| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 04/26/2001 | WO2001029893A1 Method for depositing nanolaminate thin films on sensitive surfaces |
| 04/26/2001 | WO2001029891A1 Conformal lining layers for damascene metallization |
| 04/26/2001 | WO2001029280A1 Deposition of transition metal carbides |
| 04/26/2001 | DE10049257A1 Verfahren zur Dünnfilmerzeugung mittels atomarer Schichtdeposition A process for thin film production by means of atomic layer deposition |
| 04/25/2001 | EP1094502A2 Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing |
| 04/25/2001 | EP1093664A1 Temperature control system for a thermal reactor |
| 04/25/2001 | CN1292750A Tin oxide particles |
| 04/25/2001 | CN1292431A Method for forming film by using atomic layer deposition method |
| 04/25/2001 | CN1065046C Film formation method and semiconductor laser fabrication method |
| 04/24/2001 | US6222990 Heating element for heating the edges of wafers in thermal processing chambers |
| 04/24/2001 | US6222164 Temperature control system for a thermal reactor |
| 04/19/2001 | WO2001027363A1 A device and a method for heat treatment of an object in a susceptor |
| 04/19/2001 | WO2001027361A1 Method and apparatus for growing silicon carbide crystals |
| 04/19/2001 | WO2001027347A1 Method of depositing transition metal nitride thin films |
| 04/19/2001 | WO2001027346A1 Method of modifying source chemicals in an ald process |
| 04/19/2001 | WO2000068472A8 Truncated susceptor for vapor-phase deposition |
| 04/19/2001 | WO2000034999A9 An epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof |
| 04/18/2001 | EP1092233A1 Method of forming a thin film |
| 04/17/2001 | US6218280 High pressure vapor deposition |
| 04/17/2001 | US6218269 Process for producing III-V nitride pn junctions and p-i-n junctions |
| 04/17/2001 | US6218212 Apparatus for growing mixed compound semiconductor and growth method using the same |
| 04/17/2001 | US6217937 Organometallic vapor phase epitaxy; a cold wall reactor; inner wall, central cavity with an open and closed end and a heater, outer wall; space between inner and outer provides a reactor cell with a susceptor rotatably mounted |
| 04/17/2001 | US6217842 Single crystal SIC and method of producing the same |
| 04/17/2001 | US6217662 Susceptor designs for silicon carbide thin films |
| 04/17/2001 | US6217651 Method for correction of thin film growth temperature |
| 04/17/2001 | US6217650 Epitaxial-wafer fabricating process |
| 04/12/2001 | WO2001025511A1 Single step process for epitaxial lateral overgrowth of nitride based materials |
| 04/11/2001 | EP1091422A2 Semiconductor device, semiconductor substrate, and manufacture method |
| 04/11/2001 | EP1089938A1 Free-standing and aligned carbon nanotubes and synthesis thereof |
| 04/11/2001 | CN1290958A Nitride III semiconductor device and its producing method |
| 04/11/2001 | CN1290769A Nanometer silicon film and its preparing process |
| 04/10/2001 | US6215106 Thermally processing a substrate |
| 04/10/2001 | US6214116 For processing gallium nitride based semiconductors; high quality epitaxial growth because no dust is produced |
| 04/05/2001 | WO2001023649A1 Wafer, epitaxial filter, and method of manufacture thereof |
| 04/05/2001 | WO2001023648A1 Apparatus and method for forming single crystalline nitride substrate using hydride vapor phase epitaxy and laser beam |
| 04/05/2001 | WO2000067311A3 Method for producing a wafer support in a high-temperature cvd reactor |
| 04/05/2001 | WO2000022204A9 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 04/04/2001 | EP1089325A2 Support frame for substrates |
| 04/04/2001 | EP1088915A1 Silicon epitaxial wafer and its manufacturing method |
| 04/04/2001 | EP1088914A1 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate |
| 04/04/2001 | CN1289866A Process for growing gallium nitride and its compound film |
| 04/04/2001 | CN1289865A Growth process for monocrystal of gadolinium nitride, substrates of gadolinium mitride monocrystal and manufacture thereof |
| 04/03/2001 | US6211539 Semi-insulated indium phosphide based compositions |
| 04/03/2001 | US6211495 Temperature control system for a thermal reactor |
| 04/03/2001 | US6211042 Growth of epitaxial semiconductor films in presence of reactive metal |
| 04/03/2001 | US6210542 Process for producing thin film, thin film and optical instrument including the same |
| 04/03/2001 | US6209220 Apparatus for cooling substrates |
| 03/29/2001 | WO2001022482A1 Method of producing relaxed silicon germanium layers |
| 03/29/2001 | WO2001021863A1 Patterned carbon nanotubes |
| 03/29/2001 | WO2000033388A9 METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
| 03/28/2001 | EP1086355A1 Ellipsometric method and control device for making a thin-layered component |
| 03/27/2001 | US6208453 Oriented niobate ferroelectric thin films for electrical and optical devices |
| 03/27/2001 | US6207937 Temperature control system for a thermal reactor |
| 03/27/2001 | US6207844 Thin films |
| 03/22/2001 | WO2001020687A1 New methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride, mercury telluride, and cadmium telluride |
| 03/22/2001 | DE19937513A1 Injection pipe for introducing a gas into a process reactor for treating semiconductor substrates has a channel with several lateral gas outlet openings having a uniform small diameter along the channel |
| 03/21/2001 | EP1085107A2 Gas dispersion head and method |
| 03/20/2001 | US6204484 System for measuring the temperature of a semiconductor wafer during thermal processing |
| 03/20/2001 | US6203772 Heat treatment, crystallization, complexing; semiconductors |
| 03/20/2001 | US6203658 Processing system and method for making spherical shaped semiconductor integrated circuits |
| 03/20/2001 | US6203613 Introducing metal nitrate-containing precursor into reactor containing substrate to form metal containing film |
| 03/15/2001 | WO2001018856A1 Wafer holder |
| 03/15/2001 | WO2001018284A1 Method for making a metal part coated with diamond and metal part obtained by said method |
| 03/15/2001 | WO2000044966A8 Single-crystal material on non-single-crystalline substrate |
| 03/15/2001 | DE19943064A1 Process for the epitaxial deposition of atoms or molecules comprises feeding first energy amount by heating the deposition surface, and feeding an ionized inert gas temporarily onto the surface to temporarily introduce second energy amount |
| 03/14/2001 | EP1083161A1 Organometallic compounds for vapor-phase epitaxy of organometal |
| 03/14/2001 | EP1082212A1 Tin oxide particles |
| 03/13/2001 | US6201219 Chamber and cleaning process therefor |
| 03/13/2001 | US6200674 Of single crystalline phase with average diameter on a nanomer scale and having a narrow size distribution; used for transparent electrodes in flat panel displays and in gas sensors |
| 03/13/2001 | US6200652 Method for nucleation and deposition of diamond using hot-filament DC plasma |
| 03/13/2001 | US6200382 Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device |
| 03/08/2001 | DE19941530A1 Manufacturing electronic component with nitride layer using plasma CVD process supplies gas flow at angle to substrate surface, with deposition at specified lower temperatures |
| 03/08/2001 | DE19936905A1 Epitaxial growth of crystal, e.g. hexagonal gallium nitride, on substrate with common type of atom uses lighter substrate with rough or porous surface and thermal decomposition to release common atoms during growth |
| 03/07/2001 | EP1081255A2 A three-dimensional periodic structure and a method for producing the same |
| 03/06/2001 | US6197441 Cubic nitride semiconductor device and fabrication method of the same |
| 03/06/2001 | US6197373 Low pressure chemical vapor deposition furnace |
| 03/06/2001 | US6197121 Chemical vapor deposition apparatus |
| 03/06/2001 | CA2225620C Process for the preparation of magnesium oxide films using organomagnesium compounds |
| 03/01/2001 | WO2001015220A1 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
| 03/01/2001 | WO2001014619A1 Method and device for depositing materials with a large electronic energy gap and high binding energy |
| 02/28/2001 | EP1079007A2 Single crystal SiC composite material for producing a semiconductor device and a method of producing the same |
| 02/27/2001 | US6194691 Heating furnace and manufacturing method therefor |
| 02/27/2001 | US6193506 Apparatus and method for batch thermal conditioning of substrates |
| 02/22/2001 | WO2001013054A1 Hot wall rapid thermal processor |
| 02/22/2001 | WO2001012884A1 p-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND METHOD FOR PREPARATION THEREOF |
| 02/22/2001 | DE19938631A1 Production of thin single crystalline layers or layer system by depositing on a substrate comprises deviating the surface normals from the specified directions of the substrate to produce steps |
| 02/21/2001 | EP1076732A1 Injector for reactor |
| 02/20/2001 | US6191388 Thermal processor and components thereof |
| 02/20/2001 | US6191014 Metalorganic vapor phase growth of p-type semiconductor epitaxial layer doped with carbon using carbon trichloride bromide |
| 02/20/2001 | US6190634 Suitable for electrodes in nanoscale batteries and for high density magnetic recording media; as reinforcements in metal, ceramic, and organic polymer matrix composites |
| 02/20/2001 | US6190460 Apparatus for low pressure chemical vapor depostion |
| 02/20/2001 | US6190457 CVD system and CVD process |
| 02/20/2001 | US6190453 Growth of epitaxial semiconductor material with improved crystallographic properties |
| 02/13/2001 | US6187091 Apparatus and process for growing silicon epitaxial layer |
| 02/13/2001 | US6186779 Wafer clamp for a heater assembly |
| 02/08/2001 | WO2001009412A1 Material for raising single crystal sic and method of preparing single crystal sic |
| 02/07/2001 | CN1283306A GaN signale crystalline substrate and method of producing the same |
| 02/06/2001 | US6184154 Method of processing the backside of a wafer within an epitaxial reactor chamber |
| 02/06/2001 | US6184144 Methods for growing defect-free heteroepitaxial layers |
| 02/06/2001 | US6184049 Method for fabricating compound semiconductor epitaxial wafer and vapor phase growth apparatus using the same |