| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 01/16/2003 | US20030012965 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate comprising an oxygen-doped compound semiconductor layer |
| 01/16/2003 | US20030012876 From a group IV metal complex having an N-alkoxy-b-ketoiminate tridentate ligand with a charge of -2; e.g., titanium bis (4-(2-methylethoxy) imino-2-pentanoate) |
| 01/16/2003 | US20030010978 Semiconductor wafers with integrated heat spreading layer |
| 01/16/2003 | US20030010974 Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| 01/16/2003 | US20030010792 Chemical mix and delivery systems and methods thereof |
| 01/16/2003 | US20030010279 Method for mass-producing carbon nanocoils |
| 01/16/2003 | CA2447728A1 Nanoscale wires and related devices |
| 01/15/2003 | EP1276140A2 Substrate including wide low-defect region for use in semiconductor element |
| 01/15/2003 | EP1144737B1 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 01/15/2003 | EP1038048B1 Gas feeding system for chemical vapor deposition reactor and method of controlling the same |
| 01/14/2003 | US6507046 High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage |
| 01/14/2003 | US6506994 Low profile thick film heaters in multi-slot bake chamber |
| 01/14/2003 | US6506667 Growth of epitaxial semiconductor material with improved crystallographic properties |
| 01/14/2003 | US6506291 Substrate support with multilevel heat transfer mechanism |
| 01/14/2003 | US6506252 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| 01/09/2003 | WO2003003432A1 Vapor growth method and vapor growth device |
| 01/09/2003 | US20030008527 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate and laser radiation for materials used to form the same |
| 01/09/2003 | US20030008505 Method to grow self-assembled epitaxial nanowires |
| 01/09/2003 | US20030008179 Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon |
| 01/09/2003 | US20030006211 Substrate including wide low-defect region for use in semiconductor element |
| 01/09/2003 | US20030005886 Horizontal reactor for compound semiconductor growth |
| 01/09/2003 | US20030005879 Method for producing coated workpieces, uses and installation for the method |
| 01/08/2003 | EP1273683A2 Atomic layer deposition method using a group IV metal precursor |
| 01/08/2003 | EP1272693A1 Method for growing semiconductor crystalline materials containing nitrogen |
| 01/08/2003 | EP0828867B1 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities |
| 01/07/2003 | US6504183 Reducing dislocation density, AlGaInN |
| 01/07/2003 | US6503773 Low threading dislocation density relaxed mismatched epilayers without high temperature growth |
| 01/07/2003 | US6503610 Having low dislocation density without increasing thickness of mask layer; regrowth of masking layer continues until disappearance of underlying crystal |
| 01/07/2003 | US6503562 Semiconductor fabrication apparatus and fabrication method thereof |
| 01/07/2003 | US6503079 Substrate processing apparatus and method for manufacturing semiconductor device |
| 01/03/2003 | WO2003000965A1 3c-sic nanowhisker synthesizing method and 3c-sic nanowhisker |
| 01/03/2003 | WO2002022919A3 Forming a single crystal semiconductor film on a non-crystalline surface |
| 01/02/2003 | US20030003696 Method and apparatus for tuning a plurality of processing chambers |
| 01/02/2003 | US20030001207 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant subtrate for materials used to form the same |
| 01/02/2003 | US20030001160 Semiconductor wafer and production method therefor |
| 01/02/2003 | US20030000936 Heating chamber and method of heating a wafer |
| 01/02/2003 | US20030000473 Method of delivering gas into reaction chamber and shower head used to deliver gas |
| 01/02/2003 | US20030000467 Microwave plasma film-forming apparatus for forming diamond film |
| 01/02/2003 | EP1271663A2 A III nitride film and III nitride multilayer |
| 01/02/2003 | EP1271627A2 Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and respective substrate structure |
| 01/02/2003 | EP1271620A1 Method and apparatus for heat treatment of semiconductor films |
| 01/02/2003 | EP1271607A2 Chemical vapor deposition apparatus and method |
| 01/02/2003 | EP1270768A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor |
| 01/02/2003 | EP1270761A1 Method for preparing zinc oxide semi-conductor material |
| 01/02/2003 | EP1268883A1 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
| 01/02/2003 | EP1268882A2 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide |
| 01/01/2003 | CN1388991A Fractal structure and method of forming it |
| 01/01/2003 | CN1097847C Vapar phase epitaxial technology of compound semiconductor |
| 12/31/2002 | US6501121 Semiconductor structure |
| 12/31/2002 | US6500258 Method of growing a semiconductor layer |
