| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 01/10/2002 | US20020003239 Semiconductor structure and device including a carbon film and method of forming the same |
| 01/10/2002 | US20020003238 Structure including cubic boron nitride films and method of forming the same |
| 01/10/2002 | US20020002951 Heating installation for a reactor |
| 01/10/2002 | CA2667783A1 A laser diode and method of manufacture of the diode using a surface gallium nitride seed |
| 01/10/2002 | CA2632737A1 A laser diode and method of manufacture of the diode using a surface gallium nitride seed |
| 01/09/2002 | EP0956376B1 A susceptor for a device for epitaxially growing objects and such a device |
| 01/09/2002 | CN1330392A Forming method for silicon based film, silicon based film and photoelectric element |
| 01/09/2002 | CN1077607C Method and device for GaN growth by light radiation-heated metallic organic chemical gas-state deposition |
| 01/08/2002 | US6337991 Temperature sensor comprising single crystal substrate, buffer layer comprising cerium dioxide, yttrium barium copper oxide layer, epitaxial thin film of oxide having perovskite structure which undergoes ferromagnetic phase transition |
| 01/03/2002 | WO2002001648A1 Semiconductor structure, device, circuit, and process |
| 01/03/2002 | WO2002001608A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 01/03/2002 | WO2002000971A1 Silicon epitaxial wafer manufacturing method and silicon epitaxial wafer |
| 01/03/2002 | WO2002000968A1 A method for manufacturing a susceptor, a susceptor thus obtained and its application |
| 01/03/2002 | US20020001974 Atomic layer deposition (ALD) using zirconium tetra-tert-butoxide as a zirconium source material instead of conventional ZrCl4, so resulting film is chlorine-free |
| 01/03/2002 | US20020001953 Method and system for semiconductor crystal production with temperature management |
| 01/03/2002 | US20020001925 Method for manufacturing semiconductor device |
| 01/03/2002 | US20020000584 Semiconductor structure and device including a monocrystalline conducting layer and method for fabricating the same |
| 01/03/2002 | US20020000200 Chemical vapor deposition apparatus |
| 01/03/2002 | US20020000189 Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer |
| 01/02/2002 | EP1167567A1 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| 01/02/2002 | CN1329751A An epitaxial silicon wafer with intrinsic gettering and method for preparation thereof |
| 01/02/2002 | CN1329683A Simulated diamond gemstones formed of aluminum nitride and aluminium nitride silicon carbide alloys |
| 01/01/2002 | US6335268 Plasma immersion ion processor for fabricating semiconductor integrated circuits |
| 01/01/2002 | US6335263 Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials |
| 01/01/2002 | US6334901 Apparatus for forming semiconductor crystal |
| 01/01/2002 | US6334404 Method and apparatus for reducing particle contamination on wafers |
| 12/27/2001 | WO2001099165A1 Method for forming thin film and apparatus for forming thin film |
| 12/27/2001 | WO2001099155A2 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate |
| 12/27/2001 | US20010054377 Method of growing a thin film onto a substrate |
| 12/27/2001 | US20010054375 Method of suppressing convection in a fluid in a cylindrical vessel |
| 12/25/2001 | US6332928 High throughput OMPVE apparatus |
| 12/20/2001 | WO2001096634A1 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 12/20/2001 | WO2001096633A1 Single crystal diamond prepared by cvd |
| 12/20/2001 | US20010053618 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate |
| 12/20/2001 | US20010052517 Thermal processing apparatus |
| 12/20/2001 | US20010052324 Device for producing and processing semiconductor substrates |
| 12/20/2001 | US20010052323 Method and apparatus for forming material layers from atomic gasses |
| 12/20/2001 | US20010052316 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus |
| 12/20/2001 | DE10120295A1 Vapor deposition apparatus for producing stacked layer structure, includes first and second run lines, vent lines, and line-switching mechanism |
| 12/19/2001 | EP1164210A2 A method of growing a semiconductor layer |
| 12/19/2001 | CN1327490A Reaction chamber for an epitaxial reactor |
| 12/19/2001 | CN1327092A Device for producing high temperature silicon carbide semiconductor material |
| 12/18/2001 | US6331208 Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor |
| 12/13/2001 | WO2001095380A1 Preparation method of a coating of gallium nitride |
| 12/13/2001 | WO2001094662A1 Method for preparing a coating on a substrate by ald process using a deuterized reactant |
| 12/13/2001 | US20010051429 High vacuum apparatus for fabricating semiconductor device and method for forming epitaxial layer using the same |
| 12/13/2001 | US20010050054 Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device |
| 12/13/2001 | US20010050039 Method of forming a thin film using atomic layer deposition method |
| 12/12/2001 | EP1162285A2 Method and apparatus for forming diamond film |
| 12/12/2001 | EP0871804B1 Rotatable susceptor with integrated ferromagnetic element |
| 12/12/2001 | EP0730679B1 An epitaxial reactor, susceptor and gas-flow system |
| 12/11/2001 | US6329643 Method of temperature-calibrating heat treating apparatus |
| 12/11/2001 | US6329540 Volatile organogallium compound and deposition of gallium nitride film using same |
| 12/11/2001 | US6329215 Gallium indium aluminum nitrides for semiconductors and metal dopes for p or n junctions |
| 12/11/2001 | US6329088 Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00> |
| 12/11/2001 | US6328796 Single-crystal material on non-single-crystalline substrate |
| 12/11/2001 | US6328561 Method for cooling a furnace, and furnace provided with a cooling device |
| 12/11/2001 | US6328221 Method for controlling a gas injector in a semiconductor processing reactor |
| 12/06/2001 | WO2001092611A1 Method of forming high-quality diamond and device therefor |
| 12/06/2001 | WO2001065592A3 Method and device for producing group iii-n, group iii-v-n and metal-nitrogen component structures on si substrates |
| 12/06/2001 | WO1999013499A8 In-situ acceptor activation in group iii-v nitride compound semiconductors |
| 12/06/2001 | US20010049029 Process control |
| 12/06/2001 | US20010047764 Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
| 12/06/2001 | US20010047751 Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates |
| 12/06/2001 | US20010047750 Apparatus and method for depositing semiconductor film |
| 12/06/2001 | DE10048203A1 Verbundwerkstoff und Verfahren zu seiner Herstellung Composite material and process for its preparation |
| 12/06/2001 | DE10025871A1 Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung Epitaxially coated semiconductor wafer, and processes for their preparation |
| 12/05/2001 | EP1160879A2 Method of forming silicon-based thin film, silicon-based thin film and photovoltaic element |
| 12/05/2001 | EP1160361A1 Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element |
| 12/05/2001 | EP1160360A1 Process for producting an epitaxial layer on a semiconductor wafer |
| 12/05/2001 | EP1160354A1 Apparatus and method for depositing semiconductor film |
| 12/05/2001 | EP1159465A1 Processing chamber for atomic layer deposition processes |
| 12/05/2001 | EP1051535B1 SUBSTRATE SUPPORT FOR SiC EPITAXY AND METHOD FOR PRODUCING AN INSERT FOR A SUSCEPTOR |
| 12/05/2001 | EP0650465B1 Conversion of fullerenes to diamond |
| 12/04/2001 | US6325855 Gas collector for epitaxial reactors |
| 12/04/2001 | US6325850 Method for producing a gallium nitride epitaxial layer |
| 12/04/2001 | US6325848 Method of making a silicon substrate with controlled impurity concentration |
| 12/04/2001 | CA2158568C Method and apparatus for the combustion chemical vapor deposition of films and coatings |
| 11/29/2001 | WO2001090449A1 A method for growing single crystals |
| 11/29/2001 | US20010046754 Process for fabricating semiconductor device |
| 11/29/2001 | US20010046552 Method of manufacturing film structure, method of manufacturing optical waveguide substrate and method of manufacturing second harmonic generation device |
| 11/29/2001 | DE10025346A1 Amorphous and/or polycrystalline growth for a composite semiconductor based comprises growing a first composite semiconductor layer in the gas phase on a substrate |
| 11/28/2001 | EP1158077A1 Method and apparatus for producing single crystal of silicon carbide |
| 11/28/2001 | EP0633997B1 A rapid thermal processing apparatus for processing semiconductor wafers |
| 11/28/2001 | CN1323923A Vacuum system and its control system for growth of semiconductor substrate crystal material |
| 11/28/2001 | CN1075569C Method and apparatus for preparing crystalline films for solid-state lasers |
| 11/27/2001 | US6323140 Method of manufacturing semiconductor wafer |
| 11/27/2001 | US6322713 Nanoscale conductive connectors and method for making same |
| 11/22/2001 | WO2001087772A1 Method and apparatus for production of high purity silicon |
| 11/22/2001 | US20010043903 A three-dimensional faceted diamond crystal having a dopant of a greater concentration near the outer surface than in the center where the concentration is at a minimum of 5 micro-meter below the surface; high compressive fracture |
| 11/22/2001 | US20010042742 Thermal processing apparatus having a coolant passage |
| 11/22/2001 | US20010042505 Precursor mixtures for use in preparing layers on substrates |
| 11/21/2001 | EP0836654B1 Process for the preparation of magnesium oxide films using organomagnesium compounds |
| 11/20/2001 | US6319860 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process |
| 11/20/2001 | US6319764 Method of forming haze-free BST films |
| 11/20/2001 | US6319556 Reflective surface for CVD reactor walls |
| 11/20/2001 | US6319439 Method of synthesizing even diamond film without cracks |
| 11/15/2001 | WO2001086035A1 Epitaxial silicon wafer free from autodoping and backside halo |
| 11/15/2001 | WO2001086034A2 Modified susceptor for use in chemical vapor deposition process |
| 11/15/2001 | WO2001086019A1 Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth |