| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 02/06/2001 | US6183552 Vapor deposition |
| 02/01/2001 | WO2001007691A1 Apparatus for growing epitaxial layers on wafers |
| 01/31/2001 | EP1072570A1 Silicon carbide and process for its production |
| 01/31/2001 | EP1071913A1 Compact external torch assembly for semiconductor processing |
| 01/31/2001 | CN1282386A Growth of very uniform silicon carbide external layers |
| 01/31/2001 | CN1061387C Method for forming diamond-like carbon film (DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cattodes |
| 01/30/2001 | US6180570 Biaxially textured articles formed by plastic deformation |
| 01/30/2001 | US6180420 Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates |
| 01/30/2001 | US6179913 Compound gas injection system and methods |
| 01/30/2001 | US6179609 Compact external torch assembly for semiconductor processing |
| 01/25/2001 | WO2001006044A1 Growth of epitaxial semiconductor material with improved crystallographic properties |
| 01/25/2001 | WO2001006043A1 Susceptorless semiconductor wafer epitaxial layer growth method |
| 01/25/2001 | WO2001006031A1 Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth |
| 01/24/2001 | EP1071116A1 Method and apparatus for removing material from the periphery of a substrate, using a remote plasma source |
| 01/24/2001 | EP1070161A1 A method and a device for epitaxial growth of objects by chemical vapour deposition |
| 01/23/2001 | US6177688 Low defect densities |
| 01/23/2001 | US6177292 Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate |
| 01/23/2001 | US6176925 Detached and inverted epitaxial regrowth & methods |
| 01/18/2001 | WO2001004377A1 Seal means and its application in deposition reactor |
| 01/18/2001 | WO2001004370A1 Single crystal tungsten alloy penetrator and method of making |
| 01/18/2001 | DE19933648A1 Production of fine doped diamond particles, used for electron-emitting device or coating, e.g. for flat picture screen, involves detonating explosive with negative oxygen balance that contains carbon and (added) dopant |
| 01/18/2001 | CA2389593A1 Single crystal tungsten alloy penetrator and method of making |
| 01/17/2001 | EP1069601A1 Method of manufacturing semiconductor wafer |
| 01/17/2001 | EP1069599A2 Apparatus for deposition of thin films on wafers |
| 01/17/2001 | EP1069206A2 Nanoscale conductive connectors and method for making same |
| 01/17/2001 | EP1068480A1 Substrate support for a thermal processing chamber |
| 01/16/2001 | US6174463 Layer crystal structure oxide comprising bismuth, first element selected from sodium, potassium, calcium, barium, strontium, lead and bismuth, second element selected from iron, titanium, niobium, tantalum and tungsten |
| 01/16/2001 | US6174377 Processing chamber for atomic layer deposition processes |
| 01/16/2001 | US6174367 Epitaxial system |
| 01/10/2001 | EP1067588A2 Thermal reaction chamber for semiconductor wafer processing operations |
| 01/10/2001 | EP1067587A2 Thermally processing a substrate |
| 01/10/2001 | EP1067586A2 A semiconductor processing system |
| 01/10/2001 | CN1279733A Method for producing a gallium nitride epitaxial layer |
| 01/10/2001 | CN1279504A Growth method of III-IV nitride semiconductors and gas phase growth apparatus |
| 01/09/2001 | US6173116 Furnace for rapid thermal processing |
| 01/09/2001 | US6172337 System and method for thermal processing of a semiconductor substrate |
| 01/09/2001 | US6171438 Plasma processing apparatus and plasma processing method |
| 01/09/2001 | US6171394 Method for manufacturing compound semiconductor epitaxial wafer |
| 01/04/2001 | DE19929591A1 Process for producing an epitaxial gallium nitride layer on a substrate comprises applying a precursor compound containing gallium carbodiimide on the substrate, and converting into crystalline gallium nitride by pyrolysis |
| 01/04/2001 | DE10019807A1 Titanium oxide film used in solar cell, contains dopant element whose density is high towards silicon substrate surface |
| 01/03/2001 | EP1065705A2 Group III nitride compound semiconductor device and producing method therefore |
| 01/03/2001 | EP1065701A2 Inert barrier for high purity epitaxial deposition systems |
| 01/03/2001 | EP1065299A2 Group III-V nitride semiconductor growth method and vapor phase growth apparatus |
| 01/03/2001 | EP1064418A1 Apparatus for moving exhaust tube of barrel reactor |
| 01/03/2001 | CN1060233C Vapor growth apparatus and vapor growth method capable of growing a compound semicondcutor layer having an evenness and an interfacial sharpness in units of atomic layers with good productivity |
| 01/02/2001 | US6169271 Model based method for wafer temperature control in a thermal processing system for semiconductor manufacturing |
| 01/02/2001 | US6167834 Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| 12/28/2000 | WO2000079570A2 Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 12/28/2000 | WO2000079033A1 Epitaxial films |
| 12/26/2000 | US6167195 Multizone illuminator for rapid thermal processing with improved spatial resolution |
| 12/26/2000 | US6165874 Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
| 12/26/2000 | US6165812 Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor |
| 12/26/2000 | US6165437 Single crystal particles are homogeneous containing no crystal seed inside the particles; have an octa- or higher polyhedral shape; have a d/h ratio of from 0.5 to 3.0 |
| 12/26/2000 | US6165265 Method of deposition of a single-crystal silicon region |
| 12/21/2000 | WO2000077837A1 Process for polycrystalline silicon film growth and apparatus for same |
| 12/20/2000 | EP1061083A1 Adduct of a dialkylgalliumazide with hydrazine for MOCVD of GaN |
| 12/20/2000 | EP1060301A1 Ceiling arrangement for an epitaxial growth reactor |
| 12/20/2000 | CN1277735A Apparatus for manufacturing semiconductor device and its manufacturing method |
| 12/19/2000 | US6163557 Mesas provide reduced area surfaces for epitaxially growing group iii-v nitride films, to reduce thermal film stresses in the films to reduce cracking |
| 12/19/2000 | US6162706 Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic |
| 12/19/2000 | US6161499 Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma |
| 12/19/2000 | US6161311 System and method for reducing particles in epitaxial reactors |
| 12/13/2000 | EP1059661A2 Crack-free epitaxial semiconductor layer formed by lateral growth |
| 12/13/2000 | CN1276741A Semiconductor mfg. system with getter safety device |
| 12/12/2000 | US6159873 Method for producing semiconductor device and production apparatus of semiconductor device |
| 12/12/2000 | US6159831 Process to prepare an array of wires with submicron diameters |
| 12/12/2000 | US6159287 Truncated susceptor for vapor-phase deposition |
| 12/12/2000 | US6158952 Oriented synthetic crystal assemblies |
| 12/07/2000 | WO2000074125A1 Apparatus for manufacturing semiconductor device |
| 12/07/2000 | WO2000074124A1 Apparatus for manufacturing semiconductor device |
| 12/07/2000 | WO2000073533A1 Cooled window |
| 12/07/2000 | WO2000016380A9 Method and apparatus for cooling substrates |
| 12/06/2000 | EP1056594A1 A-site and/or b-site modified pbzrtio3 materials and films |
| 12/05/2000 | US6157003 Furnace for processing semiconductor wafers |
| 12/05/2000 | US6156105 Semiconductor manufacturing system with getter safety device |
| 11/29/2000 | EP1055749A1 Process for producing a semiconductor wafer |
| 11/28/2000 | US6153542 Reacting silane and hydrogen peroxide; depressurization |
| 11/28/2000 | US6153260 Method for heating exhaust gas in a substrate reactor |
| 11/28/2000 | US6153165 A complex in which a polycrystalline plate consisting of silicon and carbon atoms is stacked on the surface of a single crystal silicon carbide base and is subjected to heat treatment, which transforms polycrystals to single crystal |
| 11/28/2000 | US6153012 Device for treating a substrate |
| 11/28/2000 | US6153010 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
| 11/23/2000 | WO2000070662A1 Device for film deposition |
| 11/23/2000 | WO2000070661A1 Apparatus for manufacturing semiconductor device and method of manufacture thereof |
| 11/23/2000 | WO2000070129A1 Method and apparatus for epitaxially growing a material on a substrate |
| 11/22/2000 | EP1054442A2 Method for growing epitaxial group III nitride compound semiconductors on silicon |
| 11/21/2000 | US6151447 Rapid thermal processing apparatus for processing semiconductor wafers |
| 11/21/2000 | US6149975 Potassium-containing thin film and process for producing the same |
| 11/21/2000 | US6149365 Support frame for substrates |
| 11/16/2000 | WO2000068474A1 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND SiC WAFER PRODUCTION METHOD |
| 11/16/2000 | WO2000068473A1 Detached and inverted epitaxial regrowth & methods |
| 11/16/2000 | WO2000068472A1 Truncated susceptor for vapor-phase deposition |
| 11/16/2000 | WO2000068471A1 Sequential hydride vapor-phase epitaxy |
| 11/16/2000 | WO2000068470A1 Magnesium-doped iii-v nitrides & methods |
| 11/16/2000 | WO2000034999A3 An epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof |
| 11/16/2000 | DE19922167A1 Verfahren zur Herstellung einer Halbleiterscheibe A process for producing a semiconductor wafer |
| 11/16/2000 | DE10009876A1 Single crystal thin film formation method for semiconductor industries, involves growing single crystal thin film on exposed surface of amorphous thin film by nuclear or molecular beam of specific incidence angle |
| 11/15/2000 | EP1052529A1 Three dimensional periodic dielectric structure with forbidden photonic bandgap and method for its manufacture |
| 11/15/2000 | EP1052309A2 Apparatus for fabrication of thin films |
| 11/15/2000 | EP1051535A2 SUBSTRATE SUPPORT FOR SiC EPITAXY AND METHOD FOR PRODUCING AN INSERT FOR A SUSCEPTOR |
| 11/14/2000 | US6146457 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |