| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 02/12/2004 | US20040029365 Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
| 02/12/2004 | US20040029359 Methods for fabricating a substrate |
| 02/12/2004 | US20040028810 Chemical vapor deposition reactor and method for utilizing vapor vortex |
| 02/12/2004 | US20040026704 III-V compound semiconductor device with an AIxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer |
| 02/11/2004 | EP1388597A1 METHOD FOR MANUFACTURING ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ZNTE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, AND SEMICONDUCTOR DEVICE |
| 02/11/2004 | EP1190122B1 Method and apparatus for epitaxially growing a material on a substrate |
| 02/11/2004 | CN1138025C Process for controlling polarity of GaN |
| 02/11/2004 | CN1138024C Compound gas injection system and methods |
| 02/10/2004 | US6689210 Apparatus for growing thin films |
| 02/05/2004 | WO2004012243A2 Selective placement of dislocation arrays |
| 02/05/2004 | WO2004012227A2 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 02/05/2004 | WO2004011693A1 Atomic deposition layer methods |
| 02/05/2004 | US20040023471 Thermal production of nanowires |
| 02/05/2004 | US20040023468 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material |
| 02/05/2004 | US20040023432 Semiconductor polysilicon component and method of manufacture thereof |
| 02/05/2004 | US20040022943 Prongs that are grown, via chemical vapor deposition, from patches of catalytic material deposited on a surface of a tip of the tweezer. |
| 02/05/2004 | US20040021401 Method for producing crystal growth substrate and semiconductor light-emitting element |
| 02/05/2004 | US20040020436 CVD reactor with graphite-foam insulated, tubular susceptor |
| 02/04/2004 | EP1386981A1 A thin film-forming apparatus |
| 02/04/2004 | EP1386348A2 Semiconductor device and method of making same |
| 02/04/2004 | EP1386026A1 High resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage |
| 02/04/2004 | EP1386025A1 A method to produce germanium layers |
| 02/03/2004 | US6686281 Method for fabricating a semiconductor device and a substrate processing apparatus |
| 02/03/2004 | US6685774 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| 02/03/2004 | US6684759 Temperature regulator for a substrate in vapor deposition processes |
| 01/29/2004 | WO2004009492A2 Diamondoid-based components in nanoscale construction |
| 01/29/2004 | US20040018008 Heating configuration for use in thermal processing chambers |
| 01/29/2004 | US20040016508 Plasma etching apparatus and plasma etching method |
| 01/29/2004 | US20040016397 Diamondoid-based components in nanoscale construction |
| 01/29/2004 | US20040016396 Method for producing semiconductor crystal |
| 01/29/2004 | US20040016395 Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate |
| 01/29/2004 | US20040016394 Atomic layer deposition methods |
| 01/28/2004 | EP1385196A2 Method of producing a Group III nitride semiconductor crystal |
| 01/22/2004 | WO2004007815A1 Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method |
| 01/22/2004 | WO2004007794A2 Pulsed nucleation deposition of tungsten layers |
| 01/22/2004 | WO2003094218A3 Method of growing monocrystalline oxide having a semiconductor device thereon |
| 01/22/2004 | US20040013801 Method for depositing in particular crystalline layers, and device for carrying out the method |
| 01/22/2004 | US20040011291 Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes and nanotubes thus obtained |
| 01/22/2004 | US20040011281 Semiconductor manufacturing method |
| 01/21/2004 | EP1382723A2 Method of organic film deposition |
| 01/21/2004 | EP1381718A2 Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques |
| 01/21/2004 | CN1469433A Method for producing Si Ge film on silicon substrate |
| 01/21/2004 | CN1468974A Prepn of III-family nitride material |
| 01/21/2004 | CN1135905C Furnace sidewall temperature control system |
| 01/20/2004 | US6679946 Method and apparatus for controlling substrate temperature and layer thickness during film formation |
| 01/15/2004 | WO2004006312A1 Group iii nitride semiconductor substrate and its manufacturing method |
| 01/15/2004 | WO2004005216A1 Substrate for forming thin film, thin film substrate, optical wave guide, luminescent element and substrate for carrying luminescent element |
| 01/15/2004 | WO2004004927A2 Nanostructures and methods for manufacturing the same |
| 01/15/2004 | WO2003079415A3 Methods for fabricating strained layers on semiconductor substrates |
| 01/15/2004 | WO2003062507A3 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material |
| 01/15/2004 | US20040009626 Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates |
| 01/15/2004 | US20040009617 Plasma etching apparatus and plasma etching method |
| 01/15/2004 | US20040009308 Method of producing a branched carbon nanotube for use with an atomic force microscope |
| 01/15/2004 | US20040007763 Method and resulting structure for manufacturing semiconductor substrates |
| 01/15/2004 | US20040007187 CVD reactor with substrate holder which is rotatably driven and mounted by a gas stream |
| 01/15/2004 | US20040007185 Method of manufacturing a semiconductor device and a semiconductor manufacture system |
| 01/15/2004 | US20040007171 Method for growing thin oxide films |
| 01/15/2004 | US20040007170 Method of fabricating a CMOS device with integrated super-steep retrograde twin wells using double selective epitaxial growth |
| 01/15/2004 | CA2741397A1 Nanostructures and methods for manufacturing the same |
| 01/14/2004 | EP1380050A2 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring |
| 01/14/2004 | CN1467863A Semiconductor chip, semiconductor device and method for manufacturing same |
| 01/14/2004 | CN1467311A Method of manufacturing inorganic nanotube |
| 01/13/2004 | US6676764 Method for cleaning a substrate in selective epitaxial growth process |
| 01/13/2004 | US6676758 Gas collector for epitaxial reactor |
| 01/13/2004 | US6676752 Forming metal nitrides |
| 01/13/2004 | US6676751 Epitaxial film produced by sequential hydride vapor phase epitaxy |
| 01/13/2004 | US6675987 Chemical delivery systems and methods of delivery |
| 01/08/2004 | WO2004003266A1 POROUS SUBSTRATE AND ITS MANUFACTURING METHOD, AND GaN SEMICONDUCTOR MULTILAYER SUBSTRATE AND ITS MANUFACTURING METHOD |
| 01/08/2004 | WO2004003252A1 Multi-component substances and processes for preparation thereof |
| 01/08/2004 | US20040005907 Method and apparatus for transmit power adjustment in radio frequency systems |
| 01/08/2004 | US20040005731 Device and method for the depostion of, in particular, crystalline layers on, in particular, crystalline substrates |
| 01/08/2004 | US20040005269 Chemical vapor deposition, in a thermal environment, using a carbon source and a catalyst mixture of Fe, Co or Ni and a supporting element, especially a lanthanide, which lowers catalyst melting point by forming alloys |
| 01/08/2004 | US20040003780 Self aligning non contact shadow ring process kit |
| 01/08/2004 | US20040003779 Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates |
| 01/07/2004 | EP1377697A1 Suppression of n-type autodoping in low-temperature si and sige epitaxy |
| 01/07/2004 | CN1133760C Graphite boat with mother liquid remover for light-phase epitaxial growth of Te-Cd-Hg film |
| 01/06/2004 | US6673701 Atomic layer deposition methods |
| 01/06/2004 | US6673646 Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
| 01/06/2004 | US6673478 Crystal-growth substrate and a ZnO-containing compound semiconductor device |
| 01/06/2004 | US6673392 Method of vertically aligning carbon nanotubes on substrates at low pressure using thermal chemical vapor deposition with DC bias |
| 01/06/2004 | US6673149 Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate |
| 01/02/2004 | EP1376665A1 Gaseous phase growing device |
| 01/02/2004 | EP1375691A1 Aluminum alloy sheet excellent in formability and hardenability during baking of coating and method for production thereof |
| 01/02/2004 | EP1375431A2 Method of manufacturing inorganic nanotube |
| 01/02/2004 | EP1375414A2 Chemical delivery systems and methods of delivery |
| 01/02/2004 | EP1374291A2 Deposition method over mixed substrates using trisilane |
| 01/02/2004 | EP1374290A2 Improved process for deposition of semiconductor films |
| 01/02/2004 | EP1374282A1 Hybrid deposition system & methods |
| 01/02/2004 | EP1373130A1 Process and apparatus for the production of carbon nanotubes |
| 12/31/2003 | CN1465094A Reactor having a movable shutter |
| 12/31/2003 | CN1465093A Method of producing semiconductor thin film, method of producing semiconductor device, semiconductor device, integrated circuit, electrooptical device and electronic apparatus |
| 12/30/2003 | US6669990 From a group IV metal complex having an N-alkoxy-b-ketoiminate tridentate ligand with a charge of -2; e.g., titanium bis (4-(2-methylethoxy) imino-2-pentanoate) |
| 12/25/2003 | WO2003106743A1 N-type semiconductor diamond producing method and semiconductor diamond |
| 12/25/2003 | US20030234400 Semiconductor device, semiconductor layer and production method thereof |
| 12/25/2003 | US20030233976 Process for direct deposition of ALD RhO2 |
| 12/25/2003 | US20030233768 Method and device for the temperature control of surface temperatures of substrates in a CVD reactor |
| 12/24/2003 | WO2003107404A1 Vapor phase epitaxial apparatus and vapor phase epitaxial method |
| 12/24/2003 | WO2003107403A1 Vapor phase epitaxy device |
| 12/24/2003 | WO2002018670A3 Cvd reactor with a gas outlet ring made of solid graphite |
| 12/24/2003 | CA2493318A1 N-type semiconductor diamond producing method and semiconductor diamond |