C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
09/2002
09/25/2002	EP1242647A1 Method of depositing transition metal nitride thin films
09/25/2002	EP0840811B1 System and method for thermal processing of a semiconductor substrate
09/25/2002	EP0835336B1 A device and a method for epitaxially growing objects by cvd
09/25/2002	CN1371433A Epitaxial growing method for aluminium nitride and growing chamber therefor
09/24/2002	US6455814 Backside heating chamber for emissivity independent thermal processes
09/24/2002	US6454855 Method for producing coated workpieces, uses and installation for the method
09/24/2002	US6454854 Semiconductor wafer and production method therefor
09/24/2002	US6454852 High efficiency silicon wafer optimized for advanced semiconductor devices
09/24/2002	US6454563 Wafer treatment chamber having thermal reflector
09/19/2002	WO2002063075A3 Methods for growth of relatively large step-free sic crystal surfaces
09/19/2002	WO2002050875A3 Heating configuration for use in thermal processing chambers
09/19/2002	US20020132495 Flash CVD process for synthesis of carbon nanotrees
09/19/2002	US20020132453 Method for fabricating III-V compound semiconductor
09/19/2002	US20020130311 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
09/19/2002	US20020129768 Chemical vapor deposition apparatuses and deposition methods
09/19/2002	US20020129762 Relaxed InxGa1-xAs layers integrated with Si
09/18/2002	EP1240366A2 Chemical vapor deposition reactor and process chamber for said reactor
09/17/2002	US6451450 Method of depositing a protective layer over a biaxially textured alloy substrate and composition therefrom
09/17/2002	US6451113 Method and apparatus for growing oriented whisker arrays
09/12/2002	WO2002071458A2 Growth of compound semiconductor structures on patterned oxide films
09/12/2002	US20020127766 Semiconductor wafer manufacturing process
09/12/2002	US20020125491 Semiconductor element
09/12/2002	US20020125240 Heating device, method for producing same and film forming apparatus
09/12/2002	US20020124965 Method for fabricating a III-V nitride film and an apparatus for fabricating the same
09/12/2002	US20020124793 Silicon carbide film and method for manufacturing the same
09/11/2002	EP1239062A2 Group III-V compound semiconductor crystal structure and method of epitaxial growth of the same as well as semiconductor device including the same
09/11/2002	EP1238414A1 Method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates
09/10/2002	US6449428 Gas driven rotating susceptor for rapid thermal processing (RTP) system
09/10/2002	US6447607 Apparatus for growing thin films
09/10/2002	US6447606 Method for producing a single-crystalline film of KLN or KLNT
09/10/2002	US6447605 Method for preparing heteroepitaxial thin film
09/10/2002	US6447604 Depositing nitride homoepitaxial layer by vapor phase epitaxy (vpe)
09/06/2002	WO2002069376A1 Hybrid deposition system & methods
09/06/2002	WO2002068709A1 A chemical vapor deposition process and apparatus thereof
09/05/2002	US20020123246 Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayer
09/05/2002	US20020123157 Method for fabricating group III-V compound semiconductor substrate
09/04/2002	EP1236811A2 Chemical vapor deposition apparatus and chemical deposition method
09/04/2002	EP1133593B1 Growth method for a crystalline structure
09/04/2002	CN1367525A Equipment for producing gallium nitride film semiconductor and waste gas purifying equipment
09/03/2002	US6444547 Epitaxially growing semiconductor layer having moderate crystal defects on sub-wafer with specified surface roughness, introducing impurities having different conductivity types to form pn junction, providing rapid thermal annealing
09/03/2002	US6444262 Substrate holder; interior vacuum; film forming semiconductor
09/03/2002	US6444027 Improved quality semiconductor wafers; complete cleaning and removal of native oxide from back surface; reduced autodoping of front surface; eliminating halo affect; preventing wafer float during loading
08/2002
08/29/2002	US20020119680 Method of fabricating a semiconductor structure having quantum wires and a seminconductor device including such structure
08/29/2002	US20020119673 Method and apparatus for forming material layers from atomic gasses
08/29/2002	US20020119670 Plasma etching apparatus and plasma etching method
08/29/2002	US20020119659 Crystal growth method of an oxide and multi-layered structure of oxides
08/29/2002	US20020117664 Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
08/29/2002	US20020117659 Nanosensors
08/29/2002	US20020117647 Vapor deposition approach from metalorganic precursors, such as metal ( beta -diketonates)
08/29/2002	US20020117102 Iron nitride thin film and methods for production thereof
08/28/2002	EP1235282A2 Method for fabricating a nitride film
08/28/2002	CN1365946A Process for directly synthesizing ultra-long single-wall continuous nano carbon tube
08/27/2002	US6441350 Temperature control system for a thermal reactor
08/27/2002	US6440211 Method of depositing buffer layers on biaxially textured metal substrates
08/22/2002	WO2002065525A1 Integration of high k gate dielectric
08/22/2002	WO2002065517A2 Deposition method over mixed substrates using trisilane
08/22/2002	WO2002065516A2 Improved process for deposition of semiconductor films
08/22/2002	WO2002065508A2 Dopant precursors and processes
08/22/2002	WO2002064865A1 Semiconductor crystal growing method and semiconductor light-emitting device
08/22/2002	WO2002064864A1 Production method for semiconductor crystal and semiconductor luminous element
08/22/2002	WO2002064853A2 Thin films and methods of making them using trisilane
08/22/2002	WO2002064852A1 Apparatus for fabricating semiconductor structures
08/22/2002	US20020115267 Semiconductor thin film, semiconductor element and semiconductor device, and fabrication methods thereof
08/22/2002	US20020114949 Process for controlled introduction of defects in elongated nanostructures
08/22/2002	US20020114756 Tailoring nanocrystalline diamond film properties
08/22/2002	US20020112661 Chemical vapour deposition epitaxial reactor having two reaction chambers alternatively actuated and actuating method thereof
08/21/2002	CN1365522A Si Ge C semiconductor crystal and production method thereof
08/21/2002	CN1365515A Method for producing semiconductor crystal
08/20/2002	US6437290 Heat treatment apparatus having a thin light-transmitting window
08/20/2002	US6436842 Semiconductor wafer including a dot mark of a peculiar shape and method of forming the dot mark
08/20/2002	US6436837 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
08/20/2002	US6436796 Systems and methods for epitaxial processing of a semiconductor substrate
08/20/2002	US6436361 Silicon carbide and process for its production
08/20/2002	US6436303 Film removal employing a remote plasma source
08/20/2002	US6436186 Substrate wafer for high temperature/high frequency semiconductor electronic element; close contact stacking base material and polycrystalline plate; interposing organic or inorganic substance; heating for unidirectional orientation
08/20/2002	US6435865 Apparatus and method for positioning gas injectors in a vertical furnace
08/15/2002	WO2002063665A2 RELAXED InXGa1-xAs LAYERS INTEGRATED WITH Si
08/15/2002	WO2002063075A2 Methods for growth of relatively large step-free sic crystal surfaces
08/15/2002	WO2002063074A1 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
08/15/2002	US20020111044 Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts
08/15/2002	US20020108714 Processing chamber for atomic layer deposition processes
08/15/2002	US20020108570 Method and apparatus of growing a thin film onto a substrate
08/14/2002	EP1230448A1 Patterned carbon nanotubes
08/14/2002	EP1230421A1 Method of modifying source chemicals in an ald process
08/14/2002	CN1363730A Process for controlling polarity of GaN
08/13/2002	US6434327 Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
08/13/2002	US6432521 Forming at low temperature
08/13/2002	US6432205 Gas feeding system for chemical vapor deposition reactor and method of controlling the same
08/08/2002	WO2002061852A1 Method and device for producing an electronic gaas detector for x-ray detection for imaging
08/08/2002	WO2002061185A1 Particle beam biaxial orientation of a substrate for epitaxial criystal growth
08/08/2002	WO2001022482A9 Method of producing relaxed silicon germanium layers
08/08/2002	US20020106842 Methods for growth of relatively large step-free sic crystal surfaces
08/08/2002	US20020106826 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
08/08/2002	US20020104477 Method of growing a polycrystalline silicon layer. method of growing a single crystal silicon layer and catalytic CVD apparatus
08/08/2002	US20020104476 Apparatus for growing epitaxial layers on wafers by chemical vapor deposition
08/07/2002	CN1362731A Heat treatment equipment and semiconductor device manufacture method
08/06/2002	US6429465 Crystal structure
08/06/2002	US6429098 Relaxed substrate with high germanium content having low emergent dislocation density; very low surface roughness wafers
08/06/2002	US6428847 Gas flow vortex formation for uniform chemical vapor deposition (cvd) on stationary wafer
08/06/2002	US6428635 Substrates for superconductors

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