| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 08/22/2000 | US6107197 Carbon-contaminated layer on the silicon substrate is exposed to a chlorine radical to cause a chemical reaction of the chlorine radical with carbon atoms of the carbon contaminated layer to generate chlorine carbide |
| 08/22/2000 | US6107113 Making stacks of metamorphic layers of semiconductor material having lattice mismatches of several percent between one another or relative to the substrate |
| 08/22/2000 | US6106616 Layer crystal structure oxide, production method thereof, and memory element using the same |
| 08/17/2000 | WO2000048234A1 Device and method for handling substrates by means of a self-levelling vacuum system in epitaxial induction reactors |
| 08/16/2000 | EP1028176A1 Substrate holder and method for its use |
| 08/16/2000 | EP1027482A1 Apparatus and method for the in-situ generation of dopants |
| 08/16/2000 | EP1027474A1 Process tube with in situ gas preheating |
| 08/15/2000 | US6103019 Advanced technique to grow single crystal films on amorphous and/or non-single crystal surfaces |
| 08/15/2000 | US6101844 Double wall reaction chamber glassware |
| 08/10/2000 | WO2000026433A3 Polycrystalline diamond layer with (100) texture |
| 08/09/2000 | EP1025279A1 Introducing process fluid over rotating substrates |
| 08/09/2000 | EP1025278A1 Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| 08/08/2000 | US6100105 Fabrication of InGaAlN based compound semiconductor device |
| 08/08/2000 | US6099917 Pretreatment of oxide substrates and radiation reactive n2+ ion beams on oxide substrates |
| 08/08/2000 | US6099650 Structure and method for reducing slip in semiconductor wafers |
| 08/08/2000 | US6099649 Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal |
| 08/08/2000 | US6099648 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures |
| 08/08/2000 | US6099302 Semiconductor wafer boat with reduced wafer contact area |
| 08/08/2000 | US6098843 Chemical delivery systems and methods of delivery |
| 08/03/2000 | WO2000044966A2 Single-crystal material on non-single-crystalline substrate |
| 08/03/2000 | WO2000044965A1 Manufacture of transition metal carbide and carbonitride whiskers with low residual amounts of oxygen and intermediate oxide phases |
| 08/03/2000 | WO2000044679A1 Methods for manufacturing and depositing fine particles combining flame and laser beam |
| 08/02/2000 | CN1261927A Apparatus and method for nucleotion and deposition of diamond using hot-filament DC plasma |
| 08/01/2000 | US6096130 Method of crystal growth of a GaN layer over a GaAs substrate |
| 08/01/2000 | US6096129 Method of and apparatus for producing single-crystalline diamond of large size |
| 08/01/2000 | US6095806 Semiconductor wafer boat and vertical heat treating system |
| 07/27/2000 | WO2000044038A1 Plasma enhanced cvd process for rapidly growing semiconductor films |
| 07/27/2000 | WO2000043577A1 Cdv method of and reactor for silicon carbide monocrystal growth |
| 07/26/2000 | EP1021591A1 Combustion chemical vapor deposition of phosphate films and coatings |
| 07/26/2000 | EP1021586A1 A rapid thermal processing barrel reactor for processing substrates |
| 07/26/2000 | CN1261203A Manufacture of crystallized silicon series semiconductor films |
| 07/25/2000 | US6093253 Method and a device for epitaxial growth of objects by chemical vapor deposition |
| 07/25/2000 | US6093242 Anisotropy-based crystalline oxide-on-semiconductor material |
| 07/19/2000 | EP0756580B1 Method and apparatus for producing nanostructured ceramic powders and whiskers |
| 07/18/2000 | US6090211 Apparatus and method for forming semiconductor thin layer |
| 07/18/2000 | US6090210 Multi-zone gas flow control in a process chamber |
| 07/13/2000 | WO2000040772A1 Processing chamber for atomic layer deposition processes |
| 07/13/2000 | WO2000022204A3 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 07/12/2000 | EP1018758A1 Method for forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device |
| 07/12/2000 | EP1018167A1 THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES A 3?B 5? OF p- AND n-TYPE ELECTRIC CONDUCTIVITY |
| 07/12/2000 | EP1017876A1 Gas injection system for plasma processing apparatus |
| 07/12/2000 | CN1260009A Method for producing coated workpieces, uses and installation for the method |
| 07/11/2000 | US6086673 Process for producing high-quality III-V nitride substrates |
| 07/11/2000 | US6086672 Growth of bulk single crystals of aluminum nitride: silicon carbide alloys |
| 07/06/2000 | WO2000039371A1 Method of manufacturing single-crystal silicon carbide |
| 07/06/2000 | WO2000039021A1 Chemical delivery systems and methods of delivery |
| 07/06/2000 | DE19963283A1 Two-phase ammonia, for metal organic chemical vapor deposition of gallium nitride based layers in production of semiconductor devices such as blue-emitting light emitting devices, has a liquid phase with a specified low water content |
| 07/06/2000 | DE19849462A1 IR lamp heating for temp. over 1000 degrees C for rear side heating of substrate holders in installations for gas phase epitaxy |
| 07/05/2000 | EP0989211A4 Process for obtaining diamond layers by gaseous-phase synthesis |
| 07/05/2000 | CN1054234C Supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
| 07/04/2000 | US6083813 Method for forming a compound semiconductor device using a buffer layer over a corrugated surface |
| 07/04/2000 | US6083812 Heteroepitaxy by large surface steps |
| 07/04/2000 | US6082294 Method and apparatus for depositing diamond film |
| 06/28/2000 | EP1012358A1 Inflatable elastomeric element for rapid thermal processing (rtp) system |
| 06/28/2000 | CN1258324A Secondary edge reflector for horizontal reactor |
| 06/28/2000 | CN1257940A Process for growing piezoelectric film of aluminium nitride on substrate of high-sound-velocity material |
| 06/27/2000 | US6080642 Method of manufacturing a semiconductor device and a device for applying such a method |
| 06/27/2000 | US6080378 High quality diamond films characterized by their intensity ratio of cathodoluminescence measured at room temperature; chemical vapor deposition on substrates comprising platinum, iridium, nickel, their alloys, silicon or silicides |
| 06/27/2000 | US6079874 Temperature probes for measuring substrate temperature |
| 06/22/2000 | WO2000036635A1 Gas driven rotating susceptor for rapid thermal processing (rtp) system |
| 06/20/2000 | US6077344 Sol-gel deposition of buffer layers on biaxially textured metal substances |
| 06/15/2000 | WO2000034999A2 An epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof |
| 06/15/2000 | DE19855637A1 Verfahren und System zur Halbleiterkristallherstellung mit Temperaturverwaltung Method and system for manufacturing semiconductor crystal with temperature management |
| 06/14/2000 | EP1007771A1 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
| 06/14/2000 | EP1007768A2 Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature |
| 06/13/2000 | US6074768 Process for forming the oxide superconductor thin film and laminate of the oxide superconductor thin films |
| 06/13/2000 | US6074478 Flat selective silicon epitaxial thin film in which facet formation and loading effect are suppressed, dichlorosilane, hydrogen chloride and hydrogen gas are introduced into a reaction chamber. |
| 06/08/2000 | WO2000033388A1 METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
| 06/08/2000 | WO2000033365A1 Fabrication of gallium nitride layers by lateral growth |
| 06/08/2000 | WO2000032840A1 Method and system for producing semiconductor crystals using temperature management |
| 06/08/2000 | WO2000015881A3 Gas feeding system for chemical vapor deposition reactor and method of controlling the same |
| 06/08/2000 | WO2000007221A3 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
| 06/07/2000 | EP1006219A1 Ultrasonic level sensing in a chemical refill system |
| 06/07/2000 | EP1005581A1 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures |
| 06/07/2000 | CN1255736A Semiconductor film mixed with rare-earth |
| 06/07/2000 | CN1255735A Semiconductor layer mixed with chemical vapor deposited rare-earth |
| 06/06/2000 | US6071351 Low temperature chemical vapor deposition and etching apparatus and method |
| 06/06/2000 | US6071349 Gas supplying apparatus and vapor-phase growth plant |
| 06/06/2000 | US6071338 Method for crystal growth of multi-element oxide thin film containing bismuth as constituent element |
| 06/02/2000 | WO2000031323A1 Method and arrangement for deposition of a semiconductor material |
| 06/02/2000 | WO2000031322A1 Method for epitaxial growth on a substrate |
| 06/02/2000 | WO2000031317A1 Reactor and method for chemical vapour deposition |
| 05/31/2000 | EP1005068A2 GaN film having a reduced threading dislocations density and fabrication method thereof |
| 05/31/2000 | CN1255170A Process of diamond growth from C70 |
| 05/30/2000 | US6069682 Spherical shaped semiconductor integrated circuit |
| 05/30/2000 | US6069394 Semiconductor substrate, semiconductor device and method of manufacturing the same |
| 05/30/2000 | US6068883 Distributing diamond grains on a substrate at a high density and growing the diamond film on said substrate by using said diamond grains as growth nuclei |
| 05/30/2000 | US6068685 Semiconductor manufacturing system with getter safety device |
| 05/25/2000 | DE19855021C1 Semiconductor material is deposited by chemical gas phase transport with horizontal and vertical close spacing of the substrate and source material during deposition |
| 05/24/2000 | EP1002142A1 Method and apparatus for reducing deposition of contaminants |
| 05/24/2000 | EP0832407A4 Passive gas substrate thermal conditioning apparatus and method |
| 05/23/2000 | US6066508 Treating a semiconductor integrated circuit wafer, as housed in a reaction furnace, in a hydrogen gas, discharging hydrogen gas form outside of the furnace, converting hydrogen into water by treating the gas with oxidation catalyst |
| 05/23/2000 | US6066204 High pressure MOCVD reactor system |
| 05/18/2000 | WO2000028116A1 Growth method for a crystalline structure |
| 05/18/2000 | WO2000000664A9 Susceptor for barrel reactor |
| 05/18/2000 | DE19847101C1 CVD reactor used in the production of the semiconductor wafers has upper and lower reactor chambers provided with a gas feed line and gas removal line |
| 05/17/2000 | EP1001049A1 Process for purification of organometallic compounds |
| 05/16/2000 | US6064800 Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes |
| 05/16/2000 | US6064511 Fabrication methods and structured materials for photonic devices |
| 05/16/2000 | US6063187 Deposition method for heteroepitaxial diamond |