Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
05/1997
05/06/1997US5627142 Method of producing composite metal oxide material
05/06/1997US5626908 Method for producing silicon nitride based member coated with film of diamond
05/06/1997US5626456 Transfer device
05/02/1997EP0648215B1 Process for the preparation of trialkyl compounds of group 3a metals
04/1997
04/29/1997US5624720 Process for forming a deposited film by reacting between a gaseous starting material and an oxidizing agent
04/29/1997US5624719 Process for synthesizing diamond in a vapor phase
04/24/1997WO1997008356A3 Modified metalorganic chemical vapor deposition of group III-V thin layers
04/23/1997EP0769210A1 Epitaxial thallium high temperature superconducting films formed via a nucleation layer
04/23/1997EP0769079A1 Apparatus for uniformly heating a substrate
04/23/1997EP0526646B1 Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof
04/22/1997US5622559 Method of preparing compound semiconductor
04/17/1997WO1997013892A1 Improved method for the preparation of nanocrystalline diamond thin films
04/17/1997WO1997013891A1 METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES
04/16/1997CN1147806A Novel silicon carbide dummy wafer
04/15/1997US5620754 Method of treating and coating substrates
04/15/1997US5620557 Sapphireless group III nitride semiconductor and method for making same
04/15/1997US5620512 Diamond film growth from fullerene precursors
04/15/1997US5620511 Adding silicon microparticles and carbon fibers of specific length and diameter as reinforcing agents to an aluminum alkoxide solution, filtering, dehydrating, forming, drying and heating
04/10/1997WO1997013011A1 A device for heat treatment of objects and a method for producing a susceptor
04/08/1997US5618625 CVD diamond coated cutting tools and method of manufacture
04/08/1997US5618350 Processing apparatus
04/02/1997EP0733130A4 Apparatus for heating or cooling wafers
04/02/1997CN1146503A Tail gas recovery method and device in production of silicon carbide fibre
04/01/1997US5616264 Method and apparatus for controlling temperature in rapid heat treatment system
04/01/1997US5616181 MBE apparatus and gas branch piping apparatus
04/01/1997US5616179 Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films
04/01/1997US5616178 Method for growth of II-VI compound semiconductors
04/01/1997US5616024 Apparatuses for heating semiconductor wafers, ceramic heaters and a process for manufacturing the same, a process for manufacturing ceramic articles
03/1997
03/26/1997EP0764726A1 Method for tuning barrel reactor purge system
03/25/1997US5614258 Process of diamond growth from C70
03/25/1997US5614162 Gas phase reaction using aluminum and iron catalyst, carbon fabric substrate
03/25/1997US5614019 Masking, etching, vapor deposition
03/22/1997CA2185981A1 Process for preparing trichlorosilane
03/20/1997DE19522923A1 Mfr. of crystalline, amorphous and epitaxial semiconductor layers on substrate
03/18/1997US5611685 Substrate heat treatment apparatus
03/11/1997US5610094 Photoelectric conversion device
03/06/1997WO1997008361A1 Surface treatment apparatus using gas jet
03/06/1997WO1997008356A2 Modified metalorganic chemical vapor deposition of group iii-v thin layers
03/06/1997WO1997003236A3 System and method for thermal processing of a semiconductor substrate
03/04/1997US5607723 Method for making continuous thin diamond film
03/04/1997US5607511 Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
03/04/1997CA2076334C Ambient-free processing system
02/1997
02/27/1997WO1997007265A1 SEED CRYSTAL FOR GROWING MONOCRYSTALS, USE OF THE SEED CRYSTAL AND PROCESS FOR PRODUCING SiC MONOCRYSTALS OR MONOCRYSTALLINE SiC LAYERS
02/25/1997US5606180 III-V compound semiconductor with high crystal quality and luminous efficiency
02/25/1997US5605574 Semiconductor wafer support apparatus and method
02/20/1997WO1996029441A3 High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition
02/20/1997DE19534922C1 Prodn. of tri:chloro:silane
02/19/1997EP0758310A1 Novel silicon carbide dummy wafer
02/18/1997US5603764 Process for crystal growth of III-V group compound semiconductor
