Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
10/1998
10/14/1998EP0871228A2 Semiconductor substrate, semiconductor device and method of manufacturing the same
10/14/1998EP0871212A1 Heat treatment apparatus
10/14/1998EP0870852A1 Method and apparatus for preventing condensation in an exhaust passage
10/14/1998CN2294270Y Upside down type crystal growth reactor using metallic organic compound vapour-deposition tech.
10/14/1998CN2294269Y 气垫式衬底旋转装置 Air Cushion substrate rotating device
10/13/1998US5820948 Positioning targets; heating
10/13/1998US5820686 A support for substrate
10/13/1998US5820685 Wafer support device
10/13/1998US5820367 Boat for heat treatment
10/13/1998US5820366 Dual vertical thermal processing furnace
10/13/1998US5819684 Chemical vapor deposition apparatus
10/13/1998CA2144092C Extraction of spatially varying dielectric function from ellipsometric data
10/08/1998WO1998044175A1 Epitaxial growth furnace
10/07/1998CN1195036A Cooling system and method for epitaxial barrel reactor
10/06/1998US5817179 GaAs anneal boat design and method for use
10/06/1998US5817175 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds
10/01/1998WO1998042897A1 Susceptor designs for silicon carbide thin films
10/01/1998WO1998042896A1 Process of diamond growth from c¿70?
10/01/1998CA2284771A1 Susceptor designs for silicon carbide thin films
10/01/1998CA2283268A1 Process of diamond growth from c70
09/1998
09/30/1998EP0867538A1 Heating apparatus
09/30/1998EP0867537A1 Method for the production of low-cost isotopically engineered diamond anvils
09/30/1998EP0867536A1 Low-cost isotopically engineered diamond amvils
09/30/1998CN1194624A Polycrystalline silicon rod and process for preparing the same
09/29/1998US5815520 light emitting semiconductor device and its manufacturing method
09/29/1998US5814534 Method of doping with beryllium and method of fabricating semiconductor optical element doped with beryllium
09/29/1998US5814290 Silicon nitride nanowhiskers and method of making same
09/29/1998US5814150 Method of and apparatus for forming single-crystalline thin film, beam irradiator, beam irradiating method and beam reflecting device
09/29/1998US5814149 Vapor deposition on platinum substrate
09/29/1998US5813851 Heat treatment method
09/24/1998WO1998041806A1 Method for cooling a furnace, and furnace provided with a cooling device
09/23/1998EP0865518A1 A device for heat treatment of objects and a method for producing a susceptor
09/22/1998US5811349 Method for growing a semiconductor layer
09/22/1998US5810930 Photo-chemical vapor deposition apparatus having exchange apparatus of optical window and method of exchanging optical window therewith
09/22/1998US5810925 GaN single crystal
09/17/1998WO1998040543A1 Process for preparing polysilicon using exothermic reaction
09/17/1998CA2283562A1 Process for preparing polysilicon using exothermic reaction
09/16/1998EP0865083A2 Electrode for semiconductor device and method of manufacturing it
09/15/1998US5809211 Ramping susceptor-wafer temperature using a single temperature input
09/15/1998US5807792 Rotation; alternating supplying segments
09/15/1998US5807432 Process for producing diamond covered member
09/15/1998CA2101285C Method of forming single-crystalline thin film
09/10/1998DE19801439A1 Silicon epitaxial layer growth apparatus
09/09/1998EP0863228A1 Vertical type CVD apparatus
09/09/1998CN1192490A Method and system for monocrystalline epitaxial deposition
09/08/1998US5804042 Reduces or eliminates secondary plasma around backplane
09/08/1998US5803967 Repeatedly cycling between first and second growth parameters; etching at intermediate stages to remove defects
09/02/1998EP0778837B1 Preparation of metalorganic compounds
09/02/1998CN1192265A Passive gas substrate thermal conditioning apparatus and method
09/01/1998US5800622 Vapor-phase growth apparatus and compound semiconductor device fabricated thereby
08/1998
08/27/1998WO1998037258A1 A rapid thermal processing barrel reactor for processing substrates
08/26/1998EP0800592B1 Method of producing boron-doped monocrystalline silicon carbide
08/25/1998US5798293 Wafer bonding technique: two amorphous layers are placed face to face and bonded by heating; piece is annealed at such a high temperature that the material of the amorphous layer is allowed to flow for relaxing a 3c-sic-layer; epitaxial growth
08/25/1998CA2128590C Direct mombe and movpe growth of ii-vi materials on silicon
08/25/1998CA2010482C Process for the fabrication of devices; utilizing electrochemically generated gases
08/19/1998EP0859155A2 Fluid control apparatus
08/19/1998EP0783599A4 Apparatus for growing metal oxides using organometallic vapor phase epitaxy
08/18/1998US5795396 Apparatus for forming crystalline film
08/18/1998US5795385 Method of forming single-crystalline thin film by beam irradiator
08/18/1998US5795384 Nitriding, carbiding, and/or carbonization of carbon powder using cobalt or nickel catalyst and alkali metal chloride volatization reagent
08/13/1998WO1998035531A1 Model based temperature controller for semiconductor thermal processors
08/11/1998US5792701 Used for mixing gases in the deposition/oxidations processes in furnaces to achieve uniform film growth and thickness
08/11/1998US5792556 Diamond crystal
08/11/1998US5792273 Secondary edge reflector for horizontal reactor
08/11/1998US5792270 Apparatus for forming a pattern of nucleation sites
08/11/1998US5792257 Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
08/04/1998US5790751 Rapid thermal heating apparatus including a plurality of light pipes and a pyrometer for measuring substrate temperature
08/04/1998US5790750 Profiled substrate heating utilizing a support temperature and a substrate temperature
08/04/1998US5789309 Method and system for monocrystalline epitaxial deposition
08/04/1998US5788777 Susceptor for an epitaxial growth factor
08/04/1998CA2055400C Method of forming crystal
07/1998
07/30/1998WO1998032902A1 Method of manufacturing crystalline particles on a support or a substrate
07/30/1998DE19702311A1 Growth substrate with diamond or diamond-like carbon growth nuclei
07/28/1998US5785764 Susceptor for a gas phase growth apparatus
07/28/1998US5785755 Growing layers of different compositions; tributylphosphine in standby step
07/28/1998CA2055675C Method for forming crystal article
07/22/1998EP0854210A1 Vapor deposition apparatus and method for forming thin film
07/21/1998US5783335 Fluidized bed deposition of diamond
07/21/1998US5782979 Substrate holder for MOCVD
07/21/1998US5782975 Method for providing a silicon and diamond substrate having a carbon to silicon transition layer and apparatus thereof
07/15/1998EP0853138A1 Vapor-phase film growth apparatus and gas ejection head
07/15/1998EP0853137A1 High pressure MOCVD reactor system
07/15/1998EP0853134A1 Method for obtaining a coating with a uniform distribution of reactants
07/15/1998EP0852575A1 Silicon nitride nanowhiskers and method of making same
07/15/1998EP0737258A4 Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films
07/14/1998US5781693 Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
07/14/1998US5779804 Gas feeding device for controlled vaporization of an organanometallic compound used in deposition film formation
07/14/1998US5778968 For stabilizing the temperature of semiconductor wafers
07/09/1998WO1998029178A1 Inlet structures for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system
07/08/1998EP0852393A2 Thermal reaction chamber for semiconductor wafer processing operations
07/07/1998US5776552 Gas mixture of hydrogen, inert with carbon compound and oxygen
07/07/1998US5776391 Silicon carbide carrier for wafer processing and method for making same
07/07/1998US5776253 Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device
07/07/1998US5776246 Wide signel crystal; for semiconductors, surface acoustic lave devices
07/07/1998US5775416 Temperature controlled chuck for vacuum processing
07/07/1998CA2054050C Method and apparatus for making grit and abrasive media
07/01/1998EP0851467A2 Method and system for monocrystalline epitaxial deposition
07/01/1998EP0851040A1 Surface treatment apparatus using gas jet
07/01/1998CN1186128A Dual vertical thermal processing furance
06/1998
06/30/1998US5772760 Method for the preparation of nanocrystalline diamond thin films