Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
06/1998
06/30/1998US5772757 Molecular beam epitaxy
06/30/1998US5772736 Device for removing dissolved gas from a liquid
06/24/1998EP0849775A2 Vapor deposition apparatus and vapor deposition method
06/23/1998US5770887 GaN single crystal
06/23/1998US5769951 Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
06/23/1998US5769942 Method for epitaxial growth
06/23/1998US5769628 Furnace exhaust system with regulator
06/17/1998EP0848575A1 Heating device, assembly and method
06/17/1998EP0848414A1 Stress relaxation method of a strained film by fusion of an interfacial layer
06/17/1998EP0848223A1 Vertical heat treatment device
06/17/1998EP0526468B1 Diamond-on-a-substrate for electronic applications
06/16/1998US5767486 Rapid thermal heating apparatus including a plurality of radiant energy sources and a source of processing gas
06/16/1998US5766682 Process for chemical vapor deposition of a liquid raw material
06/16/1998US5766345 Molecular beam epitaxy
06/16/1998US5766343 Lower bandgap, lower resistivity, silicon carbide heteroepitaxial material, and method of making same
06/16/1998CA1339909C Process for selective formation of iii -v group coumpound film
06/11/1998WO1998025090A1 Spherical shaped semiconductor integrated circuit
06/10/1998EP0846792A1 Method of synthesizing diamond
06/10/1998EP0846791A1 Method for growing nitride III-V compound semiconductor layers and method for fabricating a nitride III-V compound semiconductor substrate
06/10/1998EP0751911B1 Aluminium nitride based platelets, process for their preparation and use thereof
06/09/1998US5763291 Preventing hydrogen passivation, forming a cap layer, etching and forming a stripe-shape ridge
06/09/1998US5762715 Segmented substrate for improved ARC-JET diamond deposition
06/09/1998US5762706 Method of forming compound semiconductor device
06/09/1998US5762705 Fabrication method of semiconductor laser by MOVPE
06/09/1998CA2082689C Zinc oxide crystal and method of producing same
06/04/1998WO1998023788A1 Chemical vapor deposition apparatus
06/04/1998DE19752975A1 High quality bismuth-containing oxide thin film growth
06/03/1998EP0845055A1 SEED CRYSTAL FOR GROWING MONOCRYSTALS, USE OF THE SEED CRYSTAL AND PROCESS FOR PRODUCING SiC MONOCRYSTALS OR MONOCRYSTALLINE SiC LAYERS
06/02/1998US5759908 Method for forming SiC-SOI structures
06/02/1998US5759287 Method of purging and passivating a semiconductor processing chamber
06/02/1998US5759281 CVD reactor for uniform heating with radiant heating filaments
06/02/1998US5759263 Arranging the heater to heat the susceptor so that at least a second wall opposite to the first wall receives a higher temperature than the temperature of the first wall to create a temperature gradient; purity; quality
06/02/1998US5759262 Controlled seeding
05/1998
05/28/1998WO1998022638A1 Method for adjusting semiconductor processing equipment
05/27/1998EP0844649A2 A method for boron contamination reduction in IC fabrication
05/27/1998EP0844319A1 Diamond film and process for preparing the same
05/27/1998CN1183020A Zone heating, system with feedback control
05/27/1998CN1182806A Hard carbon coating
05/26/1998US5756225 Single crystal oxide turbine blades
05/26/1998US5755888 Method and apparatus of forming thin films
05/26/1998US5755885 Ultrasonically oscillated container for cavitating storage supply of dimethylaluminum hydride while carrier gas flows through to create starting gas mixture; uniformity, purity
05/26/1998US5755879 Methods for manufacturing substrates to form monocrystalline diamond films by chemical vapor deposition
05/26/1998US5755878 Method for vapor phase growth
05/22/1998WO1998021386A1 Gemstones formed of silicon carbide with diamond coating
05/22/1998CA2271014A1 Gemstones formed of silicon carbide with diamond coating
05/19/1998US5753300 Vapor deposition
05/19/1998US5753038 Method for the growth of industrial crystals
05/14/1998WO1998020524A1 Forming a crystalline semiconductor film on a glass substrate
05/14/1998WO1998020521A1 Device for producing oxidic thin films
05/13/1998EP0840811A2 System and method for thermal processing of a semiconductor substrate
05/13/1998CN1181635A Quantum wires formed on substrate, manufacturing method thereof, and device having quantum wires on substrate
05/12/1998US5751896 Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition
05/12/1998US5751607 Method of sputter deposition simulation by inverse trajectory calculation
05/12/1998US5751026 Epitaxial wafer of gallium arsenide phosphide
05/12/1998US5750434 Dry polishing with chromium oxide or cerium oxide and iron oxide
05/12/1998US5749974 Method of chemical vapor deposition and reactor therefor
05/07/1998WO1998019334A1 Heat treatment apparatus
05/06/1998EP0769210A4 Epitaxial thallium high temperature superconducting films formed via a nucleation layer
05/05/1998US5747362 Method of manufacturing a semiconductor device in which a layer of material is deposited on the surface of a semiconductor wafer from a process gas
05/05/1998US5746834 Method and apparatus for purging barrel reactors
05/05/1998US5746591 Semiconductor furnace for reducing particulates in a quartz tube and boat
04/1998
04/29/1998EP0838865A2 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate
04/28/1998US5744825 Composite structure for an electronic component comprising a growth substrate, a diamond layer, and an intermediate layer therebetween
04/28/1998US5743957 On vapor-deposited platinum substrate
04/28/1998US5743956 Vapor phase growth, uniform heating
04/28/1998US5743643 Rapid thermal heating apparatus and method
04/22/1998EP0837495A1 Vapor phase growth apparatus and vapor phase growth method
04/22/1998EP0836654A1 Process for the preparation of magnesium oxide films using organomagnesium compounds
04/21/1998US5741377 Preparing biaxially textured metal alloy article; superconductors
04/21/1998US5741360 Method of growing a crystal of a compound semiconductor at a low temperature
04/21/1998CA1339827C Crystal articles and method for forming the same
04/15/1998EP0835336A1 A device and a method for epitaxially growing objects by cvd
04/14/1998US5739086 Structures having enhanced biaxial texture and method of fabricating same
04/09/1998WO1998014644A1 A device for epitaxially growing objects and method for such a growth
04/09/1998WO1998014643A1 A device for epitaxially growing objects and method for such a growth
04/07/1998US5736226 Wafer and method of producing a wafer
04/01/1998EP0832407A1 Passive gas substrate thermal conditioning apparatus and method
04/01/1998CN1177655A Method for producing gallium nitride
03/1998
03/31/1998US5733829 Process for the production of silicon carbide or silicon nitride whiskers
03/31/1998US5733369 Method for forming crystal
03/26/1998DE19726766A1 Controlled modification of layer production or crystal growth
03/25/1998EP0830218A1 Structures having enhanced biaxial texture and method of fabricating same
03/24/1998US5731046 Fabrication of diamond and diamond-like carbon coatings
03/24/1998US5730802 Vapor growth apparatus and vapor growth method capable of growing good productivity
03/18/1998EP0829560A2 A susceptor for a gas phase growth apparatus
03/18/1998EP0828867A2 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
03/18/1998CN1176317A Gas injection system for CVD reactors
03/17/1998US5728425 Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films
03/17/1998US5728223 Reactant gas ejector head and thin-film vapor deposition apparatus
03/11/1998EP0828014A2 Hard carbon film
03/10/1998US5726294 Metalorganic chemical vapor deposition method for depositing F-series metal or nitrogen and metal amides for use in MOCVD
03/10/1998US5725673 Semiconductor wafer process chamber with susceptor back coating
03/10/1998US5725659 Solid phase epitaxy reactor, the most cost effective GaAs epitaxial growth technology
03/04/1998EP0826800A1 A method for the heat-treatment of ZnSe crystal
03/04/1998EP0826798A2 Heteroepitaxy cyclic texture growth method for diamond film
03/03/1998US5724145 Optical film thickness measurement method, film formation method, and semiconductor laser fabrication method
03/03/1998US5722184 Porous absorptive grains
02/1998
02/25/1998EP0825637A2 Epitaxial barrel reactor with a cooling system and method of operating it
02/19/1998WO1998002027A3 Method for producing diamond films using a vapour-phase synthesis system
02/17/1998US5718762 Method for vapor-phase growth