| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 02/28/2002 | WO2002017410A1 Fractal structure and method of forming it |
| 02/28/2002 | WO2002017369A1 Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device |
| 02/28/2002 | WO2002017368A1 Semiconductor polysilicon component and method of manufacture thereof |
| 02/28/2002 | WO2002017362A2 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 02/28/2002 | WO2002016679A1 Polycrystalline semiconductor material and method of manufacture thereof |
| 02/28/2002 | US20020025661 Multilayers of various electroconductivity; vapor deposition |
| 02/28/2002 | US20020025660 Growth of epitaxial semiconductor material with improved crystallographic properties |
| 02/28/2002 | US20020025594 Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same |
| 02/28/2002 | US20020025377 Method of producing a ferroelectric solid-state layer using an auxiliary substance |
| 02/28/2002 | US20020025374 Parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications |
| 02/27/2002 | EP1182697A2 Sapphire substrate, semiconductor device, electronic component, and crystal growing method |
| 02/27/2002 | EP1182282A1 Method of crystal growth, method of forming fine semiconductor structure, semiconductor device, and system |
| 02/27/2002 | EP1182276A2 Process for the production of a ferroelectric solid layer using an additive |
| 02/26/2002 | US6350666 Method and apparatus for producing group-III nitrides |
| 02/26/2002 | US6350644 Ferroelectric thin-film device and method for producing the same |
| 02/26/2002 | US6350311 Method for forming an epitaxial silicon-germanium layer |
| 02/26/2002 | US6349546 Liquid gas exchanger |
| 02/21/2002 | WO2002015279A1 A semiconductor isotope superlattice |
| 02/21/2002 | WO2001086034A3 Modified susceptor for use in chemical vapor deposition process |
| 02/21/2002 | WO2001068271A8 Controlling surface chemistry on solid substrates |
| 02/21/2002 | US20020022351 Method for the production of an epitaxially grown semiconductor wafer |
| 02/21/2002 | US20020022349 Semiconductor thin-film formation process, and amorphous silicon solar-cell device |
| 02/21/2002 | US20020022286 Method for growing p-n heterojunction-based structures utilizing HVPE techniques |
| 02/21/2002 | US20020022210 Wafer treatment chamber having thermal reflector |
| 02/21/2002 | US20020022088 Purified silicon production system |
| 02/21/2002 | US20020022087 Mixing organometallic compound gases |
| 02/21/2002 | US20020020342 Silicon carbide single-crystals |
| 02/21/2002 | US20020020341 Semiconductor film with graded gallium nitride layer deposited on the substrate having a varying composition of a continuous grade from an initial to a final composition formed from a precursor without interruption in the supply |
| 02/20/2002 | EP1099007B1 Susceptor for barrel reactor |
| 02/20/2002 | EP1076732B1 Injector for reactor |
| 02/19/2002 | US6348096 Method for manufacturing group III-V compound semiconductors |
| 02/19/2002 | US6347749 Semiconductor processing reactor controllable gas jet assembly |
| 02/19/2002 | CA2198453C Metalorganic compounds |
| 02/14/2002 | WO2002013246A1 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide buffer layer |
| 02/14/2002 | WO2002013245A1 Method of controlling stress in gallium nitride films deposited on substrates |
| 02/14/2002 | WO2002012588A1 Gas collector for epitaxial reactor |
| 02/14/2002 | WO2002011980A1 Electronic and optical materials |
| 02/14/2002 | WO2001066832A3 Graded thin films |
| 02/14/2002 | WO2001043174A3 Fabrication of gallium nitride layers on textured silicon substrates |
| 02/14/2002 | US20020019149 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process |
| 02/14/2002 | US20020019117 Forming silicon layer, doping, and carbonization after formation of doped silicon substance; use as semiconductor device |
| 02/14/2002 | US20020019093 Barium strontium titanate, (Sr,Ba)TiO3 (BST) by supplying BST sources into a chamber; and inducing textured growth of the film over the substrate in a uniform desired crystal orientation; metal-organic chemical vapor deposition (MOCVD) |
| 02/14/2002 | US20020017650 III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layer |
| 02/14/2002 | US20020017534 Chemical delivery systems and methods of delivery |
| 02/14/2002 | US20020017244 Gas collector for epitaxial reactor |
| 02/13/2002 | EP1179621A1 N-type semiconductor diamond and its fabrication method |
| 02/13/2002 | EP1179620A1 Silicon carbide and method of manufacturing the same |
| 02/12/2002 | US6346477 Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt |
| 02/07/2002 | WO2002011187A2 Method and apparatus for depositing a tantalum-containing layer on a substrate |
| 02/07/2002 | WO2001065590A3 Esrf source for ion plating epitaxial deposition |
| 02/07/2002 | WO2001047002A3 Pendeoepitaxial gallium nitride layers grown on weak posts |
| 02/07/2002 | US20020016069 Method of forming substrate |
| 02/07/2002 | US20020015866 Method of growing a semiconductor layer |
| 02/07/2002 | US20020015852 Multilayer thin film and its fabrication process as well as electron device |
| 02/07/2002 | US20020014198 Silicon carbide and method for producing the same |
| 02/06/2002 | EP1178523A1 METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE |
| 02/06/2002 | EP1177153A1 Bulk synthesis of long nanotubes of transition metal chalcogenides |
| 02/06/2002 | EP1064418B1 Apparatus for moving exhaust tube of barrel reactor |
| 02/06/2002 | EP1012358B1 Inflatable elastomeric element for rapid thermal processing (rtp) system |
| 02/06/2002 | CN1334959A Device and method for handling substrates by means of self-levelling vacuum system in epitaxial induction reactors |
| 02/06/2002 | CN1334593A Method for mfg. semioconductor structure having crystalline alkaline earth metal oxide interface with silicon |
| 02/06/2002 | CN1334361A Method for preparing crystalline alkaline earth metal oxide on silicon substrate |
| 02/05/2002 | US6344631 Substrate support assembly and processing apparatus |
| 02/01/2002 | WO2001011116A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor |
| 02/01/2002 | CA2383400A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor |
| 01/31/2002 | WO2002009159A2 Thin-film metallic oxide structure and process for fabricating same |
| 01/31/2002 | WO2002009157A2 Alkali earth metal oxide gate insulators |
| 01/31/2002 | WO2002009150A2 Semiconductor structure for use with high-frequency signals |
| 01/31/2002 | WO2002008488A1 Method of growing a thin film onto a substrate |
| 01/31/2002 | US20020013042 Defect filter layer |
| 01/31/2002 | US20020012749 Method and apparatus for coating and/or treating substrates |
| 01/31/2002 | US20020011478 Hot wall rapid thermal processor |
| 01/31/2002 | US20020011463 Isotropic dry cleaning process for noble metal integrated circuit structures |
| 01/31/2002 | DE10125929A1 Verfahren zur Herstellung eines Nb¶3¶Al-supraleitenden Mehrfaserdrahtes A method for producing a Nb¶3¶Al superconducting multifilamentary wire |
| 01/29/2002 | US6342277 Sequential chemical vapor deposition |
| 01/24/2002 | WO2002007193A1 Method for heating a semiconductor wafer in a process chamber, and process chamber |
| 01/24/2002 | WO2000033365A8 Fabrication of gallium nitride layers by lateral growth |
| 01/24/2002 | US20020008234 Mixed-signal semiconductor structure, device including the structure, and methods of forming the device and the structure |
| 01/24/2002 | DE10033940A1 Epitaxial semiconductor layer formation method uses heating to pre-bake temperature before chemical vapor deposition at lower deposition temperature |
| 01/23/2002 | EP1173632A1 Reaction chamber for an epitaxial reactor |
| 01/23/2002 | CN1332480A Single-crystal GaN base and its manufacture |
| 01/23/2002 | CN1332267A Method and device for deposition of high melting metal layer using continuous deposition technology |
| 01/22/2002 | US6340769 Structures with iridium reagents and heterocyclic lewis bases |
| 01/22/2002 | US6340393 Method for synthesizing n-type diamond having low resistance |
| 01/22/2002 | US6340098 Chemical delivery systems and methods of delivery |
| 01/22/2002 | CA2253136C Single crystal sic and a method of producing the same |
| 01/22/2002 | CA2252980C Single crystal sic and a method of producing the same |
| 01/17/2002 | WO2002005323A2 Thermally processing a substrate |
| 01/17/2002 | WO2002005296A1 Ultraviolet-transparent conductive film and process for producing the same |
| 01/17/2002 | US20020005593 Growth of GaN with a low density of structural defects using an interlayer |
| 01/17/2002 | US20020005519 Crystalline silicon semiconductor device and method for fabricating same |
| 01/17/2002 | US20020005514 Low threading dislocation density relaxed mismatched epilayers without high temperature growth |
| 01/17/2002 | US20020005252 Plasma etching apparatus and plasma etching method |
| 01/17/2002 | US20020005170 Method of forming diamond film and film-forming apparatus |
| 01/16/2002 | EP1172464A1 Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate |
| 01/16/2002 | EP1171376A1 Chemical delivery systems and methods of delivery |
| 01/15/2002 | US6339016 Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
| 01/15/2002 | US6339014 Aluminum-and/or gallium nitride at growth temperature greater than 900 degrees; n-type junctions doped with arsenic, phosphorus or compounds, such as arsene or phosphine |
| 01/15/2002 | US6338756 In-situ post epitaxial treatment process |
| 01/10/2002 | WO2002003443A1 Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |