| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 08/01/2002 | US20020102847 MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications |
| 08/01/2002 | US20020102830 Method of manufacturing nitride semiconductor substrate |
| 08/01/2002 | US20020102819 Manufacturing method of compound semiconductor wafer |
| 08/01/2002 | US20020102818 Deposition methods and apparatuses providing surface activation |
| 08/01/2002 | US20020100413 Method for growing semiconductor epitaxial layer with different growth rates in selective areas |
| 07/31/2002 | EP1227176A2 Manufacturing method of compound semiconductor wafer |
| 07/31/2002 | EP1227175A2 Method of manufacturing nitride semiconductor substrate |
| 07/31/2002 | EP1226395A1 Hot wall rapid thermal processor |
| 07/31/2002 | EP1226292A1 Apparatus for growing epitaxial layers on wafers |
| 07/31/2002 | EP1226285A1 Single crystal tungsten alloy penetrator and method of making |
| 07/31/2002 | CN1088444C Polycrystalline silicon rod and producing method thereof |
| 07/30/2002 | US6426519 Epitaxial growth substrate and a method for producing the same |
| 07/30/2002 | US6426320 Controlling velocity |
| 07/30/2002 | US6426022 Process for producing thin film, thin film and optical instrument including the same |
| 07/30/2002 | US6425951 In situ passivation |
| 07/25/2002 | WO2002058120A1 Crystal film, crystal substrate, and semiconductor device |
| 07/25/2002 | US20020098346 Reacting substrate having a surface-exposed monolayer with a bifunctional reagent that reacts with exposed reactive group, producing coupling layer having exposed reactive group with which reactive group of selected compound can react |
| 07/25/2002 | US20020096674 Nucleation layer growth and lift-up of process for GaN wafer |
| 07/25/2002 | US20020096507 Heat treatment method and heat treatment apparatus |
| 07/25/2002 | US20020096104 Single crystal SiCand method of producing the same as well as SiC semiconductor device and SiC composite material |
| 07/24/2002 | EP1225257A2 Single crystal SiC and method of producing the same as well as SiC semiconductor device and SiC composite material |
| 07/24/2002 | EP1225256A2 Method for fabricating III-V compound semiconductor |
| 07/24/2002 | EP1224691A1 Device and method for handling substrates by means of a self-levelling vacuum system in epitaxial induction reactors |
| 07/24/2002 | CN1360090A Graphite boat with mother liquid remover for light-phase epitaxial growth of Te-Cd-Hg film |
| 07/23/2002 | US6423400 Electrostatic chucks formed by lamination of aluminum nitride with high melting metals and an adhesive layer, for coating silicon wafers; corrosion resistance |
| 07/18/2002 | WO2002056417A2 Tunable structure utilizing a compliant substrate |
| 07/18/2002 | WO2002043112A3 Method for making a substrate |
| 07/18/2002 | US20020094682 Reactor and a susceptorr is coated with an aluminum gallium indium nitride, which is heated to >/= 1000 degress C to generate chemical vapor deposition between a III and a V raw material gases |
| 07/18/2002 | US20020094502 Substrate processing apparatus and method for manufacturing semiconductor device |
| 07/18/2002 | US20020093055 Epitaxial base substrate and epitaxial substrate |
| 07/18/2002 | DE10164603A1 Production of an iron nitride thin layer used in the production of magnetic heads comprises forming an iron nitride epitaxial layer on a substrate by reacting a vaporized iron |
| 07/17/2002 | EP1223234A2 Epitaxial base substrate and epitaxial substrate |
| 07/16/2002 | US6420283 Crystallization of nitrides layers on synthetic mica substrates |
| 07/16/2002 | US6420092 Low dielectric constant nanotube |
| 07/11/2002 | WO2002054467A2 Semiconductor structure including a monocrystalline conducting layer |
| 07/11/2002 | US20020090589 Method of adhering wafer and wafer adhering device |
| 07/11/2002 | US20020088389 High throughput epitaxial growth by chemical vapor deposition |
| 07/10/2002 | EP1221178A1 Method for depositing nanolaminate thin films on sensitive surfaces |
| 07/10/2002 | EP1221177A1 Conformal lining layers for damascene metallization |
| 07/09/2002 | US6417077 Edge growth heteroepitaxy processes with reduced lattice mismatch strain between a deposited semiconductor material and a semiconductor substrate |
| 07/09/2002 | US6416578 Silicon carbide film and method for manufacturing the same |
| 07/04/2002 | WO2002052643A2 Semiconductor wafer manufacturing process |
| 07/04/2002 | WO2002052069A1 Method for depositing especially crystalline layers |
| 07/04/2002 | US20020086534 Providing template having epitaxial-initiating growth surface; sputtering Group III metal target to produce Group III metal source vapor; mixing with nigrogen-containing gas vapors; depositing to produce single-crystal Group III metal nitride |
| 07/04/2002 | US20020084261 Heat treatment apparatus and method of manufacturing a semiconductor device |
| 07/04/2002 | US20020083899 Film-forming device with a substrate rotating mechanism |
| 07/04/2002 | DE10064942A1 Verfahren zum Abscheiden insbesondere kristalliner Schichten A method for depositing in particular crystalline layers |
| 07/03/2002 | EP1220569A2 Heating device assembly and method |
| 07/03/2002 | EP1220320A1 Sigec semiconductor crystal and production method thereof |
| 07/03/2002 | EP1220305A1 CVD process |
| 07/03/2002 | EP1218573A1 Method and device for depositing materials with a large electronic energy gap and high binding energy |
| 07/03/2002 | EP1218572A1 Method and apparatus for growing silicon carbide crystals |
| 07/02/2002 | US6414338 n-Type diamond and method for producing same |
| 07/02/2002 | US6414280 Heat treatment method and heat treatment apparatus |
| 07/02/2002 | US6413627 Freestanding, transparent gallium nitride; distortion-free; low concentration of arsenic and carbon-free; low cost; for use in light emitting diodes |
| 07/02/2002 | US6413312 P-type nitride iii-v, such as gallium nitride; metal organic chemical vapor deposition using an arylalkyl hydrazine nitrogen source which does not release hydrogen; high carrier concentration; no annealing; light emitting diodes; lasers |
| 07/02/2002 | US6413081 Method for purging a furnace and furnace assembly |
| 07/02/2002 | US6412821 Device for the vacuum-tight connecting of two bodies of different materials |
| 06/27/2002 | WO2002050880A1 Vapor growth method, semiconductor producing method, and production method for semiconductor device |
| 06/27/2002 | WO2002050875A2 Heating configuration for use in thermal processing chambers |
| 06/27/2002 | WO2002022921A3 Liquid gas exchanger |
| 06/27/2002 | US20020081858 Process for manufacturing a semiconductor device |
| 06/27/2002 | US20020081463 Aluminum-including III nitride film which is suitable for a light-emitting diode or a high speed integrated circuit chip |
| 06/27/2002 | US20020081374 Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic |
| 06/27/2002 | US20020078882 Apparatus for forming an epitaxial silicon wafer with a denuded zone |
| 06/27/2002 | US20020078881 Sputtering a group III metal in a nitrogen or ammonia environment and depositing it on a growth surface |
| 06/27/2002 | DE10061399C1 Single layer or multiple layer metal strip used for epitaxial coating with a biaxially textured layer made from high temperature superconducting material consists of a base material made from nickel, copper, silver or their alloys |
| 06/26/2002 | EP1216106A1 Improved apparatus and method for growth of a thin film |
| 06/26/2002 | CN1355331A Uniform heat-field array method for growing diamond film tubes |
| 06/25/2002 | US6410347 Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry |
| 06/25/2002 | US6409828 Method and apparatus for achieving a desired thickness profile in a flow-flange reactor |
| 06/20/2002 | WO2002048701A2 Nanosensors |
| 06/20/2002 | WO2002048434A2 Gallium nitride materials and methods for forming layers thereof |
| 06/20/2002 | WO2002021599A3 Compound semiconductor multilayer structure and bipolar transistor using the same |
| 06/20/2002 | WO2002009157A3 Alkali earth metal oxide gate insulators |
| 06/20/2002 | WO2002005323A3 Thermally processing a substrate |
| 06/20/2002 | US20020076939 High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers |
| 06/20/2002 | US20020076559 Quartz reacted with solution of metal compound or metal element to form silicon oxide body doped with metal elements, which when reacted with plasma gas such a fluorine, form compounds with higher boiling points than silicon fluoride |
| 06/20/2002 | US20020074624 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| 06/20/2002 | US20020074552 Gallium nitride materials and methods |
| 06/20/2002 | US20020074324 Heat treatment apparatus and controller for heat treatment apparatus and control method for heat treatment apparatus |
| 06/20/2002 | US20020073918 Particle beam biaxial orientation of a substrate for epitaxial crystal growth |
| 06/20/2002 | US20020073917 Using a group III element and ammonia for nitriding in presence of hydrogen as carrier gas, improved crystallinity by controlling a flow rate ratio between starting material gas and carrier gas |
| 06/20/2002 | CA2430888A1 Nanosensors |
| 06/19/2002 | EP1215311A2 Manufacturing method of silicon carbide single crystals |
| 06/19/2002 | EP1215310A1 p-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND METHOD FOR PREPARATION THEREOF |
| 06/19/2002 | EP1215308A2 A method for fabricating a III-V nitride film and an apparatus for fabricating the same |
| 06/19/2002 | EP1214735A1 Method of producing relaxed silicon germanium layers |
| 06/19/2002 | EP1214462A1 Method for making a metal part coated with diamond and metal part obtained by said method |
| 06/19/2002 | EP1214190A2 Silicon carbide epitaxial layers grown on substrates offcut towards 1100 |
| 06/18/2002 | US6407409 Nucleating gan in a reactor results in a gan nucleation layer having a thickness of a few monolayers. |
| 06/18/2002 | US6407368 System for maintaining a flat zone temperature profile in LP vertical furnace |
| 06/18/2002 | US6406931 Process control; forming buffer layer |
| 06/18/2002 | US6406790 Metal impregnated with carbon fibers |
| 06/18/2002 | US6406540 Process and apparatus for the growth of nitride materials |
| 06/13/2002 | WO2002047147A1 Method for producing a positively doped semiconductor with large forbidden band |
| 06/13/2002 | WO2002047127A2 Pyroelectric device on a monocrystalline semiconductor substrate |
| 06/13/2002 | WO2002046108A2 Metal strip for epitaxial coatings and method for the production thereof |
| 06/13/2002 | US20020072253 Method of removing an amorphous oxide from a monocrystalline surface |
| 06/13/2002 | US20020072249 Vapor deposition of source gases of silicon and carbon under conditions to increase the growth rate of silicon carbide and reducing the defects; controlling the partial pressures and ratios; semiconductors; thin films; ingots |