| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 08/14/2003 | US20030150385 Apparatus for fabrication of thin films |
| 08/14/2003 | US20030150378 Energy efficient method for growing polycrystalline silicon |
| 08/13/2003 | EP1335044A1 Zinc oxide semiconductor material |
| 08/13/2003 | EP1334222A1 Cvd reactor with graphite-foam insulated, tubular susceptor |
| 08/13/2003 | EP1242647B1 Method of depositing transition metal nitride thin films |
| 08/13/2003 | EP1071913A4 Compact external torch assembly for semiconductor processing |
| 08/13/2003 | CN1436365A Preparation method of coating of gallium nitride |
| 08/12/2003 | US6605535 Method of filling trenches using vapor-liquid-solid mechanism |
| 08/12/2003 | US6605151 Oxide thin films and composites and related methods of deposition |
| 08/07/2003 | WO2003065465A2 Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
| 08/07/2003 | WO2003065429A1 GaN COMPOUND SEMICONDUCTOR CRYSTAL MAKING METHOD |
| 08/07/2003 | WO2003064029A1 Pulsed arc molecular beam process |
| 08/07/2003 | WO2002044445A9 Method for depositing especially, crystalline layers and device for carrying out the method |
| 08/07/2003 | US20030145783 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
| 08/06/2003 | CN1434884A Modified susceptor for use in chemical vapor deposition process |
| 08/06/2003 | CN1434883A Epitaxial silicon wafer free from autodoping and backside halo |
| 08/06/2003 | CN1434482A Method for making gallium nitride crystal |
| 08/06/2003 | CN1434153A Method for preparing expitaxial hetero crystal and film material on yield substrate |
| 08/06/2003 | CN1117389C Semiconductor layer mixed with chemical vapor deposited rare-earth |
| 08/05/2003 | US6602808 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process |
| 08/05/2003 | US6602613 Heterointegration of materials using deposition and bonding |
| 07/31/2003 | WO2003063217A1 Epitaxial growth method |
| 07/31/2003 | WO2003063216A1 Method of forming a thin film using atomic layer deposition(ald) |
| 07/31/2003 | WO2003063215A1 Nitride semiconductor device manufacturing method |
| 07/31/2003 | WO2003062507A2 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material |
| 07/31/2003 | WO2003062146A1 Plasma synthesis of hollow nanostructures |
| 07/31/2003 | US20030143823 Method of operating a processing chamber having multiple stations |
| 07/31/2003 | US20030143747 Active pulse monitoring in a chemical reactor |
| 07/31/2003 | US20030143438 Buffer architecture for biaxially textured structures and method of fabricating same |
| 07/31/2003 | US20030143327 Depositing a catalytic material onto the apex of tip of atomic force microscope; subjecting catalytic material to chemical vapor deposition to initiate growth of carbon nanotube such that carbon nanotube extends from the apex of tip |
| 07/31/2003 | US20030142761 Frequency offset estimation apparatus for intersymbol interference channels |
| 07/31/2003 | US20030140854 Apparatus for growing thin films |
| 07/31/2003 | US20030140852 Method and device for regulating the differential pressure in epitaxy reactors |
| 07/31/2003 | US20030140846 Selective growth method, and semiconductor light emitting device and fabrication method thereof |
| 07/30/2003 | EP1330846A1 Electrode and electron emission applications for n-type doped nanocrystalline materials |
| 07/30/2003 | EP1144719B1 Polycrystalline diamond layer with optimized surface properties |
| 07/30/2003 | EP0832407B1 Passive gas substrate thermal conditioning apparatus and method |
| 07/29/2003 | US6600203 Semiconductor device with silicon carbide suppression layer for preventing extension of micropipe |
| 07/29/2003 | US6599816 Method of manufacturing silicon epitaxial wafer |
| 07/29/2003 | US6599133 Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques |
| 07/24/2003 | WO2003060967A1 Susceptor for epitaxial growth and epitaxial growth method |
| 07/24/2003 | WO2003060965A1 Semiconductor wafer and method for producing the same |
| 07/24/2003 | WO2002097861A3 Semiconductor device, semiconductor layer and production method thereof |
| 07/24/2003 | WO2002093623A3 Assembly comprising heat distributing plate and edge support |
| 07/24/2003 | US20030138561 Thermal cracking chemical vapor deposition method for synthesizing nano-carbon material |
| 07/24/2003 | US20030136986 Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same |
| 07/24/2003 | US20030136333 Preparation method of a coating of gallium nitride |
| 07/24/2003 | US20030136332 In situ application of etch back for improved deposition into high-aspect-ratio features |
| 07/23/2003 | EP1329540A2 An apparatus for the delivery of precursors in the vapour phase to epitaxial reactor sites |
| 07/23/2003 | CN1115715C Method of processing semiconductor film and semiconductor device produced by such method |
| 07/22/2003 | US6596973 Heater power adjustment; nonlinear neural network; semiconductors |
| 07/22/2003 | US6596377 Thin film product and method of forming |
| 07/22/2003 | US6596343 Tetraethylorthosilicate Si(OC2H5)4, as a suitable organometallic compound which, when coming in contact with hydroxyl radicals, decomposes or breaks down into SiO2 |
| 07/22/2003 | US6596095 Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof |
| 07/22/2003 | US6596086 Apparatus for thin film growth |
| 07/22/2003 | US6596080 Silicon carbide and method for producing the same |
| 07/22/2003 | US6596079 III-V nitride substrate boule and method of making and using the same |
| 07/17/2003 | WO2003036698A3 Method of depositing high-quality sige on sige substrates |
| 07/17/2003 | WO2002031891A9 Electrode and electron emission applications for n-type doped nanocrystalline materials |
| 07/17/2003 | US20030134491 Vapor growth method, semiconductor producing method, and production method for semiconductor device |
| 07/17/2003 | US20030132433 Semiconductor structures including a gallium nitride material component and a silicon germanium component |
| 07/17/2003 | US20030131787 Tunable CVD diamond structures |
| 07/16/2003 | EP1328014A1 Semiconductor base material and method of manufacturing the material |
| 07/15/2003 | US6594293 Relaxed InxGa1-xAs layers integrated with Si |
| 07/15/2003 | US6593159 Semiconductor substrate, semiconductor device and method of manufacturing the same |
| 07/15/2003 | US6593016 Group III nitride compound semiconductor device and producing method thereof |
| 07/15/2003 | US6592839 Tailoring nanocrystalline diamond film properties |
| 07/15/2003 | US6592675 Rotating susceptor |
| 07/15/2003 | US6592674 Chemical vapor deposition apparatus and chemical vapor deposition method |
| 07/15/2003 | US6592664 Method and device for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate |
| 07/10/2003 | WO2003056073A1 Group iii nitride semiconductor substrate and its manufacturing method |
| 07/10/2003 | WO2003012841A3 Semiconductor structures and devices not lattice matched to the substrate |
| 07/10/2003 | US20030129848 Pre-cleaning method of substrate for semiconductor device |
| 07/10/2003 | US20030129826 Graded thin films |
| 07/10/2003 | US20030129307 Forming flexibible thin films via chemical vapor deposition, pulse-laser deposition, molecular beam epitaxy, and sputtering; acoustics; telecommunications |
| 07/10/2003 | US20030129305 Microwave plasma enhanced chemical vapor deposition to form planar/plate-like graphite sheets |
| 07/10/2003 | US20030127043 Reacting pulses of a tungsten-containing precursor and a reducing gas |
| 07/10/2003 | US20030127041 Lapping, mechanical polishing, and reducing internal stress of a gallium, aluminum and indium nitride wafer by thermal annealing or chemical etching; crystallographic plane surfaces |
| 07/09/2003 | EP1325177A1 Method for depositing, in particular, crystalline layers, a gas inlet element, and device for carrying out said method |
| 07/09/2003 | EP1240366B1 Chemical vapor deposition reactor and process chamber for said reactor |
| 07/09/2003 | EP1093664A4 Temperature control system for a thermal reactor |
| 07/09/2003 | EP0779859B1 Oriented crystal assemblies |
| 07/09/2003 | CN1114225C Semiconductor film mixed with rare-earth |
| 07/09/2003 | CN1113977C Method for supplying gas for epitaxial growth and its apparatus |
| 07/08/2003 | US6590236 Semiconductor structure for use with high-frequency signals |
| 07/08/2003 | US6589873 Process for manufacturing a semiconductor device |
| 07/08/2003 | US6589856 Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
| 07/08/2003 | US6589352 Self aligning non contact shadow ring process kit |
| 07/08/2003 | US6589335 Relaxed InxGa1-xAs layers integrated with Si |
| 07/08/2003 | US6589333 Method for the manufacture of a substrate, substrate manufactured in accordance with this method, carrier wafer and diamond jewel |
| 07/03/2003 | WO2003054976A1 Boron phosphide-based semiconductor device and production method thereof |
| 07/03/2003 | WO2003054939A1 Method for depositing iii-v semiconductor layers on a non iii-v substrate |
| 07/03/2003 | WO2003054929A2 Method for depositing iii-v semiconductor layers on a non-iii-v substrate |
| 07/03/2003 | WO2003054257A1 Method for producing particles with diamond structure |
| 07/03/2003 | WO2003054256A2 Method and device for depositing crystalline layers on crystalline substrates |
| 07/03/2003 | WO2003007336A3 Wafer boat with arcuate wafer support arms |
| 07/03/2003 | US20030124820 Systems and methods for epitaxially depositing films on a semiconductor substrate |
| 07/03/2003 | US20030124717 Method of manufacturing carbon cylindrical structures and biopolymer detection device |
| 07/03/2003 | US20030124393 Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element |
| 07/03/2003 | US20030121887 Multi-component substances and processes for preparation thereof |