Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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02/17/1998 | US5718761 Providing nucleation and non-nucleation surfaces; vapor deposition from reaction mixture of organometallic compounds |
02/17/1998 | US5718574 Heat treatment apparatus |
02/12/1998 | WO1998005807A1 CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR |
02/11/1998 | EP0823498A1 Process for producing a heavily nitrogen doped ZnSe crystal |
02/11/1998 | EP0823492A2 Zone heating system with feedback control |
02/11/1998 | EP0823491A2 Gas injection system for CVD reactors |
02/10/1998 | US5716908 Process for controlling crystalline orientation of oxide superconductive film |
02/10/1998 | US5716450 Growing method of gallium nitride related compound semiconductor crystal and gallium nitride related compound semiconductor device |
02/04/1998 | EP0822274A2 Method for manufacturing epitaxial wafer |
02/04/1998 | EP0660886B1 Growing a nitrogen doped epitaxial ii-vi compound layer on a single crystal substrate |
02/04/1998 | CN1037283C Apparatus and method for preparing nitride single crystal film by gas phase epitaxy of metal organic compound |
01/28/1998 | EP0821085A1 Apparatus for introducing gas into a rapid thermal processing chamber |
01/28/1998 | EP0821084A1 Multi-zone gas flow control in a process chamber |
01/27/1998 | US5712001 Chemical vapor deposition process for producing oxide thin films |
01/27/1998 | US5711813 Epitaxial crystal growth apparatus |
01/27/1998 | US5711811 Method and equipment for growing thin films |
01/22/1998 | WO1998002027A2 Method for producing diamond films using a vapour-phase synthesis system |
01/21/1998 | EP0819785A1 A method of suppressing convection in a fluid in a cylindrical vessel |
01/21/1998 | EP0689618A4 Method and apparatus for the combustion chemical vapor deposition of films and coatings |
01/21/1998 | CN1170784A Method and apparatus for aiming barrel reactor nozzle |
01/21/1998 | CN1170775A Equipment for treating bottom materials |
01/20/1998 | US5710407 Rapid thermal processing apparatus for processing semiconductor wafers |
01/20/1998 | US5709745 Compound semi-conductors and controlled doping thereof |
01/20/1998 | US5709543 Vertical heat treatment apparatus |
01/20/1998 | US5709519 Plasma processing apparatus |
01/14/1998 | EP0818807A2 Dual vertical thermal processing furnace |
01/14/1998 | EP0818565A2 Gas supplying apparatus and vapor-phase growth plant |
01/14/1998 | EP0817874A1 Carbide nanofibrils and method of making same |
01/14/1998 | CN1170048A Method and apparatus for forming a coating on the surface of at least one substrate |
01/13/1998 | US5708755 Rapid thermal heating apparatus and method |
01/08/1998 | WO1998000857A1 Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon |
01/08/1998 | WO1998000587A1 Method for producing high-purity crystalline compounds and device for realising the same |
01/08/1998 | WO1998000576A1 Apparatus and method for high density plasma chemical vapor deposition |
01/08/1998 | DE19728310A1 Epitaxial wafer production apparatus |
01/07/1998 | EP0817283A1 Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor |
01/06/1998 | US5705423 Epitaxial wafer |
01/06/1998 | US5705224 Mixing hydride gas, adsorption and applying pulsation of light from flash lamp and decomposition |
01/06/1998 | US5704985 Device and a method for epitaxially growing objects by CVD |
01/06/1998 | US5704976 High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma |
01/06/1998 | US5704975 Metalorganic vapor phase epitaxial growth, hcl |
12/30/1997 | US5702822 Method for producing single crystal, and needle-like single crystal |
12/30/1997 | US5702532 MOCVD reactor system for indium antimonide epitaxial material |
12/29/1997 | EP0814176A2 Method and apparatus for depositing diamond film |
12/29/1997 | EP0706425A4 Selective plasma deposition |
12/24/1997 | WO1997048499A1 GaAs SUBSTRATE WITH A PASSIVATING EPITAXIAL GALLIUM SULFIDE FILM AND METHODS FOR FORMING SAME |
12/23/1997 | US5700992 Zigzag heating device with downward directed connecting portions |
12/18/1997 | WO1997047789A1 Diamond film and process for preparing the same |
12/17/1997 | EP0813232A2 Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate |
12/11/1997 | WO1997047049A1 Series of layers and substrate-buffer system, and process for the production thereof |
12/11/1997 | WO1997046842A1 Vertical heat treatment device |
12/10/1997 | EP0811703A2 Apparatus for treatment of a substrate |
12/10/1997 | EP0811702A2 Method and apparatus for depositing a layer by CVD |
12/10/1997 | EP0811084A1 Process of diamond growth from c 70? |
12/09/1997 | US5695831 CVD method for forming a metallic film on a wafer |
12/09/1997 | US5695567 Susceptor for a device for epitaxially growing objects and such a device |
12/09/1997 | US5695556 Obtaining relationship between film thickness of compound semiconductor layer and photoluminescence intensity, designating as said critical film thickness the thickness where photoluminescence exhibits a peak |
12/07/1997 | CA2206232A1 Method and apparatus for depositing diamond film |
12/04/1997 | DE19621858A1 Schichtenfolge sowie Substrat-Puffer-System und Verfahren zur Herstellung derselben Layer sequence substrate and buffer system and process for producing same |
12/03/1997 | CN1166864A Method of forming diamond-like carbon film (DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cathodes |
12/02/1997 | US5693305 Efficient concurrent catalytic reactions of aluminum, nitrogen, alumina and carbon yield purity and preferred aspect ratios |
12/02/1997 | US5693189 Method and apparatus for supply of liquid raw material gas |
12/02/1997 | US5693139 Doping compound semiconductor single crystal layer by alternate introduction of source gases while growth chamber is being evacuated continuously |
11/27/1997 | WO1997044277A1 Polycrystalline silicon rod and process for preparing the same |
11/26/1997 | EP0808917A1 Apparatus and method for controlling the temperature of a wall of a reaction chamber |
11/25/1997 | US5690742 Susceptor for an epitaxial growth apparatus |
11/25/1997 | US5690737 Process for forming epitaxial BaF2 on GaAs |
11/19/1997 | EP0807191A1 Method and device for protecting the susceptor during epitaxial growth by cvd |
11/18/1997 | US5689614 Rapid thermal heating apparatus and control therefor |
11/18/1997 | US5688980 Organometallic lead precursor, in-situ synthesis thereof, lead-titanium based thin film using the same, and preparation method therefor |
11/18/1997 | US5688320 Reducing aluminum oxide in nitrogen atmosphere |
11/12/1997 | EP0806496A1 Method and apparatus for aiming a barrel reactor nozzle |
11/12/1997 | EP0806495A2 Metal-organic chemical vapor-phase deposition process |
11/12/1997 | CN1164759A Process for vapor phase epitaxy of compound semiconductor |
11/11/1997 | US5686351 Semimetal-semiconductor heterostructures and multilayers |
11/11/1997 | US5685906 Method and apparatus for configuring an epitaxial reactor for reduced set-up time and improved layer quality |
11/11/1997 | US5685905 Method of manufacturing a single crystal thin film |
11/06/1997 | WO1997041276A1 Low temperature chemical vapor deposition and etching apparatus and method |
11/06/1997 | DE19717565A1 CVD apparatus for efficient production of compound semiconductor thin film |
11/04/1997 | US5684309 Stacked quantum well aluminum indium gallium nitride light emitting diodes |
11/04/1997 | US5683940 Method of depositing a reflow SiO2 film |
11/04/1997 | US5683935 Method of growing semiconductor crystal |
11/04/1997 | US5683518 Rapid thermal processing apparatus for processing semiconductor wafers |
11/04/1997 | US5683173 Cooling chamber for a rapid thermal heating apparatus |
10/29/1997 | EP0802988A1 Method of forming diamond-like carbon film (dlc), dlc film formed thereby, use of the same, field emitter array and field emitter cathodes |
10/23/1997 | DE19615291A1 Selective epitaxial growth on structured silicon wafer |
10/21/1997 | US5679476 Epitaxial wafer and method of fabricating thereof |
10/21/1997 | US5679446 First layer having first thickness and low intrinsic stress, second layer having second thickness and high intrinsic stress |
10/21/1997 | US5679405 Method for preventing substrate backside deposition during a chemical vapor deposition operation |
10/21/1997 | US5679164 Molybdenum cylinder used to guide source gas; barrel within and spaced from cylinder; axially extending separation plate; flange |
10/21/1997 | US5678989 Heat treatment method using a vertical processing tube |
10/16/1997 | DE19622402C1 Substrate induction heating apparatus especially for CVD |
10/15/1997 | EP0801156A2 Process for vapor phase epitaxy of compound semiconductor |
10/15/1997 | EP0801148A1 Method and apparatus for forming amorphous silicon and polysilicon films with improved step coverage |
10/15/1997 | EP0800592A1 Method of producing boron-doped monocrystalline silicon carbide |
10/14/1997 | US5676869 Vertical heat treatment apparatus |
10/14/1997 | US5676752 Method of producing sheets of crystalline material and devices made therefrom |
10/09/1997 | WO1997037064A1 Method and apparatus for growing oriented whisker arrays |
10/09/1997 | WO1997036822A1 Method and apparatus for growing extended crystals |
10/08/1997 | CN2264191Y Multistation gas-phase synthetizing diamond film appts. |
10/08/1997 | CN1036078C Microwave enhanced CVD method for depositing carbon |