| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 07/18/2001 | CN1304461A Silicon epitaxial wafer and its manufacturing method |
| 07/18/2001 | CN1303958A Indium-doped strontium titanate material and its preparation method |
| 07/17/2001 | US6262393 Epitaxial growth furnace |
| 07/17/2001 | US6261931 High quality, semi-insulating gallium nitride and method and system for forming same |
| 07/12/2001 | US20010007241 Improved purity silicon wafer for use in advanced semiconductor devices |
| 07/12/2001 | US20010007240 High efficiency silicon wafer optimized for advanced semiconductor devices |
| 07/11/2001 | EP1115145A1 Method for forming compound semiconductor layer and compound semiconductor device |
| 07/11/2001 | EP1114210A1 Low-temperature process for forming an epitaxial layer on a semiconductor substrate |
| 07/11/2001 | EP0865518B1 A device for heat treatment of objects |
| 07/11/2001 | CN2438725Y Oxidation film epitaxial equipment |
| 07/11/2001 | CN1303131A Basis substrate for crystal growth and method for making substrate using same |
| 07/10/2001 | US6258173 Film forming apparatus for forming a crystalline silicon film |
| 07/05/2001 | WO2001048277A1 Method and apparatus for producing single crystal of silicon carbide |
| 07/05/2001 | WO2001004377A8 Seal means and its application in deposition reactor |
| 07/05/2001 | US20010006845 Method and apparatus for producing group-III nitrides |
| 07/05/2001 | US20010006840 Method for growing a compound semiconductor, quantum well structure using the same, and compound semiconductor device including the same |
| 07/05/2001 | US20010006043 A vertical barrel, concentric cylinder design for a cold wall reactor cell which can be converted to a hot wall cell for cleaning the interior of the reactor |
| 07/05/2001 | DE19960823A1 Semiconductor wafer has a rear side and a front side with an epitaxial layer having a specified maximum density of scattered light centers |
| 07/05/2001 | DE10055694A1 Strip-like nickel metal substrate used in the production of a high temperature superconductor consists of very pure nickel which is textured |
| 07/05/2001 | DE10043587A1 Production of a suitable substrate used in high temperature electronic components comprises selecting a substrate made from a single crystalline material, producing a silicon layer and displacing the layer into a relaxed state |
| 07/04/2001 | CN1302082A Method for forming semiconductor layer |
| 07/04/2001 | CN1302080A Method for producing semiconductor structure with metal oxide interface between silicons |
| 07/03/2001 | US6256331 Intermetallic gallium and arsenic that is lattice matched to a multilayer structure which has an active layer for emitting light made of an indium nitride and arsenic phosphide |
| 07/03/2001 | US6254933 Heating semiconductor to create convection between substrate and side walls; crystallizing thin film |
| 07/03/2001 | US6254792 Isotropic dry cleaning process for noble metal integrated circuit structures |
| 07/03/2001 | US6254686 Vented lower liner for heating exhaust gas from a single substrate reactor |
| 07/03/2001 | US6254675 Production of epitactic GaN layers on substrates |
| 06/28/2001 | WO2001047002A2 Pendeoepitaxial gallium nitride layers grown on weak posts |
| 06/28/2001 | WO2001046500A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |
| 06/28/2001 | WO2001046498A2 Chemical vapor deposition reactor and process chamber for said reactor |
| 06/28/2001 | WO2000079570A3 Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 06/28/2001 | WO1999065821A9 Free-standing and aligned carbon nanotubes and synthesis thereof |
| 06/28/2001 | US20010004877 Method and apparatus for producing silicon carbide single crystal |
| 06/28/2001 | CA2395783A1 Pendeoepitaxial gallium nitride layers grown on weak posts |
| 06/28/2001 | CA2329568A1 Apparatus for growing thin films |
| 06/28/2001 | CA2329566A1 Apparatus for growing thin films |
| 06/26/2001 | US6251801 Method and apparatus for manufacturing semiconductor device |
| 06/26/2001 | US6251189 Substrate processing apparatus and substrate processing method |
| 06/26/2001 | US6251183 Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process |
| 06/26/2001 | US6250914 Wafer heating device and method of controlling the same |
| 06/21/2001 | WO1998005807A8 CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR |
| 06/21/2001 | US20010004140 Furnace of apparatus for manufacturing a semiconductor device having a heat blocker for preventing heat loss during the unloading of wafers |
| 06/20/2001 | EP1109208A2 Method for the formation of semiconductor layer |
| 06/20/2001 | CN1067446C Superhigh vacuum chemical vapor phase deposition epitoxy system |
| 06/19/2001 | US6248605 Cerium doped strontium sulfide phosphor thin films from organometallic cerium compound with cyclopentadienyl ligand |
| 06/19/2001 | US6248459 Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon |
| 06/19/2001 | US6248400 Vapor phase diamond synthesis method |
| 06/19/2001 | CA2152769C Synthesizing diamond film |
| 06/14/2001 | WO2001043174A2 Fabrication of gallium nitride layers on textured silicon substrates |
| 06/14/2001 | WO2001042539A1 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites |
| 06/14/2001 | US20010003287 Fluid control apparatus |
