| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
|---|
| 05/16/2000 | US6063186 Growth of very uniform silicon carbide epitaxial layers |
| 05/16/2000 | US6063185 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
| 05/11/2000 | WO2000026949A1 Semiconductor wafer and its manufacturing method |
| 05/11/2000 | WO2000026948A1 Semiconductor wafer and vapor growth apparatus |
| 05/11/2000 | WO2000026433A2 Polycrystalline diamond layer with (100) texture |
| 05/11/2000 | DE19851873A1 Verfahren zum Aufwachsen einer kristallinen Struktur A method of growing a crystalline structure |
| 05/10/2000 | EP0830218A4 Structures having enhanced biaxial texture and method of fabricating same |
| 05/09/2000 | US6060119 Compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound tertiarybutylbis-(dimethylamino)phosphine |
| 05/09/2000 | US6060118 Source gas contains at least carbon and hydrogen in such a manner that the ratio of the number of carbon atoms to the total number of molecules of the source gas is 0.5% or less. |
| 05/09/2000 | US6059885 Vapor deposition apparatus and method for forming thin film |
| 05/09/2000 | CA2062014C Method of manufacturing sintered uranium dioxide |
| 05/04/2000 | DE19850346A1 Diamantschicht mit optimierten Oberflächeneigenschaften Diamond film with optimized surface characteristics |
| 05/03/2000 | EP0996767A1 Reflective surface for cvd reactor walls |
| 05/02/2000 | US6056820 Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
| 05/02/2000 | US6055928 Plasma immersion ion processor for fabricating semiconductor integrated circuits |
| 04/27/2000 | WO2000024052A1 Layer processing |
| 04/27/2000 | WO2000024044A1 Wafer support of semiconductor manufacturing system |
| 04/27/2000 | CA2342638A1 Layer processing |
| 04/26/2000 | EP0995340A1 Frequency selected, variable output inductor heater system and method |
| 04/26/2000 | EP0994973A1 Apparatus and method for nucleation and deposition of diamond using hot-filament dc plasma |
| 04/25/2000 | US6053973 Single crystal SiC and a method of producing the same |
| 04/25/2000 | US6053123 Plasma-assisted metallic film deposition |
| 04/20/2000 | WO2000022204A2 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 04/20/2000 | WO2000022203A2 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 04/20/2000 | WO2000022195A2 Production of bulk single crystals of silicon carbide |
| 04/19/2000 | CN1051554C Metalorganic compounds |
| 04/19/2000 | CN1051553C Preparation of metalorganic compounds for growing epitaxial semiconductor layers |
| 04/18/2000 | US6051823 Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition |
| 04/18/2000 | US6051063 Diamond wafer and method of producing a diamond wafer |
| 04/18/2000 | CA2061302C Method of making synthetic diamond film |
| 04/13/2000 | WO2000020900A2 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method |
| 04/13/2000 | WO2000020665A1 Method for producing semiconductor layers |
| 04/13/2000 | WO2000007228A8 Epitaxial growth furnace |
| 04/12/2000 | CN1250587A Model based temperature controller for semiconductor thermal processors |
| 04/12/2000 | CN1250491A Process for preparing polysilicon using exothermic reaction |
| 04/12/2000 | CN1250490A Susceptor designs for silicon carbide thin films |
| 04/11/2000 | US6048813 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
| 04/11/2000 | US6048793 Method and apparatus for thin film growth |
| 04/06/2000 | WO2000019508A1 Silicon carbide deposition method and use as a barrier layer and passivation layer |
| 04/06/2000 | WO2000019498A1 In situ deposition of low k si carbide barrier layer, etch stop, and anti-reflective coating for damascene applications |
| 04/06/2000 | DE19845252A1 Verfahren zur Herstellung von Halbleiterschichten Process for preparing semiconductor layers |
| 04/04/2000 | US6046439 System and method for thermal processing of a semiconductor substrate |
| 04/04/2000 | US6045613 Production of bulk single crystals of silicon carbide |
| 04/04/2000 | US6045612 Growth of bulk single crystals of aluminum nitride |
| 03/29/2000 | EP0989211A1 Process for obtaining diamond layers by gaseous-phase synthesis |
| 03/29/2000 | EP0988407A1 Method for producing coated workpieces, uses and installation for the method |
| 03/28/2000 | US6043460 System and method for thermal processing of a semiconductor substrate |
| 03/28/2000 | US6043450 Method to compensate for non-uniform film growth during chemical vapor deposition |
| 03/28/2000 | US6043140 Method for growing a nitride compound semiconductor |
| 03/28/2000 | US6042652 Atomic layer deposition apparatus for depositing atomic layer on multiple substrates |
| 03/28/2000 | US6042372 Heat treatment apparatus |
| 03/23/2000 | WO2000016384A1 Apparatus for manufacturing semiconductor device and its manufacturing method |
| 03/23/2000 | WO2000016383A1 Method for forming compound semiconductor layer and compound semiconductor device |
