| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
|---|
| 10/12/1999 | US5964948 Exhaust insert for barrel-type epitaxial reactors |
| 10/12/1999 | US5964944 Method of producing silicon carbide single crystal |
| 10/12/1999 | US5964943 Method of producing boron-doped monocrystalline silicon carbide |
| 10/12/1999 | US5964942 Diamond coating |
| 10/07/1999 | WO1999050895A1 Method of manufacturing semiconductor wafer |
| 10/07/1999 | WO1999050606A1 Substrate support for a thermal processing chamber |
| 10/06/1999 | EP0946974A1 Forming a crystalline semiconductor film on a glass substrate |
| 10/06/1999 | EP0946795A1 Gemstones formed of silicon carbide with diamond coating |
| 10/06/1999 | EP0946782A1 Chemical vapor deposition apparatus |
| 10/06/1999 | EP0871803B1 PEROVSKITE WITH AO*(ABO3)n LAYER |
| 10/05/1999 | US5963822 Method of forming selective epitaxial film |
| 10/05/1999 | US5961725 Conical baffle for semiconductor furnaces |
| 10/05/1999 | US5961719 Nucleation of diamond films using an electrode |
| 10/05/1999 | US5961718 Process for selectively depositing diamond films |
| 10/05/1999 | US5961717 Synthesis of phosphorus-doped diamond |
| 10/05/1999 | US5961323 Dual vertical thermal processing furnace |
| 09/30/1999 | WO1999001593A3 Elimination of defects in epitaxial films |
| 09/30/1999 | DE19913123A1 Vapor phase crystal growth of bismuth-strontium-calcium-copper oxide thin film useful as a superconductor material |
| 09/28/1999 | US5958599 Structures having enhanced biaxial texture |
| 09/28/1999 | US5958358 Fullerene-like or nanotube structure of transition metal chalcogenide |
| 09/28/1999 | US5958155 High speed sputter deposition of magnesium difluoride antireflection thin film onto optical substrate |
| 09/28/1999 | US5958140 One-by-one type heat-processing apparatus |
| 09/23/1999 | WO1999047732A1 Apparatus for moving exhaust tube of barrel reactor |
| 09/23/1999 | WO1999039022A3 SUBSTRATE SUPPORT FOR SiC EPITAXY AND METHOD FOR PRODUCING AN INSERT FOR A SUSCEPTOR |
| 09/22/1999 | EP0807191B1 Method and device for protecting the susceptor during epitaxial growth by cvd |
| 09/22/1999 | CN1229445A Single crystal SiC and process for preparing the same |
| 09/21/1999 | US5955776 Spherical shaped semiconductor integrated circuit |
| 09/21/1999 | US5955146 Heating alkylmagnesium alkoxide; coating, evaporation, vapor deposition, sublimation, pyrolysis, decomposition |
| 09/21/1999 | US5954881 Ceiling arrangement for an epitaxial growth reactor |
| 09/16/1999 | WO1999046115A1 Tin oxide particles |
| 09/15/1999 | EP0942459A1 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
| 09/15/1999 | CN1045077C Tail gas recovery method and device in production of silicon carbide fibre |
| 09/14/1999 | USRE36295 Enables controlled growth of multicomponent metal oxide thin film including high temperature superconducting thin films which are uniform and reproducible using organometallic complexes as metal oxide source |
| 09/14/1999 | US5952059 Forming a piezoelectric layer with improved texture |
| 09/14/1999 | US5951896 Rapid thermal processing heater technology and method of use |
| 09/14/1999 | US5951774 Cold-wall operated vapor-phase growth system |
| 09/14/1999 | US5951757 Method for making silicon germanium alloy and electric device structures |
| 09/14/1999 | US5950723 Method of regulating substrate temperature in a low pressure environment |
| 09/08/1999 | EP0940845A2 Susceptor for semiconductor manufacturing equipment and process for producing the same |
| 09/08/1999 | CN1227968A Susceptor for semiconductor manufacturing equipment and process for producing the same |
| 09/07/1999 | US5948300 Process tube with in-situ gas preheating |
| 09/07/1999 | US5948162 Method for forming SOI structure |
| 09/02/1999 | WO1999043875A1 Epitaxial growth apparatus |
| 09/02/1999 | WO1999043874A1 Ceiling arrangement for an epitaxial growth reactor |
| 08/31/1999 | US5945737 Thin film or solder ball including a metal and an oxide, nitride, or carbide precipitate of an expandable or contractible element |
| 08/31/1999 | US5945725 Spherical shaped integrated circuit utilizing an inductor |
| 08/31/1999 | US5945690 Applying free radical particles to mask |
| 08/31/1999 | US5944891 Method for the heat treatment of ZnSe crystal |
| 08/31/1999 | US5944890 Crystallization with seeds to form single crystals fot protective coatings |
| 08/26/1999 | WO1999042282A1 A-site and/or b-site modified pbzrtio3 materials and films |
| 08/25/1999 | EP0605725B1 Apparatus for introducing gas, and apparatus and method for epitaxial growth |
