Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2003
11/13/2003US20030209193 Atomic layer CVD
11/13/2003US20030209191 Ammonothermal process for bulk synthesis and growth of cubic GaN
11/13/2003US20030209185 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
11/13/2003CA2483403A1 High voltage switching devices and process for forming same
11/12/2003EP1361601A2 Method for producing a long wavelength indium gallium arsenide nitride (InGaAsN) active region
11/12/2003EP1361298A1 Semiconductor crystal growing method and semiconductor light-emitting device
11/11/2003US6645877 Method of operating a processing chamber having multiple stations
11/11/2003US6645574 Method of forming a thin film
11/11/2003US6645302 Vapor phase deposition system
11/06/2003WO2003091822A2 Method for producing nitrides and uses thereof as fluorescent markers and light-emitting diodes
11/06/2003WO2002048701A8 Nanosensors
11/06/2003WO2002041378A3 Semiconductor structure and process for fabricating same
11/06/2003US20030207589 Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
11/06/2003US20030207127 Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
11/06/2003US20030207125 Base substrate for crystal growth and manufacturing method of substrate by using the same
11/06/2003US20030205195 Group III nitride compound semiconductor device and producing method therefor
11/06/2003US20030205194 Process for manufacturing a semiconductor device
11/06/2003US20030205193 Method for achieving low defect density aigan single crystal boules
11/06/2003US20030205190 System and method for producing synthetic diamond
11/05/2003EP1358683A1 Method and device for producing an electronic gaas detector for x-ray detection for imaging
11/05/2003EP1358368A1 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
11/04/2003US6641938 An offcut angle of from about 6 to about 10 degrees; superior morphological and material properties.
10/2003
10/30/2003WO2003089696A1 Dislocation reduction in non-polar gallium nitride thin films
10/30/2003WO2003089695A1 Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
10/30/2003WO2003089694A1 NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
10/30/2003WO2002065517A3 Deposition method over mixed substrates using trisilane
10/30/2003US20030203646 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
10/30/2003US20030203640 Plasma etching apparatus
10/30/2003US20030203531 Defect-free semiconductor templates for epitaxial growth and method of making same
10/30/2003US20030203139 Free-standing and aligned carbon nanotubes and synthesis thereof
10/30/2003US20030203113 Method for atomic layer deposition (ALD) of silicon oxide film
10/30/2003US20030200917 Atomic layer deposition methods and chemical vapor deposition methods
10/30/2003US20030200914 Diamond film and method for producing the same
10/29/2003CN1125890C Apparatus and method for nucleotion and deposition of diamond using hot filament DC plasma
10/23/2003WO2003088361A1 Nanowire devices and methods of fabrication
10/23/2003WO2003088332A1 Method for forming silicon epitaxial layer
10/23/2003WO2003088325A1 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
10/23/2003WO2003087431A2 Deposition methods utilizing phased array microwave excitation, and deposition apparatuses
10/23/2003WO2003054256A3 Method and device for depositing crystalline layers on crystalline substrates
10/23/2003US20030198837 Comprises sapphire substrate with low temperature nucleation layer as buffer; polarization-induced electric fields have minimal effects
10/23/2003US20030198301 Method of epitaxial lateral overgrowth
10/23/2003CA2478624A1 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
10/22/2003EP1173632B1 Reaction chamber for an epitaxial reactor
10/22/2003CN1451173A Methods of fabricating gallium nitride semicnductor layers on substrates including non-gallium nitride posts and gallium nitride
10/22/2003CN1450198A Vapour deposition device for metal organic compound
10/21/2003US6635583 Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating
10/16/2003WO2003085711A1 VAPOR PHASE GROWTH METHOD FOR Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR, AND METHOD AND DEVICE FOR PRODUCING Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR
10/16/2003WO2003085175A1 Seed crystal of silicon carbide single crystal and method for producing ingot using same