| 03/23/2000 | WO2000016380A1 Method and apparatus for cooling substrates |
| 03/23/2000 | WO2000015885A1 Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |
| 03/23/2000 | WO2000015881A2 Gas feeding system for chemical vapor deposition reactor and method of controlling the same |
| 03/23/2000 | WO2000015865A1 Method for growing oxide thin films containing barium and strontium |
| 03/21/2000 | US6040070 Perovskite type ABO3 with surface layer |
| 03/21/2000 | US6039812 Device for epitaxially growing objects and method for such a growth |
| 03/21/2000 | US6039809 Method and apparatus for feeding a gas for epitaxial growth |
| 03/21/2000 | US6039807 Apparatus for moving exhaust tube of barrel reactor |
| 03/21/2000 | US6039803 Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon |
| 03/16/2000 | WO2000014310A1 Device for producing and processing semiconductor substrates |
| 03/15/2000 | EP0985060A1 Secondary edge reflector for horizontal reactor |
| 03/14/2000 | US6037240 Pretreating the substrate, arranging the substrate in a reactor, applying a bias voltage in the form of alternating voltage to the substrate, supplying hydrogen, methane, nitrogen and oxygen gases to the growth substrate |
| 03/14/2000 | US6036773 Configurating substrate to have fast and slow growth surfacesand allowing excess group 3 atoms on fast growth surface tomigrate to slow growth surface, thus achieving monolayer on the fast growth surface |
| 03/09/2000 | WO2000012945A1 Method and apparatus for thermal processing of semiconductor substrates |
| 03/09/2000 | WO2000012785A1 Low-temperature process for forming an epitaxial layer on a semiconductor substrate |
| 03/09/2000 | WO2000012784A1 Method for producing a defect-free monocrystalline silicon carbide layer |
| 03/09/2000 | DE19934336A1 High temperature silicon carbide semiconductor substrate production and treatment apparatus, especially for silicon carbide epitaxy, has a susceptor completely covered by a cover plate and the substrate |
| 03/09/2000 | DE19838945A1 Verfahren zur Herstellung einer defektarmen, einkristallinen Silizium-Carbid-Schicht A process for preparing a low-defect, monocrystalline silicon carbide layer |
| 03/08/2000 | CN1050158C Method and apparatus for treating surface |
| 03/07/2000 | US6033490 Growth of GaN layers on quartz substrates |
| 03/07/2000 | US6033215 Heat treatment apparatus and heat treatment boat |
| 03/07/2000 | US6032611 Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device |
| 03/02/2000 | DE19839363A1 Composition graded material film, especially digital graded molecular beam epitaxy or chemical vapor deposition semiconductor film, is deposited by subdividing the film depth profile into regions of homogeneous preselected composition |
| 03/01/2000 | EP0982763A1 MOVPE growth of III-V compound semiconductor layers |
| 03/01/2000 | EP0982309A2 Volatile organic barium, strontium and calcium compounds and method for the preparation of layered materials with barium, strontium or calcium oxides or fluorides from these compounds |
| 02/29/2000 | US6031211 Zone heating system with feedback control |
| 02/29/2000 | US6030661 Device and a method for epitaxially growing objects by CVD |
| 02/29/2000 | US6030454 Composition and method for forming thin film ferrite layers on a substrate |
| 02/29/2000 | US6030452 Planarized growth of III-V compound |
| 02/22/2000 | US6027569 Gas injection systems for a LPCVD furnace |
| 02/22/2000 | US6027564 Placing a crystallographically oriented target surface of a substrate, including contaminant materials in high pressure and heating the substrate surface to greater than the threshold temperature for forming epitaxial layer |
| 02/22/2000 | US6026764 Apparatus for low pressure chemical vapor deposition |
| 02/17/2000 | WO2000008401A1 Furnace for processing semiconductor wafers |
| 02/17/2000 | WO2000008389A1 Compact external torch assembly for semiconductor processing |
| 02/16/2000 | EP0979882A1 Method of manufacturing a nitride series III-V group compound semiconductor |
| 02/15/2000 | US6024799 Chemical vapor deposition manifold |
| 02/15/2000 | US6024794 Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination |
| 02/10/2000 | WO2000007228A1 Epitaxial growth furnace |
| 02/10/2000 | WO2000007221A2 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
| 02/08/2000 | US6023082 Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material |
| 02/08/2000 | US6022832 Low vacuum vapor process for producing superconductor articles with epitaxial layers |
| 02/08/2000 | US6022811 Method of uniform CVD |
| 02/08/2000 | US6022413 Thin-film vapor deposition apparatus |
| 02/08/2000 | US6022412 Epitaxial reactor, susceptor and gas-flow system |
| 02/03/2000 | WO2000005754A1 Semiconductor thin film and thin film device |
| 02/02/2000 | EP0977245A2 Method for manufacturing carbon-doped compound semiconductors |
| 02/01/2000 | US6021152 Reflective surface for CVD reactor walls |