Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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10/07/1997 | US5675028 Used for metal organic chemical vapor deposition of gallium, indium and aluminum nitrides on semiconductor substrates |
10/07/1997 | US5674813 Process for preparing layered structure including oxide super conductor thin film |
10/07/1997 | US5674320 Susceptor for a device for epitaxially growing objects and such a device |
10/02/1997 | WO1997036320A1 Vapor phase growth apparatus and vapor phase growth method |
09/30/1997 | US5672204 Apparatus for vapor-phase epitaxial growth |
09/24/1997 | EP0796932A1 Method of compound semiconductor crystal growth amd semicoductor device fabricated thereby |
09/23/1997 | US5671323 Zigzag heating device with downward directed connecting portions |
09/23/1997 | US5669976 CVD method and apparatus therefor |
09/17/1997 | EP0795897A2 Low pressure CVD system |
09/17/1997 | CN1159491A Method for high-speed gas-phase grown diamond |
09/17/1997 | CN1159490A Compound semi-conductors and controlled doping thereof |
09/16/1997 | US5667852 Plasma jet CVD method of depositing diamond or diamond-like films |
09/16/1997 | CA2095449C Supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
09/12/1997 | WO1997033305A1 Silicon single crystal and process for producing single-crystal silicon thin film |
09/10/1997 | EP0794561A1 Method of growing a silicon single crystal thin film in vapor phase |
09/10/1997 | EP0493609B1 Method and device for manufacturing diamond |
09/09/1997 | US5665430 Chemical vapor deposition method for depositing diamond using a high temperature vacuum substrate mount |
09/09/1997 | US5665326 Method for synthesizing titanium nitride whiskers |
09/09/1997 | US5665209 Depositing a refractory metal film containing nitrogen on a substrate and heat treating film |
09/04/1997 | WO1997032060A1 Process for preparing semiconductor monocrystalline thin film |
09/03/1997 | EP0792956A2 Radiant heating apparatus and method |
09/03/1997 | EP0792954A2 Method for growing single-crystalline semiconductor film and apparatus used therefor |
09/03/1997 | CN1158493A Method and apparatus for purging barrel reactors |
09/03/1997 | CN1158492A Susceptor and baffle therefor |
09/02/1997 | US5662877 Process for forming diamond-like thin film |
09/02/1997 | US5662469 Method of thermal processing |
08/28/1997 | WO1997031140A1 Method of epitaxial growth of monocrystalline '3a' group metal nitrides |
08/28/1997 | WO1997031134A1 A susceptor for a device for epitaxially growing objects and such a device |
08/28/1997 | WO1997031133A1 A susceptor for a device for epitaxially growing objects and such a device |
08/27/1997 | CN1158131A Metalogranic compounds |
08/26/1997 | US5660881 Increasing the bonding strength with carbide substrate, reducing the cobalt concentration on outer layer by heating to evaporate and etching |
08/26/1997 | US5660694 Vapor deposition on target material while controlling direct current potential |
08/26/1997 | US5660628 Method of manufacturing semiconductor epitaxial wafer |
08/20/1997 | CN1157477A Method of epitaxial film growth for semiconductor devices |
08/19/1997 | US5659184 III-V compound semiconductor device with a polycrystalline structure with minimum grain size of 0.6 μm and printer and display device utilizing the same |
08/14/1997 | DE19605245A1 Producing crystallisation centres on the surface of substrate |
08/13/1997 | EP0789386A2 Method of fabricating an abrupt hetero interface by organometallic vapor phase growth |
08/13/1997 | EP0720665B1 Method for obtaining diamond and diamond-like films |
08/13/1997 | CN1156996A Preparation of metalorganic compounds for growing epitaxial semiconductor layers |
08/12/1997 | US5656828 Electronic component with a semiconductor composite structure |
08/12/1997 | US5656076 Method for growing III-V group compound semiconductor crystal |
08/06/1997 | EP0787839A1 Process for calibrating the temperature of an epitaxy reactor |
08/06/1997 | EP0663023B1 Heteroepitaxially deposited diamond |
08/05/1997 | US5653952 Process for synthesizing diamond using combustion method |
08/05/1997 | US5653808 Gas injection system for CVD reactors |
08/05/1997 | US5653807 Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy |
08/05/1997 | US5653802 Method for forming crystal |
08/05/1997 | US5653798 Method of making substrates for the growth of 3C-silicon carbide |
07/29/1997 | US5652431 In-situ monitoring and feedback control of metalorganic precursor delivery |
07/29/1997 | US5652021 Combustion chemical vapor deposition of films and coatings |
