| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 02/19/2003 | CN1398429A Communicating device |
| 02/19/2003 | CN1398423A Process for forming semiconductor structure |
| 02/18/2003 | US6521550 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process |
| 02/18/2003 | US6521203 Process for producing α-alumina |
| 02/13/2003 | WO2003012862A1 Integrating compound semiconductor structures and devices |
| 02/13/2003 | WO2003012841A2 Semiconductor structures and devices not lattice matched to the substrate |
| 02/13/2003 | WO2003012164A1 Method for the production of coated substrates |
| 02/13/2003 | WO2002071458A3 Growth of compound semiconductor structures on patterned oxide films |
| 02/13/2003 | WO2002009150A3 Semiconductor structure for use with high-frequency signals |
| 02/13/2003 | US20030032288 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate |
| 02/13/2003 | US20030032281 Graded thin films |
| 02/13/2003 | US20030032256 Overlay shift correction for the deposition of epitaxial silicon layer and post-epitaxial silicon layers in a semiconductor device |
| 02/13/2003 | US20030031974 Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices |
| 02/13/2003 | US20030031807 Deposition of transition metal carbides |
| 02/13/2003 | US20030030057 Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating |
| 02/13/2003 | US20030029735 Gas mixture is subjected to heating and pressurization, decreasing temperature and pressue |
| 02/13/2003 | US20030029384 Rotating susceptor and method of processing substrates |
| 02/13/2003 | US20030029376 High quality, semiconductor-grade, single crystals of silicon carbide; optics, electronics; minimization of gapping between tiles |
| 02/12/2003 | CN1101484C Process for preparing lithium gallium oxide crystal |
| 02/11/2003 | US6518644 A semiconductor structure and method of processing same including a substrate, a lattice-mismatched first layer deposited on the substrate and annealed at a temperature greater than 100 degrees C. above the deposition temperature, |
| 02/06/2003 | WO2003010804A1 Method of producing semiconductor thin film, method of producing semiconductor device, semiconductor device, integrated circuit, electrooptical device and electronic apparatus |
| 02/06/2003 | WO2003010369A1 Oxide high-critical temperature superconductor acicular crystal and its production method |
| 02/06/2003 | WO2002084710A3 Systems and methods for epitaxially depositing films |
| 02/06/2003 | US20030027409 Germanium semiconductor structure, integrated circuit, and process for fabricating the same |
| 02/06/2003 | US20030027408 Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
| 02/06/2003 | US20030027407 Method for producing group III nitride compound semiconductor |
| 02/06/2003 | US20030024920 Hot wall rapid thermal processor |
| 02/06/2003 | US20030024646 Plasma etching apparatus and plasma etching method |
| 02/06/2003 | US20030024475 Method and apparatus for producing group-III nitrides |
| 02/06/2003 | US20030024472 Wafer produced thereby, and associated methods and devices using the wafer |
| 02/06/2003 | US20030024471 Fabrication of semiconductor structures and devices forms by utilizing laser assisted deposition |
| 02/04/2003 | US6515297 CVD-SiC self-supporting membrane structure and method for manufacturing the same |
| 02/04/2003 | US6515261 Enhanced lift pin |
| 02/04/2003 | US6514886 Method for elimination of contaminants prior to epitaxy |
| 02/04/2003 | US6514338 Comprising allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows |
| 02/04/2003 | US6514313 Gas purification system and method |
| 02/04/2003 | US6513226 Method of manufacturing film structure, method of manufacturing optical waveguide substrate and method of manufacturing second harmonic generation device |
| 01/30/2003 | WO2003009398A2 Structure and method for fabricating an optical bus |
| 01/30/2003 | WO2003009357A2 Epitaxial semiconductor on insulator (soi) structures and devices |
| 01/30/2003 | WO2003009354A1 Semiconductor structure including a monocrystalline compound semiconductor layer |
| 01/30/2003 | WO2003009344A2 Iii-v arsenide nitride semiconductor substrate |
| 01/30/2003 | WO2003008675A1 Process chamber with a base with sectionally different rotational drive and layer deposition method in such a process chamber |
| 01/30/2003 | WO2002091488A3 Semiconductor device including an optically-active material |
| 01/30/2003 | WO2002091434A3 Wide bandgap semiconductor structure |
| 01/30/2003 | US20030022528 Improved Process for Deposition of Semiconductor Films |
| 01/30/2003 | US20030022525 Semiconductor structure and device including a monocrystalline layer formed overlying a compliant substrate and a method of forming the same |
| 01/30/2003 | US20030022520 Light-assisted deposition method for fabricating a compliant substrate for epitaxial growth of monocrystalline materials |
| 01/30/2003 | US20030022469 Semiconductor manufacturing method and semiconductor manufacturing apparatus |
| 01/30/2003 | US20030022395 Structure and method for fabricating an integrated phased array circuit |
| 01/30/2003 | US20030021896 Film forming method and film forming apparatus as well as silicon-based film, photovoltaic device and solar cell, sensor and image pick-up device using the same |
| 01/30/2003 | US20030021895 Method for producing coated substrates |
