| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 06/13/2002 | US20020072245 Thin film of monocrystalline oxide formed on a bulk wafer monolithically integrated with a complementary metal oxide on a monocrystalline substrate and does not require cooling |
| 06/13/2002 | US20020069818 Manufacturing method of silicon carbide single crystals |
| 06/13/2002 | US20020069817 Semiconductors |
| 06/13/2002 | US20020069816 Exposing crystallographic planes in a face of silicon substrate; and growing hexagonal gallium nitride on crystallographic planes that are exposed |
| 06/13/2002 | DE10134806A1 Dampfphasenreaktionsvorrichtung mit Diaphragma für variable Stromverteilung Vapor phase reaction apparatus with diaphragm for variable power distribution |
| 06/13/2002 | DE10130240A1 Depositing semiconductor film on wafer used in production of semiconductor device comprises allowing gas to flow approximately horizontally to surface of wafer |
| 06/12/2002 | EP0917596B1 Method of manufacturing a semiconductor device and a device for applying such a method |
| 06/11/2002 | US6403926 Thermal processing apparatus having a coolant passage |
| 06/11/2002 | US6403925 System and method for thermal processing of a semiconductor substrate |
| 06/11/2002 | US6402850 Depositing polysilicon films having improved uniformity and apparatus therefor |
| 06/11/2002 | US6402849 Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device |
| 06/11/2002 | US6402836 Method for epitaxial growth on a substrate |
| 06/11/2002 | US6402806 Method for unreacted precursor conversion and effluent removal |
| 06/06/2002 | WO2002044445A1 Method for depositing especially, crystalline layers and device for carrying out the method |
| 06/06/2002 | WO2002044444A1 Method and apparatus for producing miiin columns and miiin materials grown thereon |
| 06/06/2002 | WO2002044443A1 Methods and apparatus for producing m'n based materials |
| 06/06/2002 | WO2002023594A3 Apparatus and method for reducing contamination on thermally processed semiconductor substrates |
| 06/06/2002 | WO2002020881A3 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor |
| 06/06/2002 | US20020068374 The GaN compound semiconductor layer to which the P type impurity is doped is irradiated with electromagnetic radiation of a predetermined wavelength to selectively agitate hydrogen bonds to dissociate H, and activate impurity |
| 06/06/2002 | US20020068201 Providing expitaxially compatible sacrificial template, depositing single crystal aluminum, gallium indium nitride material on template to form composite sacrificial template/nitride article, parting |
| 06/06/2002 | US20020068128 Mixing a substance liquid at the room temperature under the atmospheric pressure and a pressurized gas, causing resultant mixture to spout as a gas from a nozzle to generate a cluster which is a lumpy group of atoms or molecules |
| 06/06/2002 | US20020066408 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures |
| 06/06/2002 | US20020066403 Growing areas using a mask patterned on a substrate surface and growing a nitride in the growing areas, while forming facet structures |
| 06/05/2002 | EP1211715A2 A method for fabricating a IIIV nitride film |
| 06/04/2002 | US6399921 System and method for thermal processing of a semiconductor substrate |
| 06/04/2002 | US6399429 Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device |
| 06/04/2002 | US6399154 Laminate article |
| 06/04/2002 | US6398846 Gas purifier equipped with dual temperature detector which signals onset of exothermic reaction when high concentrations of impurities are present, inhibits formation of eutectic and shuts down column before breach of vessel |
| 05/30/2002 | WO2002043112A2 Method for making a substrate |
| 05/30/2002 | WO2001070005A3 Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials |
| 05/30/2002 | US20020062792 Wafer support device and reactor system for epitaxial layer growth |
| 05/29/2002 | EP1127176B1 Device for producing and processing semiconductor substrates |
| 05/29/2002 | DE10055182A1 CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter CVD reactor with a rotationally supported by a gas stream and substrate holder -angetriebenen |
| 05/28/2002 | US6395248 Reacting halogen-containing silane gas; adding hydrogen chloride and using heat of reaction generated by reaction with silicon |
| 05/28/2002 | US6395085 Purity silicon wafer for use in advanced semiconductor devices |
| 05/23/2002 | WO2002041378A2 Semiconductor structure and process for fabricating same |
| 05/23/2002 | WO2002040751A1 Method for manufacturing objective film, objective film obtained by the method, and laminated structure |
| 05/23/2002 | WO2001075188A3 Method of and apparatus for gas injection |
| 05/23/2002 | WO2001046498A3 Chemical vapor deposition reactor and process chamber for said reactor |
| 05/23/2002 | US20020062037 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor |
| 05/23/2002 | US20020061655 Method for fabricating a III nitride film |
| 05/23/2002 | US20020060319 Crystal thin film and production method therefor |
| 05/23/2002 | US20020059900 In-situ post epitaxial treatment process |
| 05/23/2002 | US20020059898 An offcut angle of from about 6 to about 10 degrees; superior morphological and material properties. |
| 05/23/2002 | US20020059882 Single crystal tungsten alloy penetrator and method of making |
| 05/23/2002 | DE10057134A1 Process for depositing crystalline layers onto crystalline substrates in a process chamber of a CVD reactor comprises adjusting the kinematic viscosity of the carrier gas mixed |
| 05/22/2002 | EP1207215A2 A method for fabricating a III-V nitride film and an apparatus for fabricating the same |
| 05/22/2002 | EP1206799A1 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
| 05/22/2002 | CN1350603A Sequential hydride vapor-phase epitaxy |
| 05/21/2002 | US6392257 Mutlilayer; silicon, silicon oxide, strontium titanate and gallium asenide layers |
| 05/21/2002 | US6391785 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
| 05/21/2002 | US6391112 Heat-exchanging workholder for a vacuum unit |
| 05/16/2002 | WO2002038840A1 Method and device for controlling the surface temperatures of substrates in a chemical vapour deposition reactor |
| 05/16/2002 | WO2002038839A1 Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow |
| 05/16/2002 | WO2002038838A1 Cvd reactor with graphite-foam insulated, tubular susceptor |
| 05/16/2002 | US20020058162 III nitride epitaxial wafer and usage of the same |
| 05/16/2002 | US20020056414 Apparatus for perpendicular-type ultra vacuum chemical vapor deposition |
| 05/16/2002 | US20020056412 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
| 05/16/2002 | US20020056411 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
| 05/16/2002 | DE10056029A1 Controlling surface temperature of substrates supported by carriers on dynamic gas cushions in process chamber of CVD reactor comprises varying gas stream producing gas cushions from average value of optically measured surface temperatures |
| 05/15/2002 | EP1205584A1 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
| 05/15/2002 | EP1205583A1 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
| 05/14/2002 | US6387712 Process for preparing ferroelectric thin films |
| 05/14/2002 | US6387185 Processing chamber for atomic layer deposition processes |
| 05/10/2002 | WO2001086034B1 Modified susceptor for use in chemical vapor deposition process |
| 05/09/2002 | US20020055080 Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device |
| 05/09/2002 | US20020053679 P-n heterojunction-based structures utilizing HVPE grown III-V compound layers |
| 05/09/2002 | US20020053395 Concentration of the dopant element in the titanium oxide film becomes progressively higher from the surface of the film to the surface of the silicon substrate; film production apparatus; use in making p-n junctions, solar cells |
| 05/09/2002 | US20020053316 Method of deposition of a single-crystal silicon region |
| 05/08/2002 | EP1203108A1 Cooled window |
| 05/08/2002 | DE10055033A1 Device for depositing crystalline layers onto crystalline substrates has a space between a reactor housing wall and a graphite tube filled with a graphite foam notched collar |
| 05/08/2002 | CN1348603A Fabrication of gallium nitride layers by lateral growth |
| 05/07/2002 | US6383288 Method of forming diamond film |
| 05/02/2002 | WO2002034669A1 Method and device for electronic cyclotron resonance plasma deposit of single-wall carbon nanotubes and resulting nanotubes |
| 05/02/2002 | US20020052060 Method for growing semiconductor layer and method for fabricating semiconductor light emitting elements |
| 05/02/2002 | EP1200652A1 Magnesium-doped iii-v nitrides & methods |
| 05/02/2002 | DE10047346A1 Silicon wafer used for depositing a thin film epitaxial layer in the production of bipolar high performance transistors has a specific resistance |
| 04/30/2002 | US6380108 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
| 04/30/2002 | US6380051 Growth promoting film is partially formed on a substrate having a portion which acts as a growth suppressing film on a surface thereof, and a nitride compound semiconductor film of a single crystal is grown thereon. |
| 04/30/2002 | US6379748 Tantalum amide precursors for deposition of tantalum nitride on a substrate |
| 04/25/2002 | WO2002033143A1 Vortex based cvd reactor |
| 04/25/2002 | US20020048964 Growth promoting film is partially formed on a substrate having a portion which acts as a growth suppressing film on a surface thereof, and a nitride compound semiconductor film of a single crystal is grown thereon. |
| 04/25/2002 | US20020048909 Process of vapor phase growth of nitride semiconductor |
| 04/25/2002 | US20020048311 Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using an in-situ wafer temperature optical probe |
| 04/25/2002 | US20020047143 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| 04/25/2002 | US20020047135 P-N junction-based structures utilizing HVPE grown III-V compound layers |
| 04/25/2002 | US20020047127 P-N homojunction-based structures utilizing HVPE grown III-V compound layers |
| 04/25/2002 | US20020047123 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| 04/25/2002 | US20020047004 System and method for thermal processing of a semiconductor substrate |
| 04/25/2002 | US20020046693 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
| 04/24/2002 | EP1199388A1 Group III nitride film containing aluminum with hexagonal system crystal structure |
| 04/24/2002 | EP0852575B1 Silicon nitride nanowhiskers and method of making same |
| 04/24/2002 | CN1346413A Compound gas injection system and methods |
| 04/23/2002 | US6376900 Single crystal SiC |
| 04/23/2002 | US6376339 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated thereby |
| 04/23/2002 | US6375768 Method for making biaxially textured articles by plastic deformation |
| 04/23/2002 | US6375749 Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth |
| 04/18/2002 | WO2002031891A1 Electrode and electron emission applications for n-type doped nanocrystalline materials |
| 04/18/2002 | WO2002031839A1 N-type doping of nanocrystalline diamond films with nitrogen and electrodes made therefrom |
| 04/18/2002 | WO2002030814A1 A process for the synthesis of nanotubes of transition metal dichalcogenides |