| 08/24/1999 | US5942205 Heating particulate or fibrous titanium source, metal hydroxides, hydrous oxides of metals and composite metal oxides, inorganic acid salts, barium hydroxide in the presence of fusing agent and cooling |
| 08/24/1999 | CA2051554C Thin film deposition method |
| 08/24/1999 | CA2051529C Thin film deposition method for wafer |
| 08/18/1999 | EP0936661A2 Double wall reaction chamber glassware |
| 08/17/1999 | US5939149 Method of forming hydrogen-free diamond like carbon (DLC) films |
| 08/17/1999 | US5939140 Preheating mixed gases of hydrocarbon and hydrogen by heated metal body; carburization; high bonding strength |
| 08/17/1999 | US5938840 Method for vapor phase growth |
| 08/12/1999 | DE19803423A1 Substrathalterung für SiC-Epitaxie Substrate holder for SiC epitaxy |
| 08/11/1999 | EP0935015A1 Method for producing whisker-forming alumina and alumina fibers and composite piston of alumina fibers |
| 08/10/1999 | US5937316 SiC member and a method of fabricating the same |
| 08/10/1999 | US5937142 Multi-zone illuminator for rapid thermal processing |
| 08/10/1999 | US5935641 Method of forming a piezoelectric layer with improved texture |
| 08/10/1999 | US5935324 Apparatus and method for forming I-III-VI2 thin-film layers |
| 08/10/1999 | US5935283 Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
| 08/10/1999 | CA2261394A1 Double wall reaction chamber glassware |
| 08/05/1999 | WO1999039022A2 SUBSTRATE SUPPORT FOR SiC EPITAXY AND METHOD FOR PRODUCING AN INSERT FOR A SUSCEPTOR |
| 08/04/1999 | EP0933801A1 Process for depositing a monocrystalline Silicon region |
| 08/04/1999 | EP0933451A1 Film forming apparatus and method of forming a crystalline silicon film |
| 08/04/1999 | CN1224773A Method for supplying gas for epitaxial growth and its apparatus |
| 07/29/1999 | WO1999037655A1 Tantalum amide precursors for deposition of tantalum nitride on a substrate |
| 07/28/1999 | EP0931861A1 Method and apparatus for feeding a gas for epitaxial growth |
| 07/28/1999 | EP0931186A1 A device for epitaxially growing objects and method for such a growth |
| 07/28/1999 | CN1224085A Superhigh vacuum chemical vapor phase deposition epitoxy system |
| 07/27/1999 | US5930656 Forming dielectric passivation film over mixed metal nitride layer on substrate within same chemical reactor without contamination or oxidation; simplification |
| 07/27/1999 | US5928427 Apparatus for low pressure chemical vapor deposition |
| 07/27/1999 | US5928421 Method of forming gallium nitride crystal |
| 07/22/1999 | WO1999036588A1 Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
| 07/22/1999 | WO1999015333A9 Superconductor articles with epitaxial layers |
| 07/21/1999 | EP0930382A1 Process for obtaining a layer of single crystal germanium or silicon on single cystal silicon or germanium substrate respectively, and multilayer products thus obtained |
| 07/20/1999 | US5926726 In-situ acceptor activation in group III-v nitride compound semiconductors |
| 07/15/1999 | WO1999035311A1 In situ growth of oxide and silicon layers |
| 07/14/1999 | CN1223009A Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
| 07/13/1999 | US5921773 Wafer boat for a vertical furnace |
| 07/07/1999 | EP0723600B1 Process for the preparation of silicon carbide films using single organosilicon compounds |
| 07/06/1999 | US5920795 Method for manufacturing semiconductor device |
| 07/06/1999 | US5919305 Thick film semiconductor |
| 07/01/1999 | WO1999032686A1 Gas trap for cvd apparatus |
| 07/01/1999 | WO1999016941A8 Substrates for superconductors |
| 06/30/1999 | EP0926271A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 06/30/1999 | CN1221205A Semiconductor substrate and thin-film semiconductive member, and method for making thereof |
| 06/29/1999 | US5916369 Gas inlets for wafer processing chamber |
| 06/29/1999 | US5916365 Sequential chemical vapor deposition |
| 06/24/1999 | WO1999031306A1 Growth of very uniform silicon carbide epitaxial layers |
| 06/22/1999 | US5915194 Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
| 06/17/1999 | WO1999029925A1 Process for low temperature cvd using bi carboxylates |
| 06/16/1999 | CN1219985A Method and apparatus for growing oriented whisker arrays |
| 06/16/1999 | CN1219614A Method and installation for GaN growth by light radiation-heated metallic organic chemical gas-state deposition |
| 06/15/1999 | US5912473 Oligothiophene compound and polytetrafluoroethylene oriented film, polyphenylene vinylene |
| 06/10/1999 | WO1999015333A8 Superconductor articles with epitaxial layers |