Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
02/2000
02/01/2000US6020253 Decomposition; phosphiding
02/01/2000US6019840 Process for forming deep level impurity undoped phosphorous containing semi-insulating epitaxial layers
02/01/2000US6019839 Method and apparatus for forming an epitaxial titanium silicide film by low pressure chemical vapor deposition
01/2000
01/27/2000WO2000004205A1 High throughput organometallic vapor phase epitaxy (omvpe) apparatus
01/27/2000CA2334349A1 High throughput organometallic vapor phase epitaxy (omvpe) apparatus
01/25/2000US6018065 Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor
01/25/2000US6017774 Method for producing group III-V compound semiconductor and fabricating light emitting device using such semiconductor
01/25/2000US6017395 Gas pressure regulation in vapor deposition
01/20/2000WO2000003056A1 System and method for reducing particles in epitaxial reactors
01/20/2000WO2000002674A1 Cleaning process for rapid thermal processing system
01/19/2000EP0972096A1 Process for preparing polysilicon using exothermic reaction
01/18/2000US6016383 Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
01/18/2000US6015917 Precursors for liquid delivery chemical vapor deposition
01/18/2000US6015590 Surface with thin films on substrate of multilayer element with vapor deposition
01/18/2000US6015459 Method for doping semiconductor materials
01/13/2000WO2000001867A1 Method for synthesizing n-type diamond having low resistance
01/12/2000EP0970337A1 Method for cooling a furnace, and furnace provided with a cooling device
01/12/2000EP0970267A1 Susceptor designs for silicon carbide thin films
01/11/2000US6013319 Method and apparatus for increasing deposition quality of a chemical vapor deposition system
01/11/2000US6013318 Igniting reagent mixture to flame; flowing through plasma torch; coating with thin film metal or metal oxide
01/11/2000US6013238 Heating potassium titante fibers coated with aluminum compound in presence of fusing agent selected form chlorides and sulfates of alkali metals to undergo reaction for growth of crystals and cooling
01/11/2000US6013155 Gas injection system for plasma processing
01/11/2000US6013134 Advance integrated chemical vapor deposition (AICVD) for semiconductor devices
01/11/2000US6013130 Process and device for the production of epitaxial layers
01/11/2000US6013129 Production of heavily-doped silicon
01/06/2000WO2000001005A1 Method for forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device
01/06/2000WO2000000677A1 Method for doping semiconductor materials
01/06/2000WO2000000664A1 Susceptor for barrel reactor
01/06/2000WO2000000663A1 Method and device for displacing wafers in a deposition reactor
01/05/2000CN1240304A GaN monocrystal substrate and making method thereof
01/04/2000US6009831 Apparatus for low pressure chemical vapor deposition
12/1999
12/28/1999US6007635 Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
12/28/1999US6007633 Single-substrate-processing apparatus in semiconductor processing system
12/23/1999WO1999066565A1 Method and apparatus for producing group-iii nitrides
12/23/1999WO1999066351A1 Method of organic film deposition
12/23/1999WO1999066286A1 Ellipsometric method and control device for making a thin-layered component
12/23/1999WO1999065821A1 Free-standing and aligned carbon nanotubes and synthesis thereof
12/23/1999CA2335449A1 Free-standing and aligned carbon nanotubes and synthesis thereof
12/22/1999EP0966047A2 GaN single crystal substrate and method of producing same
12/22/1999CN1239543A Spherical shaped semiconductor integrated circuit
12/21/1999US6004396 Spherical shaped semiconductor integrated circuit
12/21/1999US6004392 Ferroelectric capacitor and manufacturing the same using bismuth layered oxides
12/15/1999EP0964083A2 Method and apparatus for growing a compound semiconductor layer
12/15/1999EP0963458A1 Process for low temperature cvd using bi-carboxylates
12/15/1999CN1238813A Gemstones formed of silicon carbide with diamond coating
12/14/1999US6002109 System and method for thermal processing of a semiconductor substrate
12/14/1999US6001183 Wafer carriers for epitaxial growth processes
12/14/1999US6001175 Crystal producing method and apparatus therefor
12/14/1999US6001174 Method for growing a diamond crystal on a rheotaxy template
12/14/1999US6001172 Apparatus and method for the in-situ generation of dopants
12/14/1999CA2044543C Multi-layer superhard film structure
12/09/1999DE19925430A1 Growing light-emitting thin film electroluminescent component using cerium-doped strontium sulfide
12/08/1999EP0962558A1 A method for producing a single-crystalline film
12/07/1999US5998050 Rare earth (or yttium) barium copper oxide
12/07/1999US5997639 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds
12/07/1999US5997638 Localized lattice-mismatch-accomodation dislocation network epitaxy
12/07/1999US5997589 Adjustment pumping plate design for the chamber of semiconductor equipment
11/1999
11/30/1999US5994676 Method for calibrating the temperature of an epitaxy reactor
11/30/1999US5994158 Controlling gas flow
11/30/1999US5993919 Method of synthesizing diamond
11/30/1999US5993557 Apparatus for growing single-crystalline semiconductor film
11/30/1999US5993555 Apparatus and process for growing silicon epitaxial layer
11/30/1999US5993542 Having an excellent quality with a good crystallographic property and no surface roughness or cracks.
