| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 06/09/1999 | EP0921214A1 Single crystal silicon carbide and process for preparing the same |
| 06/02/1999 | EP0918887A1 Co-rotating edge ring extension for use in a semiconductor processing chamber |
| 06/01/1999 | US5908507 Chemical vapor deposition reactor and method of producing oxide superconductive conductor using the same |
| 06/01/1999 | US5908504 Method for tuning barrel reactor purge system |
| 05/27/1999 | WO1999025909A1 Epitaxial growth furnace |
| 05/26/1999 | EP0918100A1 Method and apparatus for producing homoepitaxial diamond thin film |
| 05/26/1999 | EP0917596A1 Method of manufacturing a semiconductor device and a device for applying such a method |
| 05/26/1999 | CN1217563A Silicon substrate and mfg. method therefor |
| 05/25/1999 | US5906680 Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
| 05/20/1999 | WO1999024635A1 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor |
| 05/19/1999 | EP0916750A1 Single crystal SiC and a method of producing the same |
| 05/19/1999 | EP0916749A1 Single crystal SiC and a method of producing the same |
| 05/19/1999 | EP0916745A1 Two piece diamond deposition mandrel having graphite ring |
| 05/18/1999 | US5904981 Polycrystal silicon rod having an improved morphyology |
| 05/18/1999 | US5904771 Stable evaporation rate |
| 05/18/1999 | US5904769 Epitaxial growth method |
| 05/18/1999 | US5904766 Process for preparing bismuth compounds |
| 05/18/1999 | US5904549 Methods for growing semiconductors and devices thereof from the alloy semiconductor GaInNAs |
| 05/14/1999 | WO1999023693A1 GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
| 05/14/1999 | WO1999023690A1 Method of processing wafers with low mass support |
| 05/12/1999 | EP0915191A2 Apparatus for making a vacuum seal between two bodies made of different materials |
| 05/11/1999 | US5902640 Method of improving field emission characteristics of diamond thin films |
| 05/11/1999 | US5902563 The energies of particles are limited by selecting frequency, pressure, magnetic field and electric bias to the deposition region and chemical vapor depositing the diamond from the plasma source |
| 05/11/1999 | US5902406 Low pressure CVD system |
| 05/11/1999 | US5902396 Charging a reaction vessel with an alkaline earth chalcogenide, with or without transitional metal or halides, an acid mineralizer, anhydrous ammonia, sealing the vessel, heating to form single crystal, cooling and extracting |
| 05/11/1999 | US5902393 Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy |
| 05/11/1999 | US5902103 Vertical furnace of a semiconductor manufacturing apparatus and a boat cover thereof |
| 05/06/1999 | WO1999022403A1 Process and apparatus for preparation of epitaxial silicon layers free of grown-in defects |
| 05/06/1999 | WO1999013499A3 In-situ acceptor activation in group iii-v nitride compound semiconductors |
| 05/06/1999 | DE19727432A1 Growth substrate holder has a heat conductive screen for providing uniform temperature distribution |
| 05/05/1999 | CN1215766A Method for growing diamond crystal on liquid surface |
| 05/04/1999 | US5900177 Furnace sidewall temperature control system |
| 05/04/1999 | US5900056 Method for growing epitaxial layers of III-V compound semiconductors |
| 05/04/1999 | CA2247818A1 Two piece diamond deposition mandrel having graphite ring |
| 04/29/1999 | WO1999021216A1 Method for epitactical production of semi-insulating iii-v compound semiconductors |
| 04/29/1999 | WO1999020816A1 Method for producing a gallium nitride epitaxial layer |
| 04/27/1999 | US5898020 Structures having enhanced biaxial texture and method of fabricating same |
| 04/27/1999 | US5897311 Support boat for objects to be processed |
| 04/22/1999 | WO1999019546A1 Methods for growing defect-free heteroepitaxial layers |
| 04/22/1999 | WO1999019536A1 Introducing process fluid over rotating substrates |
| 04/22/1999 | WO1999019048A1 Semiconductor manufacturing system with getter safety device |
| 04/21/1999 | EP0909835A1 Superhard material film structure, process of making and use of same |
| 04/21/1999 | EP0644279B1 Alpha-alumina |
| 04/21/1999 | EP0644278B1 Alpha-alumina |
| 04/20/1999 | US5895596 Model based temperature controller for semiconductor thermal processors |
| 04/15/1999 | DE19745185A1 Arrangement for vacuum tight joining of two bodies consisting of different materials |
| 04/14/1999 | CN2313934Y Film crystal growth apparatus |
| 04/13/1999 | CA2249703A1 Device for the vacuum-tight connecting of two bodies of different materials |