02/12/1997CN1034012C Preparation method for alpha-alumine
02/12/1997CN1034011C Alpha-alumine
02/12/1997CN1034010C Alpha-alumin
02/11/1997US5601651 Flow control valve for use in fabrication of semiconductor devices
02/06/1997WO1997003935A1 Silicon nitride nanowhiskers and method of making same
02/05/1997EP0757117A1 Method and apparatus for deposition of material on a semiconductor wafer
02/05/1997EP0756580A1 Method and apparatus for producing nanostructured ceramic powders and whiskers
02/04/1997US5599732 Covering reactor interior surfaces with stable protective barrier(for impurities) coating before vapor deposition or molecular beam epitaxy
02/04/1997US5599397 Semiconductor wafer process chamber with suspector back coating
01/1997
01/30/1997WO1997003236A2 System and method for thermal processing of a semiconductor substrate
01/29/1997EP0756118A2 Fluid control system and valve to be used therein
01/29/1997CN1141602A Using laser for fabricating coatings substrate
01/28/1997US5597411 Method of forming a single crystal material
01/23/1997WO1997002368A1 Process for the preparation of magnesium oxide films using organomagnesium compounds
01/23/1997DE19606226A1 Vapour phase esp. MOCVD growth appts.
01/22/1997EP0754932A2 Optical film thickness measurement method, film formation method, and semiconductor laser fabrication method
01/22/1997EP0754784A1 Manufacture of transition metal carbide, nitride and carbonitride whiskers containing two or more transition metals
01/22/1997EP0754783A1 Manufacture of transition metal carbide, nitride and carbonitride whiskers
01/22/1997EP0754782A1 Manufacture of titanium carbide, nitride and carbonitride whiskers
01/22/1997EP0754777A2 Process for producing thin film, and optical instrument including the same
01/22/1997CN1140832A Optical film thickness measurement method, film formation method, and semiconductor laser fabrication method
01/21/1997US5595604 Wafer supporting boat
01/16/1997WO1997001658A1 A device and a method for epitaxially growing objects by cvd
01/16/1997WO1996037639A3 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
01/14/1997US5593741 Method and apparatus for forming silicon oxide film by chemical vapor deposition
01/14/1997US5593497 Method for forming a deposited film
01/14/1997US5593465 Mounting for carrier bodies in an apparatus for the deposition of semiconductor material
01/08/1997EP0752018A1 Surface treatment techniques
01/08/1997EP0751911A1 Aluminium nitride based platelets, process for their preparation and use thereof
01/07/1997US5592581 Heat treatment apparatus
01/07/1997US5591260 Method for crystal growth
01/03/1997WO1997000340A1 Titanate whisker and process for the production thereof
01/03/1997WO1997000336A1 Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films
01/02/1997EP0751237A1 Segmented substrate for arc-jet diamond deposition
01/01/1997CN1139460A Epitaxial reactor, susceptor and gas-flow system
12/1996
12/31/1996US5589693 Substrates and methods for gas phase deposition of semiconductors and other materials
12/31/1996US5589421 Method of manufacturing annealed films
12/31/1996US5589110 Container for liquid metal organic compound
12/31/1996US5588994 Method of producing sheets of crystalline material and devices made therefrom
12/31/1996US5588827 Passive gas substrate thermal conditioning apparatus and method
12/27/1996WO1996041906A1 Bulk single crystal gallium nitride and method of making same
12/27/1996EP0749940A1 Process for the preparation of aluminium nitride whiskers
12/24/1996US5587210 Growing and releasing diamonds
12/24/1996US5587124 Method of making synthetic diamond film with reduced bowing
12/24/1996US5587095 Process and apparatus for contamination-free processing of semiconductor parts
12/24/1996US5587019 Apparatus for use in epitaxial crystal growth
12/24/1996US5587014 Method for manufacturing group III-V compound semiconductor crystals
12/24/1996US5586880 Heat treatment apparatus and heat treatment boat
12/20/1996CA2179345A1 Process for producing aluminum nitride trichites
12/19/1996WO1996041109A1 Passive gas substrate thermal conditioning apparatus and method
12/19/1996WO1996041043A1 Carbide nanomaterials