Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
12/1996
12/19/1996DE19622322A1 Vapour phase growth appts.
12/18/1996EP0748881A1 Thin-film vapor deposition apparatus
12/17/1996US5584936 Susceptor for semiconductor wafer processing
12/11/1996EP0747503A1 Reactant gas injector for chemical vapor deposition apparatus
12/10/1996US5583205 Metalorganic chemical vapor deposition method for depositing f-series metal or nitrogen and metal amides for use in mocvd
12/10/1996US5582641 Crystal article and method for forming same
12/08/1996CA2154048A1 Wafer support structure for a wafer backplane with a curved surface
12/04/1996EP0746009A1 Multi-layer susceptor for rapid thermal process reactors
12/04/1996EP0745707A1 Method for the growth of large single crystals
12/04/1996CN1137296A Apparatus for heating or cooling wafers
12/03/1996US5580388 Multi-layer susceptor for rapid thermal process reactors
12/03/1996US5580382 Epitaxial crystallization of group iii-v compound layer onto heated substrate, supplying high incorporation efficiency dopant to reactor
12/03/1996US5580381 Method of forming crystal
12/03/1996US5580380 Electrically biasing projections; exposure to hydrocarbon plasma
11/1996
11/28/1996WO1996037744A1 Apparatus and method for batch thermal conditioning of substrates
11/28/1996WO1996037640A1 Ultra-low pressure metal-organic vapor phase epitaxy (movpe) method of producing ii-vi semiconductor compounds
11/28/1996WO1996037639A2 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
11/28/1996CA2195988A1 Ultra-low pressure metal-organic vapor phase epitaxy (movpe) method of producing ii-vi semiconductor compounds
11/27/1996EP0744474A1 Chemical vapor deposition reactor and method of producing oxide superconductive conductor using the same
11/26/1996US5578521 Gallium arsenide
11/26/1996US5578132 Apparatus for heat treating semiconductors at normal pressure and low pressure
11/26/1996CA2124052C Liquid indium source
11/20/1996EP0743379A1 Apparatus for vapor-phase epitaxial growth
11/20/1996EP0743377A1 Apparatus for chemical surface treatment of flat substrate using active gas
11/19/1996US5576107 Diamond crystal and method for forming the same
11/19/1996US5576059 Using a preheat ring barrier; low pressure vapor deposition
11/13/1996EP0742582A2 Doping procedure for semiconductor growth processes
11/12/1996US5574958 Hydrogen radical producing apparatus
11/12/1996US5573862 Single crystal oxide turbine blades
11/12/1996US5573592 Gallium nitride
11/05/1996US5572725 Epitaxially strengthened single crystal aluminum garnet reinforcement fibers
11/05/1996US5571603 Single crystal diamond, surface acoustic wave device
11/05/1996US5571010 Heat treatment method and apparatus
10/1996
10/30/1996EP0739250A1 Using lasers to fabricate coatings on substrates
10/30/1996CN1134606A Determination of critical film thickness of compound semiconductor layer, and method for manufacturing semiconductor device using the method of determination
10/30/1996CN1134604A Producing method for semiconductor device
10/29/1996US5569953 Algaas
10/23/1996EP0738789A2 Susceptor and baffle therefor
10/22/1996US5567152 Heat processing apparatus
10/17/1996WO1996032201A1 Structures having enhanced biaxial texture and method of fabricating same
10/16/1996EP0737258A1 Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films
10/15/1996US5565382 Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas
10/09/1996EP0736614A2 Method and apparatus for producing semiconductor device
10/09/1996CN1132803A Film forming method and device
10/08/1996US5562770 Semiconductor manufacturing process for low dislocation defects
10/08/1996US5562769 Microelectronics with diamond layer single crystal structure semiconductors
10/03/1996WO1996030570A1 Carbide nanofibrils and method of making same
10/03/1996WO1996030564A1 Method and apparatus for configuring an epitaxial reactor for reduced set-up time and improved layer quality
10/01/1996US5560745 Oriented particles in hard surfaces
10/01/1996CA2000457C Process for making silicon nitride whisker
09/1996
09/26/1996WO1996029441A2 High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition
09/26/1996DE19510318A1 Epitaxial growth of cpd. semiconductor layers, esp. Gp=III nitride layers, on substrate
09/25/1996EP0733721A1 Process and apparatus for producing oxide films and chemical vapor deposition
09/25/1996EP0733130A1 Apparatus for heating or cooling wafers
09/25/1996EP0649480A4 Semimetal-semiconductor heterostructures and multilayers.
09/24/1996US5558717 CVD Processing chamber
09/19/1996DE19510853A1 Semiconductor prodn. esp. gas phase epitaxy appts.
09/18/1996EP0732729A2 Plasma processing apparatus and plasma processing method
09/18/1996EP0732429A1 Method of growing multilayer crystal films by metal organic vapor phase epitaxy
09/17/1996US5556706 Conductive layered product and method of manufacturing the same
09/17/1996US5556472 Film deposition apparatus
09/17/1996US5556462 Growth method by repeatedly measuring flux in MBE chamber
09/11/1996EP0731492A2 Method of growing a single crystal thin film with a uniform thickness, in the vapor phase
09/11/1996EP0731188A2 Apparatus and method for depositing films on substrate via off-axis laser ablation
09/11/1996EP0730679A1 An epitaxial reactor, susceptor and gas-flow system
09/10/1996US5554415 Vaporization with lasers; coating
09/10/1996US5554220 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
09/08/1996CA2171126A1 Apparatus and method for depositing films on substrate via off-axis laser ablation
09/06/1996WO1996026910A1 Novel silicon carbide dummy wafer
09/06/1996CA2188290A1 Novel silicon carbide dummy wafer
09/04/1996EP0730292A1 Method of growing semiconductor crystal and semiconductor fabricating apparatus
09/04/1996EP0730048A1 Method for vapor-phase growth of single crystal silicon
09/03/1996US5552327 Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy
09/03/1996US5551982 Semiconductor wafer process chamber with susceptor back coating
08/1996
08/29/1996WO1996026306A1 Process of diamond growth from c¿70?
08/29/1996WO1996017969A3 Method and equipment for growing thin films
08/29/1996CA2213316A1 Process of diamond growth from c70
08/27/1996US5550351 Process and apparatus for contamination-free processing of semiconductor parts
08/27/1996US5549971 Laser assisted fiber growth
08/27/1996US5549951 Composite ultrafine particles of nitrides, method for production and sintered article thereof
08/27/1996US5549747 Method of producing sheets of crystalline material and devices made therefrom
08/20/1996US5547897 Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine
08/20/1996US5547512 Continuous atomspheric pressure CVD coating of fibers
08/20/1996US5546890 Cleaning by passing inert gases through component
08/20/1996US5546889 Multilayer film with polytetrafluoroethylene on a substrate and oligothiophene compound or a polyphenylene vinylene
08/13/1996US5544618 Apparatus for depositing a coating on a substrate
08/13/1996US5544617 Method for producing single crystal, and needle-like single crystal
08/13/1996US5544615 Synthesis and growth processes for zinc germanium diphosphide single crystals
08/08/1996WO1996023914A1 DEVICE FOR HEAT SHIELDING WHEN SiC IS GROWN BY CVD
08/08/1996WO1996023913A1 Method and device for protecting the susceptor during epitaxial growth by cvd
08/08/1996WO1996023912A1 DEVICE FOR EPITAXIALLY GROWING SiC BY CVD
08/06/1996US5542373 Method of manufacturing GaAs single crystals
08/01/1996DE19602634A1 Plasma chemical vapour deposition appts.
07/1996
07/31/1996EP0723600A1 Process for the preparation of silicon carbide films using single organosilicon compounds
07/31/1996EP0702775A4 Apparatus for thermal treatment of thin film wafer
07/31/1996CN1127804A Apparatus and method for preparing nitride single crystal film by gas phase epitaxy of metal organic compound
07/30/1996US5540904 Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity
07/30/1996US5540785 Fabrication of defect free silicon on an insulating substrate
07/30/1996US5540783 Apparatus for externally controlled closed-loop feedback digital epitaxy
07/30/1996US5540782 Heat treating apparatus having heat transmission-preventing plates
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