| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 09/13/2001 | US20010020651 Gas injector and gas injection direction adjusting method |
| 09/13/2001 | US20010020439 Method and apparatus for controlling rise and fall of temperature in semiconductor substrates |
| 09/13/2001 | DE10109507A1 Halbleiterherstellungsverfahren und Halbleiterherstellungsgerät A semiconductor manufacturing method and semiconductor manufacturing apparatus |
| 09/13/2001 | DE10104641A1 Halbleiter-Wafer mit einer Punktmarkierung von spezieller Form und Verfahren zum Ausbilden der Punktmarkierung Semiconductor wafer with a point mark of specific shape and method of forming the dot mark |
| 09/12/2001 | EP1132950A1 Wafer support of semiconductor manufacturing system |
| 09/12/2001 | EP1132505A2 Single-crystal silicon carbide |
| 09/12/2001 | EP1132504A1 Thin film depositing process and device, ftir gas analyzer used in the thin film depositing process, and mixed gas supplying device used in the thin film depositing process |
| 09/12/2001 | CN1312585A Semiconductor making method and semiconductor making apparatus |
| 09/11/2001 | US6287710 Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate and a crystalline oxide-on-semiconductor structure |
| 09/07/2001 | WO2001065592A2 Method and device for producing group iii-n, group iii-v-n and metal-nitrogen component structures on si substrates |
| 09/07/2001 | WO2001065590A2 Esrf source for ion plating epitaxial deposition |
| 09/06/2001 | US20010019900 Semiconductor manufacturing method and semiconductor manufacturing apparatus |
| 09/06/2001 | US20010018895 Reactor for manufacturing a semiconductor device |
| 09/06/2001 | DE10105986A1 Semiconductor arrangement used in a solar cell comprises a polycrystalline silicon layer formed by heat treating an amorphous silicon layer in the presence of a metallic catalyst |
| 09/05/2001 | EP1130137A1 Material for raising single crystal sic and method of preparing single crystal sic |
| 09/05/2001 | EP1130135A1 Silicon carbide film and method for manufacturing the same |
| 09/05/2001 | EP1129990A1 Process for controlled growth of carbon nanotubes |
| 09/05/2001 | EP1129240A1 Method for producing semiconductor layers |
| 09/05/2001 | EP1129238A2 Production of bulk single crystals of silicon carbide |
| 09/05/2001 | EP0845055B1 SEED CRYSTAL FOR GROWING MONOCRYSTALS, USE OF THE SEED CRYSTAL AND PROCESS FOR PRODUCING SiC MONOCRYSTALS OR MONOCRYSTALLINE SiC LAYERS |
| 09/05/2001 | CN1311524A Crystal silicon semiconductor device and its mfg. method |
| 09/04/2001 | US6284384 For electronics |
| 09/04/2001 | US6284051 Cooled window |
| 09/04/2001 | US6284048 Method of processing wafers with low mass support |
| 09/04/2001 | US6284042 Such as gallium, aluminum, indium, and boron which is one of iii-v compound semiconductor materials and applicable to light-emitting, cladding, or conductive layers of semiconductor light-emitting elements or devices |
| 09/04/2001 | US6283175 Enveloping device and vertical heat-treating apparatus for semiconductor process system |
| 08/30/2001 | WO2001063650A1 Method for crystalline growth in epitaxial heterostructures based on gallium nitride |
| 08/29/2001 | EP1127176A1 Device for producing and processing semiconductor substrates |
| 08/29/2001 | CN1310861A Semiconductor thin film and thin film device |
| 08/28/2001 | US6281098 Process for Polycrystalline film silicon growth |
| 08/28/2001 | US6280790 Supporting a substrate, heating with radiation adding a purge fluid, reflection and purging |
| 08/28/2001 | US6280183 Substrate support for a thermal processing chamber |
| 08/25/2001 | CA2331278A1 Process for controlled growth of carbon nanotubes |
| 08/23/2001 | US20010016306 Method for purging a furnace and furnace assembly |
| 08/23/2001 | US20010015174 Method and apparatus for manufacturing semiconductor device |
| 08/23/2001 | US20010015168 Optimized silicon wafer gettering for advanced semiconductor devices |
| 08/22/2001 | CN1309776A Method of organic film deposition |
| 08/21/2001 | US6277657 Apparatus for fabricating semiconductor device and fabrication method therefor |
| 08/21/2001 | CA2198588C Formation of a metalorganic compound for growing epitaxial semiconductor layers |
| 08/16/2001 | WO2001059837A1 Integrated circuit |
| 08/16/2001 | WO2001059836A1 Communicating device |
| 08/16/2001 | WO2001059835A1 Semiconductor devices |
| 08/16/2001 | WO2001059822A1 A process for forming a semiconductor structure |
| 08/16/2001 | WO2001059821A1 A process for forming a semiconductor structure |
| 08/16/2001 | WO2001059820A1 Semiconductor structure |
| 08/16/2001 | WO2001059819A1 Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby |
| 08/16/2001 | WO2001059814A2 Semiconductor structure |
| 08/16/2001 | WO2001059186A1 Processing line having means to monitor crystallographic orientation |
| 08/16/2001 | US20010014544 Semiconductor producing apparatus and producing method for epitaxial wafer using same |
| 08/16/2001 | US20010014543 Semiconductor wafer including a dot mark of a peculiar shape and method of forming the dot mark |
