Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2000
11/14/2000US6146135 Oxide film forming method
11/09/2000WO2000067311A2 Method for producing a wafer support in a high-temperature cvd reactor
11/09/2000WO2000066485A1 Bulk synthesis of long nanotubes of transition metal chalcogenides
11/08/2000EP1049820A1 Method for epitaxial growth on a substrate
11/08/2000EP1049813A1 T proced
11/08/2000EP0946974A4 Forming a crystalline semiconductor film on a glass substrate
11/07/2000US6143072 Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate
11/07/2000US6142773 Enveloping device and vertical heat-treating apparatus for semiconductor process system
11/02/2000EP1049356A2 Heating apparatus for semiconductor wafers or substrates
11/02/2000DE19919902A1 Verfahren zur Herstellung eines Waferträgers, der insbesondere in einem Hochtemperatur-CVD-Reaktor bzw. bei einem Hochtemperatur-CVD-Verfahren unter Einsatz agressiver Gase Verwendung findet A method of manufacturing a wafer carrier, which is used in particular in a high temperature-CVD reactor or in a high-temperature CVD method using aggressive gases
10/2000
10/31/2000US6139628 Method of forming gallium nitride crystal
10/26/2000WO2000063957A1 Method of forming a thin film
10/26/2000WO2000063467A1 Silicon epitaxial wafer and its manufacturing method
10/26/2000WO2000063466A1 Compound gas injection system and methods
10/25/2000EP1046729A1 CVD processing chamber
10/19/2000WO2000061833A1 Sequential chemical vapor deposition
10/19/2000WO2000026433A9 Polycrystalline diamond layer with (100) texture
10/18/2000EP1045432A2 Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon
10/18/2000EP1044291A1 In situ growth of oxide and silicon layers
10/18/2000CN1270420A Semiconductor device made of Group III nitrogenous compounds and manufacture thereof
10/17/2000US6134385 Water free furnace tube with self-heating quartz plug
10/17/2000US6133550 Method and apparatus for thermal processing of semiconductor substrates
10/17/2000US6133152 Co-rotating edge ring extension for use in a semiconductor processing chamber
10/17/2000US6133120 Doping boron as charge acceptor to occupy silicon sites in the silicon carbide crystal lattice
10/17/2000US6132816 Effecting plasma assisted chemical vapor deposition with carbon source and hydrogen gas concentration of mixed gas at first level for depositing high-quality homoepitaxial diamond thin film; depositing with concentration at second level
10/17/2000US6132519 Vapor deposition apparatus and vapor deposition method
10/17/2000US6132512 Vapor-phase film growth apparatus and gas ejection head
10/17/2000US6132506 Method for the heat treatment of ZnSe crystal
10/17/2000CA2177012C Segmented substrate for improved arc-jet diamond deposition
10/12/2000WO2000060146A1 A crystalline oxide-on-semiconductor structure and a generic process for preparing the structure
10/12/2000WO1999066565A9 Method and apparatus for producing group-iii nitrides
10/11/2000EP1043764A1 Semiconductor wafer and its manufacturing method
10/11/2000EP1043763A1 Semiconductor wafer and vapor growth apparatus
10/11/2000EP1043427A1 Semiconductor structure having a crystalline alkaline earth metal oxide interface between silicon and a single crystal oxide layer
10/11/2000EP1043426A1 Method for fabricating a semiconductor structure having a single atomic layer with alkaline earth metal metal, oxygen and silicon at the interface between a silicon substrate and a single crystal oxide layer
10/11/2000EP1042544A1 Growth of very uniform silicon carbide epitaxial layers
10/11/2000EP1042095A1 Substrates for superconductors
10/10/2000US6130143 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate
10/10/2000US6130142 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate
10/10/2000US6129048 Susceptor for barrel reactor
10/10/2000US6129047 Susceptor for vapor-phase growth apparatus
10/10/2000US6129045 Apparatus and method for exchanging an atmosphere of spherical object
10/05/2000WO2000058534A1 N-type semiconductor diamond and its fabrication method
10/05/2000WO2000058533A1 Reaction chamber for an epitaxial reactor
10/05/2000WO2000058245A1 Organometallic compounds for vapor-phase epitaxy of organometal
10/05/2000DE19914502A1 Silicon epitaxial deposition, on silicon substrates in a radiant heated barrel CVD reactor, comprises substrate heating to the maximum temperature without intermediate dwell periods
10/04/2000EP1041610A1 GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME
10/04/2000EP1041609A1 Group III nitride compound semiconductor device and method of producing the same
10/04/2000EP1041171A1 CVD processing chamber
10/03/2000US6126744 Method and system for adjusting semiconductor processing equipment
09/2000
09/28/2000WO2000057460A1 METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE
09/27/2000EP1039514A1 Apparatus for manufacturing semiconductor device and its manufacturing method
09/27/2000EP1039512A2 Method for growing semiconductor film by pulsed chemical vapour deposition
09/27/2000EP1038057A1 Low vacuum vapor process for producing superconductor articles with epitaxial layers
09/27/2000EP1038048A2 Gas feeding system for chemical vapor deposition reactor and method of controlling the same
09/26/2000US6123767 Method and apparatus for feeding a gas for epitaxial growth
09/26/2000US6123766 Method and apparatus for achieving temperature uniformity of a substrate
09/26/2000US6123765 Continuously fed single bubbler for epitaxial deposition of silicon
09/21/2000WO2000055893A1 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
09/21/2000WO2000055398A1 Method of crystal growth, method of forming fine semiconductor structure, semiconductor device, and system
09/21/2000WO2000022195A3 Production of bulk single crystals of silicon carbide
09/21/2000DE10013327A1 Process for growing semiconductor crystals uses an organometallic compound, a molecular compound and diiodomethane to grow a p-doped compound semiconductor crystal
09/20/2000EP1036863A1 Method for synthesizing n-type diamond having low resistance
09/20/2000EP1036407A1 Method of processing wafers with low mass support
09/19/2000US6122439 Rapid thermal heating apparatus and method
09/19/2000US6121647 A perovskite crystalline lead, titanium and a rare earth oxide used in a semiconductor device, e.g., nonvolatile memories; infrared sensors; optical modulators, switches, integrated circuits; reduced leakage; reverse polarity
09/19/2000US6121581 Semiconductor processing system
09/19/2000US6121579 Heating apparatus, and processing apparatus
09/19/2000US6121061 Method of processing wafers with low mass support
09/19/2000US6120607 Apparatus and method for blocking the deposition of oxide on a wafer
09/19/2000US6120285 Dimpled thermal processing furnace and method for processing semiconductor wafers
09/13/2000EP1034325A1 Method for producing a gallium nitride epitaxial layer
09/13/2000EP1034324A1 Low vacuum vapor process for producing epitaxial layers
09/12/2000US6118571 Thin film electro-optic modulator for broadband applications
09/12/2000US6118100 Susceptor hold-down mechanism
09/12/2000US6117750 Chemical vapour depositing a layer of single-crystal germanium on substrate of single crystal silicon using mixture of silicon and germenium precursor gases and maintaining the desired temperature and weight ratios
09/12/2000US6116187 Thin film forming apparatus
09/08/2000WO2000020900A3 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method
09/05/2000US6113984 Gas injection system for CVD reactors
09/05/2000US6113705 High-speed rotational vapor deposition apparatus and high-speed rotational vapor deposition thin film method
09/05/2000US6113700 Gas diffuser having varying thickness and nozzle density for semiconductor device fabrication and reaction furnace with gas diffuser
09/05/2000US6113691 Subjecting substrate to organometallic and hydride precursor compounds in epitaxy reactor at ultra low pressure, whereby organometallic and hydride precursor compounds react at substrate surface without substantial reaction in gas phase
08/2000
08/29/2000US6111284 Ferroelectric thin-film device
08/29/2000US6110809 Reacting first gas source containing an element of nitrogen with second gas containing a group iii metal trichloride and a carrier gas of hydrogen to form a group iii metal nitride
08/29/2000US6110541 Chemical vapor deposition method and apparatus for highly textured diamond film formation
08/29/2000US6110531 Gasifying a generated mist to form a gasified precursor comprising a bismuth-containing organic compound, a metal polyalkoxide compound, a lead-containing organic compound, oxidizing with oxygen gas to form a superlattice thin film
08/29/2000US6110290 Method for epitaxial growth and apparatus for epitaxial growth
08/29/2000US6110289 Rapid thermal processing barrel reactor for processing substrates
08/29/2000US6110286 Vertical processing unit
08/29/2000US6110285 Vertical wafer boat
08/29/2000US6110284 Apparatus and a method for shielding light emanating from a light source heating a semicondutor processing chamber
08/29/2000US6110278 Methods for and products of growth of single-crystal on arrayed nucleation sites (SCANS) defined in nucleation unfriendly substrates
08/29/2000US6110276 Doping diamond with both lithium and boron impurities simultaneously with deposition of diamond on substrate by chemical vapor deposition
08/29/2000US6110275 Mixing titanium compound, carbon powder, halogenide salt and metal catalyst, heating in non-oxidative atmosphere to form whiskers
08/29/2000US6109915 Drafting apparatus
08/29/2000US6108937 Method of cooling wafers
08/23/2000EP1030352A2 Method and apparatus for forming materials layers from atomic gases
08/23/2000EP1029106A1 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor
08/23/2000EP1028797A1 Semiconductor manufacturing system with getter safety device
08/22/2000US6108490 Multizone illuminator for rapid thermal processing with improved spatial resolution
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