| 04/08/1999 | WO1999017349A1 Method for producing an open three-dimensional microstructure |
| 04/08/1999 | WO1999016941A1 Substrates for superconductors |
| 04/08/1999 | CA2305571A1 Substrates for superconductors |
| 04/07/1999 | EP0630994B1 Process for vapor-phase diamond synthesis |
| 04/06/1999 | US5892886 Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes |
| 04/06/1999 | US5891575 Growing and releasing diamonds |
| 04/06/1999 | US5891250 Injector for reactor |
| 04/06/1999 | US5891243 Production of heavy doped ZnSe crystal |
| 04/01/1999 | WO1999015719A1 Low vacuum vapor process for producing superconductor articles with epitaxial layers |
| 04/01/1999 | WO1999015718A1 Low vacuum vapor process for producing epitaxial layers |
| 04/01/1999 | WO1999015333A1 Superconductor articles with epitaxial layers |
| 03/31/1999 | EP0905288A1 Process for preparing semiconductor monocrystalline thin film |
| 03/31/1999 | EP0905287A2 Method and apparatus for fabricating compound semiconductor epitaxial wafer by vapour phase growth |
| 03/30/1999 | US5888294 Epitaxial growth rate varying method for side surface of semiconductor pattern |
| 03/25/1999 | WO1999014797A1 Compliant universal substrates for epitaxial growth |
| 03/25/1999 | WO1999014395A1 Process tube with in situ gas preheating |
| 03/24/1999 | EP0903429A2 Process for producing heavily doped silicon |
| 03/23/1999 | US5886203 Metalorganic compounds |
| 03/23/1999 | US5885939 Sputtering a vertically oriented single crystal thin film of yttrium-barium-copper oxide onto horizontally oriented yttrium-barium-copper oxide initially vapor deposited onto single crystal substrate |
| 03/23/1999 | US5885356 Method of reducing residue accumulation in CVD chamber using ceramic lining |
| 03/23/1999 | CA2005737C Manufacturing method of zinc oxide whiskers |
| 03/18/1999 | WO1999013499A2 In-situ acceptor activation in group iii-v nitride compound semiconductors |
| 03/18/1999 | WO1999013129A1 Combustion chemical vapor deposition of phosphate films and coatings |
| 03/18/1999 | DE19739881A1 Production of crystalline silicon carbide |
| 03/18/1999 | CA2302580A1 Combustion chemical vapor deposition of phosphate films and coatings |
| 03/16/1999 | US5882805 Infrared detectors, solar cells and other advanced opto-electronic devices |
| 03/16/1999 | US5882786 Gemstones formed of silicon carbide with diamond coating |
| 03/16/1999 | US5882417 Apparatus for preventing deposition on frontside peripheral region and edge of wafer in chemical vapor deposition apparatus |
| 03/16/1999 | US5882366 Alternating wash/dry water scrubber entry |
| 03/09/1999 | US5879811 Oxide thin film having quartz crystal structure |
| 03/09/1999 | US5879462 Device for heat treatment of objects and a method for producing a susceptor |
| 03/09/1999 | US5879459 Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| 03/09/1999 | US5879450 Method of heteroepitaxial growth of beta silicon carbide on silicon |
| 03/04/1999 | WO1999010558A1 Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| 03/04/1999 | DE19747996C1 Ruthenium-doped semi-insulating III-V compound semiconductor epitaxy |
| 03/02/1999 | US5876684 Methods and apparati for producing fullerenes |
| 03/02/1999 | US5876504 Process for producing oxide thin films and chemical vapor deposition apparatus used therefor |
| 03/02/1999 | CA2061504C Method of forming a single crystal material |
| 02/25/1999 | DE19736207A1 MBE of a p-conductive carbon-doped InGaAs layer on an InP substrate |
| 02/23/1999 | US5874130 Wafer and method of producing a wafer |
| 02/23/1999 | US5874012 Plasma processing apparatus and plasma processing method |
| 02/23/1999 | CA2008946C Vapor-phase epitaxial growth method |
| 02/18/1999 | WO1999007925A1 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures |
| 02/18/1999 | WO1999007924A1 Apparatus and method for the in-situ generation of dopants |
| 02/17/1999 | EP0897192A1 Silicon single crystal and process for producing single-crystal silicon thin film |
| 02/17/1999 | EP0897024A1 Process for epitaxy on a silicon substrate containing zones highly doped with arsenic |
| 02/17/1999 | EP0896643A1 Method and apparatus for growing oriented whisker arrays |
| 02/16/1999 | US5871586 Chemical vapor deposition |
| 02/16/1999 | CA2007388C Method of producing zinc oxide whiskers |
| 02/10/1999 | EP0896406A2 Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor |
| 02/10/1999 | CN1207575A Cubic crystal nitride semiconductor device and its mfg. method |
| 02/09/1999 | US5870526 Inflatable elastomeric element for rapid thermal processing (RTP) system |