| 08/16/2001 | US20010014397 Method for producing a wafer support, used, in particular, in a high-temperature CVD reactor or in a high-temperature CVD process which involves the use of aggressive gases |
| 08/16/2001 | US20010014371 Apparatus for growing thin films |
| 08/16/2001 | US20010013313 Apparatus for fabricating semiconductor structures and method of forming the structures |
| 08/16/2001 | US20010013312 Apparatus for growing thin films |
| 08/16/2001 | EP1123992A2 Semiconductor processing apparatus and method |
| 08/16/2001 | EP1123562A1 Layer processing |
| 08/16/2001 | EP1123560A2 Method for producing a wafer support in a high-temperature cvd reactor |
| 08/16/2001 | DE10006108A1 Process for the epitaxial growth of single crystalline aluminum nitride layers on silicon substrates comprises preparing substrate to form terrace layer, vaporizing an aluminum layer |
| 08/16/2001 | CA2400513A1 Semiconductor devices |
| 08/16/2001 | CA2399394A1 A process for forming a semiconductor structure |
| 08/14/2001 | US6274403 Process for producing heteropitaxial diamond layers on Si-substrates |
| 08/14/2001 | US6274206 Method of coating a silicon or silicide substrate |
| 08/14/2001 | US6274196 Apparatus and method for exchanging an atmosphere of spherical object |
| 08/14/2001 | US6273951 Precursor mixtures for use in preparing layers on substrates |
| 08/14/2001 | US6273949 Method for fabricating orientation-patterned gallium arsenide seeding structures |
| 08/09/2001 | WO2000044966A9 Single-crystal material on non-single-crystalline substrate |
| 08/09/2001 | US20010012678 Method for the formation of semiconductor layer |
| 08/09/2001 | US20010011748 Semiconductor thin film and thin film device |
| 08/09/2001 | US20010011526 Processing chamber for atomic layer deposition processes |
| 08/08/2001 | EP1122341A1 Single crystal SiC |
| 08/08/2001 | EP0970337B1 Method for cooling a furnace, and furnace provided with a cooling device |
| 08/08/2001 | CN1307647A Susceptor for barrel reactor |
| 08/07/2001 | US6270908 Rare earth zirconium oxide buffer layers on metal substrates |
| 08/07/2001 | US6270862 Placing substrate on substrate holder in processing chamber, wherein an interior surface of a dielectric member forming a wall of process chamber faces substrate holder; supplying process gas into chamber; energizing to deposit film |
| 08/07/2001 | US6270571 By depositing a material other than titanium on the surface of a base containing titanium and thermally treating in titanium-oxidation atmosphere; high crystallinity; whiskers; use in photoelectric transducers, photocatalytic devices |
| 08/07/2001 | US6269975 Chemical delivery systems and methods of delivery |
| 08/02/2001 | WO2001055479A1 Apparatus and method for epitaxially processing a substrate |
| 08/02/2001 | US20010010835 Mixing a substance liquid at the room temperature under the atmospheric pressure and a pressurized gas, and causing the resultant mixture to spout as a gas from a nozzle to generate a cluster which is a lumpy group of atoms or molecules |
| 08/01/2001 | EP1120813A1 Reactor for manufacturing of a semiconductor device |
| 08/01/2001 | EP1120475A1 A method and system for MOCVD of PGO films |
| 08/01/2001 | EP1119653A2 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 08/01/2001 | CN1306105A Process for preparing lithium gallate crystal |
| 07/26/2001 | WO2001054175A1 Low threading dislocation density relaxed mismatched epilayers without high temperature growth |
| 07/26/2001 | US20010009141 Susceptor designs for silicon carbide thin films |
| 07/26/2001 | US20010009140 Apparatus for fabrication of thin films |
| 07/26/2001 | US20010009134 GaN system compound semiconductor and method for growing crystal thereof |
| 07/25/2001 | EP1118880A1 Method of organic film deposition |
| 07/25/2001 | EP1118109A1 Silicon carbide deposition method and use as a barrier layer and passivation layer |
| 07/25/2001 | EP1118107A1 In situ deposition of low k si carbide barrier layer, etch stop, and anti-reflective coating for damascene applications |
| 07/25/2001 | EP1118025A2 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method |
| 07/25/2001 | EP1117968A1 Method and apparatus for thermal processing of semiconductor substrates |
| 07/25/2001 | CN1305541A Injector for reactor |
| 07/25/2001 | CN1305024A Process for preparing monocrystal filament of zinc oxide directly from zinc sulfide |
| 07/24/2001 | US6265287 Metal-organic vapor phase epitaxy technique; supplying a group iii source gas containing indium and a group v source gas containing nitrogen; rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas |
| 07/24/2001 | US6265089 Electronic devices grown on off-axis sapphire substrate |
| 07/24/2001 | US6264467 Micro grooved support surface for reducing substrate wear and slip formation |
| 07/19/2001 | US20010008299 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts |
| 07/19/2001 | US20010008285 Method for producing semiconductor and semiconductor laser device |
| 07/18/2001 | EP1116261A1 Method and apparatus for cooling substrates |
| 07/18/2001 | EP1115920A1 Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |