| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
|---|
| 02/09/1999 | US5868850 Vapor phase growth apparatus |
| 02/09/1999 | US5868834 Thin film epitaxy using organic metal compound of group 2 element and hydride or metal compound of group 6 element and halide or halogen gas |
| 02/09/1999 | US5868833 Trichlorosilane and hydrogen gas under stoichiometric conditions to satisfy an equation; by-products chlorosilane and dichlorosilane are adsorbed on the surface to prevent the formation of corrosive hydrochloric acid |
| 02/03/1999 | EP0895288A2 Electrode line for semiconducor device and method of manufacturing it |
| 02/03/1999 | EP0894766A1 Boron-doped isotopic diamond and process for producing the same |
| 02/02/1999 | US5866198 Method of fabricating a compound semiconductor having a plurality of layers using a flow compensation technique |
| 02/02/1999 | US5866092 Mixed oxide of gallium, gadolinium and ytterbium |
| 02/02/1999 | US5865888 Semiconductor device epitaxial layer lateral growth rate control method using CBr4 |
| 01/28/1999 | WO1999004067A1 Inflatable elastomeric element for rapid thermal processing (rtp) system |
| 01/26/1999 | US5863604 The substrate being coated located in a zone proximate to the flame's end in an open-atmosphere environment |
| 01/26/1999 | US5863598 Method of forming doped silicon in high aspect ratio openings |
| 01/26/1999 | US5863324 Process for producing single crystal diamond film |
| 01/21/1999 | WO1999003308A1 Frequency selected, variable output inductor heater system and method |
| 01/21/1999 | WO1999002757A1 Reflective surface for cvd reactor walls |
| 01/21/1999 | WO1999002755A1 Chemical vapor deposition manifold |
| 01/21/1999 | WO1999002753A1 Apparatus and method for nucleation and deposition of diamond using hot-filament dc plasma |
| 01/19/1999 | US5862302 Thermal processing apparatus having a reaction tube with transparent and opaque portions |
| 01/19/1999 | US5861346 Heating the surface of a silicon substrate in the presence of c60 and silicon vapor in a hydrogen free environment; low temperature formation of thin films; hardness, low friction coefficient, strength, thermoconductivity |
| 01/19/1999 | US5861321 Immersing cadmium (zinc) telluride substrate in solution; diffusion of dopant, partial dissolving; gowing epitaxial layer from mercury cadmium telluride; annealing |
| 01/19/1999 | US5861135 Produced by vapor synthesis in the form of free-standing filmhaving excellent transparency |
| 01/19/1999 | US5861059 Mixing hydrogen with raw material gas such as disilane to control facet formation; adsorption, termination, reducing surface free energy and anisotropy |
| 01/19/1999 | US5860805 Effluent-gas-scavenger system for process tube, minimizing back diffusion and atmospheric contamination |
| 01/14/1999 | WO1999001595A1 Method and apparatus for growing thin films |
| 01/14/1999 | WO1999001594A1 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
| 01/14/1999 | WO1999001593A2 Elimination of defects in epitaxial films |
| 01/13/1999 | CN1204938A Furnace sidewall temperature control system |
| 01/12/1999 | US5859408 Apparatus for uniformly heating a substrate |
| 01/12/1999 | US5858471 Selective plasma deposition |
| 01/12/1999 | US5858465 Combustion chemical vapor deposition of phosphate films and coatings |
| 01/12/1999 | US5858100 Substrate holder and reaction apparatus |
| 01/12/1999 | US5858086 Growth of bulk single crystals of aluminum nitride |
| 01/07/1999 | WO1999000532A1 Gas injection system for plasma processing apparatus |
| 01/07/1999 | WO1999000531A1 Method and apparatus for reducing deposition of contaminants |
| 01/05/1999 | US5856652 Radiant heating apparatus and method |
| 01/05/1999 | US5855956 Condensation of hydrolyzed precursor reacted with water vapor mixed with a volatile organometallic compound; annealing |
| 01/05/1999 | US5855680 Apparatus for growing thin films |
| 01/05/1999 | US5855669 Method for fabricating grating coupler |
| 01/05/1999 | CA2069694C Device for introducing reagents into an organometallic vapour phase deposition apparatus |
| 12/30/1998 | WO1998059099A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 12/29/1998 | US5854495 Preparation of nucleated silicon surfaces |
| 12/29/1998 | US5853607 CVD processing chamber |
| 12/29/1998 | US5853478 Method for forming crystal and crystal article obtained by said method |
| 12/29/1998 | US5853477 Manufacture of transition metal carbide, nitride and carbonitride whiskers |
| 12/23/1998 | WO1998058099A1 Method for producing coated workpieces, uses and installation for the method |
| 12/23/1998 | EP0885859A2 Member for semiconductor equipment |
