Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
09/2003
09/25/2003US20030180580 GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits
09/25/2003US20030180461 Process of direct growth of carbon nanotubes on a substrate at low temperature
09/25/2003US20030180460 Applying aqueous mixture of sodium hypochlorite, hydrogen peroxide, sodium hydrosulfite, calcium hypochlorite, or potassium permanganate on debris deposits; drying, washing off residues
09/25/2003US20030178702 Light emitting semiconductor device and method of fabricating the same
09/25/2003US20030178634 Method for manufacturing gallium nitride compound semiconductor
09/25/2003US20030177977 Gas-admission element for CVD processes, and device
09/24/2003EP1346085A1 Methods and apparatus for producing m'n based materials
09/24/2003CN1444295A Device and method for mfg. GaN base
09/24/2003CN1121891C Semiconductor mfg. system with getter safety device
09/23/2003US6624009 Forming a crystalline semiconductor film on a glass substrate
09/23/2003US6623877 Usable for substrate of semiconductor device such as light-emitting diode or high speed IC chip
09/23/2003US6623560 Crystal growth method
09/23/2003CA2138282C Process for the preparation of trialkyl compounds of group 3a metals
09/18/2003WO2003077311A1 Method and resulting structure for manufacturing semiconductor substrate
09/18/2003WO2002048701A9 Nanosensors
09/18/2003US20030176062 Methods For Treating Pluralities of Discrete Semiconductor Substrates
09/18/2003US20030176061 Apparatuses For Treating Pluralities of Discrete Semiconductor Substrates
09/18/2003US20030176060 Methods For Treating Pluralities Of Discrete Semiconductor Substrates
09/18/2003US20030176057 Methods for treating pluralities of discrete semiconductor substrates
09/18/2003US20030176047 Methods for treating pluralities of discrete semiconductor substrates
09/18/2003US20030176001 Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device
09/18/2003US20030175531 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure
09/18/2003US20030173206 Process for making at least one nanotube between two electrically conducting elements and device for implementing such a process
09/18/2003US20030172869 Method for preparing low-resistant p-type srtio3
09/17/2003EP1345260A1 Vapor growth method, semiconductor producing method, and production method for semiconductor device
09/17/2003EP1344246A2 Method for making a substrate in particular for optics, electronics or optoelectronics and resulting substrate
09/17/2003EP1343927A2 Gallium nitride materials and methods for forming layers thereof
09/17/2003EP1343926A1 Method for depositing especially crystalline layers
09/17/2003EP0996767B1 Reflective surface for cvd reactor walls
09/16/2003US6620710 Forming a single crystal semiconductor film on a non-crystalline surface
09/11/2003US20030170503 III nitride epitaxial substrate, epitaxial substrate for III nitride element and III nitride element
09/11/2003US20030170403 Atomic layer deposition apparatus and method
09/11/2003US20030170388 Method for forming thin film and appatus for forming thin film
09/11/2003US20030168174 Gas cushion susceptor system
09/11/2003US20030168002 Nanostructures for hetero-expitaxial growth on silicon substrates
09/10/2003EP1342261A1 Method for producing a positively doped semiconductor with large forbidden band
09/10/2003EP1342075A2 Nanosensors
09/10/2003EP1341941A2 Metal strip for epitaxial coatings and method for the production thereof
09/10/2003EP1341718A1 Method and device for electronic cyclotron resonance plasma deposit of single-wall carbon nanotubes and resulting nanotubes
09/10/2003CN1441982A Nitride semiconductor substrate and method for manufacturing same, and nitride semiconductor device using said substrate
09/10/2003CN1441860A Single crystal diamond prepared by CVD
09/10/2003CN1441859A Method for making thick signal crystal diamond layer and gemstones produced from layer
09/09/2003US6617668 Methods and devices using group III nitride compound semiconductor
09/09/2003US6617261 Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
09/09/2003US6617235 Method of manufacturing Group III-V compound semiconductor
09/09/2003US6617060 Gallium nitride materials and methods
09/09/2003US6617010 Semiconductor thin film and thin film device
09/09/2003US6616986 Sequential chemical vapor deposition
09/09/2003US6616757 Method for achieving low defect density GaN single crystal boules
09/09/2003US6615871 Fluid control apparatus
09/04/2003WO2003073514A1 Group iii-v nitride semiconductor multilayer structure and its production process
09/04/2003WO2003073484A1 Crystal manufacturing method
09/04/2003WO2003072859A1 Direct synthesis of long single-walled carbon nanotube strands
09/04/2003WO2003072856A1 Process for producing group iii nitride compound semiconductor
09/04/2003WO2003007393A3 Semiconductor structures comprising a piezoelectric material and corresponding processes and systems
09/04/2003WO2002097864A3 Low temperature load and bake
09/04/2003US20030165697 SiGeC semiconductor crystals and the method producing the same
09/03/2003EP1339637A1 A process for the synthesis of nanotubes of transition metal dichalcogenides
09/03/2003EP1027474A4 Process tube with in situ gas preheating
09/03/2003CN1440566A Method and apparatus for forming epitaxial silicon wafer with denuded zone
09/03/2003CN1439748A Crystal film for components to emit blue light and preparation thereof
09/02/2003US6613385 Highly spin-polarized chromium dioxide thin films prepared by CVD using chromyl chloride precursor
09/02/2003US6613198 Pulsed arc molecular beam process
09/02/2003US6613143 Method for fabricating bulk GaN single crystals
08/2003
08/28/2003WO2003071588A1 Production method of sic monitor wafer
08/28/2003WO2003071504A1 Device for depositing thin layers with a wireless detection of process parameters
08/28/2003WO2003071011A1 Method and device for depositing semi-conductor layers
08/28/2003WO2003009357A3 Epitaxial semiconductor on insulator (soi) structures and devices
08/28/2003WO2002091441A3 Semiconductor device and method of making same
08/28/2003US20030162371 Boron phosphide-based semiconductor layer and vapor phase growth method thereof
08/28/2003US20030162370 Mixed crystal layer growing method and device, and semiconductor device
08/28/2003US20030162365 Epitaxial thin film forming method
08/28/2003US20030161950 Direct synthesis of long single-walled carbon nanotube strands
08/28/2003US20030160232 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
08/28/2003US20030159649 In-situ post epitaxial treatment process
08/27/2003EP1338683A2 Process for making an epitaxial layer of gallium nitride
08/27/2003EP1337700A1 Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow
08/27/2003EP1337683A1 Method for automatic organisation of microstructures or nanostructures and related device obtained
08/26/2003US6611005 Method for producing semiconductor and semiconductor laser device
08/26/2003US6610144 Method to reduce the dislocation density in group III-nitride films
08/21/2003WO2003069657A1 Method for production of a layer of silicon carbide or a nitride of a group iii element on a suitable substrate
08/21/2003WO2003069029A1 A susceptor provided with indentations and an epitaxial reactor which uses the same
08/21/2003WO2003069027A2 Energy efficient method for growing polycrystalline silicon
08/21/2003WO2003068699A1 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
08/21/2003WO2003068383A1 Method for carrying out homogeneous and heterogeneous chemical reactions using plasma
08/21/2003WO2003038878A3 Method for fabricating semiconductor structures
08/21/2003WO2003036697A3 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
08/21/2003US20030157787 Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
08/21/2003US20030157744 Method of producing an integrated circuit with a carbon nanotube
08/21/2003US20030157738 Method for manufacturing gallium nitride compound semiconductor
08/21/2003US20030157453 Boat for heat treatment and vertical heat treatment apparatus
08/21/2003US20030157376 III-V nitride substrate boule and method of making and using the same
08/21/2003US20030155586 Methods and devices using group III nitride compound semiconductor
08/21/2003US20030155584 Method of preparing nitrogen containing semiconductor material
08/21/2003CA2475589A1 Method for carrying out homogeneous and heterogeneous chemical reactions using plasma
08/20/2003EP1335997A1 Method and device for controlling the surface temperatures of substrates in a chemical vapour deposition reactor
08/20/2003EP1056594A4 A-site and/or b-site modified pbzrtio3 materials and films
08/20/2003EP1049820B1 Method for epitaxial growth on a substrate
08/14/2003US20030153168 3-5 Group compound semiconductor, process for producing the same, and compound semiconductor element using the same
08/14/2003US20030153165 Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element
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