Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
10/1997
10/07/1997US5675028 Used for metal organic chemical vapor deposition of gallium, indium and aluminum nitrides on semiconductor substrates
10/07/1997US5674813 Process for preparing layered structure including oxide super conductor thin film
10/07/1997US5674320 Susceptor for a device for epitaxially growing objects and such a device
10/02/1997WO1997036320A1 Vapor phase growth apparatus and vapor phase growth method
09/1997
09/30/1997US5672204 Apparatus for vapor-phase epitaxial growth
09/24/1997EP0796932A1 Method of compound semiconductor crystal growth amd semicoductor device fabricated thereby
09/23/1997US5671323 Zigzag heating device with downward directed connecting portions
09/23/1997US5669976 CVD method and apparatus therefor
09/17/1997EP0795897A2 Low pressure CVD system
09/17/1997CN1159491A Method for high-speed gas-phase grown diamond
09/17/1997CN1159490A Compound semi-conductors and controlled doping thereof
09/16/1997US5667852 Plasma jet CVD method of depositing diamond or diamond-like films
09/16/1997CA2095449C Supersaturated rare earth doped semiconductor layers by chemical vapor deposition
09/12/1997WO1997033305A1 Silicon single crystal and process for producing single-crystal silicon thin film
09/10/1997EP0794561A1 Method of growing a silicon single crystal thin film in vapor phase
09/10/1997EP0493609B1 Method and device for manufacturing diamond
09/09/1997US5665430 Chemical vapor deposition method for depositing diamond using a high temperature vacuum substrate mount
09/09/1997US5665326 Method for synthesizing titanium nitride whiskers
09/09/1997US5665209 Depositing a refractory metal film containing nitrogen on a substrate and heat treating film
09/04/1997WO1997032060A1 Process for preparing semiconductor monocrystalline thin film
09/03/1997EP0792956A2 Radiant heating apparatus and method
09/03/1997EP0792954A2 Method for growing single-crystalline semiconductor film and apparatus used therefor
09/03/1997CN1158493A Method and apparatus for purging barrel reactors
09/03/1997CN1158492A Susceptor and baffle therefor
09/02/1997US5662877 Process for forming diamond-like thin film
09/02/1997US5662469 Method of thermal processing
08/1997
08/28/1997WO1997031140A1 Method of epitaxial growth of monocrystalline '3a' group metal nitrides
08/28/1997WO1997031134A1 A susceptor for a device for epitaxially growing objects and such a device
08/28/1997WO1997031133A1 A susceptor for a device for epitaxially growing objects and such a device
08/27/1997CN1158131A Metalogranic compounds
08/26/1997US5660881 Increasing the bonding strength with carbide substrate, reducing the cobalt concentration on outer layer by heating to evaporate and etching
08/26/1997US5660694 Vapor deposition on target material while controlling direct current potential
08/26/1997US5660628 Method of manufacturing semiconductor epitaxial wafer
08/20/1997CN1157477A Method of epitaxial film growth for semiconductor devices
08/19/1997US5659184 III-V compound semiconductor device with a polycrystalline structure with minimum grain size of 0.6 μm and printer and display device utilizing the same
08/14/1997DE19605245A1 Producing crystallisation centres on the surface of substrate
08/13/1997EP0789386A2 Method of fabricating an abrupt hetero interface by organometallic vapor phase growth
08/13/1997EP0720665B1 Method for obtaining diamond and diamond-like films
08/13/1997CN1156996A Preparation of metalorganic compounds for growing epitaxial semiconductor layers
08/12/1997US5656828 Electronic component with a semiconductor composite structure
08/12/1997US5656076 Method for growing III-V group compound semiconductor crystal
08/06/1997EP0787839A1 Process for calibrating the temperature of an epitaxy reactor
08/06/1997EP0663023B1 Heteroepitaxially deposited diamond
08/05/1997US5653952 Process for synthesizing diamond using combustion method
08/05/1997US5653808 Gas injection system for CVD reactors
08/05/1997US5653807 Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy
08/05/1997US5653802 Method for forming crystal
08/05/1997US5653798 Method of making substrates for the growth of 3C-silicon carbide
07/1997
07/29/1997US5652431 In-situ monitoring and feedback control of metalorganic precursor delivery
07/29/1997US5652021 Combustion chemical vapor deposition of films and coatings
07/29/1997US5651827 Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same
07/29/1997US5651670 Heat treatment method and apparatus thereof
07/24/1997WO1997026680A1 Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor
07/22/1997US5650198 Vapor deposition a group iii metalorganic by forming nitrides from nitrogen, hydrogen, alkylamine, ammonia or hydrazine
07/22/1997US5650082 Profiled substrate heating
07/17/1997WO1997025457A1 PEROVSKITE WITH AO*(ABO3)n LAYER
07/17/1997DE19600218A1 Perowskit mit AO*(ABO¶3¶)¶n¶-Schicht Perovskite with AO * (ABO¶3¶) ¶n¶ layer
07/16/1997EP0784337A2 Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth
07/16/1997EP0784106A1 Epitaxial growth method
07/16/1997EP0783599A1 Apparatus for growing metal oxides using organometallic vapor phase epitaxy
07/16/1997EP0756580A4 Method and apparatus for producing nanostructured ceramic powders and whiskers
07/16/1997EP0656870A4 Methods and apparati for producing fullerenes.
07/15/1997US5648127 Method of applying, sculpting, and texturing a coating on a substrate and for forming a heteroepitaxial coating on a surface of a substrate
07/15/1997US5648114 Chemical vapor deposition process for fabricating layered superlattice materials
07/15/1997US5647917 Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth
07/09/1997EP0783041A1 Method and apparatus for purging barrel reactors
07/09/1997EP0782637A1 Ultra-low pressure metal-organic vapor phase epitaxy (movpe) method of producing ii-vi semiconductor compounds
07/09/1997EP0477374B1 Process for growing semiconductor crystal
07/08/1997US5646425 Supersaturated rare earth doped semiconductor layers by chemical vapor deposition
07/08/1997US5645638 Method and apparatus for preparing crystalline thin-films for solid-state lasers
07/08/1997US5645625 In a degassing module permeable to gas but impervious to liquid
07/08/1997US5645417 Dimpled thermal processing furnace tube
07/01/1997US5644145 Nonphotodegrading semiconductor having uniform, large area surface, photoelectric efficiency; photoelectric cells
07/01/1997US5643641 Surface treatment of polymer substrates, carbon, vaporization and reaction to modify surface structure
06/1997
06/25/1997EP0780490A1 Methods and apparatus for reducing residues in semiconductor processing chambers
06/25/1997EP0779859A1 Oriented crystal assemblies
06/25/1997CN1152627A Method for regulating barrel-shape reactor cleaning system
06/24/1997US5641381 Covering substrate with release layer, depositing indium phosphide film, coating with wax, curing, etching, removing wax
06/18/1997EP0779380A1 III-V Semiconductor material and electronic device incorporating this material
06/18/1997EP0778838A1 Formation of a metalorganic compound for growing epitaxial semiconductor layers
06/18/1997EP0778837A1 Preparation of metalorganic compounds
06/17/1997US5639300 Epitaxy with reusable template
06/10/1997US5637352 From organometallic adduct
06/10/1997US5637146 Used for epitaxial growth of doped gallium nitride based films by nitriding and doping
06/10/1997US5637145 Method of vapor phase epitaxial growth
06/04/1997EP0776998A1 Titanate whisker and process for the production thereof
06/03/1997US5636320 Sealed chamber with heating lamps provided within transparent tubes
06/03/1997US5635243 Forming a coating on a substrate by radiating to immobilize, diffuse, vaporize and react constiuent elements or alter its physical structure (carbide to diamond on steel); cutting tool inserts
06/03/1997US5634974 Method for forming hemispherical grained silicon
05/1997
05/29/1997WO1997019303A1 Temperature controlled chuck for vacuum processing
05/27/1997US5632820 Thermal treatment furnace in a system for manufacturing semiconductors
05/27/1997US5632812 Diamond electronic device and process for producing the same
05/21/1997EP0650465A4 Conversion of fullerenes to diamond.
05/21/1997EP0633997A4 A rapid thermal processing apparatus for processing semiconductor wafers.
05/14/1997EP0502209B1 Method and apparatus for growing compound semiconductor crystals
05/13/1997US5628834 Surfactant-enhanced epitaxy
05/13/1997US5628824 Efficiency
05/09/1997WO1997016580A1 Method of forming diamond-like carbon film (dlc), dlc film formed thereby, use of the same, field emitter array and field emitter cathodes
05/07/1997EP0772230A1 Method of epitaxial growth of a film for semiconductor devices
05/07/1997EP0672298A4 Substrates for the growth of 3c-silicon carbide.