10/16/2003WO2003023817A3 Process for forming semiconductor quantum dots with superior structural and morphological stability
10/16/2003WO2003005450A9 Nanoscale wires and related devices
10/16/2003WO2003005443A3 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure
10/16/2003WO2002095807A3 Silicon fixtures useful for high temperature wafer processing
10/16/2003WO2002081788A3 Method for h2 recycling in semiconductor processing system
10/16/2003US20030194875 Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies
10/16/2003US20030194508 Deposition methods utilizing microwave excitation, and deposition apparatuses
10/16/2003US20030192920 Chemical mix and delivery systems and methods thereof
10/15/2003CN1449458A Thin-film metallic oxide structure and process for fabricating same
10/15/2003CN1448536A Chemical raw material dispensing system
10/15/2003CN1124371C Device for producing high temperature silicon carbide semiconductor material
10/15/2003CN1124370C Method and apparatus for growing oriented whisker arrays
10/14/2003US6632725 Process for producing an epitaxial layer of gallium nitride by the HVPE method
10/14/2003US6632279 Method for growing thin oxide films
10/14/2003US6632277 Optimized silicon wafer gettering for advanced semiconductor devices
10/09/2003WO2003083902A2 Thermal production of nanowires
10/09/2003US20030190804 Simultaneous cyclical deposition in different processing regions
10/09/2003US20030189202 Nanowire devices and methods of fabrication
10/09/2003US20030188687 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
10/09/2003US20030188682 Method of growing oxide films
10/08/2003CN1447980A Thermally processing substrate
10/08/2003CN1447388A Method of mfg. Ôàó-V family compound semiconductor
10/08/2003CN1123653C Indium-doped strontium titanate material and its prepn. process
10/07/2003US6630692 III-Nitride light emitting devices with low driving voltage
10/07/2003US6630030 Method and apparatus for growing thin films
10/07/2003US6630024 Method for the production of an epitaxially grown semiconductor wafer
10/02/2003WO2003069027A3 Energy efficient method for growing polycrystalline silicon
10/02/2003WO2003052174A3 Boron doped diamond
10/02/2003US20030186517 Method of and apparatus for manufacturing semiconductor device
10/02/2003US20030186515 Methods for simultaneously depositing layers over pluralities of discrete semiconductor substrate
10/02/2003US20030186512 In a two-dimensional or three-dimensional lattice; coulomb blocking devices using quantum dots.
10/02/2003US20030186088 Crystal-growth substrate and a zno-containing compound semiconductor device
10/02/2003US20030186073 Heterointegration of materials using deposition and bonding
10/02/2003US20030183816 Compound semiconductor multilayer structure and bipolar transistor using the same
10/02/2003US20030183611 Electromagnetically levitated substrate support
10/02/2003US20030183160 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device
10/02/2003US20030183158 Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer
10/02/2003US20030183156 Chemical vapor deposition methods, atomic layer deposition methods, and valve assemblies for use with a reactive precursor in semiconductor processing
10/01/2003EP1349203A2 A crystal-growth substrate and a ZnO-containing compound semiconductor device
10/01/2003EP1348778A1 Method for obtaining high quality InGaAsN semiconductor
10/01/2003EP1242656B1 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites
10/01/2003CN1122731C Method for preparing monocrystal filament of zinc oxide directly from zinc sulfide
09/2003
09/30/2003US6627974 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
09/30/2003US6627552 Method for preparing epitaxial-substrate and method for manufacturing semiconductor device employing the same
09/30/2003US6627520 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
09/30/2003US6627260 Deposition methods
09/30/2003US6627050 Method and apparatus for depositing a tantalum-containing layer on a substrate
09/30/2003CA2313155C Group iii-v nitride semiconductor growth method and vapor phase growth apparatus
09/25/2003WO2003079415A2 Methods for fabricating strained layers on semiconductor substrates
09/25/2003WO2003078702A1 METHOD FOR PREPARING SiC CRYSTAL AND SiC CRYSTAL
09/25/2003WO2002065508A3 Dopant precursors and processes
09/25/2003US20030181024 Method for obtaining high quality InGaAsN semiconductor devices
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