Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
12/2003
12/23/2003US6667184 Single crystal GaN substrate, method of growing same and method of producing same
12/23/2003US6666949 Uniform temperature workpiece holder
12/23/2003US6666924 Reaction chamber with decreased wall deposition
12/23/2003US6666921 Chemical vapor deposition apparatus and chemical vapor deposition method
12/23/2003US6666920 Gas collector for providing an even flow of gasses through a reaction chamber of an epitaxial reactor
12/18/2003WO2003105219A1 A method of fabricating a substrate comprising a useful layer of a monocrystalline semiconductor material
12/18/2003WO2003104524A1 Processing device and processing method
12/18/2003WO2003049160A3 Method of producing integrated semiconductor components on a semiconductor substrate
12/18/2003WO2003019622A3 System and method of fast ambient switching for rapid thermal processing
12/18/2003US20030232487 Fabrication of substrates with a useful layer of monocrystalline semiconductor material
12/18/2003US20030232457 Method for fabricating a nitride semiconductor device
12/18/2003US20030230235 Dislocation reduction in non-polar gallium nitride thin films
12/18/2003US20030230233 Method of producing high quality relaxed silicon germanium layers
12/17/2003EP1371087A1 A device for epitaxially growing objects by cvd
12/17/2003EP1370709A1 A chemical vapor deposition process and apparatus thereof
12/17/2003CN1462060A GaN single crystal base, nitride type semiconductor optical growth base, nitride type semiconductor device and its producing method
12/16/2003US6664192 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
12/16/2003US6663989 Anisotropic; epitaxial; computers; data storage
12/16/2003US6663976 Laminate articles on biaxially textured metal substrates
12/11/2003WO2003103031A2 Formation of lattice-tuning semiconductor substrates
12/11/2003WO2003023093A3 Susceptor with epitaxial growth control devices and epitaxial reactor using the same
12/11/2003US20030228500 Electronic and optical materials
12/11/2003US20030226500 Atomic layer deposition apparatus and methods
12/11/2003US20030226499 Method for producing a positively doped semiconductor with large forbidden band
12/11/2003US20030226497 Method for producing powders made of gallium nitride and apparatus for producing the same
12/11/2003US20030226496 Bulk GaN and AlGaN single crystals
12/11/2003DE20220591U1 Process for depositing material from supply vessel comprises positioning the substrate and supply material in stack, introducing inert gas and reaction gas, expanding the gas flows, stopping the deposition, and cooling the substrate
12/10/2003EP1369905A2 Epitaxial substrates and semiconductor devices
12/10/2003EP1369506A1 Method of making photonic crystal
12/10/2003EP1368505A1 A ccvd method for producing tubular carbon nanofibers
12/10/2003CN1460729A Preparation f green light fallium nitride base LED epitaxial wafer by adopting multiquantum well
12/09/2003US6660535 Barium strontium titanate, (Sr,Ba)TiO3 (BST) by supplying BST sources into a chamber; and inducing textured growth of the film over the substrate in a uniform desired crystal orientation; metal-organic chemical vapor deposition (MOCVD)
12/09/2003US6660393 Reduced resistance
12/09/2003US6660083 Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE
12/04/2003WO2003099707A2 Method of altering the properties of a thin film and substrate implementing said method
12/04/2003WO2003039195A3 Induction heating devices and methods for controllably heating an article
12/04/2003WO2003009398A3 Structure and method for fabricating an optical bus
12/04/2003US20030224107 Atomic layer deposition; replacing mechanical valves with an improved precursor dosing system.
12/04/2003US20030221624 CVD coating device
12/04/2003US20030221621 Method and apparatus for processing semiconductor substrates with hydroxyl radicals
12/04/2003US20030221619 Reactor for extended duration growth of gallium containing single crystals
12/04/2003US20030221611 Fabrication method of semiconductor device and semiconductor device
12/04/2003US20030221608 Method of making photonic crystal
12/03/2003EP1367150A1 Production method for semiconductor crystal and semiconductor luminous element
12/03/2003CN1460296A Semiconductor device, semiconductor layer and production method thereof
12/03/2003CN1460289A Plasma processing device and semiconductor mfg. device
12/03/2003CN1129956C Growth method of III-V nitride semiconductors and gas phase growth apparatus
12/02/2003US6657232 Defect reduction in GaN and related materials
12/02/2003US6656838 Process for producing semiconductor and apparatus for production
12/02/2003US6656573 Method to grow self-assembled epitaxial nanowires
12/02/2003US6656285 Reactor for extended duration growth of gallium containing single crystals
12/02/2003US6656272 Method of epitaxially growing submicron group III nitride layers utilizing HVPE
12/02/2003US6656269 Method of manufacturing nitride system III-V compound layer and method of manufacturing substrate
11/2003
11/28/2003CA2428952A1 Method of making photonic crystal
11/27/2003WO2003098757A1 Light emitting element structure having nitride bulk single crystal layer
11/27/2003WO2003098708A1 Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
11/27/2003WO2003097532A1 Process for manufacturing a gallium rich gallium nitride film
11/27/2003WO2003038868A3 High resistivity silicon carbide single crystal and method of producing it
11/27/2003US20030219634 Aluminum, gallium or indium nitride undercoatings on surfaces of sapphire single crystal substrates, used in semiconductors having light emitting diodes or high speed integrated circuit chips
11/27/2003US20030217696 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
11/27/2003CA2486178A1 Process for manufacturing a gallium rich gallium nitride film
11/26/2003EP1365047A1 Diamond film and method for producing the same
11/26/2003EP1118880B1 Method of organic film deposition
11/26/2003CN1129349C Zone heating system with feedback control
11/25/2003US6653658 Electrical and electronic structures having improved thermoconductivity, comprising doped layers on germanium, sapphire, silicon and/or carbide substrates; heat exchangers
11/25/2003US6653166 Semiconductor device and method of making same
11/25/2003US6652989 Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface
11/25/2003US6652924 Sequential chemical vapor deposition
11/25/2003US6652762 Method for fabricating nano-sized diamond whisker, and nano-sized diamond whisker fabricated thereby
11/25/2003US6652650 Modified susceptor for use in chemical vapor deposition process
11/20/2003WO2003096396A1 Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
11/20/2003WO2002064853A3 Thin films and methods of making them using trisilane
11/20/2003US20030215990 Methods for fabricating strained layers on semiconductor substrates
11/20/2003US20030215022 OFDM detection apparatus and method for networking devices
11/20/2003US20030213964 III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same
11/20/2003US20030213949 Epitaxial substrates and semiconductor devices
11/20/2003US20030213433 Incorporation of an impurity into a thin film
11/20/2003US20030213428 exhibiting increased matrix cracking strength and fracture toughness
11/19/2003EP1363322A2 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
11/18/2003US6649885 Whereby temperature of wafer can be accurately measured at all times, so that epitaxial growth processing and etching can be conducted on wafer kept at prescribed temperature
11/18/2003US6649496 Production method for semiconductor crystal
11/18/2003US6649494 Manufacturing method of compound semiconductor wafer
11/18/2003US6649493 Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer
11/18/2003US6649288 Nitride film
11/18/2003US6649287 Transistor, few or no cracks
11/18/2003US6648974 Device and method for handling substrates by means of a self-leveling vacuum system in epitaxial induction
11/18/2003US6648966 Wafer produced thereby, and associated methods and devices using the wafer
11/13/2003WO2003094240A1 High voltage switching devices and process for forming same
11/13/2003WO2003094218A2 Method of growing monocrystalline oxide having a semiconductor device thereon
11/13/2003WO2003094214A1 Substrate for growing gallium nitride, method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
11/13/2003WO2003093118A1 Chemical mix and delivery systems and methods thereof
11/13/2003WO2003068699A8 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
11/13/2003WO2003038873A3 Removing an amorphous oxide from a monocrystalline surface
11/13/2003WO2003007334A3 Semiconductor structures and devices for detecting chemical reactant
11/13/2003WO2002065516A3 Improved process for deposition of semiconductor films
11/13/2003US20030211712 Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects
11/13/2003US20030211710 Method of manufacturing III-V group compound semiconductor
11/13/2003US20030211647 Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region
11/13/2003US20030210901 Pyrometer calibrated wafer temperature estimator
11/13/2003US20030209326 Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
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