| 12/31/2002 | US6500256 Single crystal silicon layer, its epitaxial growth method and semiconductor device |
| 12/27/2002 | WO2002103781A1 Wafer supporter |
| 12/27/2002 | WO2002103761A1 Substrate support with multilevel heat transfer mechanism |
| 12/27/2002 | WO2002086451A3 Organoboron route and process for preparation of boron nitride |
| 12/26/2002 | US20020197841 Group III nitride compound semiconductor element and method for producing the same |
| 12/26/2002 | US20020197831 comprising forming a protective film on a surface of a lower-layer interconnection, forming a multilayer-structured film by stacking two porous films, two non-porous films on a surface of the protective film , and forming a via hole |
| 12/26/2002 | US20020197830 Method and apparatus for producing group III nitride compound semiconductor |
| 12/26/2002 | US20020197827 Method for producing group III nitride compound semiconductor device |
| 12/26/2002 | US20020197825 Semiconductor substrate made of group III nitride, and process for manufacture thereof |
| 12/26/2002 | US20020197489 Silicon, a buffer layer, template layer comprises a perovskite oxide |
| 12/26/2002 | US20020195598 Fractal structure and method of forming it |
| 12/26/2002 | US20020195055 Vortex based CVD reactor |
| 12/26/2002 | US20020195054 Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device |
| 12/25/2002 | CN2527572Y Multilayer helerogenous epitaxial growth film on silicon base universal liner |
| 12/25/2002 | CN1387233A Method and system for mfg. group III-V compound semiconductor, and group III-V compound semiconductor |
| 12/25/2002 | CN1387231A Nitride-based compound semiconductor crystal substrate structure and mfg. method thereof |
| 12/25/2002 | CN1386898A Horizontal reacting furnace for mfg. semiconductor compound |
| 12/24/2002 | US6498113 Free standing substrates by laser-induced decoherency and regrowth |
| 12/24/2002 | US6497767 Thermal processing unit for single substrate |
| 12/19/2002 | WO2002101122A1 Method for forming thin film crystal and semiconductor element employing that method |
| 12/19/2002 | WO2002101121A1 High surface quality gan wafer and method of fabricating same |
| 12/19/2002 | WO2002011187A3 Method and apparatus for depositing a tantalum-containing layer on a substrate |
| 12/19/2002 | US20020192959 III nitride semiconductor substrate for ELO |
| 12/19/2002 | US20020192930 Method of forming a single crystalline silicon pattern utilizing a structural selective epitaxial growth technique and a selective silicon etching technique |
| 12/19/2002 | US20020192508 Method of fabricating improved buffer architecture for biaxially textured structures |
| 12/19/2002 | US20020192373 Method for growing high quality group-III nitride thin film by metal organic chemical vapor deposition |
| 12/19/2002 | US20020192372 Organic film vapor deposition method and a scintillator panel |
| 12/19/2002 | US20020192369 Vapor deposition method and apparatus |
| 12/19/2002 | US20020190275 III nitride film and a III nitride multilayer |
| 12/19/2002 | US20020190259 III-Nitride light emitting devices with low driving voltage |
| 12/19/2002 | US20020190223 Organic film vapor deposition method and a scintillator panel |
| 12/19/2002 | US20020190051 Low profile thick film heaters in multi-slot bake chamber |
| 12/19/2002 | US20020189940 Substrate support with multilevel heat transfer mechanism |
| 12/19/2002 | US20020189535 Method for manufacturing semiconductor crystal film |
| 12/19/2002 | US20020189532 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| 12/18/2002 | EP1267408A2 Composite integrated circuit and its fabrication method |
| 12/18/2002 | EP1267393A2 Group III nitride semiconductor substrate for epitaxial lateral overgrowth (ELO) |
| 12/18/2002 | EP1266054A2 Graded thin films |
| 12/18/2002 | EP1027482A4 Apparatus and method for the in-situ generation of dopants |
| 12/12/2002 | WO2002099867A1 Structure and method for fabricating semiconductor structures on compliant substrates |
| 12/12/2002 | WO2002099861A1 Rector having a movale shuter |
| 12/12/2002 | WO2002099860A1 Method of preparing nitrogen containing semiconductor material |
| 12/12/2002 | WO2002099160A1 Gas port sealing for cvd/cvi furnace hearth plates |
| 12/12/2002 | US20020187356 Reducing stresses; noncracking; semiconductor |
| 12/12/2002 | US20020187256 Atomic Layer Deposition using a boron compound as a reducing agent. |
| 12/12/2002 | US20020185660 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device |
| 12/12/2002 | US20020185068 Reactor having a movable shutter |
| 12/12/2002 | US20020185060 Apparatus for growing thin films |
| 12/12/2002 | US20020185058 Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same |
| 12/12/2002 | US20020185054 High surface quality gan wafer and method of fabricating same |