Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
04/2002
04/18/2002WO2002001608A3 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
04/18/2002WO2001068954A3 Axial gradient transport apparatus and process
04/18/2002WO2001059814A3 Semiconductor structure
04/18/2002US20020045340 Method of manufacturing group iii-v compound semiconductor
04/18/2002US20020045009 Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate
04/18/2002US20020043338 Plasma etching apparatus and plasma etching method
04/18/2002US20020043208 Crystal growth method
04/17/2002EP1197997A1 Method for producing semiconductor crystal
04/17/2002EP1197996A2 A III nitride epitaxial wafer and usage of the same
04/17/2002EP1197995A2 A method for fabricating a III nitride film
04/17/2002EP1197994A1 Apparatus for manufacturing semiconductor device
04/17/2002EP1197993A1 Apparatus for manufacturing semiconductor device
04/17/2002EP1196645A1 Seal means and its application in deposition reactor
04/17/2002CN1344819A Method for manufacture of ferroelectric solid layer by using assistants
04/17/2002CN1344817A Chemical vapour deposition device and method
04/16/2002US6372981 Semiconductor substrate, solar cell using same, and fabrication methods thereof
04/16/2002US6372356 Compliant substrates for growing lattice mismatched films
04/16/2002US6372041 Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis
04/16/2002US6371712 Support frame for substrates
04/11/2002WO2002029131A1 Method for automatic organisation of microstructures or nanostructures and related device obtained
04/11/2002US20020042211 Decomposition of of organosilicon compound; heat treatment
04/11/2002US20020042206 Plasma etching apparatus and plasma etching method
04/11/2002US20020042192 Shower head, substrate treatment apparatus and substrate manufacturing method
04/11/2002US20020042191 Chemical vapor deposition apparatus and chemical vapor deposition method
04/11/2002US20020041931 Method for growing thin films
04/11/2002US20020040897 Thermal process apparatus for measuring accurate temperature by a radiation thermometer
04/11/2002DE10064944A1 Verfahren zum Abscheiden von insbesondere kristallinen Schichten, Gaseinlassorgan sowie Vorrichtung zur Durchführung des Verfahrens A method for depositing in particular crystalline layers, gas inlet element, and device for carrying out the method
04/11/2002DE10064941A1 Gaseinlassorgan Gas inlet element
04/10/2002EP1194950A1 Process for polycrystalline silicon film growth and apparatus for same
04/10/2002EP1002142B1 Method and apparatus for reducing deposition of contaminants
04/10/2002CN1344336A Prodn. of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
04/10/2002CN1082721C Mfg. method of semiconductor device
04/09/2002US6368733 ELO semiconductor substrate
04/09/2002US6368405 Apparatus for growing single crystal silicon and method for forming single crystal silicon layer using the same
04/09/2002US6368404 Induction heated chemical vapor deposition reactor
04/04/2002WO2002027078A1 Method for depositing, in particular, crystalline layers, a gas inlet element, and device for carrying out said method
04/04/2002US20020039806 Method for growing p-n homojunction-based structures utilizing HVPE techniques
04/04/2002US20020038689 Reduced and atmospheric pressure process capable epitaxial chamber
04/04/2002DE10045958A1 Unit introducing gas into and from plasma processing chamber has lines of identical flow resistance connecting between gas connection and chamber
04/03/2002EP1193331A2 Chemical vapor deposition apparatus and chemical vapor deposition method
04/03/2002CN1343266A Truncated susceptor for vapor-phase deposition
04/02/2002US6365461 Method of manufacturing epitaxial wafer
04/02/2002US6363626 Method and device for treating items stored in containers and storage apparatus equipped with such a device
03/2002
03/28/2002WO2002024985A1 Gas inlet mechanism for cvd-method and device
03/28/2002US20020037815 Production method of Nb3A1 superconducting multifilamentary wire
03/28/2002US20020035960 Silicon carbide film and method for manufacturing the same
03/28/2002DE10061398C1 Production of metallic strips for deposition of biaxially textured layers of superconductor material comprises forming alloy containing nickel, copper, silver or their alloys and additive, rolling, recrystallization annealing and annealing
03/27/2002EP1190122A1 Method and apparatus for epitaxially growing a material on a substrate
03/27/2002EP1190121A1 Truncated susceptor for vapor-phase deposition
03/27/2002EP1190120A1 Compound gas injection system and methods
03/27/2002EP0778838B1 Formation of a metalorganic compound for growing epitaxial metal or semiconductor layers
03/27/2002CN1342213A Processing chamber for atomic layer deposition processes
03/27/2002CN1081683C Epitaxial reactor
03/26/2002US6362494 Semiconductor device and method and apparatus for manufacturing semiconductor device
03/21/2002WO2002023603A1 Method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates
03/21/2002WO2002023594A2 Apparatus and method for reducing contamination on thermally processed semiconductor substrates
03/21/2002WO2002022921A2 Liquid gas exchanger
03/21/2002WO2002022919A2 Forming a single crystal semiconductor film on a non-crystalline surface
03/21/2002US20020034645 Effecting high frequency plasma chemical vapor deposition using a source gas comprising a silicon halide (silicon chloride or fluoride) and hydrogen forming a silicon thin film
03/21/2002US20020033521 Sapphire substrate, semiconductor device, electronic component, and crystal growing method
03/21/2002US20020033497 Haze-free BST films
03/21/2002US20020033480 Water cooled magnetron cathode; high speed sputtering; vacuum evaportaion
03/20/2002EP1188722A1 Article comprising a body made of quartz glass having improved resistance against plasma corrosion, and method for production thereof
03/20/2002EP0950132A4 CaTiO 3? INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR
03/19/2002US6358440 Antireflectlon coating film
03/19/2002US6358313 Method of manufacturing a crystalline silicon base semiconductor thin film
03/14/2002WO2002021599A2 Compound semiconductor multilayer structure and bipolar transistor using the same
03/14/2002WO2002020881A2 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
03/14/2002WO2002020880A1 Production of low defect epitaxial films
03/14/2002US20020031618 Sequential chemical vapor deposition
03/14/2002US20020030246 Structure and method for fabricating semiconductor structures and devices not lattice matched to the substrate
03/14/2002US20020030192 III-V compounds semiconductor device with an AIxByInzGa1-x-y-zN non continuous quantum dot layer
03/14/2002US20020030047 Heat treatment apparatus having a thin light-transmitting window
03/14/2002DE10043601A1 Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten Apparatus and method for depositing in particular crystalline layers on in particular crystalline substrates
03/14/2002DE10043600A1 Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren, insbesondere ebenfalls kristallinen Substraten Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates
03/14/2002DE10043599A1 Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten Device for depositing in particular crystalline layers on in particular also one or more crystalline substrates
03/14/2002DE10043597A1 Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesonder e kristallinen Substraten Device for depositing in particular crystalline layers on crystalline substrates insbesonder e
03/14/2002DE10041698A1 Verfahren zur Herstellung einer ferroelektrischen Festkörperschicht unter Verwendung eines Hilfsstoffes A method of manufacturing a ferroelectric solid state layer using an excipient
03/13/2002EP1185727A1 Sequential hydride vapor-phase epitaxy
03/12/2002US6355909 Method and apparatus for thermal processing of semiconductor substrates
03/12/2002US6355577 System to reduce particulate contamination
03/12/2002US6355107 Compound gas injection system
03/07/2002WO2002018680A1 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
03/07/2002WO2002018679A1 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
03/07/2002WO2002018678A1 Method for preparing single crystal oxide thin film
03/07/2002WO2002018672A1 Cvd coating device
03/07/2002WO2002018670A2 Cvd reactor with a gas outlet ring made of solid graphite
03/07/2002US20020029093 Method and apparatus for depositing a tantalum-containing layer on a substrate
03/07/2002US20020028565 Method for growing p-type III-V compound material utilizing HVPE techniques
03/07/2002US20020028564 Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate
03/07/2002US20020028291 Apparatus for fabricating a III-V nitride film and a method for fabricating the same
03/07/2002US20020026892 Impurity doping method for semiconductor as well as system therefor and semiconductor materials prepared thereby
03/07/2002DE10041285A1 Verfahren zur Epitaxie von (Indium, Aluminium, Gallium)-nitrid-Schichten auf Fremdsubstraten A process for the epitaxial growth of (indium, aluminum, gallium) nitride layers on foreign substrates
03/06/2002EP1184897A1 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
03/06/2002EP1184489A2 Impurity doping method for semiconductor as well as system therefor and semiconductor materials prepared thereby
03/06/2002EP1184488A2 An apparatus for fabricating a III-V nitride film and a method for fabricating the same
03/06/2002EP1183406A1 Sequential chemical vapor deposition
03/05/2002US6353210 Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
03/05/2002US6352884 Method for growing crystals having impurities and crystals prepared thereby
03/05/2002US6352594 Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors
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