Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
02/1998
02/17/1998US5718761 Providing nucleation and non-nucleation surfaces; vapor deposition from reaction mixture of organometallic compounds
02/17/1998US5718574 Heat treatment apparatus
02/12/1998WO1998005807A1 CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR
02/11/1998EP0823498A1 Process for producing a heavily nitrogen doped ZnSe crystal
02/11/1998EP0823492A2 Zone heating system with feedback control
02/11/1998EP0823491A2 Gas injection system for CVD reactors
02/10/1998US5716908 Process for controlling crystalline orientation of oxide superconductive film
02/10/1998US5716450 Growing method of gallium nitride related compound semiconductor crystal and gallium nitride related compound semiconductor device
02/04/1998EP0822274A2 Method for manufacturing epitaxial wafer
02/04/1998EP0660886B1 Growing a nitrogen doped epitaxial ii-vi compound layer on a single crystal substrate
02/04/1998CN1037283C Apparatus and method for preparing nitride single crystal film by gas phase epitaxy of metal organic compound
01/1998
01/28/1998EP0821085A1 Apparatus for introducing gas into a rapid thermal processing chamber
01/28/1998EP0821084A1 Multi-zone gas flow control in a process chamber
01/27/1998US5712001 Chemical vapor deposition process for producing oxide thin films
01/27/1998US5711813 Epitaxial crystal growth apparatus
01/27/1998US5711811 Method and equipment for growing thin films
01/22/1998WO1998002027A2 Method for producing diamond films using a vapour-phase synthesis system
01/21/1998EP0819785A1 A method of suppressing convection in a fluid in a cylindrical vessel
01/21/1998EP0689618A4 Method and apparatus for the combustion chemical vapor deposition of films and coatings
01/21/1998CN1170784A Method and apparatus for aiming barrel reactor nozzle
01/21/1998CN1170775A Equipment for treating bottom materials
01/20/1998US5710407 Rapid thermal processing apparatus for processing semiconductor wafers
01/20/1998US5709745 Compound semi-conductors and controlled doping thereof
01/20/1998US5709543 Vertical heat treatment apparatus
01/20/1998US5709519 Plasma processing apparatus
01/14/1998EP0818807A2 Dual vertical thermal processing furnace
01/14/1998EP0818565A2 Gas supplying apparatus and vapor-phase growth plant
01/14/1998EP0817874A1 Carbide nanofibrils and method of making same
01/14/1998CN1170048A Method and apparatus for forming a coating on the surface of at least one substrate
01/13/1998US5708755 Rapid thermal heating apparatus and method
01/08/1998WO1998000857A1 Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon
01/08/1998WO1998000587A1 Method for producing high-purity crystalline compounds and device for realising the same
01/08/1998WO1998000576A1 Apparatus and method for high density plasma chemical vapor deposition
01/08/1998DE19728310A1 Epitaxial wafer production apparatus
01/07/1998EP0817283A1 Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor
01/06/1998US5705423 Epitaxial wafer
01/06/1998US5705224 Mixing hydride gas, adsorption and applying pulsation of light from flash lamp and decomposition
01/06/1998US5704985 Device and a method for epitaxially growing objects by CVD
01/06/1998US5704976 High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma
01/06/1998US5704975 Metalorganic vapor phase epitaxial growth, hcl
12/1997
12/30/1997US5702822 Method for producing single crystal, and needle-like single crystal
12/30/1997US5702532 MOCVD reactor system for indium antimonide epitaxial material
12/29/1997EP0814176A2 Method and apparatus for depositing diamond film
12/29/1997EP0706425A4 Selective plasma deposition
12/24/1997WO1997048499A1 GaAs SUBSTRATE WITH A PASSIVATING EPITAXIAL GALLIUM SULFIDE FILM AND METHODS FOR FORMING SAME
12/23/1997US5700992 Zigzag heating device with downward directed connecting portions
12/18/1997WO1997047789A1 Diamond film and process for preparing the same
12/17/1997EP0813232A2 Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate
12/11/1997WO1997047049A1 Series of layers and substrate-buffer system, and process for the production thereof
12/11/1997WO1997046842A1 Vertical heat treatment device
12/10/1997EP0811703A2 Apparatus for treatment of a substrate
12/10/1997EP0811702A2 Method and apparatus for depositing a layer by CVD
12/10/1997EP0811084A1 Process of diamond growth from c 70?
12/09/1997US5695831 CVD method for forming a metallic film on a wafer
12/09/1997US5695567 Susceptor for a device for epitaxially growing objects and such a device
12/09/1997US5695556 Obtaining relationship between film thickness of compound semiconductor layer and photoluminescence intensity, designating as said critical film thickness the thickness where photoluminescence exhibits a peak
12/07/1997CA2206232A1 Method and apparatus for depositing diamond film
12/04/1997DE19621858A1 Schichtenfolge sowie Substrat-Puffer-System und Verfahren zur Herstellung derselben Layer sequence substrate and buffer system and process for producing same
12/03/1997CN1166864A Method of forming diamond-like carbon film (DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cathodes
12/02/1997US5693305 Efficient concurrent catalytic reactions of aluminum, nitrogen, alumina and carbon yield purity and preferred aspect ratios
12/02/1997US5693189 Method and apparatus for supply of liquid raw material gas
12/02/1997US5693139 Doping compound semiconductor single crystal layer by alternate introduction of source gases while growth chamber is being evacuated continuously
11/1997
11/27/1997WO1997044277A1 Polycrystalline silicon rod and process for preparing the same
11/26/1997EP0808917A1 Apparatus and method for controlling the temperature of a wall of a reaction chamber
11/25/1997US5690742 Susceptor for an epitaxial growth apparatus
11/25/1997US5690737 Process for forming epitaxial BaF2 on GaAs
11/19/1997EP0807191A1 Method and device for protecting the susceptor during epitaxial growth by cvd
11/18/1997US5689614 Rapid thermal heating apparatus and control therefor
11/18/1997US5688980 Organometallic lead precursor, in-situ synthesis thereof, lead-titanium based thin film using the same, and preparation method therefor
11/18/1997US5688320 Reducing aluminum oxide in nitrogen atmosphere
11/12/1997EP0806496A1 Method and apparatus for aiming a barrel reactor nozzle
11/12/1997EP0806495A2 Metal-organic chemical vapor-phase deposition process
11/12/1997CN1164759A Process for vapor phase epitaxy of compound semiconductor
11/11/1997US5686351 Semimetal-semiconductor heterostructures and multilayers
11/11/1997US5685906 Method and apparatus for configuring an epitaxial reactor for reduced set-up time and improved layer quality
11/11/1997US5685905 Method of manufacturing a single crystal thin film
11/06/1997WO1997041276A1 Low temperature chemical vapor deposition and etching apparatus and method
11/06/1997DE19717565A1 CVD apparatus for efficient production of compound semiconductor thin film
11/04/1997US5684309 Stacked quantum well aluminum indium gallium nitride light emitting diodes
11/04/1997US5683940 Method of depositing a reflow SiO2 film
11/04/1997US5683935 Method of growing semiconductor crystal
11/04/1997US5683518 Rapid thermal processing apparatus for processing semiconductor wafers
11/04/1997US5683173 Cooling chamber for a rapid thermal heating apparatus
10/1997
10/29/1997EP0802988A1 Method of forming diamond-like carbon film (dlc), dlc film formed thereby, use of the same, field emitter array and field emitter cathodes
10/23/1997DE19615291A1 Selective epitaxial growth on structured silicon wafer
10/21/1997US5679476 Epitaxial wafer and method of fabricating thereof
10/21/1997US5679446 First layer having first thickness and low intrinsic stress, second layer having second thickness and high intrinsic stress
10/21/1997US5679405 Method for preventing substrate backside deposition during a chemical vapor deposition operation
10/21/1997US5679164 Molybdenum cylinder used to guide source gas; barrel within and spaced from cylinder; axially extending separation plate; flange
10/21/1997US5678989 Heat treatment method using a vertical processing tube
10/16/1997DE19622402C1 Substrate induction heating apparatus especially for CVD
10/15/1997EP0801156A2 Process for vapor phase epitaxy of compound semiconductor
10/15/1997EP0801148A1 Method and apparatus for forming amorphous silicon and polysilicon films with improved step coverage
10/15/1997EP0800592A1 Method of producing boron-doped monocrystalline silicon carbide
10/14/1997US5676869 Vertical heat treatment apparatus
10/14/1997US5676752 Method of producing sheets of crystalline material and devices made therefrom
10/09/1997WO1997037064A1 Method and apparatus for growing oriented whisker arrays
10/09/1997WO1997036822A1 Method and apparatus for growing extended crystals
10/08/1997CN2264191Y Multistation gas-phase synthetizing diamond film appts.
10/08/1997CN1036078C Microwave enhanced CVD method for depositing carbon