| 12/22/1998 | US5851905 Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows |
| 12/22/1998 | US5851297 Method and apparatus for preparing crystalline thin-films for solid-state lasers |
| 12/22/1998 | US5851285 Manufacture of transition metal carbide, nitride, and carbonitride whiskers containing two or more transition metals |
| 12/22/1998 | US5850853 Fluid control system and valve to be used therein |
| 12/22/1998 | CA2097472C Method for the manufacture of large single crystals |
| 12/17/1998 | WO1998056966A1 Corner cube arrays and manufacture thereof |
| 12/16/1998 | EP0884406A1 Furnace sidewall temperature control system |
| 12/15/1998 | US5849413 Oriented diamond film structures on nondiamond substrates |
| 12/15/1998 | US5849228 Segmented substrate for improved arc-jet diamond deposition |
| 12/15/1998 | US5849079 Diamond film growth argon-carbon plasmas |
| 12/15/1998 | US5849078 Method for growing single-crystalline semiconductor film and apparatus used therefor |
| 12/15/1998 | US5849077 Process for growing epitaxial silicon in the windows of an oxide-patterned wafer |
| 12/15/1998 | US5849076 Cooling system and method for epitaxial barrel reactor |
| 12/10/1998 | WO1998056046A1 THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES A3B5 OF p- AND n-TYPE ELECTRIC CONDUCTIVITY |
| 12/09/1998 | CN1201081A Method for preparing gallium nitride crystal |
| 12/09/1998 | CN1041119C SOI integrated circuit chip material containing diamond film and making technology |
| 12/08/1998 | US5846320 Method for forming crystal and crystal article obtained by said method |
| 12/08/1998 | US5846275 Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
| 12/03/1998 | WO1998054381A1 Secondary edge reflector for horizontal reactor |
| 12/02/1998 | EP0881667A2 A method for manufacturing compound semiconductor epitaxial wafer |
| 12/02/1998 | EP0881662A1 Plasma processing apparatus and plasma processing method |
| 12/02/1998 | EP0779859A4 Oriented crystal assemblies |
| 12/01/1998 | US5844205 Heated substrate support structure |
| 12/01/1998 | US5843234 Method and apparatus for aiming a barrel reactor nozzle |
| 12/01/1998 | US5843233 Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus |
| 12/01/1998 | US5843227 Crystal growth method for gallium nitride films |
| 11/26/1998 | WO1998053125A1 Single crystal silicon carbide and process for preparing the same |
| 11/25/1998 | EP0879904A1 Method and apparatus for producing single-crystalline diamond |
| 11/24/1998 | US5840368 Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films |
| 11/24/1998 | US5840125 Rapid thermal heating apparatus including a substrate support and an external drive to rotate the same |
| 11/24/1998 | US5840124 For mounting wafers in epitaxial reactor |
| 11/24/1998 | CA2104141C Synthesis of diamond by combustion method |
| 11/19/1998 | WO1998051844A1 Co-rotating edge ring extension for use in a semiconductor processing chamber |
| 11/19/1998 | WO1998051843A1 A method and apparatus for achieving temperature uniformity of a substrate |
| 11/17/1998 | US5837056 Method for growing III-V group compound semiconductor crystal |
| 11/12/1998 | WO1998050606A1 Vertical furnace for the treatment of semiconductor substrates |
| 11/12/1998 | DE19743296C1 Open structure, especially photonic crystal production |
| 11/11/1998 | EP0852575A4 Silicon nitride nanowhiskers and method of making same |
| 11/10/1998 | US5834374 Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates |
| 11/10/1998 | US5834372 Pretreatment of semiconductor substrate |
| 11/10/1998 | US5834059 Semiconductors |
| 11/10/1998 | US5833888 Weeping weir gas/liquid interface structure |
| 11/10/1998 | US5833754 Deposition apparatus for growing a material with reduced hazard |
| 11/10/1998 | US5833749 Compound semiconductor substrate and process of producing same |
| 11/03/1998 | US5830538 Vapor deposition; emiconductors |
| 11/03/1998 | US5830270 Electrons |
| 10/28/1998 | EP0873575A1 Device for producing oxidic thin films |
| 10/27/1998 | US5827571 Hot-wall CVD method for forming a ferroelectric film |
| 10/22/1998 | WO1998047170A1 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
| 10/22/1998 | WO1998046812A1 Process for obtaining diamond layers by gaseous-phase synthesis |
| 10/21/1998 | EP0871804A1 Rotatable susceptor with integrated ferromagnetic element |
| 10/20/1998 | US5824368 From seed crystals and fullerenes, low temperature and pressure |
| 10/20/1998 | US5824151 N dopant, group iii and v semiconductor laser or diode, crystallization |
| 10/20/1998 | CA2100132C Method of producing synthetic diamond |
| 10/15/1998 | WO1998045501A1 Method of manufacturing a semiconductor device and a device for applying such a method |