Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
03/2003
03/25/2003US6537924 Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate
03/25/2003US6537655 Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof
03/25/2003US6537370 Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained
03/25/2003US6537369 SiGeC semiconductor crystal and production method thereof
03/20/2003WO2003023817A2 Process for forming semiconductor quantum dots with superior structural and morphological stability
03/20/2003WO2003023095A1 Semiconductor wafer and its manufacturing method
03/20/2003WO2003023093A2 Susceptor with epitaxial growth control devices and epitaxial reactor using the same
03/20/2003US20030053559 Frequency offset estimation for communication systems method and device for inter symbol interference
03/20/2003US20030052080 Improving bone bonding; acid etch removal of native oxide layer from titanium device and roughening
03/20/2003US20030051667 Vacuum coating apparatus
03/19/2003EP1293587A1 Vacuum coating apparatus with central heater
03/19/2003EP1292726A1 Single crystal diamond prepared by cvd
03/19/2003CN1404531A Metal strip for epitaxial coatings and method for the production thereof
03/19/2003CA2666671A1 Single crystal gan substrate, method of growing same and method of producing same
03/18/2003US6534749 Thermal process apparatus for measuring accurate temperature by a radiation thermometer
03/18/2003US6534395 Method of forming graded thin films using alternating pulses of vapor phase reactants
03/18/2003US6534332 Method of growing GaN films with a low density of structural defects using an interlayer
03/17/2003WO2002023604A1 Semiconductor base material and method of manufacturing the material
03/17/2003CA2422624A1 Semiconductor base material and method of manufacturing the material
03/13/2003WO2003021012A1 Semiconductor crystal producing method
03/13/2003WO2003020497A1 Free-standing (al, ga, in)n and parting method for forming same
03/13/2003WO2002054467A3 Semiconductor structure including a monocrystalline conducting layer
03/13/2003US20030049916 Development of an intermediate-temperature buffer layer for the growth of high-quality GaxInyAlzN epitaxial layers by molecular beam epitaxy
03/13/2003US20030049898 Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
03/13/2003US20030047746 GaN substrate formed over GaN layer having discretely formed minute holes produced by use of discretely arranged growth suppression mask elements
03/13/2003US20030047132 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
03/13/2003US20030047129 Method of manufacturing compound single crystal
03/12/2003EP1291904A2 GaN substrate formed over GaN layer having discretely formed minute holes produced by selective growth
03/12/2003EP1290721A1 Preparation method of a coating of gallium nitride
03/12/2003EP1290251A1 Thick single crystal diamond layer method for making it and gemstones produced from the layer
03/12/2003EP1214462B1 Method for making a metal part coated with diamond and metal part obtained by said method
03/12/2003EP1029106A4 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor
03/12/2003CN1402306A Nitride semiconductor growing process
03/12/2003CN1401817A Metal organic chemical vapor deposition for ferroelectric film and annealing treatment
03/11/2003US6531654 Semiconductor thin-film formation process, and amorphous silicon solar-cell device
03/11/2003US6531408 Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same
03/11/2003US6531374 Overlay shift correction for the deposition of epitaxial silicon layer and post-epitaxial silicon layers in a semiconductor device
03/11/2003US6531235 Silicon, a buffer layer, template layer comprises a perovskite oxide
03/11/2003US6530994 Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
03/11/2003US6530991 Method for the formation of semiconductor layer
03/11/2003US6530990 Susceptor designs for silicon carbide thin films
03/06/2003WO2003019622A2 System and method of fast ambient switching for rapid thermal processing
03/06/2003WO2003018883A1 High-temperature superconductive film having flat surface
03/06/2003WO2003018869A1 Method for coating oxidizable materials with oxide-containing layers
03/06/2003WO2003018466A2 Catalyst for carbon nanotube growth
03/06/2003WO2002052643A3 Semiconductor wafer manufacturing process
03/06/2003US20030045128 Wafer transfer method performed with vapor thin film growth system and wafer support member used for this method
03/06/2003US20030045103 Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device
03/06/2003US20030045102 Method of manufacturing compound single crystal
03/06/2003US20030045075 Method of selective epitaxial growth for semiconductor devices
03/06/2003US20030045017 Method for fabricating III-V Group compound semiconductor
03/06/2003US20030044616 Semiconductor wafer and vapor phase growth apparatus
03/06/2003US20030044538 Deposition methods
03/06/2003US20030042419 Method and apparatus for detecting a wafer's posture on a susceptor
03/06/2003US20030041910 Fluid control apparatus
03/06/2003US20030041799 Modified susceptor for use in chemical vapor deposition process
03/06/2003US20030041798 Coated silicon wafer and process for its production
03/06/2003DE10119463C2 Verfahren zur Herstellung einer Chalkogenid-Halbleiterschicht des Typs ABC¶2¶ mit optischer Prozesskontrolle A process for producing a chalcogenide semiconductor layer of the type ABC¶2¶ with optical process control
03/05/2003EP1288347A2 Method of manufacturing compund single crystal
03/05/2003EP1288346A2 Method of manufacturing compound single crystal
03/05/2003EP1288163A2 Purified silicon production system
03/05/2003EP1287188A1 Epitaxial silicon wafer free from autodoping and backside halo
03/05/2003EP1287187A2 Modified susceptor for use in chemical vapor deposition process
03/05/2003EP1129238B1 Production of bulk single crystals of silicon carbide
03/04/2003US6528394 Growth method of gallium nitride film
03/04/2003US6527857 Method and apparatus for growing a gallium nitride boule
02/2003
02/27/2003WO2003017345A1 Chemical vapor phase epitaxial device
02/27/2003WO2003016600A1 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate
02/27/2003WO2002080228A3 Structure including cubic boron nitride films
02/27/2003WO2002080225A3 Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques
02/27/2003US20030040167 Compound crystal and method of manufacturing same
02/27/2003US20030039766 Mutlistage pressurized vapor deposition; for semiconductors
02/27/2003US20030039750 Using alumina nanoparticles coating with copper catalyst
02/27/2003US20030038302 Nitride semiconductor growing process
02/27/2003US20030038299 Semiconductor structure including a compliant substrate having a decoupling layer, device including the compliant substrate, and method to form the structure and device
02/27/2003US20030038128 Heating device of the light irradiation type
02/27/2003US20030038127 Annealing, diffusion, oxidation, doping,and vapor deposition; semiconductors
02/27/2003US20030037724 Axial gradient transport appatatus and process for producing large size, single crystals of silicon carbide
02/27/2003US20030037723 High throughput epitaxial growth by chemical vapor deposition
02/27/2003US20030037722 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
02/26/2003EP0873575B1 Device for producing oxidic thin films
02/26/2003EP0689618B1 Method and apparatus for the combustion chemical vapor deposition of films and coatings
02/26/2003CN1398661A Exhaust recovering and treating method and plant for chemical vapor deposition
02/25/2003US6524969 High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
02/25/2003US6524385 Single crystal SiC composite material for producing a semiconductor device, and a method of producing the same
02/20/2003WO2003015143A1 Group iii nitride semiconductor film and its production method
02/20/2003WO2003015141A1 Controlling anti-phase domains in semiconductor structures
02/20/2003WO2003014427A1 System and method for producing synthetic diamond
02/20/2003WO2003014414A1 Rotating susceptor and method of processing substrates
02/20/2003WO2002093619A3 Semiconductor structures and devices utilizing a compliant substrate
02/20/2003WO2002093618A3 Semiconductor structure including low-leakage, high crystalline dielectric
02/20/2003WO2002081788A9 Method for h2 recycling in semiconductor processing system
02/20/2003WO2002031839A9 N-type doping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
02/20/2003US20030036268 Low temperature load and bake
02/20/2003US20030034523 Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance
02/20/2003US20030034500 Semiconductor structure including a zintl material buffer layer, device including the structure, and method of forming the structure and device
02/20/2003US20030033974 Layered substrates for epitaxial processing, and device
02/20/2003US20030033973 Ammonia for use in manufacture of gan-type compound semiconductor and method for manufacturing gan-type compound semiconductor
02/20/2003CA2456847A1 System and method for producing synthetic diamond
02/19/2003CN1398430A Semiconductor devices
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