| 01/30/2003 | US20030021885 Processing line having means to monitor crystallographic orientation |
| 01/30/2003 | US20030021732 Multilayer semiconductor laser analyzer; vertical cavities |
| 01/30/2003 | US20030020087 Nitride semiconductor, semiconductor device, and method of manufacturing the same |
| 01/30/2003 | US20030020068 Structure and method for integrating compound semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same |
| 01/30/2003 | US20030019858 Ceramic heater with thermal pipe for improving temperature uniformity, efficiency and robustness and manufacturing method |
| 01/30/2003 | US20030019668 Particle beam biaxial orientation of a substrate for epitaxial crystal growth |
| 01/30/2003 | US20030019580 Method of and apparatus for tunable gas injection in a plasma processing system |
| 01/30/2003 | US20030019507 Cleaning and drying method and apparatus |
| 01/30/2003 | US20030019429 Purified silicon production system |
| 01/30/2003 | US20030019423 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant gallium nitride substrate |
| 01/29/2003 | EP1115920B1 Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |
| 01/29/2003 | CN1393907A Method and apparatus for mfg. single crystal silicon carbide |
| 01/23/2003 | WO2003007393A2 Semiconductor structures comprising a piezoelectric material and corresponding processes and systems |
| 01/23/2003 | WO2003007353A1 Semiconductor structures comprising an oxygen-doped compound semiconductor layer |
| 01/23/2003 | WO2003007336A2 Wafer boat with arcuate wafer support arms |
| 01/23/2003 | WO2003007334A2 Semiconductor structures and devices for detecting chemical reactant |
| 01/23/2003 | WO2003006720A1 Method for achieving low defect density gan single crystal boules |
| 01/23/2003 | WO2003006719A1 METHOD FOR ACHIEVING LOW DEFECT DENSITY AIGaN SINGLE CRYSTAL BOULES |
| 01/23/2003 | WO2002063665A3 RELAXED InXGa1-xAs LAYERS INTEGRATED WITH Si |
| 01/23/2003 | US20030017722 Structure and method for fabricating an integrated phased array circuit |
| 01/23/2003 | US20030017720 Method for fabricating semiconductor structures utilizing atomic layer epitaxy of organometallic compounds to deposit a metallic surfactant layer |
| 01/23/2003 | US20030017716 In-situ post epitaxial treatment process |
| 01/23/2003 | US20030017690 Apparatus and method for attaching integrated circuit structures and devices utilizing the formation of a compliant substrate to a circuit board |
| 01/23/2003 | US20030017685 Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure |
| 01/23/2003 | US20030017661 Laser-assisted fabrication of semiconductor structures and devices formed by utilizing a compliant substrate |
| 01/23/2003 | US20030017626 Method and apparatus for controlling propagation of dislocations in semiconductor structures and devices |
| 01/23/2003 | US20030017624 Structure and method for fabricating semiconductor structures and devices utilizing compliant substrate for materials used to form the same |
| 01/23/2003 | US20030015725 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate and ion beam assisted deposition for materials used to form the same |
| 01/23/2003 | US20030015716 Structure and method for fabricating an optical bus |
| 01/23/2003 | US20030015714 Structure and process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including surface treatment of an oxide layer |
| 01/23/2003 | US20030015704 Structure and process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same including intermediate surface cleaning |
| 01/23/2003 | US20030015702 Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| 01/23/2003 | US20030015137 Chemical vapor deposition apparatus and chemical vapor deposition method |
| 01/22/2003 | EP1060301B1 Ceiling arrangement for an epitaxial growth reactor |
| 01/22/2003 | CN1392595A Chemical vapor deposition equipment and chemical vapor deposition method |
| 01/21/2003 | US6508879 Method of fabricating group III-V nitride compound semiconductor and method of fabricating semiconductor device |
| 01/21/2003 | US6508878 GaN system compound semiconductor and method for growing crystal thereof |
| 01/16/2003 | WO2003005450A2 Nanoscale wires and related devices |
| 01/16/2003 | WO2003005443A2 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure |
| 01/16/2003 | WO2003005425A1 Semiconductor layer formation utilizing laser irradiation |
| 01/16/2003 | WO2003004724A1 Cvd system comprising a thermally differentiated substrate support |
| 01/16/2003 | WO2002089188A3 Semiconductor structures utilizing binary metal oxide layers |
| 01/16/2003 | WO2002048434A3 Gallium nitride materials and methods for forming layers thereof |
| 01/16/2003 | WO2001068957A9 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
| 01/16/2003 | US20030013275 Isotopically pure silicon-on-insulator wafers and method of making same |
| 01/16/2003 | US20030013223 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant III-V arsenide nitride substrate used to form the same |
| 01/16/2003 | US20030013222 Process for producing an epitaxial layer of gallium nitride by the HVPE method |
| 01/16/2003 | US20030013218 Structure and method for fabricating semiconductor structures and devices for detecting chemical reactant |
| 01/16/2003 | US20030012984 Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors |