C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2001
11/15/2001	WO2001059821A8 A process for forming a semiconductor structure
11/15/2001	WO2001059820A8 Semiconductor structure
11/15/2001	WO2000000663A9 Method and device for displacing wafers in a deposition reactor
11/15/2001	US20010041250 Graded thin films
11/15/2001	US20010039917 Silicon epitaxial wafer and production method therefor
11/14/2001	EP1154049A1 Method of manufacturing single-crystal silicon carbide
11/14/2001	EP1154039A1 A rapid thermal processing apparatus for processing semiconductor wafers
11/13/2001	US6316754 Frequency selected, variable output inductor heater system
11/13/2001	US6316361 CVD reactor and process for producing an epitally coated semiconductor wafer
11/13/2001	US6316098 Molecular layer epitaxy method and compositions
11/08/2001	US20010037761 Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof
11/08/2001	US20010037760 Epitaxial film produced by sequential hydride vapor phase epitaxy
11/07/2001	EP1152074A1 Silicon single crystal wafer and production method therefor
11/07/2001	EP1151155A1 Cdv method of and reactor for silicon carbide monocrystal growth
11/07/2001	CN1321333A Wafer holder
11/06/2001	US6313017 Plasma enhanced CVD process for rapidly growing semiconductor films
11/06/2001	US6312816 A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
11/01/2001	US20010036434 Single crystal silicon layer, its epitaxial growth method and semiconductor device
11/01/2001	US20010035530 Vapor phase deposition system
10/2001
10/31/2001	EP1149192A1 Manufacture of transition metal carbide and carbonitride whiskers with low residual amounts of oxygen and intermediate oxide phases
10/31/2001	EP1149184A1 Method and system for producing semiconductor crystals using temperature management
10/30/2001	US6310327 Rapid thermal processing apparatus for processing semiconductor wafers
10/30/2001	US6309459 Compound semiconductor element and its manufacturing method
10/30/2001	US6309458 Method for fabricating silicon thin film
10/30/2001	US6308738 Drafting apparatus
10/25/2001	WO2001080311A1 Defect reduction in gan and related materials
10/25/2001	US20010032589 Film forming apparatus and method of forming a crystalline silicon film
10/25/2001	US20010032588 Semiconductor film deposition apparatus
10/25/2001	US20010032581 Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof
10/24/2001	EP1148152A2 Chemical vapor deposition apparatus
10/24/2001	EP1148150A2 Method and apparatus for processing semiconductor substrates with hydroxyl radicals
10/23/2001	US6306739 Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom
10/23/2001	US6306735 Method for producing a semiconductor wafer
10/23/2001	US6306734 Method and apparatus for growing oriented whisker arrays
10/23/2001	US6306216 Apparatus for deposition of thin films on wafers through atomic layer epitaxial process
10/23/2001	US6306211 Method for growing semiconductor film and method for fabricating semiconductor device
10/23/2001	CA2113336C Compound semi-conductors and controlled doping thereof
10/18/2001	WO2001077421A1 Method for growing semiconductor crystalline materials containing nitrogen
10/18/2001	US20010031385 Group III-V compound semiconductor and method of producing the same
10/18/2001	US20010030291 Organic film vapor deposition method and a scintillator panel
10/18/2001	US20010029884 Method for producing a single-crystalline film
10/18/2001	DE10015371A1 Production of an epitaxial layer on a single crystalline substrate comprises heating a purified substrate in an epitaxy device while introducing organometallic precursors and a nitrogen-containing gas at a specified flow rate
10/17/2001	EP1144737A2 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy
10/17/2001	EP1144719A2 Polycrystalline diamond layer with optimized surface properties
10/11/2001	WO2001075188A2 Method of and apparatus for gas injection
10/11/2001	US20010029108 Substrate processeing apparatus, substrate processing method and electronic device manufacturing method
10/11/2001	US20010028924 Sequential chemical vapor deposition
10/11/2001	US20010027744 In-situ post epitaxial treatment process
10/11/2001	DE10016971A1 Process for coating and/or treating a surface of a substrate used in the production of semiconductor elements such as thin layer solar cells comprises bombarding the surface
10/10/2001	EP1143047A1 Wafer, epitaxial filter, and method of manufacture thereof
10/10/2001	EP1143043A1 Method of manufacturing film structure, method of manufacturing optical waveguide substrate and method of manufacturing second harmonic generation device
10/10/2001	EP1143036A2 Apparatus and method for controlling the temperature of a wall of a reaction chamber
10/10/2001	EP1143035A2 Apparatus and method for controlling the temperature of a wall of a reaction chamber
10/10/2001	EP1143034A1 Method and apparatus for coating or treatment of a substrate
10/10/2001	EP1143033A2 Silicon carbide and method for producing the same
10/10/2001	EP1142010A2 Epitaxial silicon wafer with intrinsic gettering and method for the preparation thereof
10/10/2001	EP0970267B1 Susceptor designs for silicon carbide thin films
10/10/2001	CN1316546A Chemical vapor deposition equipment and chemical vapor deposition method
10/09/2001	US6300600 Hot wall rapid thermal processor
10/09/2001	US6300153 Metal organic vapor phase epitaxy and method for manufacturing semiconductor laser device
10/04/2001	WO2001073852A1 Sigec semiconductor crystal and production method thereof
10/04/2001	WO2001073170A1 Zinc oxide semiconductor material
10/04/2001	WO2001073160A1 Method for preparing zinc oxide semi-conductor material
10/04/2001	EP1138063A1 Fabrication of gallium nitride layers by lateral growth
10/04/2001	EP1138060A1 Gas driven rotating susceptor for rapid thermal processing (rtp) system
10/04/2001	DE10114029A1 III-V-Halbleiter und Verfahren zu seiner Herstellung III-V semiconductors and process for its preparation
10/02/2001	US6297522 Highly uniform silicon carbide epitaxial layers
10/02/2001	US6297134 Deposition of titanium oxide film containing droping element on Si substrate
10/02/2001	US6296956 Vapor deposition of aluminum nitride forming single crystals
09/2001
09/27/2001	WO2001071814A1 METHOD FOR PREPARING LOW-RESISTANT p-TYPE SrTiO¿3?
09/27/2001	WO2001071785A1 Method for producing semiconductor crystal
09/27/2001	WO2001070005A2 Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
09/27/2001	WO2000022203A3 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy
09/27/2001	US20010024884 Low threading dislocation density relaxed mismatched epilayers without high temperature growth
09/27/2001	US20010024871 Semiconductor device and method and apparatus for manufacturing semiconductor device
09/27/2001	US20010024679 Microelectronics
09/27/2001	US20010024633 Method of vertically aligning carbon nanotubes on substrates at low pressure and low pressure using thermal chemical vapor deposition with DC bias
09/27/2001	US20010023971 Film forming method and film forming apparatus as well as silicon-based film, photovoltaic device and solar cell, sensor and image pick-up device using the same
09/27/2001	US20010023875 Chemical delivery systems and methods of delivery
09/27/2001	US20010023660 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
09/27/2001	EP1144737A3 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy
09/26/2001	EP1136590A2 Apparatus and method for controlling the temperature of a wall of a reaction chamber
09/26/2001	EP1136589A1 CVD apparatus having movable gas inlet
09/26/2001	EP0708983B1 Chemical vapor deposition process for fabricating layered superlattice materials
09/25/2001	US6294025 Device for producing oxidic thin films
09/25/2001	US6294016 Growing gan-based epitaxial layer while doping epitaxial layer with magnesium with hydrogen serving as carrier gas by use of metalorganic chemical vapor deposition; rapid thermal annealing in nitrogen atmosphere; nitridation and annealing
09/20/2001	WO2001068957A1 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
09/20/2001	WO2001068955A1 Iii-v nitride substrate boule and method of making and using the same
09/20/2001	WO2001068954A2 Axial gradient transport apparatus and process
09/20/2001	WO2001068271A1 Controlling surface chemistry on solid substrates
09/20/2001	US20010022154 Method and apparatus for single crystal gallium nitride (GAN) bulk synthesis
09/19/2001	EP1134794A1 Semiconductor thin film and thin film device
09/19/2001	EP1134304A2 Method of vertically aligning carbon nanotubes on substrates using thermal chemical vapor deposition with dc bias
09/19/2001	EP1133593A1 Growth method for a crystalline structure
09/19/2001	CN1313412A Process for generating epitaxial layer of III-family nitrode on monocrystal substrate and its products and equipment
09/18/2001	US6290774 Sequential hydride vapor phase epitaxy
09/18/2001	US6290491 Method for heating a semiconductor wafer in a process chamber by a shower head, and process chamber
09/13/2001	WO2001066832A2 Graded thin films
09/13/2001	US20010021593 Chemical vapor deposition apparatus and chemical vapor deposition process
09/13/2001	US20010021574 Method of manufacturing silicon epitaxial wafer

1 ... 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 ... 134