07/29/1997 | US5651827 Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same |
07/29/1997 | US5651670 Heat treatment method and apparatus thereof |
07/24/1997 | WO1997026680A1 Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor |
07/22/1997 | US5650198 Vapor deposition a group iii metalorganic by forming nitrides from nitrogen, hydrogen, alkylamine, ammonia or hydrazine |
07/22/1997 | US5650082 Profiled substrate heating |
07/17/1997 | WO1997025457A1 PEROVSKITE WITH AO*(ABO3)n LAYER |
07/17/1997 | DE19600218A1 Perowskit mit AO*(ABO¶3¶)¶n¶-Schicht Perovskite with AO * (ABO¶3¶) ¶n¶ layer |
07/16/1997 | EP0784337A2 Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth |
07/16/1997 | EP0784106A1 Epitaxial growth method |
07/16/1997 | EP0783599A1 Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
07/16/1997 | EP0756580A4 Method and apparatus for producing nanostructured ceramic powders and whiskers |
07/16/1997 | EP0656870A4 Methods and apparati for producing fullerenes. |
07/15/1997 | US5648127 Method of applying, sculpting, and texturing a coating on a substrate and for forming a heteroepitaxial coating on a surface of a substrate |
07/15/1997 | US5648114 Chemical vapor deposition process for fabricating layered superlattice materials |
07/15/1997 | US5647917 Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
07/09/1997 | EP0783041A1 Method and apparatus for purging barrel reactors |
07/09/1997 | EP0782637A1 Ultra-low pressure metal-organic vapor phase epitaxy (movpe) method of producing ii-vi semiconductor compounds |
07/09/1997 | EP0477374B1 Process for growing semiconductor crystal |
07/08/1997 | US5646425 Supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
07/08/1997 | US5645638 Method and apparatus for preparing crystalline thin-films for solid-state lasers |
07/08/1997 | US5645625 In a degassing module permeable to gas but impervious to liquid |
07/08/1997 | US5645417 Dimpled thermal processing furnace tube |
07/01/1997 | US5644145 Nonphotodegrading semiconductor having uniform, large area surface, photoelectric efficiency; photoelectric cells |
07/01/1997 | US5643641 Surface treatment of polymer substrates, carbon, vaporization and reaction to modify surface structure |
06/25/1997 | EP0780490A1 Methods and apparatus for reducing residues in semiconductor processing chambers |
06/25/1997 | EP0779859A1 Oriented crystal assemblies |
06/25/1997 | CN1152627A Method for regulating barrel-shape reactor cleaning system |
06/24/1997 | US5641381 Covering substrate with release layer, depositing indium phosphide film, coating with wax, curing, etching, removing wax |
06/18/1997 | EP0779380A1 III-V Semiconductor material and electronic device incorporating this material |
06/18/1997 | EP0778838A1 Formation of a metalorganic compound for growing epitaxial semiconductor layers |
06/18/1997 | EP0778837A1 Preparation of metalorganic compounds |
06/17/1997 | US5639300 Epitaxy with reusable template |
06/10/1997 | US5637352 From organometallic adduct |
06/10/1997 | US5637146 Used for epitaxial growth of doped gallium nitride based films by nitriding and doping |
06/10/1997 | US5637145 Method of vapor phase epitaxial growth |
06/04/1997 | EP0776998A1 Titanate whisker and process for the production thereof |
06/03/1997 | US5636320 Sealed chamber with heating lamps provided within transparent tubes |
06/03/1997 | US5635243 Forming a coating on a substrate by radiating to immobilize, diffuse, vaporize and react constiuent elements or alter its physical structure (carbide to diamond on steel); cutting tool inserts |
06/03/1997 | US5634974 Method for forming hemispherical grained silicon |
05/29/1997 | WO1997019303A1 Temperature controlled chuck for vacuum processing |
05/27/1997 | US5632820 Thermal treatment furnace in a system for manufacturing semiconductors |
05/27/1997 | US5632812 Diamond electronic device and process for producing the same |
05/21/1997 | EP0650465A4 Conversion of fullerenes to diamond. |
05/21/1997 | EP0633997A4 A rapid thermal processing apparatus for processing semiconductor wafers. |
05/14/1997 | EP0502209B1 Method and apparatus for growing compound semiconductor crystals |
05/13/1997 | US5628834 Surfactant-enhanced epitaxy |
05/13/1997 | US5628824 Efficiency |
05/09/1997 | WO1997016580A1 Method of forming diamond-like carbon film (dlc), dlc film formed thereby, use of the same, field emitter array and field emitter cathodes |
05/07/1997 | EP0772230A1 Method of epitaxial growth of a film for semiconductor devices |
05/07/1997 | EP0672298A4 Substrates for the growth of 3c-silicon carbide. |