| 06/13/2001 | EP1107297A1 Apparatus for manufacturing semiconductor device and method of manufacture thereof |
| 06/13/2001 | EP1107296A2 Method of manufacturing a nitride system III-V compound layer and method of manufacturing a substrate |
| 06/13/2001 | EP1106715A1 Self aligning non contact shadow ring process kit |
| 06/13/2001 | EP1105549A1 High throughput organometallic vapor phase epitaxy (omvpe) apparatus |
| 06/13/2001 | DE10051632A1 Substrate for crystal growth, has base on which crystal system containing separate crystals which are different from epitaxial crystal layer, and epitaxial crystal layer having island-like crystals, are formed |
| 06/12/2001 | US6245647 Method for fabrication of thin film |
| 06/12/2001 | US6245630 Spherical shaped semiconductor integrated circuit |
| 06/12/2001 | US6245152 Method and apparatus for producing epitaxial wafer |
| 06/12/2001 | US6245149 Inert barrier for high purity epitaxial deposition systems |
| 06/12/2001 | US6245144 Doping control in selective area growth (SAG) of InP epitaxy in the fabrication of solid state semiconductor lasers |
| 06/07/2001 | WO2001040541A1 Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide |
| 06/07/2001 | US20010002948 Gas driven rotating susceptor for rapid thermal processing (rtp) system |
| 06/05/2001 | US6243534 Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition |
| 06/05/2001 | US6241821 Fabricating semiconductor structure via forming amorphous silicon dioxide on surface of silicon substrate, providing alkaline earth metal (barium, strontium) on amorphous silicon dioxide, then heating to form interface |
| 05/31/2001 | US20010002026 Chemical delivery systems and methods of delivery |
| 05/31/2001 | US20010001952 Opening and closing of valve means according to a preset open-close time chart and a preset number of cycles; heating; evacuation, continuing evaluation; single crystals; accuracy |
| 05/29/2001 | US6239045 Semiconductor producing apparatus and producing method for epitaxial wafer using same |
| 05/29/2001 | US6238482 Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer |
| 05/29/2001 | US6238478 Silicon single crystal and process for producing single-crystal silicon thin film |
| 05/25/2001 | WO2001036706A1 Exhaust system for vapor deposition reactor |
| 05/24/2001 | US20010001385 Boron-doped isotopic diamond and process for producing the same |
| 05/24/2001 | US20010001384 Silicon epitaxial wafer and production method therefor |
| 05/23/2001 | EP1101842A2 Substrate for epitaxy of III-V compounds and a method for producing the same |
| 05/23/2001 | EP1101841A2 Substrate for epitaxy of III-V compounds and a method for producing the same |
| 05/22/2001 | US6236023 Cleaning process for rapid thermal processing system |
| 05/22/2001 | US6235402 Multilayer |
| 05/17/2001 | WO2001034882A1 Silicon single crystal wafer and production method therefor |
| 05/17/2001 | DE19940033A1 Verfahren und Vorrichtung zum Abscheiden von Schichten auf rotierenden Substraten in einem allseits beheizten Strömungskanal Method and apparatus for depositing layers on rotating substrates in a well-heated flow channel |
| 05/16/2001 | EP1099007A1 Susceptor for barrel reactor |
| 05/16/2001 | CN1295365A Semiconductor device and semoconductor base board and their manufacture |
| 05/15/2001 | US6232580 Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes |
| 05/15/2001 | US6232204 Semiconductor manufacturing system with getter safety device |
| 05/10/2001 | WO2001033616A1 Method and apparatus for thin film deposition |
| 05/10/2001 | WO2001032966A1 Method for producing an initial polycrystalline silicon in the form of plates having a large surface and chamber for the precipitation of silicon |
| 05/10/2001 | DE19954838C1 Process for the epitaxial production of semiconductor nanostructures comprises adding halogens during layer growth and/or during interruptions of the layer growth of the nanostructure and/or the covering layer over |
| 05/09/2001 | EP1097251A1 System and method for reducing particles in epitaxial reactors |
| 05/09/2001 | EP0802988B1 Method of forming diamond-like carbon film (dlc) |
| 05/08/2001 | US6228166 Method for boron contamination reduction in IC fabrication |
| 05/03/2001 | WO2001031700A1 Wafer holder and epitaxial growth device |
| 05/03/2001 | US20010000759 Substrate handling chamber |
| 05/03/2001 | US20010000733 Method of manufacturing nitride system III-V compound layer and method of manufacturing substrate |
| 05/03/2001 | DE10051933A1 Reaction chamber for molding semiconductor wafer, comprises chamber body with chamber for semiconductor wafer, through-holes in wall of chamber body and temperature sensors arranged in through-holes |
| 05/02/2001 | EP1096042A1 Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| 05/02/2001 | CN1293722A Apparatus for moving exhaust tube of barrel reactor |
| 05/02/2001 | CN1293265A Precursor deposited atom layer containing nitrate |
| 05/01/2001 | US6225602 Vertical furnace for the treatment of semiconductor substrates |
| 05/01/2001 | US6224950 Method for formation of thin film |
| 05/01/2001 | US6224669 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon |
| 05/01/2001 | CA2210033C A method of suppressing convection in a fluid in a cylindrical vessel |