C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2002
11/05/2002	US6474987 Wafer holder
11/05/2002	US6474562 Gas injector and gas injection direction adjusting method
10/2002
10/31/2002	WO2002086952A1 Mixed-signal semiconductor structure
10/31/2002	WO2002086451A2 Organoboron route and process for preparation of boron nitride
10/31/2002	WO2002086201A1 Semiconductor structures and devices utilizing perovskite stacks
10/31/2002	US20020160620 Method for producing coated workpieces, uses and installation for the method
10/31/2002	US20020160605 Method for producing semiconductor crystal
10/31/2002	US20020160587 Method to increase carbon and boron doping concentrations in Si and SiGe films
10/31/2002	US20020160112 Chemical vapor deposition apparatus and chemical vapor deposition method
10/31/2002	US20020158251 Semiconductor device and method for fabricating the same
10/31/2002	US20020158245 Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layers
10/31/2002	US20020157688 Method for cleaning a substrate in selective epitaxial growth process
10/31/2002	US20020157485 Mask for evaluating selective epitaxial growth process
10/30/2002	EP1252364A1 Apparatus and method for epitaxially processing a substrate
10/30/2002	CN1377311A Silicon carbide epitaxial layers grown on substrates offcut towards
10/29/2002	US6472639 Heat treatment method and heat treatment apparatus
10/29/2002	US6472300 Method for growing p-n homojunction-based structures utilizing HVPE techniques
10/29/2002	US6472276 Using silicate layers for composite semiconductor
10/29/2002	US6471771 In-situ post epitaxial treatment process
10/29/2002	US6471769 Using a group iii element and ammonia for nitriding in presence of hydrogen as carrier gas, improved crystallinity by controlling a flow rate ratio between starting material gas and carrier gas
10/24/2002	WO2002084729A2 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring
10/24/2002	WO2002084711A1 Heating system and method for heating an atmospheric reactor
10/24/2002	WO2002084710A2 Systems and methods for epitaxially depositing films
10/24/2002	WO2002083978A1 Device or method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
10/24/2002	US20020155722 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
10/24/2002	US20020155713 Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE
10/24/2002	US20020155712 Method of fabricating group-III nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
10/24/2002	US20020155683 Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE
10/24/2002	US20020155682 Method for fabricating a III nitride film
10/24/2002	US20020155649 Method for fabricating a nitride film
10/24/2002	US20020155217 Overcoating nonmagnetic substrate; polarization
10/24/2002	US20020155052 Aerosolizing organoboron precursor; introducing carrier gas into chamber to forming a combined gas stream; sweeping into heated furnace; injecting nitriding agent to form powder of boron-nitrogen-oxygen-carbon-hydrogen; collecting
10/24/2002	US20020153595 Semiconductor substrate and thin-film semiconductive member, and method for making thereof
10/24/2002	US20020153524 Structure and method for fabricating semiconductor structures and devices utilizing perovskite stacks
10/24/2002	US20020152952 Process for producing an epitaxial layer of gallium nitride
10/24/2002	US20020152951 Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE
10/24/2002	DE10119463A1 Production of a chalcogenide halide of the ABC2 type comprises arranging metallic precursor layers, chalcogenizing with simultaneous optical process control, irradiating with light, and surface chalcogenizing to form the ABC2 phase
10/22/2002	US6469682 Periodic dielectric structure of the three-dimensional photonic band gap type and method for its manufacture
10/22/2002	US6468886 Reacting silicon with iodine forming silicon iodide; purify by distillation to removal impurities
10/22/2002	US6468882 Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate
10/22/2002	US6468348 Method of producing an open form
10/22/2002	US6468347 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
10/17/2002	WO2002082516A1 Gaseous phase growing device
10/17/2002	WO2002082515A1 Semiconductor structure and device including a carbon film
10/17/2002	WO2002082513A1 Semiconductor structures and devices utilizing a stable template
10/17/2002	WO2002081789A1 METHOD FOR MANUFACTURING ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ZNTE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, AND SEMICONDUCTOR DEVICE
10/17/2002	WO2002081788A2 Method for h2 recycling in semiconductor processing system
10/17/2002	WO2002081366A1 Process and apparatus for the production of carbon nanotubes
10/17/2002	US20020150684 Vapor deposition; heating; applying bias voltage
10/17/2002	DE10118130A1 Device for depositing crystalline layers on crystalline substrates in the gas phase comprises a heated reaction chamber with substrate holders arranged in a circular manner on a support, heated sources, and a hydride feed line
