| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 05/08/2003 | WO2003038868A2 High resistivity silicon carbide single crystal and method of producing it |
| 05/08/2003 | WO2003038144A1 Method and device for depositing especially crystalline layers onto especially crystalline substrates |
| 05/08/2003 | US20030085426 Semiconductor device, method of forming epitaxial film, and laser ablation device |
| 05/08/2003 | US20030084839 Apparatus and method for diamond production |
| 05/08/2003 | CA2464855A1 Induction heating devices and methods for controllably heating an article |
| 05/07/2003 | EP1307903A1 Method of controlling stress in gallium nitride films deposited on substrates |
| 05/07/2003 | CN1416591A 半导体结构 Semiconductor structure |
| 05/07/2003 | CN1416590A 半导体结构 Semiconductor structure |
| 05/07/2003 | CN1416153A Combination of heating furnace and loading tool of semiconductor substrate and mfg. method of semiconductor devic |
| 05/06/2003 | US6559467 P-n heterojunction-based structures utilizing HVPE grown III-V compound layers |
| 05/06/2003 | US6559038 Method for growing p-n heterojunction-based structures utilizing HVPE techniques |
| 05/06/2003 | US6558995 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
| 05/06/2003 | CA2263352C Single crystal sic and a method of producing the same |
| 05/02/2003 | EP1306890A2 Semiconductor substrate and device comprising SiC and method for fabricating the same |
| 05/02/2003 | EP1306858A1 Ultraviolet-transparent conductive film and process for producing the same |
| 05/02/2003 | EP1305823A1 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide buffer layer |
| 05/02/2003 | EP1305820A1 Method for heating a semiconductor wafer in a process chamber, and process chamber |
| 05/02/2003 | EP1305161A1 Electronic and optical materials |
| 05/01/2003 | WO2003036698A2 Method of depositing high-quality sige on sige substrates |
| 05/01/2003 | WO2003036697A2 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |
| 05/01/2003 | US20030082833 Method for fabricating semiconductor structures utilizing the formation of a compliant substrate |
| 05/01/2003 | US20030082300 Vapor deposition using silane compound; uniform thickness |
| 05/01/2003 | US20030080384 Semiconductor substrate, semiconductor device and method for fabricating the same |
| 05/01/2003 | US20030080345 Single crystal GaN substrate, method of growing same and method of producing same |
| 05/01/2003 | US20030080325 Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth |
| 05/01/2003 | US20030079689 Induction heating devices and methods for controllably heating an article |
| 05/01/2003 | US20030079676 High resistivity silicon carbide single crystal |
| 04/30/2003 | CN1414605A Semiconductor substrate, semiconductor element and its manufacturing method |
| 04/29/2003 | US6555845 Method for manufacturing group III-V compound semiconductors |
| 04/29/2003 | US6555452 Method for growing p-type III-V compound material utilizing HVPE techniques |
| 04/29/2003 | US6555167 Method for growing high quality group-III nitride thin film by metal organic chemical vapor deposition |
| 04/29/2003 | US6554896 Epitaxial growth substrate and a method for producing the same |
| 04/24/2003 | WO2003034560A1 Method for fabricating semiconductor light emitting element, semiconductor light emitting element, method for fabricating semiconductor element, semiconductor element, method for fabricating element and element |
| 04/24/2003 | WO2003033781A1 Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
| 04/24/2003 | WO2002048701A3 Nanosensors |
| 04/24/2003 | US20030077883 Deposition method, deposition apparatus, and semiconductor device |
| 04/24/2003 | US20030075109 Vapor phase growth apparatus |
| 04/24/2003 | US20030075100 Method of manufacturing high voltage schottky diamond diodes with low boron doping |
| 04/23/2003 | EP1304749A1 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate |
| 04/22/2003 | US6551929 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| 04/22/2003 | US6551406 Apparatus for growing thin films |
| 04/22/2003 | US6550158 Substrate handling chamber |
| 04/17/2003 | WO2003031680A1 Methods for the production of components and ultra high vacuum cvd reactor |
| 04/17/2003 | WO2001099155A3 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate |
| 04/17/2003 | US20030073293 In situ growth of oxide and silicon layers |
| 04/17/2003 | US20030073278 Oxide film forming method |
| 04/17/2003 | US20030071276 Epitaxial growth of nitride semiconductor device |
| 04/17/2003 | US20030070611 SiC single crystal, method for manufacturing SiC single crystal, SiC water having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device |
| 04/17/2003 | US20030070610 Method and device for producing group III-N, group III-V-N and metal-nitrogen component structures on Si substrates |
| 04/17/2003 | US20030070608 Method for producing components and ultrahigh vacuum CVD reactor |
| 04/17/2003 | US20030070607 Method for producing group III nitride compound semiconductor |
| 04/16/2003 | EP1302977A2 Method for producing group III nitride compound semiconductor |
| 04/16/2003 | EP1151155B1 Cdv method of and reactor for silicon carbide monocrystal growth |
| 04/16/2003 | EP1114210A4 Low-temperature process for forming an epitaxial layer on a semiconductor substrate |
| 04/16/2003 | CN1411035A Single crystal gallium nitride substrate, method for growing single crystal gallium nitride and method for mfg. substrate thereof |
| 04/15/2003 | US6547876 Apparatus for growing epitaxial layers on wafers by chemical vapor deposition |
| 04/15/2003 | US6547875 Epitaxial wafer and a method for manufacturing the same |
| 04/10/2003 | WO2003030251A1 Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer |
| 04/10/2003 | WO2003029516A1 Apparatus for inverted cvd |
| 04/10/2003 | WO2003009344A3 Iii-v arsenide nitride semiconductor substrate |
| 04/10/2003 | WO2002084729A3 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring |
| 04/10/2003 | US20030068869 Dopant precursors and processes |
| 04/10/2003 | US20030068851 Dopant precursors and processes |
| 04/10/2003 | US20030068502 A surface treatment to form a quality, ultra-thin silicon wafer, first by smoothing the surface, setting annealing; high speed pulling a silicon ingot or rapidly cooling a pulled single crystal, slicing a silicon wafer off from ingot |
| 04/10/2003 | US20030066587 Susceptor for semiconductor manufacturing equipment and process for producing the same |
| 04/10/2003 | CA2462102A1 Apparatus for inverted cvd |
| 04/09/2003 | EP1300877A1 Plasma processing device |
| 04/09/2003 | EP1300875A1 Plasma processing device |
| 04/09/2003 | EP1299900A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 04/09/2003 | EP0959148B1 Method for producing diamond films using a vapour-phase synthesis system |
| 04/09/2003 | CN1409778A Magnesium-doped III-V nitrides & Methods |
| 04/09/2003 | CA2670071A1 Gan substrate, method of growing gan and method of producing gan substrate |
| 04/08/2003 | US6544869 Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device |
| 04/08/2003 | US6544867 Molecular beam epitaxy (MBE) growth of semi-insulating C-doped GaN |
| 04/08/2003 | US6544339 Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing |
| 04/08/2003 | CA2264317C Susceptor for semiconductor manufacturing equipment and process for producing the same |
| 04/03/2003 | WO2003027363A1 Method for growing low-defect single crystal heteroepitaxial films |
| 04/03/2003 | US20030064225 Diamond-coated member |
| 04/02/2003 | EP1298709A2 III-nitride epitaxial substrate, epitaxial substrate for III-nitride element and III-nitride element |
| 04/02/2003 | EP1298234A2 Method of manufacturing a single crystal substrate |
| 04/02/2003 | EP1297560A2 Thermally processing a substrate |
| 04/02/2003 | EP1044291B1 In situ growth of oxide and silicon layers |
| 04/01/2003 | US6541355 Method of selective epitaxial growth for semiconductor devices |
| 04/01/2003 | US6541295 Method of fabricating a whispering gallery mode resonator using CVD EPI and a bonded silicon wafer |
| 04/01/2003 | US6541117 Silicon epitaxial wafer and a method for producing it |
| 03/27/2003 | WO2003025988A1 Method for the production of iii-v- nitride-conductor-based semiconductor layers |
| 03/27/2003 | WO2003025263A1 Nitride semiconductor substrate, its manufacturing method, and semiconductor optical device using the same |
| 03/27/2003 | WO2003024876A2 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication |
| 03/27/2003 | WO2002097172A3 Molecular beam epitaxy equipment |
| 03/27/2003 | US20030056719 Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
| 03/27/2003 | US20030056718 Method of manufacturing single crystal substrate |
| 03/27/2003 | US20030056716 Esrf source for ion plating epitaxial deposition |
| 03/27/2003 | CA2460996A1 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication |
| 03/26/2003 | EP1296364A1 Method for forming thin film and apparatus for forming thin film |
| 03/26/2003 | EP1296362A2 Single crystal GaN substrate, method of growing same and method of producing same |
| 03/26/2003 | EP1295971A2 Nickel based supporting material and process for its manufacture |
| 03/26/2003 | EP1295323A1 Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
| 03/26/2003 | EP1294640A1 Method and apparatus for production of high purity silicon |
| 03/26/2003 | CN1405903A Single Crystal gallium nitride base board and its growth method and manufacture method |
| 03/25/2003 | US6538237 Apparatus for fixing position of furnace tube in semiconductor processing furnace comprising two clamp halves, each in half-circular shape, for engaging flange on tube to base, and means for mounting two clamp halves to base |