Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
07/2003
07/03/2003US20030121469 Method and apparatus of growing a thin film
07/03/2003US20030121468 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
07/02/2003EP1323851A2 Method for fabricating a III nitride film and products and elements obtained therefrom
07/02/2003EP1323671A1 Process for the fabrication of at least one nanotube between two electrically conductive elements and device for carrying out this process
07/02/2003EP1323182A2 Apparatus and method for reducing contamination on thermally processed semiconductor substrates
07/02/2003EP1322801A1 Gas inlet mechanism for cvd-method and device
07/02/2003EP1322797A1 Method of growing a thin film onto a substrate
07/02/2003CN1113113C Process for growing gallium nitride and its compound film
07/01/2003US6586819 Single crystal, InN, GaN, or AlN or a mixed crystal InGaAlN
07/01/2003US6586778 Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts
07/01/2003US6585823 Atomic layer deposition
06/2003
06/26/2003WO2003052177A1 Coloured diamond
06/26/2003WO2003052174A2 Boron doped diamond
06/26/2003US20030119288 Method for fabricating a semiconductor device and a substrate processing apparatus
06/26/2003US20030119283 Vapor-phase epitaxial growth method
06/26/2003US20030118746 A mechanical cell for vacuum and vapor deposition; heater, injection pipes, a transparent window for applying laser beam to the substrate
06/26/2003US20030118727 Supplying substrate, metal powders, and carbon-containing reactant gas to chemical vapor deposition system under high temperature to form nanotubes having multiple junctions above substrate, exhibiting two- or three-dimensional web structures
06/26/2003US20030116084 Method and apparatus for producing silicon carbide single crystal
06/25/2003EP1321545A1 Method for producing particles with diamond structure
06/25/2003EP1320870A2 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
06/25/2003EP1320637A2 Forming a single crystal semiconductor film on a non-crystalline surface
06/25/2003CN1426497A III-V nitride substrate boule and method of making and using same
06/24/2003US6583024 High resistivity silicon wafer with thick epitaxial layer and method of producing same
06/24/2003US6582513 System and method for producing synthetic diamond
06/24/2003US6582221 Wafer boat and method for treatment of substrates
06/19/2003WO2002047127A3 Pyroelectric device on a monocrystalline semiconductor substrate
06/19/2003US20030114017 Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
06/19/2003US20030113986 Method of producing semiconductor device
06/19/2003US20030113948 Low threading dislocation density relaxed mismatched epilayers without high temperature growth
06/19/2003US20030111009 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
06/19/2003US20030111008 Method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates
06/18/2003EP1319241A2 Liquid gas exchanger
06/17/2003US6580104 Elimination of contaminants prior to epitaxy and related structure
06/17/2003US6580098 Method for manufacturing gallium nitride compound semiconductor
06/17/2003US6579780 Multilayer intermetallic
06/17/2003US6579374 Apparatus for fabrication of thin films
06/17/2003US6579361 Chemical vapor deposition epitaxial reactor having two reaction chambers alternatively actuated and actuating method thereof
06/17/2003US6579359 Method of crystal growth and resulted structures
06/12/2003WO2003049160A2 Method of producing integrated semiconductor components on a semiconductor substrate
06/12/2003WO2003048430A1 Device and method for producing, removing or treating layers on a substrate
06/12/2003US20030109115 High resistivity silicon wafer with thick epitaxial layer and method of producing same
06/12/2003US20030109095 Growth of epitaxial semiconductor material with improved crystallographic properties
06/12/2003US20030107098 Ultraviolet-transparent conductive film and process for producing the same
06/12/2003US20030106490 Apparatus and method for fast-cycle atomic layer deposition
06/10/2003US6576571 Process of vapor phase growth of nitride semiconductor
06/10/2003US6576533 Method of forming semiconductor thin film of group III nitride compound semiconductor.
06/10/2003US6576054 Method for fabricating bulk AlGaN single crystals
06/10/2003US6576053 Method of forming thin film using atomic layer deposition method
06/10/2003US6575622 Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using an in-situ wafer temperature optical probe
06/05/2003WO2003046966A1 Susceptor, gaseous phase growing device, device and method for manufacturing epitaxial wafer, and epitaxial wafer
06/04/2003EP1317004A1 Fractal structure and method of forming it
06/04/2003EP1315854A2 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
06/04/2003EP1315853A1 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
06/04/2003EP1092233A4 Method of forming a thin film
06/04/2003EP0994973B1 Apparatus and method for nucleation and deposition of diamond using hot-filament dc plasma
06/04/2003CN1110838C Silicon substrate and producing method thereof
06/03/2003US6573164 Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE
06/03/2003US6572924 Two exhaust paths and three way flow control valve; reducing contamination of semiconductor wafers
06/03/2003US6572705 Method and apparatus for growing thin films
05/2003
05/30/2003WO2003044840A1 Reactive codoping of gaalinp compound semiconductors
05/29/2003US20030097977 In-situ post epitaxial treatment process
05/28/2003EP1314800A1 Method for preparing single crystal oxide thin film
05/28/2003EP1314189A2 Doped elongated semiconductors, their growth and applications
05/28/2003EP1313897A1 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
05/28/2003EP1313891A1 Cvd coating device
05/28/2003EP0817874B1 Carbide nanofibrils and method of making same
05/28/2003CN1420978A Hot wall rapid thermal processor
05/28/2003CN1109779C Dual vertical thermal treatment furnace
05/28/2003CN1109775C Hard carbon coating
05/27/2003US6570096 Heating, quenching, transformation
05/27/2003US6569765 Hybrid deposition system and methods
05/27/2003US6569239 Silicon epitaxial wafer and production method therefor
05/27/2003US6569238 Apparatus and method for depositing semi conductor film
05/27/2003US6569237 Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer
05/22/2003WO2003024876A3 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication
05/22/2003US20030094130 Low mass, rapid heating furnace in combination with three pumping packages
05/21/2003EP1313134A1 Semiconductor polysilicon component and method of manufacture thereof
05/20/2003US6565655 High vacuum apparatus for fabricating semiconductor device and method for forming epitaxial layer using the same
05/15/2003WO2003041137A1 METHOD OF MANUFACTURING AN InGaNAs COMPOUND SEMICONDUCTOR THIN FILM AND THE THIN FILM MANUFACTURED BY THE SAME
05/15/2003WO2003040636A1 System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
05/15/2003WO2003040440A2 Apparatus and method for diamond production
05/15/2003WO2003040426A1 Zinc oxide layer and method for the production thereof
05/15/2003WO2003040036A1 Method for producing silicon
05/15/2003US20030091738 High speed conveying substrate; controlling microstructure
05/15/2003US20030089992 Plasma enhanced chemical vapor deposition in the presence of an inert gas; low dielectric constant; useful in a damascene structure; passivation layer, resistant to moisture
05/15/2003US20030089921 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate having a niobium concentration
05/15/2003US20030089899 Nanoscale wires and related devices
05/15/2003US20030089698 Hot wall rapid thermal processor
05/14/2003EP0837495B1 Vapor phase growth apparatus
05/13/2003US6563118 Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
05/13/2003US6562702 Semiconductor device and method and apparatus for manufacturing semiconductor device
05/13/2003US6562701 Method of manufacturing nitride semiconductor substrate
05/13/2003US6562140 Apparatus for fabrication of thin films
05/13/2003US6562128 In-situ post epitaxial treatment process
05/13/2003US6562124 Method of manufacturing GaN ingots
05/13/2003US6561796 Heating in a gas with a thermal conductivity and mean free path greater than that of oxygen, or by heating under a pressure less than 0.1 Torr.
05/13/2003CA2153848C Oxide thin film having quartz crystal structure and process for producing the same
05/08/2003WO2003039195A2 Induction heating devices and methods for controllably heating an article
05/08/2003WO2003038878A2 Method for fabricating semiconductor structures
05/08/2003WO2003038873A2 Removing an amorphous oxide from a monocrystalline surface
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