10/16/2002	EP1249522A2 Oxygen doping method for a gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
10/16/2002	EP1249521A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME
10/16/2002	EP1249036A1 Low threading dislocation density relaxed mismatched epilayers without high temperature growth
10/16/2002	EP1248865A1 Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide
10/16/2002	EP1042544B1 Growth of very uniform silicon carbide epitaxial layers
10/16/2002	CN1374683A III-V family compound semi-conductor crystal structure and its epitaxial growth method and semi-conductor device
10/15/2002	US6465669 Organometallic compounds for use in metal-organic vapor-phase epitaxy
10/15/2002	US6465371 Atomic layer deposition (ald) using zirconium tetra-tert-butoxide as a zirconium source material instead of conventional zrcl4, so resulting film is chlorine-free
10/15/2002	US6464930 Furnace of apparatus for manufacturing a semiconductor device having a heat blocker for preventing heat loss during the unloading of wafers
10/15/2002	US6464793 Semiconductor crystal growth apparatus
10/15/2002	US6464790 Substrate support member
10/15/2002	US6464781 Method of suppressing convection in a fluid in a cylindrical vessel
10/15/2002	US6464779 Copper atomic layer chemical vapor desposition
10/10/2002	WO2002080251A1 Plasma processing device
10/10/2002	WO2002080244A2 Improved process for deposition of semiconductor films
10/10/2002	WO2002080228A2 Structure including cubic boron nitride films
10/10/2002	WO2002080225A2 Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques
10/10/2002	WO2002079533A1 Aluminum alloy sheet excellent in formability and hardenability during baking of coating and method for production thereof
10/10/2002	US20020146895 Providing silicon substrate having surface; forming by atomic layer deposition seed layer on surface of silicon substrate; forming by atomic layer deposition of layers of high dielectric constant oxide on seed layer
10/10/2002	US20020146506 Introducing vapor-phase chemicals into a reactor with sufficiently supplied energy to cause a reaction; exhausting gases; separating first gas from exhausted gases; purifying first gas; introducing first gas into reactor
10/10/2002	US20020144645 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates
10/10/2002	US20020144643 Method for forming a single crystalline film
10/10/2002	CA2712316A1 Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof
10/08/2002	US6462355 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
10/08/2002	US6462310 Hot wall rapid thermal processor
10/08/2002	US6461944 Methods for growth of relatively large step-free SiC crystal surfaces
10/08/2002	US6461447 Substrate for epitaxial growth
10/08/2002	US6461428 Method and apparatus for controlling rise and fall of temperature in semiconductor substrates
10/03/2002	WO2002078070A1 A device for epitaxially growing objects by cvd
10/03/2002	WO2002078068A1 Method for growing crystal of compound semiconductor by movpe
10/03/2002	WO2002078067A1 Method for growing crystal of gallium nitride compound semiconductor and electronic device having gallium nitride compound semiconductor
10/03/2002	US20020140013 Structure and method for fabricating semiconductor structures and devices utilizing a stable template
10/03/2002	CA2440366A1 A device for epitaxially growing objects by cvd
10/02/2002	EP1246233A2 Semiconductor substrate made of group III nitride, and process for manufacture thereof
10/02/2002	EP1245702A2 Process for producing a gallium nitride crystal substrate
10/02/2002	EP1245701A2 A method of fabricating a Group III nitride film
10/01/2002	US6458416 Deposition methods
10/01/2002	US6458415 Method of forming diamond film and film-forming apparatus
10/01/2002	US6458207 Silicon carbide single-crystals
10/01/2002	US6458205 Silicon epitaxial wafer and its manufacturing method
09/2002
09/26/2002	WO2002075790A2 Method and apparatus for transferring heat from a substrate to a chuck
09/26/2002	WO2002075018A1 A ccvd method for producing tubular carbon nanofibers
09/26/2002	WO2002046108A3 Metal strip for epitaxial coatings and method for the production thereof
09/26/2002	US20020137342 Method of manufacturing nitride semiconductor substrate
09/26/2002	US20020137334 Process for producing semiconductor and apparatus for production
09/26/2002	US20020137311 Within atomic layer or chemical vapor deposition reactors , delivering a purge gas in a sleeve surrounding a conductor associated with an electric heating assembly for a wafer so that the purge gas envelopes the electrical conductor in the sleeve and escapes from an unsealed end into an exhaust system
09/26/2002	US20020136671 Production apparatus for producing gallium nitride film semiconductor and cleaning apparatus for exhaust gas
09/26/2002	US20020134300 Method of depositing buffer layers on biaxially textured metal substrates
09/25/2002	EP1244140A2 Method of manufacturing nitride semiconductor substrate
09/25/2002	EP1242656A1 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites

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