29/2005CN1633526A Crystal puller and method for growing single crystal semiconductor material
06/29/2005CN1632187A Process for fluid-tight-free synthesis of gallium arsenide polycrystalline material
06/29/2005CN1632186A Process for non-mask transverse epitaxial growth of high quality gallium nitride
06/29/2005CN1632185A Process for preparing low-temperature phase barium metaborate monocrystalline film through magnetron sputtering
06/29/2005CN1632184A Method for growing chromium, yttrium and aluminium doped garnet crystal
06/29/2005CN1632183A Process for preparing Yb#+[3+] and Cr#+[4+] doped yttrium-aluminium garnet crystal
06/29/2005CN1208504C Continuous oxidation process for crystal pulling apparatus
06/29/2005CN1208265C Apparatus and process for the preparation of low-iron contamination single crystal silicon
06/28/2005US6911080 Evaluation process of reactivity of silica glass with silicon melt and vibration at its surface, and silica glass crucible not causing the surface vibration
06/28/2005US6911056 Method for diffracting crystals formed by submicroliter crystallization experiments
06/28/2005CA2178656C Process for growing an epitaxial film on an oxide surface and product
06/23/2005WO2005057630A2 Manufacturable low-temperature silicon carbide deposition technology
06/23/2005WO2005056887A1 Method for manufacturing garnet single crystal and garnet single crystal manufactured thereby
06/23/2005WO2005056886A1 Quartz crucibles having reduced bubble content and method of making thereof
06/23/2005WO2005056869A1 A method for manufacturing diamond coatings
06/23/2005WO2005056473A1 Carbon polymer
06/23/2005WO2005056290A1 Novel polymer films and textile laminates containing such polymer films
06/23/2005US20050136762 Laminates of a textile material and a polymer film having regions of differing translucency made by selectively compressing regions of the polymer film; breathable and/or waterproof for garments, tents
06/23/2005US20050136627 Method to reduce crystal defects particularly in group III-nitride layers and substrates
06/23/2005US20050136611 Manufacturing device for buried insulating layer type single crystal silicon carbide substrate
06/23/2005US20050136564 Method of laterally growing GaN with indium doping
06/23/2005US20050136250 precipitation of organic or organometallic compounds as crystals on substrates, using surfactants or dispersants within carrier fluids comprising compressed carbon dioxide; depressurization
06/23/2005US20050133812 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby
06/23/2005US20050133798 Nitride semiconductor template for light emitting diode and preparation thereof