C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
12/2002
12/12/2002	DE10127073A1 Verfahren zur Behandlung heteroepitaktischer Halbleiterschichten auf Siliziumsubstraten A method of treating heteroepitaxial semiconductor layers on silicon substrates,
12/11/2002	EP1265274A2 Single crystal silicon carbide thin film fabrication method and fabrication apparatus for the same
12/11/2002	EP1264011A1 Iii-v nitride substrate boule and method of making and using the same
12/11/2002	CN1384892A Method and apparatus for growing silicon carbice crystals
12/11/2002	CN1384533A Homogeneity improving method and device for hydride gaseous epitaxially groven GaN material
12/10/2002	US6492621 Hot wall rapid thermal processor
12/10/2002	CA2220354C Method and apparatus using organic vapor phase deposition for the growth of organic thin films
12/05/2002	WO2002097867A1 Arrangement comprising a support body with a substrate holder mounted thereon on a gas bearing with rotating drive
12/05/2002	WO2002097864A2 Low temperature load and bake
12/05/2002	WO2002097861A2 Semiconductor device, semiconductor layer and production method thereof
12/05/2002	WO2002097172A2 Molecular beam epitaxy equipment
12/05/2002	US20020182892 Wafer transfer method performed with vapor thin film growth system and wafer support member used for this method
12/05/2002	US20020182889 Free standing substrates by laser-induced decoherency and regrowth
12/05/2002	US20020182423 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
12/05/2002	US20020179936 Structure and method for fabricating semiconductor structures and devices which include quaternary chalcogenides
12/05/2002	US20020179911 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
12/05/2002	US20020179011 Gas port sealing for CVD/CVI furnace hearth plates
12/05/2002	US20020178999 Laminate articles on biaxially textured metal substrates
12/05/2002	DE10135151A1 Aus einem Tragkörper und darauf gasgelagerten und drehangetriebenen Substrathalter bestehende Anordnung From a support body and on gas bearings and rotationally driven substrate holder existing arrangement
12/04/2002	EP1263030A2 Method for processing heteroepitaxial semiconducting layers on silicon substrates
12/04/2002	EP1226285A4 Single crystal tungsten alloy penetrator and method of making
12/04/2002	EP0848223B1 Vertical heat treatment device
12/03/2002	US6488771 Method for growing low-defect single crystal heteroepitaxial films
12/03/2002	US6488767 High surface quality GaN wafer and method of fabricating same
12/03/2002	US6488497 Wafer boat with arcuate wafer support arms
11/2002
11/28/2002	WO2002095807A2 Silicon fixtures useful for high temperature wafer processing
11/28/2002	US20020177312 Method of epitaxially growing submicron group III nitride layers utilizing HVPE
11/28/2002	US20020175341 Process for production of a nitride semiconductor device and a nitride semiconductor device
11/28/2002	US20020175340 Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate
11/28/2002	US20020174833 Apparatus for epitaxially for growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
11/27/2002	EP1259978A2 Method and device for producing group iii-n, group iii-v-n and metal-nitrogen component structures on si substrates
11/27/2002	CN1381872A Chemical vapour-phase deposition device and chemical vapour-phase deposition method
11/26/2002	US6486071 Spherical shaped semiconductor integrated circuit
11/26/2002	US6485573 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus
11/21/2002	WO2002093623A2 Assembly comprising heat distributing plate and edge support
11/21/2002	WO2002093619A2 Semiconductor structures and devices utilizing a compliant substrate
11/21/2002	WO2002093618A2 Semiconductor structure including low-leakage, high crystalline dielectric
11/21/2002	WO2002092886A1 High-resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage
11/21/2002	WO2002092876A1 Method and device for depositing layers
11/21/2002	WO2002056417A3 Tunable structure utilizing a compliant substrate
11/21/2002	WO2002017362A8 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/21/2002	US20020173130 Vapor deposition using silane and dopant gas mixture; overcoating with dielectrics and electrodes; controlling concentration of gas mixture
11/21/2002	US20020173125 CVD-SiC self-supporting membrane structure and method for manufacturing the same
11/21/2002	US20020173124 Vapor deposition using light source
11/21/2002	US20020173113 Vapor deposition; doping
11/21/2002	US20020170598 Process gas supply mechanism for ALCVD systems
11/21/2002	US20020170490 Method and apparatus for growing aluminum nitride monocrystals
11/21/2002	US20020170489 Crystal growth method for nitride semiconductor and formation method for semiconductor device
11/21/2002	US20020170488 Method for manufacturing semiconductor substrate
11/21/2002	US20020170487 Pre-coated silicon fixtures used in a high temperature process
11/21/2002	US20020170486 Silicon fixture with roughened surface supporting wafers in chemical vapor deposition
11/21/2002	US20020170484 Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor
11/21/2002	DE10124609A1 Device for depositing crystalline active layers on crystalline substrates comprises a process chamber arranged in a reaction housing, a gas inlet
11/21/2002	CA2443512A1 High-resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage
11/20/2002	EP1258544A1 Compound crystal and method of manufacturing same
11/20/2002	EP1258541A2 Process gas supply for cvd systems
11/20/2002	EP1258039A1 Communicating device
11/20/2002	EP1258038A1 Semiconductor devices
11/20/2002	EP1258031A1 Semiconductor structure
11/20/2002	EP1258030A1 A process for forming a semiconductor structure
11/20/2002	EP1258027A2 Semiconductor structure
11/20/2002	CN1380449A Process for mixing oxygen into gallium nitride crystal and oxygen-mixed n-type gallium nitride single crystal plate
11/20/2002	CN1094524C Process for growing aluminium nitride piezoelectric fiml on substrate of high sound velocity material
11/19/2002	US6482262 Deposition of transition metal carbides
11/19/2002	US6481368 Device and a method for heat treatment of an object in a susceptor
11/14/2002	WO2002091488A2 Semiconductor device including an optically-active material
11/14/2002	WO2002091441A2 Semiconductor device and method of making same
11/14/2002	WO2002091434A2 Wide bandgap semiconductor structure
11/14/2002	WO2002090625A1 A method to produce germanium layers
11/14/2002	WO2002075790A3 Method and apparatus for transferring heat from a substrate to a chuck
11/14/2002	US20020168868 First and second surfaces with different morphology, adding trisilane to the chamber under chemical vapor depostion, and depositing a silane containing film
11/14/2002	US20020168858 Etching gas assistant epitaxial method
11/14/2002	US20020168844 Reduced crystal defect of the epitaxial layer, improved quality; has a tilt angle of at most 100 seconds
11/14/2002	US20020167981 Semiconductor device structure including an optically-active material, device formed using the structure, and method of forming the structure and device
11/14/2002	US20020167022 Semiconductor device and method of making same
11/14/2002	US20020167010 High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
11/14/2002	US20020167005 Semiconductor structure including low-leakage, high crystalline dielectric materials and methods of forming same
11/14/2002	CA2445772A1 A method to produce germanium layers
11/13/2002	EP1256973A1 Heating system and method for heating an atmospheric reactor
11/12/2002	US6479839 III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
11/12/2002	US6478877 Gas collector for epitaxial reactors
11/12/2002	US6478873 Method of optimizing process of selective epitaxial growth
11/12/2002	US6478872 Method of delivering gas into reaction chamber and shower head used to deliver gas
11/12/2002	US6478871 Single step process for epitaxial lateral overgrowth of nitride based materials
11/07/2002	WO2002089223A1 Production method for light emitting element absract:
11/07/2002	WO2002089188A2 Semiconductor structures utilizing binary metal oxide layers
11/07/2002	US20020163010 Wide bandgap semiconductor structure, semiconductor device including the structure, and methods of forming the structure and device
11/06/2002	EP1255281A2 Semiconductor device and method for fabricating the same
11/06/2002	EP0737258B1 Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films
11/06/2002	CN1378238A Method for growing GaN crystal chip and GaN crystal chip
11/06/2002	CN1378237A Semiconductor substrate made from III family nitride
11/05/2002	US6476420 P-N homojunction-based structures utilizing HVPE growth III-V compound layers
11/05/2002	US6475820 Method for growing semiconductor layer and method for fabricating semiconductor light emitting elements
11/05/2002	US6475813 MOCVD and annealing processes for C-axis oriented ferroelectric thin films
11/05/2002	US6475627 Semiconductor wafer and vapor growth apparatus
11/05/2002	US6475456 Silicon carbide film and method for manufacturing the same
11/05/2002	US6475286 Seal means for separable closing elements, such as separable elements of chemical vapor deposition chamber and deposition reactor apparatus
11/05/2002	US6475284 Gas dispersion head
11/05/2002	US6475277 Group III-V nitride semiconductor growth method and vapor phase growth apparatus
11/05/2002	US6475276 Production of elemental thin films using a boron-containing reducing agent

1 ... 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 ... 134