11/30/1999US5993538 Method of forming single-crystalline thin film using beam irradiating method
11/24/1999EP0959151A2 Thin film forming apparatus
11/24/1999EP0959148A2 Method for producing diamond films using a vapour-phase synthesis system
11/24/1999EP0958401A1 Apparatus and method for high density plasma chemical vapor deposition
11/24/1999CN1236481A Forming a crystalline semiconductor film on a glass substrate
11/23/1999US5989511 Smooth diamond films as low friction, long wear surfaces
11/23/1999US5989338 Method for depositing cell nitride with improved step coverage using MOCVD in a wafer deposition system
11/23/1999US5989305 Feeder of a solid organometallic compound
11/23/1999CA2177345C Method for the growth of industrial crystals
11/18/1999WO1999059196A1 Temperature control system for a thermal reactor
11/18/1999WO1999059195A1 Crystal growth method for group-iii nitride and related compound semiconductors
11/17/1999EP0957185A2 Apparatus for fabrication of thin film
11/17/1999EP0956376A1 A susceptor for a device for epitaxially growing objects and such a device
11/17/1999CN1235367A Film forming apparatus and method of forming crystalline silicon film
11/16/1999US5985026 Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers
11/11/1999WO1999057345A1 Functional element for electric, electronic or optical device and method for manufacturing the same
11/11/1999WO1999057343A1 Injector for reactor
11/10/1999EP0954948A1 Model based temperature controller for semiconductor thermal processors
11/10/1999EP0954366A1 Inlet structures for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system
11/09/1999US5982034 Multilayer; strontium, calcium, ruthenium oxide
11/09/1999US5981400 Compliant universal substrate for epitaxial growth
11/09/1999US5980978 Reacting a grignard reagent with a metal halide in an amine solvent
11/09/1999CA2173267C Fluid control system and valve to be used therein
11/03/1999EP0953659A2 Apparatus for thin film growth
11/03/1999EP0644277B1 Process for producing alpha-alumina
11/02/1999US5976957 Evaporating a metal as a catalyst on silicon substrate; heating; oxidation; removal
11/02/1999US5976481 Polycrystal silicon rod and production process therefor
10/1999
10/27/1999EP0951631A1 Spherical shaped semiconductor integrated circuit
10/27/1999EP0828867A4 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
10/26/1999US5972109 Growth of bulk single crystals of aluminum nitride
10/20/1999EP0951077A2 Method for growing nitride compound semiconductor
10/20/1999EP0950132A1 CaTiO 3? INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR
10/19/1999US5970314 Process for vapor phase epitaxy of compound semiconductor
10/19/1999US5970214 Heating device for semiconductor wafers
10/19/1999US5968877 Article comprising substrate sequentially coated with epitaxial buffer layer(s) and high critical temperature (tc) yttrium-barium-copper oxide (ybco) layer
10/19/1999US5968277 Susceptor apparatus for epitaxial deposition and method for reducing slip formation on semiconductor substrates
10/14/1999WO1999051797A1 A method and a device for epitaxial growth of objects by chemical vapour deposition